l Advanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D 2 Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D 2 Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF640NL) is available for lowprofile application. G TO-220AB IRF640NPbF HEXFET Power MOSFET D S D 2 Pak IRF640NSPbF PD - 95046A IRF640NPbF IRF640NSPbF IRF640NLPbF V DSS = 200V R DS(on) = 5Ω I D = 8A TO-262 IRF640NLPbF Absolute Maximum Ratings Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, V GS @ 0V 8 I D @ T C = 00 C Continuous Drain Current, V GS @ 0V 3 A I DM Pulsed Drain Current 72 P D @T C = 25 C Power Dissipation 50 W Linear Derating Factor.0 W/ C V GS Gate-to-Source Voltage ± 20 V E AS Single Pulse Avalanche Energy 247 mj I AR Avalanche Current 8 A E AR Repetitive Avalanche Energy 5 mj dv/dt Peak Diode Recovery dv/dt 8. V/ns T J Operating Junction and -55 to 75 T STG Storage Temperature Range C Soldering Temperature, for 0 seconds 300 (.6mm from case ) Mounting torque, 6-32 or M3 srew 0 lbf in (.N m) www.irf.com 07/23/0
Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 200 V V GS = 0V, I D = 250µA V (BR)DSS/ T J Breakdown Voltage Temp. Coefficient 0.25 V/ C Reference to 25 C, I D = ma R DS(on) Static Drain-to-Source On-Resistance 5 Ω V GS = 0V, I D = A ƒ V GS(th) Gate Threshold Voltage 2.0 4.0 V V DS = V GS, I D = 250µA g fs Forward Transconductance 6.8 S V DS = 50V, I D = A ƒ I DSS Drain-to-Source Leakage Current 25 V µa DS = 200V, V GS = 0V 250 V DS = 60V, V GS = 0V, T J = 50 C I GSS Gate-to-Source Forward Leakage 00 V GS = 20V na Gate-to-Source Reverse Leakage -00 V GS = -20V Q g Total Gate Charge 67 I D = A Q gs Gate-to-Source Charge nc V DS = 60V Q gd Gate-to-Drain ("Miller") Charge 33 V GS = 0V, See Fig. 6 and 3 t d(on) Turn-On Delay Time 0 V DD = 00V t r Rise Time 9 I D = A ns t d(off) Turn-Off Delay Time 23 R G = 2.5Ω t f Fall Time 5.5 R D = 9.0Ω, See Fig. 0 ƒ Between lead, L D Internal Drain Inductance 4.5 6mm (0.25in.) nh G from package L S Internal Source Inductance 7.5 and center of die contact C iss Input Capacitance 60 V GS = 0V C oss Output Capacitance 85 V DS = 25V C rss Reverse Transfer Capacitance 53 pf ƒ =.0MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 8 (Body Diode) showing the A G I SM Pulsed Source Current integral reverse 72 (Body Diode) p-n junction diode. S V SD Diode Forward Voltage.3 V T J = 25 C, I S = A, V GS = 0V ƒ t rr Reverse Recovery Time 67 25 ns T J = 25 C, I F = A Q rr Reverse Recovery Charge 929 394 nc di/dt = 00A/µs ƒ t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S L D ) Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case.0 R θcs Case-to-Sink, Flat, Greased Surface 0.50 C/W R θja Junction-to-Ambient 62 R θja Junction-to-Ambient (PCB mount) 40 www.irf.com 2
I D, Drain-to-Source Current (A) 00 0 VGS TOP 5V 0V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V I D, Drain-to-Source Current (A) 00 0 VGS TOP 5V 0V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WIDTH T J = 25 C 0.0 0 00 V DS, Drain-to-Source Voltage (V) 20µs PULSE WIDTH T J = 75 C 0 00 V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I D, Drain-to-Source Current (A) 00 0 T J = 75 C T J = 25 C V DS= 50V 20µs PULSE WIDTH 4.0 5.0 6.0 7.0 8.0 9.0 0.0 V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 3.5 I D = 8A 3.0 2.5 2.0.5.0 0.5 V GS= 0V 0.0-60 -40-20 0 20 40 60 80 00 20 40 60 80 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3
C, Capacitance(pF) IRF640N/S/LPbF 2500 2000 500 000 500 Ciss Coss Crss V GS = 0V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd V GS, Gate-to-Source Voltage (V) 20 6 2 8 4 I D = A V DS= 60V V DS= 00V V DS= 40V 0 0 00 000 V DS, Drain-to-Source Voltage (V) 0 0 20 40 60 80 Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I SD, Reverse Drain Current (A) 00 0 T J = 75 C T J = 25 C V GS= 0 V 0.2 0.4 0.6 0.8.0.2.4.6 V SD,Source-to-Drain Voltage (V) I D, Drain Current (A) 000 00 0 OPERATION IN THIS AREA LIMITED BY R DS(on) 0us 00us ms 0ms TC = 25 C TJ = 75 C Single Pulse 0 00 000 V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 4
I D, Drain Current (A) I D, Drain Current (A) 20 20 6 6 2 2 8 8 4 4 R D V DS V GS D.U.T. R G 0V Pulse Width µs Duty Factor % Fig 0a. Switching Time Test Circuit V DS 90% V - DD 0 0 25 50 75 00 25 50 75 25 50 T 75 00 25 50 75 C, Case Temperature ( C) T C, Case Temperature ( C) 0% V GS t d(on) t r t d(off) t f Fig 9. Maximum Drain Current Vs. Case Temperature Fig 0b. Switching Time Waveforms 0 Thermal Response(Z thjc ) D = 0.50 0.20 0 0.05 0.02 SINGLE PULSE t2 0.0 (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 0.0 2. Peak T J=P DMx Z thjc TC 0.0000 0.000 0.00 0.0 t, Rectangular Pulse Duration (sec) PDM t Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5
5V V DS L DRIVER R G D.U.T IAS - V DD A 20V tp 0.0Ω Fig 2a. Unclamped Inductive Test Circuit V (BR)DSS tp E AS, Single Pulse Avalanche Energy (mj) 600 500 400 300 200 00 I D TOP 4.4A 7.6A BOTTOM A 0 25 50 75 00 25 50 75 Starting T, Junction Temperature ( J C) Fig 2c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 2b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ Q G 2V.2µF.3µF 0 V Q GS Q GD D.U.T. V - DS V GS V G 3mA Charge Fig 3a. Basic Gate Charge Waveform I G I D Current Sampling Resistors Fig 3b. Gate Charge Test Circuit www.irf.com 6
Peak Diode Recovery dv/dt Test Circuit D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - R G dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test - V DD Driver Gate Drive Period P.W. D = P.W. Period V GS =0V * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt V DD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 4. For N-Channel HEXFET Power MOSFETs www.irf.com 7
TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF00 LOT CODE 789 ASSEMBLED ON WW 9, 2000 IN THE ASSEMBLY LINE "C" Note: "P" in assembly line position indicates "Lead - Free" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 0 = 2000 WEEK 9 LINE C TO-220AB package is not recommended for Surface Mount Application Notes:. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 8
D 2 Pak (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D 2 Pak (TO-263AB) Part Marking Information THIS IS AN IRF530S WITH LOT CODE 8024 ASS EMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L" INTERNATIONAL RECTIFIER LOGO AS S EMBLY LOT CODE F530S PART NUMBER DATE CODE YEAR 0 = 2000 WEEK 02 LINE L OR INTERNATIONAL RECTIFIER LOGO AS S EMBLY LOT CODE F530S PART NUMBER DATE CODE P = DES IGNATES LEAD - FREE PRODUCT (OPTIONAL) YEAR 0 = 2000 WEEK 02 A = ASSEMBLY SITE CODE Notes:. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9
TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL303L LOT CODE 789 ASSEMBLED ON WW 9, 997 IN THE ASSEMBLY LINE "C" Note: "P" in assembly line position indicates "Lead-Free" OR INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 997 WEEK 9 LINE C INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 7 = 997 WEEK 9 A = ASSEMBLY SITE CODE Notes:. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 0
D 2 Pak Tape & Reel Infomation Dimensions are shown in millimeters (inches) TRR.60 (.063).50 (.059) 4.0 (.6) 3.90 (.53).60 (.063).50 (.059) 0.368 (.045) 0.342 (.035) FEED DIRECTION TRL.85 (.073).65 (.065) 0.90 (.429) 0.70 (.42).60 (.457).40 (.449) 6.0 (.634) 5.90 (.626).75 (.069).25 (.049) 5.42 (.609) 5.22 (.60) 24.30 (.957) 23.90 (.94) 4.72 (.36) 4.52 (.78) FEED DIRECTION 3.50 (.532) 2.80 (.504) 27.40 (.079) 23.90 (.94) 4 330.00 (4.73) MAX. 60.00 (2.362) MIN. NOTES :. COMFORMS TO EIA-48. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (.039) 24.40 (.96) 3 30.40 (.97) MAX. 4 Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 4.2mH R G = 25Ω, I AS = A. ƒ Pulse width 400µs; duty cycle 2%. This is only applied to TO-220AB package This is applied to D 2 Pak, when mounted on " square PCB ( FR-4 or G-0 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. I SD A, di/dt 344A/µs, V DD V (BR)DSS, T J 75 C Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (30) 252-705 TAC Fax: (30) 252-7903 Visit us at www.irf.com for sales contact information.07/200 www.irf.com