SEMICONDUCTOR TECHNICAL DATA Order this document by N69/D NPN Silicon COLLECTOR *Motorola Preferred Device BASE EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 5 Vdc Collector Emitter Voltage VCES 4 Vdc Collector Base Voltage VCBO 4 Vdc Emitter Base Voltage VEBO 4.5 Vdc Collector Current ( s pulse) IC(Peak) 5 ma Collector Current Continuous IC ma Total Device Dissipation @ TA = 5 C Derate above 5 C PD.6.6 Watt mw/ C CASE, STYLE TO 8 (TO 6AA) Total Device Dissipation @ TC = C Derate above C PD.68 6.85 Watts mw/ C Operating and Storage Junction Temperature Range TJ, Tstg 65 to + C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient R JA 486 C/W Thermal Resistance, Junction to Case R JC 47 C/W ELECTRICAL CHARACTERISTICS (TA = 5 C unless otherwise noted) OFF CHARACTERISTICS Characteristic Symbol Min Max Unit Collector Emitter Breakdown Voltage (IC = A, VBE = ) V(BR)CES 4 Vdc Collector Emitter Sustaining Voltage() (IC = madc, IB = ) VCEO(sus) 5 Vdc Collector Base Breakdown Voltage (IC = A, IB = ) V(BR)CBO 4 Vdc Emitter Base Breakdown Voltage (IE = Adc, IC = ) V(BR)EBO 4.5 Vdc Collector Cutoff Current (VCB = Vdc, IE = ) (VCB = Vdc, IE =, TA = 5 C) Collector Cutoff Current (VCE = Vdc, VBE = ) N69 ICBO.4 Adc ICES.4 Adc Base Current (VCE = Vdc, VBE = ). Pulse Test: Pulse Width s, Duty Cycle.%. IB.4 Adc Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 996
ELECTRICAL CHARACTERISTICS (TA = 5 C unless otherwise noted) (Continued) ON CHARACTERISTICS DC Current Gain() (IC = madc, VCE =. Vdc) Characteristic Symbol Min Max Unit N69 hfe 4 (IC = madc, VCE =. Vdc, TA = 55 C) N69 (IC = madc, VCE =.5 Vdc, TA = 55 C) (IC = madc, VCE =.4 Vdc) (IC = madc, VCE =. Vdc) (IC = madc, VCE =. Vdc) N69 Collector Emitter Saturation Voltage() (IC = madc, IB =. madc) N69 VCE(sat).5. Vdc (IC = madc, IB =. madc, TA = +5 C) (IC = madc, IB =. madc)..5 (IC = madc, IB = madc).5 Base Emitter Saturation Voltage() (IC = madc, IB =. madc) (IC = madc, IB =. madc, TA = +5 C) (IC = madc, IB =. madc, TA = 55 C) (IC = madc, IB =. madc) All Types VBE(sat).7.59.85..5 Vdc (IC = madc, IB = madc) SMALL SIGNAL CHARACTERISTICS Current Gain Bandwidth Product (IC = madc, VCE = Vdc, f = MHz) Output Capacitance (VCB = 5. Vdc, IE =, f =. MHz) Input Capacitance (VEB =. Vdc, IC =, f =. MHz) SWITCHING CHARACTERISTICS Storage Time (IC = IB = madc, IB = madc) Turn On Time (IC = madc, IB =. ma, IB =.5 ma, VCC =. Vdc) Turn Off Time (IC = madc, IB =. ma, IB =.5 ma, VCC =. Vdc). Pulse Test: Pulse Width s, Duty Cycle.%..6 ft 5 MHz Cobo 4. pf Cibo 4. pf ts ns ton ns toff 8 ns Motorola Small Signal Transistors, FETs and Diodes Device Data
SWITCHING TIME EQUIVALENT TEST CIRCUITS FOR N69, N7 +.6 V t V 7 Ω +.75 V t 7 Ω.5 V PULSE WIDTH (t) = ns. k Cs* < 4 pf 9.5 V PULSE WIDTH (t) = ns. k Cs* < 4 pf Figure. ton Circuit ma Figure. toff Circuit ma +.8 V V t PULSE WIDTH (t) = ns V 95 Ω k Cs* < pf +.4 V 8.6 V t PULSE WIDTH (t) BETWEEN AND 5 µs 95 Ω V k Cs* < pf N96 Figure. ton Circuit ma Figure 4. toff Circuit ma * Total shunt capacitance of test jig and connectors. Vin TURN ON WAVEFORMS ton Vout % 9% PULSE GENERATOR Vin RISE TIME SOURCE IMPEDANCE = 5 Ω PW ns DUTY CYCLE < % Vin 5 Ω. kω VBB + Ω. k. µf. µf.5 µf.5 µf. µf. µf. µf 5 Ω + VCC = V Figure 5. Turn On and Turn Off Time Test Circuit Vout TO OSCILLOSCOPE INPUT IMPEDANCE = 5 Ω RISE TIME = ns TURN OFF WAVEFORMS Vin Vout toff % 9% VBB = + V Vin = 5 V CAPACITANCE (pf) 6 5 4 TJ = 5 C Cib LIMIT TYPICAL Cob SWITCHING TIMES (nsec) 5 5 tr (VCC = V) ts tf tr βf = VCC = V VOB = V VCC = V td...5.. 5. REVERSE BIAS (VOLTS) Figure 6. Junction Capacitance Variations 5 5 Figure 7. Typical Switching Times Motorola Small Signal Transistors, FETs and Diodes Device Data
CHARGE (pc) 5 5 VCC = V 5 C C QA, VCC = V QT, βf = 4 QT, βf = +5 V V t PULSE WIDTH (t) = 5 µs 7 V pf MAX 4. k VALUES REFER TO IC = ma TEST Cs* < 4 pf QA, VCC = V Figure 9. QT Test Circuit 5 5 Figure 8. Maximum Charge Data C < COPT C = +6 V t V 98 C COPT 4 V 5 Cs* < pf TIME PULSE WIDTH (t) = ns Figure. Turn Off Waveform Figure. Storage Time Equivalent Test Circuit VCE, MAXIMUM COLLECTOR EMITTER VOLTAGE (VOLTS)..8 TJ = 5 C IC = ma IC = ma IC = ma IC = 5 ma IC = ma.6.4...5...5 5 IB, BASE CURRENT (ma) Figure. Maximum Collector Saturation Voltage Characteristics 4 Motorola Small Signal Transistors, FETs and Diodes Device Data
hfe, MINIMUM DC CURRENT GAIN 5 TJ = 5 C 75 C 5 C 5 C 55 C VCE = V TJ = 5 C and 75 C 5 5 Figure. Minimum Current Gain Characteristics.4. V(sat), SATURATION VOLTAGE (VOLTS)...8.6.4 βf = TJ = 5 C MAX VBE(sat) MIN VBE(sat) MAX VCE(sat) COEFFICIENT (mv/ C).5.5..5. θvc for VCE(sat) APPROXIMATE DEVIATION FROM NOMINAL 55 C to +5 C 5 C to 5 C θ VC ±.5 mv/ C ±.5 mv/ C θ VB ±.4 mv/ C ±. mv/ C θvb for VBE(sat) (5 C to 5 C) ( 55 C to +5 C) ( 55 C to +5 C) (5 C to 5 C). 5 5 Figure 4. Saturation Voltage Limits.5 4 5 6 7 8 9 Figure 5. Typical Temperature Coefficients Motorola Small Signal Transistors, FETs and Diodes Device Data 5
PACKAGE DIMENSIONS E F H M B A D PL N J P G L C K T.6 (.4) M T A M H M N SEATING PLANE CASE (TO 6AA) ISSUE R STYLE : PIN. EMITTER. BASE. COLLECTOR NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 98.. CONTROLLING DIMENSION: INCH.. DIMENSION J MEASURED FROM DIMENSION A MAXIMUM. 4. DIMENSION F APPLIES BETWEEN DIMENSION P AND L. DIMENSION D APPLIES BETWEEN DIMENSION L AND K MINIMUM. LEAD DIAMETER IS UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. 5. DIMENSION E INCLUDES THE TAB THICKNESS. (TAB THICKNESS IS.5(.) MAXIMUM). INCHES MILLIMETERS DIM MIN MAX MIN MAX A.9. 5. 5.84 B.78.95 4.5 4.95 C.7. 4. 5. D.6..46.5 E..76 F.6.9.46.48 G. BSC.54 BSC H.6.46.94.7 J.8.48.7. K.5.7 L.5 6.5 M 45 BSC 45 BSC N.5 BSC.7 BSC P.5.7 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi SPD JLDC, 6F Seibu Butsuryu Center, P.O. Box 9; Phoenix, Arizona 856. 8 44 447 or 6 5454 4 Tatsumi Koto Ku, Tokyo 5, Japan. 8 5 85 MFAX: RMFAX@email.sps.mot.com TOUCHTONE 6 44 669 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://design NET.com 5 Ting Kok Road, Tai Po, N.T., Hong Kong. 85 66998 6 Motorola Small Signal Transistors, FETs and Diodes Device N69/D Data