QM30HA-H MEDIUM POWER SWITCHING USE

Similar documents
QM300HA-2H HIGH POWER SWITCHING USE

QM50HA-H MEDIUM POWER SWITCHING USE

QM75DY-H HIGH POWER SWITCHING USE

QM200HA-2H HIGH POWER SWITCHING USE

QM100HY-H HIGH POWER SWITCHING USE

QM150HY-H HIGH POWER SWITCHING USE

QM150DY-2HK HIGH POWER SWITCHING USE

QM100DY-2HBK HIGH POWER SWITCHING USE

QM300DY-2H HIGH POWER SWITCHING USE

QM15HA-H MEDIUM POWER SWITCHING USE

QM400HA-H HIGH POWER SWITCHING USE

CM150TL-12NF. APPLICATION AC drive inverters & Servo controls, etc CM150TL-12NF. IC...150A VCES...600V Insulated Type 6-elements in a pack

APPLICATION DC motor control, NC equipment, Inverters, Servo drives, contactless switches, electric furnace temperature control, light dimmers. 2 φ5.

CM400HG-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

PM200CVA060 PM200CVA060. APPLICATION General purpose inverter, servo drives and other motor controls LABEL PM200CVA060

not Recommend for New Design TM130DZ/CZ/PZ-M,-H HIGH POWER GENERAL USE

PM100RL1B060 FLAT-BASE TYPE INSULATED PACKAGE

PM50RLB060. APPLICATION General purpose inverter, servo drives and other motor controls PM50RLB060 MITSUBISHI <INTELLIGENT POWER MODULES>

PM50RSE060 PM50RSE060. APPLICATION General purpose inverter, servo drives and other motor controls PM50RSE060 LABEL

PM25RL1B120 FLAT-BASE TYPE INSULATED PACKAGE

CM200DY-24A. APPLICATION AC drive inverters & Servo controls, etc CM200DY-24A. IC...200A VCES V Insulated Type 2-elements in a pack

PM75CSD120 PM75CSD120. APPLICATION General purpose inverter, servo drives and other motor controls LABEL PM75CSD120

PM75RSD060 PM75RSD060. APPLICATION General purpose inverter, servo drives and other motor controls LABEL PM75RSD060

BCR5KM. APPLICATION Control of heater such as electric rice cooker, electric pot. BCR5KM OUTLINE DRAWING Dimensions in mm

C N V (4TYP) U (5TYP) QIF (Common Collector)

BCR16A, BCR16B, BCR16C, BCR16E

FM600TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE

PM25CLA120. APPLICATION General purpose inverter, servo drives and other motor controls PM25CLA120 MITSUBISHI <INTELLIGENT POWER MODULES>

IT (AV) A VDRM...400V/600V JEDEC : TO-92. Conditions A IT (AV) Commercial frequency, sine half wave, 180 conduction, Ta=47 C A ITSM

IT (AV) A VDRM V JEDEC : TO-92. Conditions A IT (AV) Commercial frequency, sine half wave, 180 conduction, Ta=30 C A ITSM

PM150RLB060. APPLICATION General purpose inverter, servo drives and other motor controls PM150RLB060.

Unit IT (RMS) ITSM. Conditions. Commercial frequency, sine full wave 360 conduction, Tc=98 C 60Hz sinewave 1 full cycle, peak value, non-repetitive

Conditions Commercial frequency, sine full wave 360 conduction, Tc=56 C 4 60Hz sinewave 1 full cycle, peak value, non-repetitive

PS12034 PS MITSUBISHI SEMICONDUCTOR <Application Specific Specific Intelligent Power Power Module> FLAT-BASE TYPE TYPE INSULATED TYPE TYPE

NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)

PM50CSE120 FLAT-BASE TYPE TYPE INSULATED PACKAGE

CP15TD1-24A. DIP-CIB 3Ø Converter + 3Ø Inverter + Brake 15 Amperes/1200 Volts

New Designs. Not Recommended for. General purpose transistor (isolated transistor and diode) QSL11 QSL11. Transistors. Rev.A 1/4

PM50CLA120. APPLICATION General purpose inverter, servo drives and other motor controls PM50CLA120 FEATURE MITSUBISHI <INTELLIGENT POWER MODULES>

MG200Q2YS60A(1200V/200A 2in1)

Conditions Commercial frequency, sine full wave 360 conduction, Tc=103 C 3. Unit A ITSM. 60Hz sinewave 1 full cycle, peak value, non-repetitive

BC856-HF Thru. BC858-HF Series (PNP) RoHS Device Halogen Free

STR-S6707 THRU STR-S6709

TOSHIBA IGBT Module Silicon N Channel IGBT MG400Q2YS60A

CP10TD1-24A. DIP-CIB 3Ø Converter + 3Ø Inverter + Brake 10 Amperes/1200 Volts

Item Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous. A Collector current

MJD340 (NPN) MJD350 (PNP) High Voltage Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS, 15 WATTS

SPECIFICATION. Preliminary MT5F Fuji Electric Systems Co.,Ltd. : Mar This specification's contents may change without previous notice.

PM75CL1A120 FLAT-BASE TYPE INSULATED PACKAGE

Rating 600 ± to to Unit V V A A A W W C C N m. Symbol Characteristics Conditions Unit Min. Typ. Max.

PM150RSE120 FLAT-BASE TYPE TYPE INSULATED PACKAGE

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current A. Continuous Tc=25 C 35. Tc=80 C 30.

APPLICATION AC100V~200V three-phase inverter drive for small power motor control. (2.2) 21.4 ±0.5 (10) (11) (10) (4.65) (2.9) 34.9 ± ±0.5 (1.

STR-S5707 AND STR-S5708

MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power Transistors DPAK For Surface Mount Applications

MMBT2222A SMALL SIGNAL NPN TRANSISTOR

PM50RSE120 FLAT-BASE TYPE TYPE INSULATED PACKAGE

Obsolete Product(s) - Obsolete Product(s)

Continental Device India Limited

TIP3055 (NPN), TIP2955 (PNP) Complementary Silicon Power Transistors 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 90 WATTS

Item Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous. A Collector current

COLLECTOR BASE EMITTER BC 557 BC556. mw mw/ C PD PD Characteristic Symbol Min Typ Max Unit V(BR)CEO BC557 BC558 V(BR)CBO BC557 BC558

Conditions. Unit IT (RMS) ITSM. Commercial frequency, sine full wave 360 conduction, Tc=86 C 60Hz sinewave 1 full cycle, peak value, non-repetitive

UNISONIC TECHNOLOGIES CO., LTD 2SC5305

Item Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous Tc=25 C 75. A Collector current.

XI'AN IR-PERI Company

UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN SILICON TRANSISTOR

Continental Device India Limited

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current. Tc=80 C 35. 1ms IC -IC pulse.

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current A. Continuous Tc=25 C 35. Tc=75 C 30.

NJD2873T4G NJVNJD2873T4G. Power Transistors. NPN Silicon DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 15 WATTS

M81711FP MITSUBISHI SEMICONDUCTORS <LVIC> GENERAL PURPOSE DRIVER

ESM3030DV NPN DARLINGTON POWER MODULE

General Purpose Transistors

High Power Rugged Type IGBT Module

TYP K "T" (4 TYP) TYP TYP UP UFO V VPI GND GND GND GND IN V CC OUT S I

L M DETAIL "A" SIGNAL TERMINAL 3 E(L) 4 V D 5 G(H) 6 F O (H) 7 E(H) 8 OPEN

L M DETAIL "A" SIGNAL TERMINAL 3 E(L) 4 V D 5 G(H) 6 F O (H) 7 E(H) 8 OPEN

Obsolete Product(s) - Obsolete Product(s)

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current. Tc=80 C IC. Tc=80 C.

QID Dual IGBT HVIGBT Module 85 Amperes/6500 Volts

2SC3657 2SC3657. Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Converter Applications. Maximum Ratings (Tc = 25 C)

T C =25 75 T C = Symbol Parameter/Test Conditions Values Unit

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. Not recommend for new design. Continuous Tc=25 C

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. 1ms. 1 device. Continuous 1ms. 1 device

DUAL SURFACE MOUNT NPN/PNP TRANSISTORS (COMPLIMENTARY) Rating Symbol Value Units Collector-Base Voltage. 50 V Collector-Emitter Voltage

NPN General Purpose Transistor

V (4TYP) U (5TYP) V 0.28 Dia. 7.0 Dia.

unit:mm 2009B Tc=25 C V V

Description of Terminal Symbols and Terminology

0.3W, PNP Plastic-Encapsulate Transistor

I CM Repetitive Peak Collector Current tp=1ms. 150 P tot T J = I 2 t. A 2 J =125, t=10ms, V R =0V

Emergency lighting LED Voltage regulation SOT-89. Description. Order code Marking Package Packaging. 2STF SOT-89 Tape and reel

Obsolete Product(s) - Obsolete Product(s)

NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)

Replaces March 2002, version DS DS July 2002

Excellent Integrated System Limited

BUH515 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)).

2SD1508 2SD1508. Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications. Maximum Ratings (Ta = 25 C)

Symbol Parameter/Test Conditions Values. 200 P tot Power Dissipation Per IGBT T C =25, T Jmax = Symbol Parameter/Test Conditions Values

Transcription:

QMH-H QMH-H IC Collector current... CEX Collector-emitter voltage... 6 hfe current gain... Insulated Type UL Recognized Yellow Card No. E6 (N) File No. E1 PPLICTION Inverters, C servo drives, UPS, motor controllers, NC equipment, Welders OUTLINE DRWING & CIRCUIT DIGRM Dimensions in mm.. B E 9 1 6.. 9 φ. C R6 C M.. B LBEL. E

QMH-H BSOLUTE MXIMUM RTINGS (Tj= C, unless otherwise noted) Symbol Parameter Conditions Ratings Unit CEX (SUS) Collector-emitter voltage IC=1, EB= 6 CEX Collector-emitter voltage EB= 6 CBO Collector-base voltage Emitter open 6 EBO Emitter-base voltage Collector open IC Collector current IC Collector reverse current (forward diode current) PC Collector dissipation TC= C W IB Base current 1. ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 6Hz (half wave) Tj Junction temperature ~+1 C Tstg Storage temperature ~+1 C iso Isolation voltage Charged part to case, C for 1 minute Mounting torque Main terminal screw M Mounting screw M.9~1. 1~1 1.~1.96 1~ N m kg cm N m kg cm Weight Typical value 9 g ELECTRICL CHRCTERISTICS (Tj= C, unless otherwise noted) Symbol Parameter Test conditions Min. Limits Typ. Max. Unit ICEX ICBO IEBO CE (sat) BE (sat) CEO hfe ton ts Rth (j-c) Q Rth (j-c) R Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage current gain Switching time Thermal resistance (junction to case) CE=6, EB= CB=6, Emitter open EB= IC=, IB=. IC= (diode forward voltage) IC=, CE=/ CC=, IC=, IB1= IB=.6 Transistor part Diode part /1 1. 1... 1. 1. 1... m m m Rth (c-f) Contact thermal resistance (case to fin) Conductive grease applied.1

QMH-H PERFORMNCE CURES COLLECTOR CURRENT IC () 1 6 COMMON EMITTER OUTPUT CHRCTERISTICS (TYPICL) Tj= C IB=. IB=1. IB=. IB=. IB=.1 1 1 CURRENT GIN S. COLLECTOR CURRENT (TYPICL) CE=. CE=. 1 Tj= C Tj=1 C 11 11 1 COLLECTOR-EMITTER OLTGE CE () COLLECTOR CURRENT IC () CURRENT GIN hfe BSE CURRENT IB () COMMON EMITTER INPUT CHRCTERISTIC (TYPICL) Tj= C CE=. 1. 1. 1...6. STURTION OLTGE CE (sat), BE (sat) () 11 STURTION OLTGE CHRCTERISTICS (TYPICL) IB=. Tj= C Tj=1 C BE(sat) CE(sat) 11 1 BSE-EMITTER OLTGE BE () COLLECTOR CURRENT IC () COLLECTOR-EMITTER STURTION OLTGE CE (sat) () COLLECTOR-EMITTER STURTION OLTGE (TYPICL) Tj= C Tj=1 C 1 IC=1 IC= IC= 1 SWITCHING TIME ton, ts, () 11 SWITCHING TIME S. COLLECTOR CURRENT (TYPICL) ts CC= IB1= IB=.6 ton Tj= C Tj=1 C 11 1 BSE CURRENT IB () COLLECTOR CURRENT IC ()

QMH-H SWITCHING TIME S. BSE CURRENT (TYPICL) REERSE BIS SFE OPERTING RE SWITCHING TIME ts, () 11 ts CC= IB1=.6 IC= Tj= C Tj=1 C 1 11 COLLECTOR CURRENT IC () 6 IB= 1 1 Tj=1 C 1 6 BSE REERSE CURRENT IB () COLLECTOR-EMITTER OLTGE CE () FORWRD BIS SFE OPERTING RE DERTING FCTOR OF F. B. S. O.. COLLECTOR CURRENT IC () 1 1ms 1 TC= C NON REPETITIE 1 1 1 9 6 1 COLLECTOR DISSIPTION SECOND BREKDOWN RE 6 1 16 COLLECTOR-EMITTER OLTGE CE () CSE TEMPERTURE TC ( C) DERTING FCTOR (%) Zth (j c) ( C/ W) TRNSIENT THERML IMPEDNCE CHRCTERISTIC (TRNSISTOR) 1.....1 1 1 1 1 COLLECTOR REERSE CURRENT IC () 1 REERSE COLLECTOR CURRENT S. COLLECTOR-EMITTER REERSE OLTGE (DIODE FORWRD CHRCTERISTICS) (TYPICL) Tj= C Tj=1 C.. 1. 1.6.. TIME (s) COLLECTOR-EMITTER REERSE OLTGE CEO ()

QMH-H SURGE COLLECTOR REERSE CURRENT ICSM () RTED SURGE COLLECTOR REERSE CURRENT (DIODE FORWRD SURGE CURRENT) 1 1 Irr (), Qrr (µc) REERSE RECOERY CHRCTERISTICS OF FREE-WHEEL DIODE (TYPICL) 1 Irr Tj= C Tj=1 C CC= IB1= IB=.6 1 Qrr trr 1 1 CONDUCTION TIME (CYCLES T 6Hz) FORWRD CURRENT IF () trr () TRNSIENT THERML IMPEDNCE CHRCTERISTIC (DIODE) 1 1. 1.6 Zth (j c) ( C/ W) 1... 1 1 1 1 TIME (s)