SPS445CP/CW POWER SCHOY RECIFIERS MAIN PRODUCS CHARACERISICS IF(av) VRRM 2 x 2 A 45 V j (max) 175 C V F (max).63 V FEAURES AND BENEFIS VERY SMALL CONDUCION LOSSES NEGLIGIBLE SWICHING LOSSES EXREMELY FAS SWICHING LOW HERMAL RESISANCE DESCRIPION Dual center tap Schottky rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged either in SO-93 or O-247 this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. SO-93 SPS445CP O-247 SPS445CW ABSOLUE RAINGS (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 45 V IF(RMS) RMS forward current 3 A IF(AV) Average forward current c = 15 C Per diode 2 A δ =.5 Per device 4 IFSM Surge non repetitive forward current tp = ms sinusoidal 22 A IRRM Repetitive Peak reverse current tp = 2 µs square 1 A F = 1kHz I RSM Non repetitive peak reverse current tp = µs square 3 A stg Storage temperature range - 65 to + 175 C j Maximum operating junction temperature * 175 C dv/dt Critical rate of rise of reverse voltage V/µs *: dptot < dj 1 Rth(j a) thermal runaway condition for a diode on its own heatsink June 1999 - Ed: 3B 1/5
HERMAL RESISANCES Symbol Parameter Value Unit Rth (j-c) Junction to case Per diode 1.5 C/W total.8 Rth(c) Coupling.1 When the diodes 1 and 2 are used simultaneously : J(diode 1) = P(diode1) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c) SAIC ELECRICAL CHARACERISICS (per diode) Symbol Parameter ests Conditions Min. yp. Max. Unit IR * Reverse leakage j = 25 C VR = VRRM 2 µa current j = 125 C 11 4 ma VF * Forward voltage drop j = 125 C IF = 2 A.56.63 V j = 25 C IF=4A.94 j = 125 C IF= 4 A.7.83 Pulse test : * tp = 38 µs, δ <2% o evaluate the conduction losses use the following equation : P =.46 x IF(AV) +.85 IF 2 (RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). Fig. 2: Average current versus ambient temperature (per diode). 18 16 14 12 8 6 4 PF(av)(W) δ =.1 δ =.5 δ =.2 δ=.5 δ =1 2 IF(av) (A) δ=tp/ tp 2 4 6 8 12 14 16 18 2 22 24 26 IF(av)(A) 22 Rth(j-a)=Rth(j-c) 2 18 16 14 Rth(j-a)=15 C/W 12 8 6 4 2 δ=tp/ tp amb( C) 25 5 75 125 15 175 2/5
Fig. 3: Nonrepetitivesurgepeakforwardcurrentversus overloadduration(maximum values)(per diode). Fig. 4: Relative variation of thermal transient impedancejunction to case versus pulse duration. IM(A) 2 18 16 14 12 c=75 C c= C 8 c=125 C 6 IM 4 t 2 δ=.5 t(s) 1E-3 1E-2 1E-1 1E+ 1..8.6.4.2 Zth(j-c)/Rth(j-c) δ =.5 δ =.2 δ =.1 Single pulse tp(s) δ=tp/ tp. 1E-4 1E-3 1E-2 1E-1 1E+ Fig. 5: Reverse leakage current versus reverse voltage applied (typical values) (per diode). Fig. 6: Junction capacitance versus reverse voltage applied (typical values) (per diode). IR(µA) 5E+4 1E+4 1E+3 1E+2 j=15 C j= C j=75 C j=5 C 5. 1. C(nF) 1E+1 j=25 C VR(V) 1E+ 5 15 2 25 3 35 4 45 VR(V).1 1 2 5 2 5 Fig. 7: Forward voltage drop versus forward current (maximum values) (per diode). 2 IFM(A) ypical values j=25 C VFM(V) 1..2.4.6.8 1. 1.2 1.4 1.6 1.8 2. 3/5
PACAGE MECHANICAL DAA SO-93 DIMENSIONS REF. Millimeters Inches Min. yp. Max. Min. yp. Max. A 4.7 4.9 1.185.193 C 1.9 2..75.83 D 2.5.98 D1 2..78 E.5.78.2.31 F 1. 1.3.43.51 F3 1.75.69 F4 2..83 G.8 11..425.437 H 14.7 15.2.279.598 L 12.2.48 L2 16.2.638 L3 18..79 L5 3.95 4.15.156.163 L6 31. 1.22 O 4. 4..157.161 4/5
PACAGE MECHANICAL DAA O-247 DIMENSIONS L L5 V V F1 V2 F(x3) H G = = F2 F3 F4 Dia. L2 L4 L1 L3 M D A E REF. Millimeters Inches Min. yp. Max. Min. yp. Max. A 4.85 5.15.191.23 D 2.2 2.6.86.2 E.4.8.15.31 F 1. 1.4.39.55 F1 3..118 F2 2..78 F3 2. 2.4.78.94 F4 3. 3.4.118.133 G.9.429 H 15.45 15.75.68.62 L 19.85 2.15.781.793 L1 3.7 4.3.145.169 L2 18.5.728 L3 14.2 14.8.559.582 L4 34.6 1.362 L5 5.5.216 M 2. 3..78.118 V 5 5 V2 6 6 Dia. 3.55 3.65.139.143 ype Marking Package Weight Base qty Delivery mode SPS445CP SPS445CP SO-93 3.97 g. 3 ube SPS445CW SPS445CW O-247 4.46 g. 3 ube Cooling method: by conduction (C) Recommended torque value:.8 N.m Maximum torque value: 1. N.m. Epoxy meets UL94,V Information furnished is believed to be accurate and reliable. However, SMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or otherrights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SMicroelectronics. Specifications mentioned in this publication are subject to change without notice. his publication supersedes and replaces all information previously supplied. SMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SMicroelectronics. he S logo is a registered trademark of SMicroelectronics 1999 SMicroelectronics - Printed in Italy - All rights reserved. SMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong ong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United ingdom - U.S.A. http://www.st.com 5/5