Standard Recovery Diodes (Stud Version), 400 A

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Standard Recovery Diodes (Stud Version), 400 A DO-205AB (DO-9) FEATURES Wide current range High surge current capabilities Stud cathode and stud anode version Standard JEDEC types Designed and qualified for industrial level Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY I F(AV) Package Circuit configuration 400 A DO-205AB (DO-9) Single diode TYPICAL APPLICATIONS Converters Power supplies Machine tool controls High power drives MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS I F(AV) 400 A T C 120 C I F(RMS) 630 A I FSM A 50 Hz 8250 60 Hz 8640 I 2 t 50 Hz 340 60 Hz 311 V RRM Range 800 to 1600 V T J -40 to C ka 2 s ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-400U(R) VOLTAGE CODE V RRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V V RSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 80 800 900 120 1 1300 160 1600 1700 I RRM MAXIMUM AT T J = T J MAXIMUM ma 15 Revision: 25-Nov-13 1 Document Number: 93510

FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current 400 A I at case temperature F(AV) conduction, half sine wave 120 C Maximum RMS forward current I F(RMS) DC at 110 C case temperature 630 A t = 10 ms No voltage 8250 Maximum peak, one cycle forward, 8640 I non-repetitive surge current FSM t = 10 ms % V RRM 6940 A Sinusoidal half wave, 7270 t = 10 ms No voltage initial T J = T J maximum 340 311 Maximum I 2 t for fusing I 2 t ka 2 s t = 10 ms % V RRM 241 220 Maximum I 2 t for fusing I 2 t t = 0.1 to 10 ms, no voltage reapplied 3400 ka 2 s Low level value of threshold voltage V F(TO)1 (16.7 % x x I F(AV) < I < x I F(AV) ), T J = T J maximum 0.77 High level value of threshold voltage V F(TO)2 (I > x I F(AV) ), T J = T J maximum 0.85 V Low level value of forward slope resistance r f1 (16.7 % x x I F(AV) < I < x I F(AV) ), T J = T J maximum 0.49 High level value of forward slope resistance r f2 (I > x I F(AV) ), T J = T J maximum 0.49 m Maximum forward voltage drop V FM I pk = 1500 A, T J = T J maximum, t p = 10 ms sinusoidal wave 1.62 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction operating and storage temperature range T J, T Stg -40 to C Maximum thermal resistance, junction to case R thjc DC operation 0.15 Maximum thermal resistance, case to heatsink R thcs Mounting surface, smooth, flat and greased 0.04 K/W Maximum allowed mounting torque ± 10 % Not lubricated threads 27 N m Approximate weight 250 g Case style See dimensions - link at the end of datasheet DO-205AB (DO-9) R thjc CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS 0.020 0.013 0.023 0.023 0.029 0.031 60 0.042 0.044 30 0.073 0.074 T J = T J maximum Note The table above shows the increment of thermal resistance R thjc when devices operate at different conduction angles than DC K/W Revision: 25-Nov-13 2 Document Number: 93510

Maximum Allowable Case Temperature ( C) 190 180 170 160 150 140 130 120 110 90 80 30 60 Conduction Angle 0 50 150 250 300 350 400 450 Maximum Allowable Case Temperature ( C) 190 180 170 160 150 Conduction Period 140 DC 130 120 30 60 110 0 300 400 500 Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Maximum Average Forward Power Loss (W) 550 500 450 400 350 300 250 150 60 30 RMS Limit Conduction Angle 0.3 K/W 0.4 K/W 0.2 K/W 0.6 K/W 1 K/W 1.8 K/W 50 0 50 150 250 300 350 400 450 10 30 50 70 90 110 130 150 170 190 0.1 K/W Fig. 3 - Forward Power Loss Characteristics RthSA = 0.04 K/W - Delta R Maximum Allowable Ambient Temperature ( C) Maximum Average Forward Power Loss (W) 800 700 600 500 400 300 DC 60 30 RMS Limit Conduction Period 0.2 K/W 0.3 K/W 0.4 K/W 0.6 K/W 1 K/W 0.1 K/W 1.8 K/W RthSA = 0.04 K/W - Delta R 0 50 150 250 350 450 550 650 10 30 50 70 90 110 130 150 170 190 Fig. 4 - Forward Power Loss Characteristics Maximum Allowable Ambient Temperature ( C) Revision: 25-Nov-13 3 Document Number: 93510

Peak Half Sine Wave Forward Current (A) 8000 7000 6000 5000 4000 3000 At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = 1C @ 60 Hz 0.0083 s @ 50 Hz 0.0 s 0 1 10 Number Of Equal Amplitude Half Cycle Current Pulses (N) Peak Half Sine Wave Forward Current (A) 9000 8000 7000 6000 5000 4000 3000 0 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial Tj = 1C No Voltage Reapplied Rated Vrrm Reapplied 0 0.01 0.1 1 Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 00 Instantaneous Forward Current (A) 0 Tj = 25 C Tj = 1C 0.5 1 1.5 2 2.5 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics Transient Thermal Impedance Z thjc (K/W) 1 0.1 0.01 Steady State Value: RthJC = 0.15 K/W (DC Operation) 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance Z thjc Characteristic Revision: 25-Nov-13 4 Document Number: 93510

ORDERING INFORMATION TABLE Device code VS- 40 0 U R 160 D 1 2 3 4 5 6 7 1 - product 2-40 = Essential part number 3-0 = Standard recovery device 4 - U = Stud normal polarity (cathode to stud) 5 - None = Stud normal polarity (cathode to stud) R = Stud reverse polarity (anode to stud) 6 - Voltage code x 10 = V RRM (see Voltage Ratings table) 7 - Diffused diode Note: For metric device M16 x 1.5 contact factory Dimensions LINKS TO RELATED DOCUMENTS www.vishay.com/doc?95339 Revision: 25-Nov-13 5 Document Number: 93510

DO-205AB (DO-9) for 400U(R) Series Outline Dimensions DIMENSIONS in millimeters (inches) Glass-metal seal 19 (0.75) 4 (0.16) 9.5 (0.37) MIN. 39 (1.53) Ø 8.5 (0.33) NOM. C.S. 35 mm² (0.054 s.i.) ± 10 (7.87 ± 0.39) Ø 28.5 (1.08) 75 (2.95) MIN. SW 32 16 (0.63) 21 (0.82) 3/4"-16UNF-2A (1) Note For metric device: M16 x 1.5 contact factory Document Number: 95339 For technical questions, contact: indmodules@vishay.com www.vishay.com Revision: 24-Jul-08 1

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