N-Channel Power MOSFET 800V, 0.3A, 21.6Ω

Similar documents
N-Channel Power MOSFET 100V, 160A, 5.5mΩ

N-Channel Power MOSFET 100V, 81A, 10mΩ

Dual P-Channel MOSFET -60V, -12A, 68mΩ

N-Channel Power MOSFET 600V, 1A, 10Ω

N-Channel Power MOSFET 900V, 4A, 4.0Ω

N-Channel Power MOSFET 40V, 3.9A, 45mΩ

Dual N-Channel MOSFET 30V, 20A, 20mΩ

Dual N-Channel MOSFET 30V, 20A, 20mΩ

N-Channel Power MOSFET 60V, 38A, 17mΩ

N-Channel Power MOSFET 30V, 78A, 3.8mΩ

N-Channel Power MOSFET 60V, 70A, 12mΩ

N-Channel Power MOSFET 150V, 9A, 65mΩ

N-Channel Power MOSFET 700V, 11A, 0.38Ω

P-Channel Power MOSFET -40V, -22A, 15mΩ

N-Channel Power MOSFET 40V, 135A, 3.8mΩ

N-Channel Power MOSFET 150V, 1.4A, 480mΩ

TSM V N-Channel MOSFET

TSM V P-Channel MOSFET

TSM2307CX 30V P-Channel MOSFET

N-Channel Power MOSFET 600V, 18A, 0.19Ω

N-Channel Power MOSFET 600V, 11A, 0.38Ω

Not Recommended. TSM V N-Channel MOSFET. PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) Features. Block Diagram. Application

TSM V P-Channel MOSFET

N-Channel Power MOSFET 30V, 185A, 1.8mΩ

Not Recommended. TSM V P-Channel MOSFET. PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) Features. Block Diagram. Application

TSM6N50 500V N-Channel Power MOSFET

N-Channel Power MOSFET 100V, 46A, 16mΩ

TSM V P-Channel MOSFET

N-Channel Power MOSFET 600V, 18A, 0.19Ω

TSM6866SD 20V Dual N-Channel MOSFET

TSM V N-Channel MOSFET

N- and P-Channel 60V (D-S) Power MOSFET

TSM4936D 30V N-Channel MOSFET

N-Channel Power MOSFET 40V, 121A, 3.3mΩ

TSM V P-Channel MOSFET

N-Channel Power MOSFET 500V, 9A, 0.9Ω

TSM3N90 900V N-Channel Power MOSFET

Preliminary TSM9N50 500V N-Channel Power MOSFET

NPN Silicon Planar High Voltage Transistor

TSM650P03CX 30V P-Channel Power MOSFET

N-Channel Power MOSFET 600V, 0.5A, 10Ω

TSM V P-Channel Power MOSFET

Single-Stage PFC Buck Current Control LED Driver With High Voltage MOSFET Integrated

TSM2N60E 600V, 2A, 4Ω N-Channel Power MOSFET

TSM900N06 60V N-Channel Power MOSFET

TSM V N-Channel MOSFET w/esd Protected

NPN Silicon Planar High Voltage Transistor

TSM1N60L 600V N-Channel Power MOSFET

TSM480P06CI C0G TSM480P06CZ C0G Not Recommended

TSM70N V, 6A, 0.75Ω N-Channel Power MOSFET

Features. Drain SOT23 D. Gate. Source. Part Number Case Packaging DMG3414UQ-7 SOT23 3,000/Tape & Reel DMG3414UQ-13 SOT23 10,000/Tape & Reel

TSM V N-Channel MOSFET

Ultra Low Quiescent Current 5V/150mA Fixed-Voltage Ultra Low LDO

TSM340N06CI C0G TSM340N06CZ C0G Not Recommended

P-Channel 100 V (D-S) MOSFET

TSM V P-Channel MOSFET

N-Channel 60-V (D-S) MOSFET

TSM4946D 60V Dual N-Channel MOSFET

N-Channel 30-V (D-S) MOSFET

Dual P-Channel 2.5-V (G-S) MOSFET

N-Channel 30-V (D-S) MOSFET

P-Channel 40 V (D-S) 175 C MOSFET

N-Channel 100-V (D-S) 175 C MOSFET

N-Channel 100-V (D-S) MOSFET

Phase-Cut Dimmable and Active PFC for LED lighting With High Voltage MOSFET Integrated

3-Terminal 500mA Positive Voltage Regulator

FEATURES. Parameter Symbol Limit Unit Gate-Source Voltage V GS ± 20 V. 85 a Pulsed Drain Current I DM 600

P-Channel 2.5-V (G-S) MOSFET

P-Channel 40 V (D-S), 175 C MOSFET

DMN3032LFDB. Features and Benefits. Product Summary. Description and Applications. Mechanical Data. Ordering Information (Note 4) Marking Information

N-Channel 20 V (D-S) MOSFET

Features. Bottom View. Top View Bottom View

Features. U-DFN (Type F) Pin Out Bottom View

N-Channel 60 V (D-S), 175 C MOSFET, Logic Level

N-Channel 40-V (D-S), 175 C MOSFET

3-Termal 500mA Negative Voltage Regulator

N-Channel 100 V (D-S) MOSFET

Automotive P-Channel 40 V (D-S) 175 C MOSFET

Features SOT363. Top View. Part Number Case Packaging DMN2004DWK-7 SOT363 3,000/Tape & Reel

Dual P-Channel 60-V (D-S) 175 MOSFET

N-Channel 20 V (D-S) MOSFET

Ultra Low Quiescent Current 5V/150mA Fixed-Voltage Ultra Low LDO

N-Channel 30-V (D-S) 175 C MOSFET

SPECIFICATIONS (T J = 25 C, unless otherwise noted)

N-Channel 30-V (D-S) MOSFET

N-Channel 150-V (D-S) MOSFET

Automotive P-Channel 60 V (D-S) 175 C MOSFET

Dual N-Channel 20-V (D-S) MOSFET

Dual P-Channel 40 V (D-S) MOSFET

N-Channel 100-V (D-S) 175 C MOSFET

P-Channel 1.8 V (G-S) MOSFET

Automotive P-Channel 40 V (D-S) 175 C MOSFET

N-Channel 75-V (D-S) 175 C MOSFET

N- and P-Channel 30 V (D-S) MOSFET

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

New Product TO-263. Top View SUB70N03-09BP. Parameter Symbol Limit Unit. Parameter Symbol Limit Unit

P-Channel 20 V (D-S) MOSFET

3-Termal 100mA Positive Voltage Regulator

GP2M020A050H GP2M020A050F

P-Channel 55-V (D-S), 175 C MOSFET

Transcription:

N-Channel Power MOSFET 800V, 0.3A, 21.6Ω FEATURES Advanced planar process 100% avalanche tested Fast switching APPLICATION Power Supply Lighting KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT V DS 800 V R DS(on) (max) 21.6 Ω Q g 5 nc SOT-223 Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T A = 25 C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 800 V Gate-Source Voltage V GS ±30 V Continuous Drain Current I D 0.3 A Pulsed Drain Current (Note 1) I DM 1 A Single Pulse Avalanche Energy (Note 2) E AS 90 mj Avalanche Current, Repetitive or Not-Repetitive (Note 1) I AR 1 A Total Power Dissipation @ T C = 25 C P DTOT 2.1 W Operating Junction Temperature T J 150 C Operating Junction and Storage Temperature Range T J, T STG - 55 to +150 C THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Ambient Thermal Resistance R ӨJA 60 C/W Notes: R ӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while R ӨCA is determined by the user s board design. R ӨJA shown below for single device operation on FR-4 PCB in still air Document Number: DS_P0000037 1 Version: B15

ELECTRICAL SPECIFICATIONS (T A = 25 C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage V GS = 0V, I D = 1mA BV DSS 800 -- -- V Drain-Source On-State Resistance V GS = 10V, I D = 0.15A R DS(ON) -- 18 21.6 Ω Gate Threshold Voltage V DS = V GS, I D = 250µA V GS(TH) 3 -- 5 V Zero Gate Voltage Drain Current V DS = 800V, V GS = 0V I DSS -- -- 25 µa Gate Body Leakage V GS = ±30V, V DS = 0V I GSS -- -- ±10 µa Forward Transconductance V DS = 40V, I D = 0.1A g fs -- 0.36 -- S Diode Forward Voltage I S = 0.2A, V GS = 0V V SD -- -- 1.4 V Dynamic (Note 3) Total Gate Charge Q g -- 5 6 V DS = 640V, I D = 0.3A, Gate-Source Charge Q gs -- 1 -- V GS = 10V Gate-Drain Charge Q gd -- 2 -- Input Capacitance C iss -- 155 200 V DS = 25V, V GS = 0V, Output Capacitance C oss -- 20 26 f = 1.0MHz Reverse Transfer Capacitance C rss -- 2.7 4 (Note 4) Switching Turn-On Delay Time t d(on) -- 10 30 Turn-On Rise Time V GS = 10V, I D = 0.3A, t r -- 20 50 Turn-Off Delay Time V DS = 400V, R G = 25Ω t d(off) -- 16 45 Turn-Off Fall Time t f -- 25 60 Note: 1. Pulse test: pulse width <=300uS, duty cycle <=2% 2. (V DD = 50V, I AS=0.8A, L=170mH, R G=25Ω) 3. For design reference only, not subject to production testing. 4. Switching time is essentially independent of operating temperature. nc pf ns Document Number: DS_P0000037 2 Version: B15

ORDERING INFORMATION PART NO. PACKAGE PACKING TSM1N80CW RPG SOT-223 2,500pcs / 13 Reel Note: 1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC 2. Halogen-free according to IEC 61249-2-21 definition Document Number: DS_P0000037 3 Version: B15

CHARACTERISTICS CURVES (T A = 25 C unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage Document Number: DS_P0000037 4 Version: B15

CHARACTERISTICS CURVES (T A = 25 C unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Maximum Safe Operating Area Normalized Thermal Transient Impedance, Junction-to-Ambient Document Number: DS_P0000037 5 Version: B15

PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) SOT-223 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z) Document Number: DS_P0000037 6 Version: B15

Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_P0000037 7 Version: B15