VS-65PQ5PbF, VS-65PQ5-N3 High Performance Schottky Rectifier, 65 Base cathode 3 3 TO-47 node node PRODUT SUMMRY Package TO-47 I F(V) 65 V R 5 V V F at I F.46 V I RM max. 87 m at T J max. 5 Diode variation Single die E S 9 mj FETURES 5 T J operation (V R < 5 V) Single diode configuration Optimized for OR-ing applications Ultralow forward voltage drop Guard ring for enhanced ruggedness and long term reliability High purity, high temperature epoxy vailable encapsulation for enhanced mechanical strength and moisture resistance Designed and qualified according to JEDE-JESD47 Material categorization: For definitions of compliance please see www.vishay.com/doc?999 DESRIPTION The VS-65PQ5... Schottky rectifier module has been optimized for ultralow forward voltage drop specifically for the OR-ing of parallel power supplies. The proprietary barrier technology allows for reliable operation up to 5 junction temperature. Typical applications are in parallel switching power supplies, converters, reverse battery protection, and redundant power subsystems. MJOR RTINGS ND HRTERISTIS SYMBOL HRTERISTIS VLUES UNITS I F(V) Rectangular waveform 65 V RRM 5 V I FSM t p = 5 μs sine 5 V F 65 pk, T J = 5.46 V T J Range - 55 to 5 VOLTGE RTINGS PRMETER SYMBOL TEST ONDITIONS VS-65PQ5PbF VS-65PQ5-N3 UNITS T J = 5 5 Maximum D reverse voltage V R T J = 5 5 5 V BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST ONDITIONS VLUES UNITS Maximum average forward current I F(V) 5 % duty cycle at T = 83, rectangular waveform 65 Maximum peak one cycle 5 µs sine or 3 µs rect. pulse Following any rated load 5 I FSM condition and with rated non-repetitive surge current ms sine or 6 ms rect. pulse V RRM applied 4 Non-repetitive avalanche energy E S T J = 5, I S =, L = 4.5 mh 9 mj urrent decaying linearly to zero in μs Repetitive avalanche current I R Frequency limited by T J maximum V =.5 x V R typical Revision: 7-Jul-3 Document Number: 9446 RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?9
VS-65PQ5PbF, VS-65PQ5-N3 ELETRIL SPEIFITIONS PRMETER SYMBOL TEST ONDITIONS VLUES UNITS Forward voltage drop V () FM 65.5 T J = 5 3.7 65.46 T J = 5 3.76 V T J = 5 V R = 5 V. Reverse leakage current I () RM T J = 5 8 V R = Rated V R T J = 87 m Threshold voltage V F(TO).37 mv T J = T J maximum Forward slope resistance r t 4.9 m Maximum junction capacitance T V R = 5 V D (test signal range khz to MHz) 5 43 pf Typical series inductance L S Measured lead to lead 5 mm from package body 8 nh Maximum voltage rate of change dv/dt Rated V R V/µs Note () Pulse width < 3 μs, duty cycle < % THERML - MEHNIL SPEIFITIONS PRMETER SYMBOL TEST ONDITIONS VLUES UNITS Maximum junction temperature range T J - 55 to 5 Maximum storage temperature range T Stg - 55 to 5 Maximum thermal resistance, junction to case R thj D operation.8 Typical thermal resistance, case to heatsink R ths Mounting surface, smooth and greased.3 /W pproximate weight 6 g. oz. minimum 6 (5) kgf cm Mounting torque Non-lubricated threads maximum () (lbf in) Marking device ase style TO-47 (JEDE) 65PQ5 Revision: 7-Jul-3 Document Number: 9446 RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?9
VS-65PQ5PbF, VS-65PQ5-N3 T J = I F - Instantaneous Forward urrent () T J = 5 J T J = T J = 5 I R - Reverse urrent (m) T J = 75 T J = 5 T J = 5.5..5. 4 6 8 4 6 V FM - Forward Voltage Drop (V) V R - Reverse Voltage (V) Fig. - Maximum Forward Voltage Drop haracteristics Fig. - Typical Values of Reverse urrent vs. Reverse Voltage T - Junction apacitance (pf) T J = 5 4 6 8 4 6 V R - Reverse Voltage (V) Fig. 3 - Typical Junction apacitance vs. Reverse Voltage Z thj - Thermal Impedance ( /W). Single pulse (thermal resistance) D =.75 D =.5 D =.33 D =.5 D =....... t - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance Z thj haracteristics P DM Notes:. Duty factor D = t /t. Peak T J = P DM x Z thj + T t t Revision: 7-Jul-3 3 Document Number: 9446 RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?9
VS-65PQ5PbF, VS-65PQ5-N3 llowable ase Temperature ( ) 5 9 6 3 Square wave (D =.5) 5 V applied See note () D 4 6 8 verage Power Loss (W) 8 6 4 D =. D =.5 D =.33 D =.5 D =.75 D RMS limit 4 6 8 I F(V) - verage Forward urrent () I F(V) - verage Forward urrent () Fig. 5 - Maximum llowable ase Temperature vs. verage Forward urrent Fig. 6 - Forward Power Loss haracteristics I FSM - Non-Repetitive Surge urrent () t any rated load condition and with rated V RRM applied following surge t p - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge urrent L D.U.T. IRFP46 High-speed switch urrent monitor R g = 5 Ω Freewheel diode 4HFL4S + V d = 5 V Fig. 8 - Unclamped Inductive Test ircuit Note () Formula used: T = T J - (Pd + Pd REV ) x R thj ; Pd = Forward power loss = I F(V) x V FM at (I F(V) /D) (see fig. 6); Pd REV = Inverse power loss = V R x I R ( - D); I R at V R = 5 V Revision: 7-Jul-3 4 Document Number: 9446 RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?9
VS-65PQ5PbF, VS-65PQ5-N3 ORDERING INFORMTION TBLE Device code VS- 65 P Q 5 PbF 3 4 5 6 3 4 5 6 - product - urrent rating (65 = 65 ) - Package: P = TO-47 - Schottky Q series - Voltage code (5 = 5 V) - Environmental digit PbF = Lead (Pb)-free and RoHS compliant -N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER T/R MINIMUM ORDER QUNTITY PKGING DESRIPTION VS-65PQ5PbF 5 5 ntistatic plastic tube VS-65PQ5-N3 5 5 ntistatic plastic tube Dimensions Part marking information SPIE model LINKS TO RELTED DOUMENTS TO-47 modified PbF TO-47 modified -N3 www.vishay.com/doc?9554 www.vishay.com/doc?956 www.vishay.com/doc?957 www.vishay.com/doc?9536 Revision: 7-Jul-3 5 Document Number: 9446 RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?9
TO-47-5 mils L/F Outline Dimensions DIMENSIONS in millimeters and inches B () R/ Q (3) E S Ø K M D B M (6) Φ P (Datum B) D Φ P x R () D D (4) 3 D Thermal pad 4 (5) L L See view B (4) E. M D B M x b 3 x b. M M b4 x e View - Plating (b, b3, b5) Base metal DDE E (c) c (b, b, b4) (4) Section -, D - D, E - E View B SYMBOL MILLIMETERS INHES MILLIMETERS INHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES 4.65 5.3.83.9 D.5.35..53..59.87. E 5.9 5.87.6.65 3.7.37.46.54 E 3.46 -.53 - b.99.4.39.55 e 5.46 BS.5 BS b.99.35.39.53 Ø K.54. b.65.39.65.94 L 4. 6..559.634 b3.65.34.65.9 L 3.7 4.9.46.69 b4.59 3.43..35 Ø P 3.56 3.66.4.44 b5.59 3.38..33 Ø P - 7.39 -.9 c.38.89.5.35 Q 5.3 5.69.9.4 c.38.84.5.33 R 4.5 5.49.78.6 D 9.7.7.776.85 3 S 5.5 BS.7 BS D 3.8 -.55-4 Notes () Dimensioning and tolerancing per SME Y4.5M-994 () ontour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed.7 mm (.5") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D and E (5) Lead finish uncontrolled in L (6) Ø P to have a maximum draft angle of.5 to the top of the part with a maximum hole diameter of 3.9 mm (.54") (7) Outline conforms to JEDE outline TO-47 with exception of dimension c and Q Revision: -pr-7 Document Number: 9554 RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?9
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