STTH4R02-Y. Automotive ultrafast recovery diode. Description. Features

Similar documents
STTH2R02-Y. Automotive ultrafast recovery diode. Description. Features

STTH1R02-Y. Automotive ultrafast rectifier

STTH1R04-Y. Automotive ultrafast recovery diode

STTH8R02D-Y. Automotive ultrafast rectifier

STTH15RQ06-Y. Automotive turbo 2 ultrafast high voltage rectifier

STTH3L06S. Turbo 2 ultrafast high voltage rectifier

STPS1L40-Y. Automotive low drop power Schottky rectifier

TL = 140 C 2 A. Table 3: Thermal parameters Symbol Parameter Max. value Unit Rth(j-l) Junction to lead 20 C/W

STPSC10H065-Y. Automotive 650 V power Schottky silicon carbide diode. Description. Features

FERD20H60C. 60 V field-effect rectifier diode. Description. Features

STTH4R02. Ultrafast recovery diode. Description. Features

STPSC20H V power Schottky silicon carbide diode. Description. Features

STPSC10065-Y. Automotive 650 V power Schottky silicon carbide diode. Description. Features

STPSC20065-Y. Automotive 650 V power Schottky silicon carbide diode. Description. Features

STPSC12065-Y. Automotive 650 V power Schottky silicon carbide diode. Description. Features

STPSC2H V power Schottky silicon carbide diode. Description. Features

BAT54-Y. Automotive small signal Schottky diodes. Description. Features

STTH2002C. High efficiency ultrafast diode. Features. Description

STPS1L40. Low drop power Schottky rectifier

STBR3012. High voltage rectifier for bridge applications

STPS20LCD80CB. High voltage power Schottky rectifier

STPS1545. Power Schottky rectifier

STPSC10H V power Schottky silicon carbide diode. Description. Features

FERD15S50S. 50 V field-effect rectifier diode. Description. Features

STTH6003. High frequency secondary rectifier

STTH30L06C. Turbo 2 ultratfast high voltage rectifier

STPS20L45C. Low drop power Schottky rectifier

STTH3006. Turbo 2 ultrafast high voltage rectifier

STPS1150-Y. Automotive power Schottky rectifier. Datasheet. Features. Description

STTH120L06TV. Turbo 2 ultrafast high voltage rectifier

STPS60170C. High voltage power Schottky rectifier

STPS8H100. High voltage power Schottky rectifier. Features. Description

STPS200170TV1. High voltage power Schottky rectifier

STPSC10H12C V power Schottky silicon carbide diode

STPS20M100S. Power Schottky rectifier. Description. Features TO-220AB TO-220FPAB I 2 PAK D 2 PAK

STPS3H V power Schottky rectifier. Datasheet. Features. Applications. Description

STPSC30H12C V power Schottky silicon carbide diode. Description. Features

STPSC40065C. 650 V power Schottky silicon carbide diode. Description. Features

STPS3045DJF. Power Schottky rectifier. Description. Features

STBR3012-Y. Automotive high voltage rectifier for bridge applications. Datasheet. Features. Applications. Description

STPSC20H12C V power Schottky silicon carbide diode

STPS1L60. Power Schottky rectifier

STTH2003. High frequency secondary rectifier. Features. Description

STPS20SM100S. Power Schottky rectifier. Description. Features

STPSC10H V power Schottky silicon carbide diode. Datasheet. Features. Description

STPS160H100TV. High voltage power Schottky rectifier. Description. Features

STPSC V power Schottky silicon carbide diode

STPSC20H V power Schottky silicon carbide diode. Datasheet. Features. Description. No or negligible reverse recovery

STTH512. Ultrafast recovery V diode. Description. Features

STPS4S200. Power Schottky rectifier. Description. Features

STTH1003S. High efficiency rectifier. Description. Features

STPSC6H V power Schottky silicon carbide diode. Description. Features

STPS10170C. High voltage power Schottky rectifier. Description. Features

No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC applications

STPS15L60C. Power Schottky rectifier. Description. Features

Negligible switching losses Low forward voltage drop for higher efficiency and extended battery life Low thermal resistance K

BZW06. Transil. Description. Features

STTH V ultrafast high voltage rectifier. Datasheet. Features. Applications. Description

STTH110-Y. Automotive high voltage ultrafast rectifier. Description. Features

STPS40170C. 170 V power Schottky rectifier. Datasheet. Features. Applications. Description

STTH102-Y. Automotive high efficiency ultrafast diode. Features. Description

STPS3170. Power Schottky rectifier. Description. Features

STPS40SM120C. Power Schottky rectifier. Description. Features

STPS20H100C. 100 V power Schottky rectifier. Datasheet. Features. Description

Negligible switching losses Low forward voltage drop for higher efficiency and extended battery life Low thermal resistance K

STPSC20H065C-Y. Automotive 650 V power Schottky silicon carbide diode. Description. Features

STPS A - 30 V power Schottky rectifier. Datasheet. Features. Applications. Description

STPS10150C. High voltage power Schottky rectifier. Description. Features

STPS2L V power Schottky rectifier. Datasheet. Features. Applications. Description K SMB

FERD15S50. Field effect rectifier. Features. Description

T x V 25 A Snubberless Triac. Description. Features. Applications. Benefits

1N5806U. Aerospace 2.5 A fast recovery rectifier. Description. Features

AEC-Q101 qualified. High junction temperature capability Ultrafast with soft recovery behavior Low reverse current

BAT30. Small signal Schottky diodes. Description. Features

STTH2L06. High efficiency ultrafast diode. Features. Description

STPS30H100C. 100 V power Schottky rectifier. Datasheet. Features. Applications. Description. Negligible switching losses Low leakage current

STPS40H100CW. 100 V power Schottky rectifier. Datasheet. Features. Applications. Description

STPS340. Power Schottky rectifier. Description. Features

STIEC45-xxAS, STIEC45-xxACS

STPS80170C. 170 V power Schottky rectifier. Datasheet. Features. Applications. Description

SMM4FxxA. 400 W Transil TM. Description. Features. Complies with the following standards

TN B. Standard 15 A SCRs. Description. Features. Application. Benefits

1N6642U. Aerospace 0.3 A V switching diode. Description. Features

STPS1045B-Y. Automotive power Schottky rectifier. Features. Description

Features. Description. Table 1: Device summary Order code Marking Package Packing STD20NF06LAG D20N6LF6 DPAK Tape and Reel

STPS30H60-Y. Automotive power Schottky rectifier. Features. Description

SM6T250CAY. Automotive 600 W Transil. Description. Features. Complies with the following standards

TN1605H-6G. High temperature 16 A SCRs. Description. Features. Applications

TS420. Sensitive gate 4 A SCRs

STTH60W03C. Turbo 2 ultrafast high voltage rectifier. Features. Description

High junction temperature capability Low leakage current Low thermal resistance High frequency operation Avalanche capability ECOPACK 2 compliant

STPS20S100C. 100 V power Schottky rectifier. Datasheet. Features. Applications. Description

STTH16L06C. Turbo 2 ultrafast high voltage rectifier. Features. Description

N-channel 30 V, 2.8 mω typ., 80 A STripFET H7 Power MOSFET plus monolithic Schottky in a DPAK package. Features. Description

Features. Description. Table 1: Device summary Order code Marking Package Packing STD30NF06LAG D30NF06L DPAK Tape and reel

STTH1L06. Turbo 2 ultrafast high voltage rectifier. Features. Description

STPS2L60-Y. Automotive power Schottky rectifier. Features. Description

STTH4R06DEE. Turbo 2 ultrafast recovery diode. Features. Description

BAT30F4. Small signal Schottky diodes. Description. Features

STPS40170C-Y. Automotive high voltage power Schottky rectifier. Features. Description

Transcription:

Automotive ultrafast recovery diode Datasheet - production data Features K SMB A K NC Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature PPAP capable AEC-Q101 qualified K A DPAK K A A SMC Description This device uses ST's new 200 V planar Pt doping technology, and it is especially suited for switching mode base drive and transistor circuits. Packaged in SMB, SMC and DPAK, it is intended for use in low voltage, high frequency inverters, freewheeling and polarity protection in automotive applications. Table 1: Device summary Symbol IF(AV) VRRM Value 4 A 200 V Tj (max.) 175 C VF (typ.) trr (typ.) 0.76 V 16 ns April 2016 DocID17391 Rev 2 1/14 This is information on a product in full production. www.st.com

Characteristics STTH4R02-Y 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage Tj = -40 C to + 175 C 200 V IF(RMS) Forward rms current 10 A IF(AV) IFSM Average forward current δ = 0.5, square wave Surge non repetitive forward current DPAK Tc = 160 C SMB, SMC Tlead = 95 C 4 A tp = 10 ms sinusoidal 70 A Tstg Storage temperature range -65 to +175 C Tj Maximum operating junction temperature (1) -40 to +175 C Notes: (1) (dptot/dtj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 3: Thermal parameters Symbol Parameter Maximum Unit Rth(j-c) Junction to case DPAK 3.5 Rth(j-l) Junction to lead SMB, SMC 20 C/W Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) VF (2) Reverse leakage current Forward voltage drop Notes: (1) Pulse test: tp = 5 ms, δ < 2% (2) Pulse test: tp = 380 µs, δ < 2% Tj = 25 C - 3 VR = VRRM Tj = 125 C - 2 20 Tj = 25 C - 0.95 1.05 IF = 4 A Tj = 150 C - 0.76 0.83 µa V To evaluate the conduction losses use the following equation: P = 0.67 x IF(AV) + 0.04 IF 2 (RMS) 2/14 DocID17391 Rev 2

Table 5: Dynamic characteristics Characteristics Symbol Parameters Test conditions Min. Typ. Max. Unit trr IRM trr Qrr Reverse recovery time Reverse recovery current Reverse recovery time Reverse recovery charges Tj = 25 C Tj = 125 C IF = 1 A; dif/dt = -50 A/μs; VR = 30 V IF = 1 A; dif/dt = -100 A/μs; VR = 30 V IF = 4 A; dif/dt = -200 A/μs; VR = 160 V - 24 30-16 20 ns - 4.4 5.5 A - 27 ns - 60 nc 1.1 Characteristics (curves) Figure 1: Peak current versus duty cycle 50 I M (A) 45 T 40 35 δ= tp/t tp P = 5 W 30 25 20 P = 2 W 15 10 δ 5 P = 1 W 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Figure 2: Forward voltage drop versus forward current (typical values) 1.0E+02 1.0E+01 1.0E+00 1.0E-01 I FM (A) T j =150 C T j =25 C V FM (V) 1.0E-02 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Figure 3: Forward voltage drop versus forward current (maximum values) 1.0E+02 1.0E+01 I FM (A) T j=150 C Figure 4: Relative variation of thermal impedance, junction to case, versus pulse duration Z th(j-c) /R th(j-c) 1.0 DPAK 1.0E+00 T j=25 C 1.0E-01 V FM(V) 1.0E-02 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Single pulse t (s) P 0.1 1.E-03 1.E-02 1.E-01 1.E+00 DocID17391 Rev 2 3/14

Characteristics Figure 5: Relative variation of thermal impedance, junction to ambient, versus pulse duration (SMB) Z th(j-a) /R th(j-a) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 SMB S CU = 1 cm² t P (s) 0.0 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 STTH4R02-Y Figure 6: Relative variation of thermal impedance, junction to ambient, versus pulse duration (SMC) Z th(j-a) /R th(j-a) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 SMC S CU = 1 cm² t P (s) 0.0 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Figure 7: Junction capacitance versus reverse applied voltage (typical values) Figure 8: Reverse recovery charges versus dlf/dt (typical values) C(pF) 100 F = 1 MHz V OSC = 30 mv RMS T j = 25 C Q 120 RR (nc) I = 4 A F V R= 160 V 100 80 T j = 125 C 60 40 T j = 25 C V 10 R (V) 1 10 100 1000 20 dl /dt (A/µs) F 0 0 50 100 150 200 250 300 350 400 450 500 70 60 50 40 30 20 Figure 9: Reverse recovery time versus dlf/dt (typical values) t 80 RR (ns) I F = 4 A V R = 160 V T j = 125 C T j = 25 C 10 dl F /dt (A/µs) 0 10 100 1000 Figure 10: Peak reverse recovery current versus dlf/dt (typical values) I RM (A) 10 8 6 4 2 I F = 4 A V R = 160 V T j = 125 C T j = 25 C dl F /dt (A/µs) 0 0 50 100 150 200 250 300 350 400 450 500 4/14 DocID17391 Rev 2

Figure 11: Dynamic parameters versus junction temperature 1.4 1.2 1.0 0.8 0.6 0.4 0.2 Q RR ; I RM [T j ] / Q RR; I RM [T j = 125 C] I F = 4 A V R = 160 V I RM Q RR dl F /dt (A/µs) 0.0 25 50 75 100 125 150 Characteristics Figure 12: Thermal resistance, junction to ambient, versus copper surface under tab R th(j-a) ( C/W) 100 90 80 70 60 50 40 30 20 DPAK Epoxy printed board FR4, e CU = 35 µm 10 SCu(cm²) 0 0 5 10 15 20 25 30 35 40 Figure 13: Thermal resistance, junction to ambient, versus copper surface under each lead R th(j-a) ( C/W) 200 180 160 140 120 100 80 60 40 Epoxy printed board FR4, copper thickness = 35 µm SMB 20 S CU (cm²) 0 0 1 2 3 4 5 6 7 8 9 10 Figure 14: Thermal resistance, junction to ambient, versus copper surface under each lead R th(j-a) ( C/W) 160 Epoxy printed board FR4, copper thickness = 35 µm SMC 140 120 100 80 60 40 20 S CU (cm²) 0 0 1 2 3 4 5 6 7 8 9 10 DocID17391 Rev 2 5/14

Package information STTH4R02-Y 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 2.1 DPAK package information Figure 15: DPAK package outline 6/14 DocID17391 Rev 2

Package information Table 6: DPAK mechanical data Dimensions Dim. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b4 5.20 5.40 0.205 0.213 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 D1 4.95 5.10 5.25 0.201 0.195 0.207 E 6.40 6.60 0.252 0.260 E1 4.60 4.70 4.80 0.181 0.185 0.189 e 2.16 2.28 2.40 0.085 0.090 0.094 e1 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L 1.00 1.50 0.039 0.059 (L1) 2.60 2.80 3.00 0.102 0.110 0.118 L2 0.65 0.80 0.95 0.026 0.031 0.037 L4 0.60 1.00 0.024 0.039 R 0.20 0.008 V2 0 8 0 8 DocID17391 Rev 2 7/14

Package information Figure 16: DPAK recommended footprint (dimensions are in mm) STTH4R02-Y 8/14 DocID17391 Rev 2

2.2 SMC package information Figure 17: SMC package outline Package information Table 7: SMC package mechanical data Ref. Dimensions Millimeters Inches Min. Max. Min. Max. A1 1.90 2.45 0.0748 0.0965 A2 0.05 0.20 0.0020 0.0079 b 2.90 3.20 0.1142 0.1260 c 0.15 0.40 0.0059 0.0157 D 5.55 6.25 0.2185 0.2461 E 7.75 8.15 0.3051 0.3209 E1 6.60 7.15 0.2598 0.2815 E2 4.40 4.70 0.1732 0.1850 L 0.75 1.50 0.0295 0.0591 DocID17391 Rev 2 9/14

Package information Figure 18: SMC recommended Footprint STTH4R02-Y 1.54 (0.061) 5.11 (0.201) 1.54 (0.061) 3.14 (0.124) 8.19 (0.323) millimeters (inches) 2.3 SMB package information Figure 19: SMB package outline 10/14 DocID17391 Rev 2

Package information Table 8: SMB package mechanical data Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A1 1.90 2.45 0.0748 0.0965 A2 0.05 0.20 0.0020 0.0079 b 1.95 2.20 0.0768 0.0867 c 0.15 0.40 0.0059 0.0157 D 3.30 3.95 0.1299 0.1556 E 5.10 5.60 0.2008 0.2205 E1 4.05 4.60 0.1594 0.1811 L 0.75 1.50 0.0295 0.0591 Figure 20: SMB recommended Footprint 1.62 0.064 2.60 (0.102) 1.62 0.064 2.18 (0.086) 5.84 (0.230) millimeters (inches) DocID17391 Rev 2 11/14

Ordering information STTH4R02-Y 3 Ordering information Figure 21: Ordering information scheme STTH 4 R 02 xxx Ultrafast switching diode Average forward current 4 = 4 A Model R Repetitive peak reverse voltage 02 = 200 V Package BY-TR = DPAK in tape and reel UY = SMB in tape and reel SY = SMC in tape and reel Table 9: Ordering information Order code Marking Package Weight Base qty. Delivery mode STTH4R02BY-TR STTH4 R02BY DPAK 0.320 g 2500 Tape and reel STTH4R02UY 4R2UY SMB 0.110 g 2500 Tape and reel STTH4R02SY 4R2SY SMC 0.243 g 2500 Tape and reel 12/14 DocID17391 Rev 2

Revision history 4 Revision history Table 10: Document revision history Date Revision Changes 03-Dec-2010 1 First issue 14-Apr-2016 2 Added device in DPAK. Updated features and description in cover page. Updated Table 2: "Absolute ratings (limiting values at 25 C, unless otherwise specified)", Table 3: "Thermal parameters" and Table 5: "Dynamic characteristics". Updated Figure 2: "Forward voltage drop versus forward current (typical values)" and Figure 3: "Forward voltage drop versus forward current (maximum values)". Updated Section 4: "Ordering information". DocID17391 Rev 2 13/14

IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 2016 STMicroelectronics All rights reserved 14/14 DocID17391 Rev 2