Fiber Optics. Plastic Fiber Optic Phototransistor Detector Plastic Connector Housing SFH350 SFH350V

Similar documents
Fiber Optics. Plastic Fiber Optic Transmitter Diode Plastic Connector Housing SFH756 SFH756V

BFG235. NPN Silicon RF Transistor*

Type Marking Pin Configuration Package BFP520F APs 1=B 2=E 3=C 4=E - - TSFP-4

BGB420, Aug BGB420. Active Biased Transistor MMIC. Wireless Silicon Discretes. Never stop thinking.

BCR Type Marking Pin Configuration Package BCR133 BCR133S BCR133W Pb-containing package may be available upon special request C 3

Data Sheet, Rev. 2.3, Sept BGA428. Gain and PCS Low Noise Amplifier. RF & Protection Devices

BCR129 BCR129S BCR129W

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type Marking Pin Configuration Package BCR08PN WFs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type Marking Pin Configuration Package BCR112 BCR112W 1=B 1=B 2=E 2=E 3=C 3=C

BFP420. NPN Silicon RF Transistor

BF776. High Performance NPN Bipolar RF Transistor

Data Sheet, Rev. 2.1, Sept BGA612. Silicon Germanium Broadband MMIC Amplifier. RF & Protection Devices

Type Marking Pin Configuration Package BFR92P GFs 1=B 2=E 3=C SOT23

BCR BCR112/F BCR112W. Type Marking Pin Configuration Package BCR112 BCR112F BCR112W. WFs WFs WFs 3=C 3=C 3=C 2=E 2=E 2=E - - -

Data Sheet, Rev. 2.2, April 2008 BGA622L7. Silicon Germanium Wide Band Low Noise Amplifier with 2 kv ESD Protection. Small Signal Discretes

BPW17N. Silicon NPN Phototransistor. Vishay Semiconductors

BCR BCR108/F BCR108T/W BCR108S. Type Marking Pin Configuration Package BCR108 BCR108F 2=E 2=E SOT23 TSFP-3 BCR108S BCR108W 3=C 3=C - - 1=B 1=B

Type Marking Pin Configuration Package BFR193 RCs 1 = B 2 = E 3 = C SOT23

Type Marking Pin Configuration Package BCR405U L5s 1 = GND 2;3;5 = I out 4 = V S 6 = R ext SC74

BCR BCR183 BCR183W BCR183S BCR183U. Type Marking Pin Configuration Package BCR183 BCR183S BCR183U SOT23 SOT363 SC74 SOT323.

Data sheet, BGA614, Nov BGA614. Silicon Germanium Broadband MMIC Amplifier MMIC. Secure Mobile Solutions Silicon Discretes. Never stop thinking.

Application Note No. 022

BAT17... Silicon Schottky Diode For mixer applications in VHF/UHF range For high-speed switching application Pb-free (RoHS compliant) package

Type Marking Pin Configuration Package BCR139F BCR139L3 BCR139T 2=E 2=E 2=E 1=B 1=B 1=B 3=C 3=C 3=C

Silicon NPN Phototransistor

BAS70.../BAS170W BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04W BAS70-04S BAS70-05W BAS70-06 BAS70-06W BAS70-07 BAS70-07W

Silicon PIN Photodiode

ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Configuration L S (nh) Marking BAT15-02EL BAT15-02ELS

Silicon NPN Phototransistor

BAS40.../BAS140W BAS40-05 BAS40-05W BAS40-06 BAS40-06W BAS40-02L BAS40-07 BAS40-07W

TLE4905G TLE4935G TLE4935-2G TLE4945-2G

BPV11. Silicon NPN Phototransistor. Vishay Semiconductors

Type Marking Pin Configuration Package BFP196 RIs 1 = C 2 = E 3 = B 4 = E - - SOT143

Silicon NPN Phototransistor

BAT68... Silicon Schottky Diodes For mixer applications in the VHF / UHF range For high-speed switching applications Pb-free (RoHS compliant) package

Silicon NPN Phototransistor

Silicon PIN Photodiode

Silicon NPN Phototransistor

Silicon NPN Phototransistor

BCR401R LED Driver Features Applications General Description

5-V Low-Drop Voltage Regulator TLE Bipolar IC

TrenchStop Series. Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Type Package Configuration L S (nh) Marking BB814 SOT23 common cathode 1.8 SH1/2*

TEFT4300. Silicon NPN Phototransistor. Vishay Semiconductors

For broadband amplifiers up to 1 GHz at collector currents from 1 ma to 20 ma For mixers and oscillators in sub-ghz applications

PROFET ITS716G Ω Ω. Green Product (RoHS compliant) Data Sheet 1 Rev. 1.1,

Silicon NPN Phototransistor

BPW41N. Silicon PIN Photodiode. Vishay Semiconductors

Silicon Phototransistor in 0805 Package


Type Marking Pin Configuration Package BCR400W W4s 1=GND/E NPN 2=Contr/B NPN 3V S 4=Rext/C NPN SOT343

BCR401U. LED Driver Features LED drive current of 10mA Output current adjustable up to 65mA with external resistor 4 5. Supply voltage up to 40V

BPV11F. Silicon NPN Phototransistor VISHAY. Vishay Semiconductors

Type Marking Pin Configuration Package BFP540ESD AUs 1=B 2=E 3=C 4=E - - SOT343

Power Charge Pump and Low Drop Voltage Regulator TLE 4307

Smart High-Side Power Switch BTS4140N

Silicon PIN Photodiode

S186P. Silicon PIN Photodiode. Vishay Semiconductors

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

Silicon NPN Phototransistor, RoHS Compliant

Data Sheet, V 1.1, Oct TLE4906H TLE4906L. High Precision Hall-Effect Switch. Sensors

Silicon NPN Phototransistor, RoHS Compliant

1200mA step down - LED controller IC ILD4120

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

Robust low noise broadband pre-matched RF bipolar transistor

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Silicon PIN Photodiode, RoHS Compliant

Silicon Phototransistor in 0805 Package

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

Silicon NPN Phototransistor, RoHS Compliant

BAR64... BAR64-02LRH BAR64-02V BAR64-03W BAR64-06 BAR64-06W BAR64-05 BAR64-05W BAR64-04W

TEPT5600. Ambient Light Sensor. Vishay Semiconductors

ESD0P2RF-02LRH ESD0P2RF-02LS

Silicon NPN Phototransistor, RoHS Compliant

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

Type Marking Pin Configuration Package BFP520 APs 1=B 2=E 3=C 4=E - - SOT343

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Silicon PIN Photodiode, RoHS Compliant

The BFP840FESD is a discrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications.

Optocoupler, Phototransistor Output, with Base Connection

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

IGB03N120H2. HighSpeed 2-Technology. Power Semiconductors 1 Rev. 2.4 Oct. 07


BPW17N. Silicon NPN Phototransistor. Vishay Semiconductors. Description. Features. Applications Detector in electronic control and drive circuits

Silicon Phototransistor in 0805 Package

Silicon PIN Photodiode, RoHS Compliant, Released for Lead (Pb)-free Solder Process, AEC-Q101 Released

BPV23NF(L) Silicon PIN Photodiode. Vishay Semiconductors

Silicon PIN Photodiode, RoHS Compliant

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

Ambient Light Sensor

Low Drop Voltage Regulator TLE 4274

January 2009 TLE4906K / TLE4906L. High Precision Hall Effect Switch. Data Sheet V 2.0. Sensors

Silicon PIN Photodiode, RoHS Compliant

High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs

Silicon PIN Photodiode

High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero

Silicon PIN Photodiode, RoHS Compliant

BPW46L. Silicon PIN Photodiode. Vishay Semiconductors

Transcription:

Fiber Optics Plastic Fiber Optic Phototransistor Detector Plastic Connector Housing SFH350 Features 2.2 mm Aperture holds Standard 1000 Micron Plastic Fiber No Fiber Stripping Required Good Linearity Sensitive in visible and near IR Range Molded Microlens for Efficient Coupling Plastic Connector Housing Mounting Screw Attached to the Connector Interference Free Transmission from light-tight Housing Transmitter and Receiver can be flexibly positioned No Cross Talk Auto insertable and Wave solderable Supplied in Tubes Applications Household Electronics Power Electronics Optical Networks Medical Instruments Automotive Electronics Light Barriers Type SFH350 Ordering Code Q62702-P1033 Q62702-P0264 Data Sheet 1 2002-03-14

Absolute Maximum Ratings Parameter Symbol Limit Values Unit min. max. Operating Temperature Range T OP -40 +85 C Storage Temperature Range T STG -55 +100 Soldering Temperature T S 260 (2 mm from case bottom, t 5s) Collector-Emitter Voltage V CE 50 V Collector Current I C 50 ma Collector Peak Current (t 10 s) I CP 100 Emitter-Bas Voltage V EB 7 V Reverse Voltage V R 30 Power Dissipation T A = 25 C P TOT 200 mw Thermal Resistance, Junction/Air R thja 375 K/W Data Sheet 2 2002-03-14

Characteristics (T A = 25 C) Parameter Symbol Limit Values Unit min. typ. max. Maximum Photosensitivity Wavelength λ Smax 850 nm Photosensitivity Spectral Range (S = 10% S max ) λ 400 1100 Dark Current (V R = 20 V) I R 1 ( 10) na Capacitance (f = 1 MHz, without light) (V CE = 0 V) (V CB = 0 V) (V EB = 0 V) Rise and Fall Times of Photo Current (R L = 1 kω, V CE = 5 V, I C = 1.0 ma, λ = 959 nm) 10% to 90% 90% to 10% C CE C CB C EB 10.5 21.5 20.5 t R 20 t F 20 Current Gain HFE 500 Collector Dark Current I CE0 2 ( 50) na (V CE = 5 V) Photo Current (V CE = 5 V, Φ IN = 10 µw coupled from the end of a plastic fiber, λ = 660 nm) I CE 0.8 ( 0.16) Temperature Coefficient HFE TC HFE 0.55 %/K Temperature Coefficient I CE TC I 0.34 λ = 560 to 660 nm Temperature Coefficient I CE 0.49 λ = 830 nm Temperature Coefficient I CE λ = 950 nm 0.66 pf µs ma Data Sheet 3 2002-03-14

Data Sheet 4 2002-03-14

Data Sheet 5 2002-03-14

Package Outlines Package Outlines SFH350 Figure 1 Figure 2 (dimensions in mm, unless otherwise specified) Data Sheet 6 2002-03-14

Revision History: 2002-03-14 DS0 Previous Version: Page Subjects (major changes since last revision) Document s layout has been changed: 2002-Aug. For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://www.infineon.com. Edition 2002-03-14 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2002. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide. Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life-support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.