MJDH (NPN) MJD5H (PNP) Preferred Device Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves ( - Suffix) Electrically Similar to Popular DH/D5H Series Low Collector Emitter Saturation Voltage - V CE(sat) =.0 Volt Max @ 8.0 Amperes Fast Switching Speeds Complementary Pairs Simplifies Designs Epoxy Meets UL 9 V-0 @ 25 in ESD Ratings: Human Body Model, 3B 8000 V Machine Model, C 00 V Pb-Free Packages are Available MAXIMUM RATINGS Rating Symbol Max Unit Collector-Emitter Voltage V CEO 80 Vdc Emitter-Base Voltage V EB 5 Vdc Collector Current - Continuous - Peak I C 8 6 Adc Total Power Dissipation @ T C = Derate above Total Power Dissipation (Note ) @ T A = Derate above Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS P D 20 6 P D.75 0.0 W W/ C W W/ C T J, T stg - 55 to + 50 C Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Case R JC 6.25 C/W Thermal Resistance, Junction-to-Ambient R JA 7. C/W (Note ) Lead Temperature for Soldering T L 260 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. These ratings are applicable when surface mounted on the minimum pad sizes recommended. SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS, 20 WATTS 2 3 2 3 CASE 369C STYLE -3 CASE 369D STYLE MARKING DIAGRAMS YWW J xhg YWW J xhg Y = Year WW = Work Week JxH = Device Code x = or 5 G = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2008 January, 2008 - Rev. 8 Publication Order Number: MJDH/D
MJDH (NPN) MJD5H (PNP) ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) OFF CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Collector-Emitter Sustaining Voltage (I C = 30 ma, I B = 0) Collector Cutoff Current (V CE = Rated V CEO, V BE = 0) Emitter Cutoff Current (V EB = 5 Vdc) V CEO(sus) 80 Vdc I CES.0 A I EBO.0 A ON CHARACTERISTICS Collector-Emitter Saturation Voltage (I C = 8 Adc, I B = 0. Adc) Base-Emitter Saturation Voltage (I C = 8 Adc, I B = 0.8 Adc) DC Current Gain (V CE = Vdc, I C = 2 Adc) DC Current Gain (V CE = Vdc, I C = Adc) V CE(sat) Vdc V BE(sat).5 Vdc h FE 60-0 DYNAMIC CHARACTERISTICS Collector Capacitance (V CB = 0 Vdc, f test = MHz) MJDH MJD5H Gain Bandwidth Product (I C = Adc, V CE = 0 Vdc, f = 20 MHz) MJDH MJD5H SWITCHING TIMES Delay and Rise Times (I C = 5 Adc, I B = Adc) MJDH MJD5H Storage Time (I C = 5 Adc, I B = I B2 = Adc) MJDH MJD5H Fall Time (I C = 5 Adc, I B = I B2 = Adc MJDH MJD5H C cb 5 30 f T 85 90 t d + t r 300 35 t s 500 500 t f 0 00 pf MHz ns ns ns 2
MJDH (NPN) MJD5H (PNP) r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.7 0.3 0.2 0.07 0.05 0.03 0.02 0.0 0.0 D = 0.05 0.02 0.2 SINGLE PULSE 0.0 R JC(t) = r(t) R JC R JC = 6./W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T J(pk) - T C = P (pk) JC(t) 0.02 0.03 0.05 0.2 0.3 2 3 5 0 20 30 50 00 200 300 500 t, TIME (ms) P (pk) t t 2 DUTY CYCLE, D = t /t 2 k Figure. Thermal Response IC, COLLECTOR CURRENT (AMP) 20 0 5 3 2 0.3 0.05 0.02 dc 5 ms 500 s THERMAL LIMIT @ T C = WIRE BOND LIMIT 00 s ms 3 5 7 0 20 30 50 70 00 V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C - V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on T J(pk) = 50 C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 0% provided T J(pk) 50 C. T J(pk) may be calculated from the data in Figure. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 2. Maximum Forward Bias Safe Operating Area T A 2.5 T C 25 PD, POWER DISSIPATION (WATTS) 2.5 20 5 0 5 T C T A SURFACE MOUNT 0 0 25 50 75 00 25 50 T, TEMPERATURE ( C) Figure 3. Power Derating 3
MJDH (NPN) MJD5H (PNP) 000 V CE = V 000 V CE = V hfe, DC CURRENT GAIN 00 50 C hfe, DC CURRENT GAIN 00 50 C 0 0.0 0 0 0.0 0 Figure. MJDH DC Current Gain Figure 5. MJD5H DC Current Gain 000 V CE = V 000 V CE = V hfe, DC CURRENT GAIN 00 50 C h FE, DC CURRENT GAIN 00 50 C 0 0.0 0 0 0.0 0 Figure 6. MJDH DC Current Gain Figure 7. MJD5H DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE (V) I C /I B = 0 0.0 50 C 0 COLLECTOR-EMITTER SATURATION VOLTAGE (V) I C /I B = 0 0.0 50 C 0 Figure 8. MJDH Saturation Voltage V CE(sat) Figure 9. MJD5H Saturation Voltage V CE(sat)
MJDH (NPN) MJD5H (PNP) BASE-EMITTER SATURATION VOLTAGE (V).2. 0.9 0.8 0.7 0.6 0. I C /I B = 0 50 C 0 BASE-EMITTER SATURATION VOLTAGE (V).2. 0.9 0.8 0.7 0.6 0. I C /I B = 0 50 C 0 Figure 0. MJDH Saturation Voltage V BE(sat) Figure. MJD5H Saturation Voltage V BE(sat) 5
MJDH (NPN) MJD5H (PNP) ORDERING INFORMATION MJDH MJDHG MJDH-00 MJDH-00G Device Package Type Package Shipping -3-3 369C 369D 75 Units / Rail MJDHRL MJDHRLG 800 Tape & Reel MJDHT MJDHTG MJDHT5 369C 2500 Tape & Reel MJDHT5G MJD5H MJD5HG MJD5H-00-3 75 Units / Rail MJD5H-00G -3 369D MJD5HRL MJD5HRLG MJD5HT MJD5HTG 369C 800 Tape & Reel 2500 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD80/D. 6
MJDH (NPN) MJD5H (PNP) PACKAGE DIMENSIONS CASE 369C ISSUE O B C -T- SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.5M, 982. 2. CONTROLLING DIMENSION: INCH. V S F R 2 3 G L A K D 2 PL J H 3 (0.005) M T E U Z INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.235 0.25 5.97 6.22 B 0.250 0.265 6.35 6.73 C 0.086 0.09 2.9 2.38 D 0.027 0.035 0.69 0.88 E 0.08 0.023 0.6 8 F 0.037 0.05 0.9. G 80 BSC.58 BSC H 0.03 0.00 0.87.0 J 0.08 0.023 0.6 8 K 02 2.60 2.89 L 0.090 BSC 2.29 BSC R 80 0.25.57 5.5 S 0.025 0.00 0.63.0 U 0.020 --- --- V 0.035 0.050 0.89.27 Z 55 --- 3.93 --- STYLE : PIN. BASE 2. COLLECTOR 3. EMITTER. COLLECTOR SOLDERING FOOTPRINT* 6.20 0.2 2.58 0 3.0 8 5.80 0.228.6 0.063 6.72 0.23 SCALE 3: mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 7
MJDH (NPN) MJD5H (PNP) PACKAGE DIMENSIONS -3 CASE 369D-0 ISSUE B V B R C E NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.5M, 982. 2. CONTROLLING DIMENSION: INCH. S -T- SEATING PLANE F 2 3 G A K D 3 PL J 3 (0.005) M T H Z INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.235 0.25 5.97 6.35 B 0.250 0.265 6.35 6.73 C 0.086 0.09 2.9 2.38 D 0.027 0.035 0.69 0.88 E 0.08 0.023 0.6 8 F 0.037 0.05 0.9. G 0.090 BSC 2.29 BSC H 0.03 0.00 0.87.0 J 0.08 0.023 0.6 8 K 0.350 0.380 8.89 9.65 R 80 0.25.5 5.5 S 0.025 0.00 0.63.0 V 0.035 0.050 0.89.27 Z 55 --- 3.93 --- STYLE : PIN. BASE 2. COLLECTOR 3. EMITTER. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 8027 USA Phone: 303-675-275 or 800-3-3860 Toll Free USA/Canada Fax: 303-675-276 or 800-3-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 2 33 790 290 Japan Customer Focus Center Phone: 8-3-5773-3850 8 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJDH/D