APA9D Features X-Band W High Amplifier 9 to GHz Frequency Range W Saturated Output db Small Signal 36% Typical Added Efficiency ChipDimensions2.8 3..1mm 3 V Supply voltage Description The X-Band HPA is two stage 9 ~ GHz GaN MMIC power amplifier has a large signal gain of db with a + dbm saturated output power This die is manufactured using.2 um gate length GaN on SiC Technology. The MMIC uses gold bonding pads and backside metallization i Electrical Characteristics(Vd=V, Vg=-2.7V, Pin=dBm, Duty %@1kHz, T A =2 ) Characteristic Symbol Min Typ Max Unit Frequency Range f 9 GHz Input Return Loss S11 9 db Output Return Loss S22 11 db Small Signal S21 db Flatness ΔS21 1.2 db Reverse Isolation S12 db Saturated Output P SAT dbm Added Efficiency % Drain Bias Voltage V D + VDC Gate Bias Voltage V G -2.7 VDC Absolute Maximum Ratings Characteristic Symbol Rating Unit Operating Temp. T A - ~ 8 Storage Temp. T STG - ~ 1 237, Namdongseo-ro, Namdong-gu, Incheon, -849, Korea 1 Rev 1 26-Aug-14
APA9D Vd=V, Vg=-2.7V, CW, T A =2 S21 Sij (db) S11 S22 ( devices) 47 Vd=V, Vg=-2.7V, Pin=dBm, Duty %@1kHz, T A =2.. (dbm). 43. (%) 43. 237, Namdongseo-ro, Namdong-gu, Incheon, -849, Korea 2 Rev 1 26-Aug-14
APA9D Vd=V, Vg=-2.7V, Freq.=9GHz, Duty %@1kHz B),, (d 2 21 22 23 24 2 26 27 28 29 31 Input Vd=2V, Vg=-2.7V, Freq.=9GHz, Duty %@1kHz, (db), 2 21 22 23 24 2 26 27 28 29 31 Input 237, Namdongseo-ro, Namdong-gu, Incheon, -849, Korea 3 Rev 1 26-Aug-14
APA9D Vd=V, Vg=-2.7V, Freq.=9GHz, Duty %@1kHz B),, (d 2 21 22 23 24 2 26 27 28 29 31 Input Vd=V, Vg=-2.7V, Freq.=GHz, Duty %@1kHz, (db), 2 21 22 23 24 2 26 27 28 29 31 Input 237, Namdongseo-ro, Namdong-gu, Incheon, -849, Korea 4 Rev 1 26-Aug-14
APA9D Vd=2V, Vg=-2.7V, Freq.=GHz, Duty %@1kHz B),, (d 2 21 22 23 24 2 26 27 28 29 31 Input Vd=V, Vg=-2.7V, Freq.=GHz, Duty %@1kHz, (db), 2 21 22 23 24 2 26 27 28 29 31 Input 237, Namdongseo-ro, Namdong-gu, Incheon, -849, Korea Rev 1 26-Aug-14
APA9D Vd=V, Vg=-2.7V, Pin=dBm, Duty %@1kHz, T A =2 Vd=V, Vg=-2.7V, Pin=dBm, Duty %@1kHz, T A =2 Vd=2V, Vg=-2 2.7V, Pin=dBm, Duty %@1kHz, T A =2 Vd=2V, Vg=-2 2.7V, Pin=dBm, Duty %@1kHz, T A =2 Vd=V, Vg=-2.7V, Pin=dBm, Duty %@1kHz, T A =2 Vd=V, Vg=-2.7V, Pin=dBm, Duty %@1kHz, T A =2 237, Namdongseo-ro, Namdong-gu, Incheon, -849, Korea 6 Rev 1 26-Aug-14
APA9D Vd=V, Vg=-2.7V, Pin=dBm, Duty %@1kHz, T A =8 Vd=V, Vg=-2.7V, Pin=dBm, Duty %@1kHz, T A =8 Vd=2V, Vg=-2.7V, Pin=dBm, Duty %@1kHz, T A =8 A Vd=2V, Vg=-2.7V, Pin=dBm, Duty %@1kHz, T A =8 Vd=V, Vg=-2.7V, Pin=dBm, Duty %@1kHz, T A =8 Vd=V, Vg=-2.7V, Pin=dBm, Duty %@1kHz, T A =8 237, Namdongseo-ro, Namdong-gu, Incheon, -849, Korea 7 Rev 1 26-Aug-14
APA9D Vd=V, Vg=-2.7V, Pin=dBm, Duty %@1kHz, T A =- Vd=V, Vg=-2.7V, Pin=dBm, Duty %@1kHz, T A =- Vd=2V, Vg=-2 2.7V, Pin=dBm, Duty %@1kHz, T A =- Vd=2V, Vg=-2.7V, Pin=dBm, Duty %@1kHz, T A =- Vd=V, Vg=-2.7V, Pin=dBm, Duty %@1kHz, T A =- Vd=V, Vg=-2.7V, Pin=dBm, Duty %@1kHz, T A =- 237, Namdongseo-ro, Namdong-gu, Incheon, -849, Korea 8 Rev 1 26-Aug-14
APA9D Mechanical Information 3. mm Bond Pad Information 28mm 2.8 Pad Type Nominal Voltage Size (um) RF IN/OUT RF N/A VG1L,VG1U DC -2.7 V 7 VD1L,VD1UVD1U DC +. V 1 VD2L,VD2U DC +. V 1 C DC N/A 237, Namdongseo-ro, Namdong-gu, Incheon, -849, Korea 9 Rev 1 26-Aug-14
APA9D Assembly and Bonding Diagram Vg Vd 1uF nf 4.7nH 1uF nf pf pf 3pF pf RF IN RF OUT pf pf 3pF pf nf 1uF 47nH 4.7nH nf 1uF Vg Vd 237, Namdongseo-ro, Namdong-gu, Incheon, -849, Korea Rev 1 26-Aug-14