Medium Power Transistor (32V, 1A)

Similar documents
Medium Power Transistor ( 32V, 1A)

Dimensions (Unit : mm) 2SB EIAJ : SC-62 (3) Emitter Abbreviated symbol: BA

Low V CE(sat) transistor (strobe flash)

Medium Power Transistor ( 32V, 1A)

Taping code. Reel size (mm) 2SC5824 MPT T ,000 UP

Taping code. Reel size (mm) 2SCR512P MPT T ,000 NB

Taping code. Reel size (mm) 2SCR513P MPT T ,000 NC

New Designs. Not Recommended for 2SB1698 V CEO -30V -1.5A I C. Datasheet. PNP -1.5A -30V Middle Power Transistor. Outline

2SB1275 V CEO -160V I C -1.5A. Datasheet. PNP -1.5A -160V Middle Power Transistor. Outline Parameter Value CPT3. Features

2SA1834 V CEO -20V I C -10A. Datasheet. PNP -10A -20V Middle Power Transistor. Outline. Parameter Value CPT3. Features

QST3 V CEO -30V I C -5A. Datasheet. PNP -5A -30V Middle Power Transistor. Outline

New Designs. Not Recommended for 2SC5001 V CEO I C 20V 10A. Datasheet. NPN 10A 20V Middle Power Transistor. Outline Parameter Value CPT3

Outline CPT3. Base. Taping code. Reel size (mm) 2SC5103 CPT TL ,500 C5103

Outline CPT3. Base. Taping code. Reel size (mm) 2SC5103 CPT TL ,500 C5103

IMH21 V CEO V EBO. 20V 12V 600mA 10k R 1. Datasheet. Outline. Parameter Tr1 and Tr2 SMT6

Photointerrupter, Small type

RGTVX6TS65 650V 80A Field Stop Trench IGBT

Power management (dual transistors)

RGPR30NS40HR 400V 30A Ignition IGBT

Reflective photosensor (photoreflector)

RGCL60TK60 Data Sheet

SCS240AE2HR SiC Schottky Barrier Diode

Reflective photosensor (photoreflector)

Medium power transistor (60V, 0.5A)

RGPZ10BM40FH 430V 20A Ignition IGBT

SCS210AJ SiC Schottky Barrier Diode

Schottky Barrier Diode RB088BM150

RGW00TK65 650V 50A Field Stop Trench IGBT

RGTH80TS65 650V 40A Field Stop Trench IGBT

RGTV00TS65D 650V 50A Field Stop Trench IGBT

Outline TO-220ACP. Inner Circuit. Construction Silicon carbide epitaxial planar type. Type

Schottky Barrier Diode

General purpose transistor (dual transistors)

1.3± ± ± ± ± ROHM : TUMD2 dot (year week factory) + day EX. TDZ5.1B. Taping specifications (Unit : mm)

Switching Diode 1SS355. Datasheet. Application Dimensions (Unit : mm) Land size figure (Unit : mm) High speed switching

Power management (dual transistors)

RGCL80TK60D Data Sheet

RGT00TS65D 650V 50A Field Stop Trench IGBT

RGT30NS65D 650V 15A Field Stop Trench IGBT

Schottky Barrier Diode

TO-247. Inner circuit. Type

RGS00TS65D 650V 50A Field Stop Trench IGBT

Power management (dual transistors)

Transmission type Photointerrupters Eco-Friendly type

Single Digit LED Numeric Display

Outline TO-220AC. Symbol V RM I FSM I FRM P D. Tstg

RGT8BM65D 650V 4A Field Stop Trench IGBT

RGTH60TS65D 650V 30A Field Stop Trench IGBT

RGT00TS65D 650V 50A Field Stop Trench IGBT

Surface mount type photo diode (Topview) RPMD-0100

SCS208AJ SiC Schottky Barrier Diode

Outline. Inner circuit. DC/DC converters Tape width (mm) 10 Type Load Switch Basic ordering unit (pcs) 3,000 Taping code

Zener Diode YFZVFH series

SCS220AM SiC Schottky Barrier Diode

Schottky Barrier Diode RSX501L-20

Infrared light emitting diode, top view type

Infrared light emitting diode, top view type

Phototransistor, top view type

1.25± ±0.05. ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-90/A dot (year week factory) EX. UDZV3.6B. Taping specifications (Unit : mm)

Infrared light emitting diode, side-view type

New Designs. Not Recommended for. General purpose transistor (isolated transistor and diode) QSL11 QSL11. Transistors. Rev.A 1/4

SCT3080KL N-channel SiC power MOSFET

SCT3040KL N-channel SiC power MOSFET

NPN Medium Power Transistor (Switching)

Infrared light emitting diode, top view type

SCT3030AL N-channel SiC power MOSFET

Phototransistor, side view type

S2307 N-channel SiC power MOSFET bare die

SCT3040KL N-channel SiC power MOSFET

Surface Mount High Output Infared LEDs

SCT3060AL N-channel SiC power MOSFET

NPN General Purpose Transistor

Single Digit LED Numeric Display

SCT3060AL N-channel SiC power MOSFET

Outline LPT(L) <TO-263AB> Inner circuit. DC/DC Converter Reel size (mm) 330

Outline TUMT3. DC/DC converters Tape width (mm) 8 Type Basic ordering unit (pcs) 3,000

SCS205KG SiC Schottky Barrier Diode

SCT2H12NZ N-channel SiC power MOSFET

Single Digit LED Numeric Display

SCS220AE2 SiC Schottky Barrier Diode

SCS220AJHR SiC Schottky Barrier Diode

SCT2750NY N-channel SiC power MOSFET

SCS220AE2HR SiC Schottky Barrier Diode

RCX450N20 V DSS 200V 45A 40W. Nch 200V 45A Power MOSFET. Datasheet. Outline. Inner circuit. Features 1) Low on-resistance. 2) Fast switching speed.

Single Digit LED Numeric Display

SCT3030KL N-channel SiC power MOSFET

Type V U D Y M. (unit : mm) Typ. I F Max. V R Min.* 2 Typ. Max.* 2 I F Min. Typ. Max. I F SML-D15VW SML-D15UW

S2301 N-channel SiC power MOSFET bare die

RCD080N25 V DSS 250V 8A 20W. Nch 250V 8A Power MOSFET. Data Sheet. Outline. Inner circuit. Features 1) Low on-resistance. 2) Fast switching speed.

Power Transistor (80V, 1A)

Linear Regulator Application Information

SCS208AJ SiC Schottky Barrier Diode

General purpose(dual transistors)

Outline. Inner circuit. Application Tape width (mm) - Type Switching Power Supply Basic ordering unit (pcs) 360 Taping code

Outline. Inner circuit. Application Tape width (mm) - Type Switching Power Supply Basic ordering unit (pcs) 450 Taping code

SCT3080AL N-channel SiC power MOSFET

Outline TSST8. Inner circuit. (1) Drain (2) Drain (3) Drain (4) Gate. DC/DC converters Tape width (mm) 8 Type Basic ordering unit (pcs) 3,000

S4108 N-channel SiC power MOSFET bare die

Double Digits High Brightness, LED Numeric Display

SCT3030AL N-channel SiC power MOSFET

Transcription:

Medium Power Transistor (3, A) SD664 / SD88 Features ) Low CE(sat) =.(Typ.) (lc / lb = ma / ma) ) Compliments SB3 / SB37 Structure Epitaxial planar type NPN silicon transistor Dimensions (Unit : mm) 4..3 +...... + SD664 + + () 4. +...6 +. () (3).4 +. +..4 +.. +.. +. 3. +.. +...4 +.. SD88 6.8 +..6Max. () () (3)..9 +. 4. + 4.4 +.. +..4.4..4 +. Abbreviated symbol: DA ROHM : MPT3 EIAJ : SC-6 () Base () Collector (3) Emitter ROHM : AT () Emitter () Collector (3) Base Denotes Absolute maximum ratings (Ta= C) Parameter Symbol Limits Unit Collector-base voltage CBO 4 Collector-emitter voltage CEO 3 Emitter-base voltage EBO Collector current IC A (DC) A (Pulse) Collector power dissipation SD664 SD88 PC W 3 Junction temperature Tj C Storage temperature Tstg to + C Pw=ms, duty=/ When mounted on a 4 4.7 mm ceramic board. 3 When it is mounted on the copper clad PCB (.7mm thick) with land size for collector square CM or larger. + + Electrical characteristics (Ta= C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Symbol BCBO BCEO BEBO ICBO IEBO CE(sat) ft Cob Min. 4 3 Typ. Max. Unit Conditions IC=μA. 39.4 μa μa MHz pf IC=mA IE=μA CB= EB=4 CE=3, IC=mA IC/IB=mA / ma CE=, IE= ma, f=mhz CB=, IE=A, f=mhz c 9 ROHM Co., Ltd. All rights reserved. /3 9. - Rev.A

SD664 / SD88 Data Sheet Packaging specifications and Type SD664 SD88 QR QR Package Code Basic ordering unit (pieces) values are classified as follows : Item Q R to 7 8 to 39 T Taping T Electrical characteristics curves Ta= C C C CE=6..4.6.8...4.6 BASE TO EMITTER OLTAGE : BE() 4 3.mA Ta= C 3.mA.mA 3.mA 4.mA 4.mA.mA.mA ma IB=A.4.8..6. COLLECTOR TO EMITTER OLTAGE : CE() DC CURRENT GAIN : CE=3 Ta= C Fig. Grounded emitter propagation characteristics Fig. Grounded emitter output characteristics Fig.3 DC current gain vs. collector current ( Ι ) DC CURRENT GAIN : Ta= C C C CE=3 COLLECTOR SATURATION OLTAGE : CE (sat) () Ta= C.... IC/IB =. COLLECTOR SATURATION OLTAGE : CE(sat) ().... Ta = C 4 C lc/lb = C. Fig.4 DC current gain vs. collector current (ΙΙ) Fig. Collector-emitter saturation voltage vs. collector current ( Ι ) Fig.6 Collector-emitter saturation voltage vs. collector current (ΙΙ) TRANSITION FREQUENCY : ft (MHz) - - - - - - - EMITTER CURRENT : IE(mA) Ta= C CE= COLLECTOR OUTPUT CAPACITANCE : Cob (pf) Ta = C f = MHz IE = A COLLECTOR TO BASE OLTAGE : CB() COLLECTOR CURRENT : IC (A).. IC Max. (Pulse) DC ms PW =ms. Ta = C Single. nonrepetitive. pulse.. COLLECTOR TO EMITTER OLTAGE : CE () Fig.7 Gain bandwidth product vs. emitter current Fig.8 Collector output capacitance vs. collector-base voltage Fig.9 Safe operating area (SD664) c 9 ROHM Co., Ltd. All rights reserved. /3 9. - Rev.A

SD664 / SD88 Data Sheet TRANSIENT THERMAL RESISTANCE : Rth ( C/W).... TIME : t (s) Fig. Transient thermal resistance (SD664) COLLECTOR CURRENT : IC (A)..... IC Max. (Pulse) Pw=ms DC When mounted on a.7mm thick PCB having collector foil dementions cm ms COLLECTOR TO EMITTER OLTAGE : CE () Fig. Safe operating area (SD88) TRANSIENT THERMAL RESISTANCE : Rth ( C/W). TIME : t (s) Ta= C.. Fig. Transient thermal resistance (SD88) c 9 ROHM Co., Ltd. All rights reserved. 3/3 9. - Rev.A

Notice Notes ) ) 3) 4) ) 6) 7) 8) 9) ) ) ) 3) The information contained herein is subject to change without notice. Before you use our Products, please contact our sales representative and verify the latest specifications : Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. The Products are intended for use in general electronic equipment (i.e. A/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. The Products specified in this document are not designed to be radiation tolerant. For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 4) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http:///contact/ 3 ROHM Co., Ltd. All rights reserved. RA

Mouser Electronics Authorized Distributor Click to iew Pricing, Inventory, Delivery & Lifecycle Information: ROHM Semiconductor: SD664TP SD664TQ SD664TR