DX8N valanche ectifier 8 M I x F F. nti-parallel legs Part number DX8N Backside: isolated 3 4 Features / dvantages: pplications: Package: valanche rated Planar passivated chips ery low leakage current ery low forward voltage drop Improved thermal behaviour Diode for main rectification For single and three phase bridge configurations Isolation oltage: 3 ~ Industry standard outline ohs compliant Epoxy meets UL 94- Base plate: Copper internally DCB isolated dvanced power cycling erms Conditions of usage: he data contained in this product data sheet is exclusively intended for technically trained staff. he user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. he specifications of our components may not be considered as an assurance of component characteristics. he information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. 6 IXYS all rights reserved 64a
DX8N ectifier Symbol SM M I I Definition 8 8 5 C J 5 C atings typ. max. 9 F forward voltage drop I 5 C.4 F C C thermal resistance junction to case.3 K/W F max. non-repetitive reverse blocking voltage reverse current I F Conditions I F 5 C J F threshold voltage J 5 C.8 for power loss calculation only r F slope resistance 4 mω thjc thch max. repetitive reverse blocking voltage 5 C J average forward current thermal resistance case to heatsink I F rectangular d.5 P tot total power dissipation 5 C 45 W J J 5 C I FSM max. forward surge current t ms; (5 Hz), sine J 45 C t 8,3 ms; (6 Hz), sine t ms; (5 Hz), sine t 8,3 ms; (6 Hz), sine C J junction capacitance 4 ; f MHz 5 C 53 J C J 5 C I²t value for fusing t ms; (5 Hz), sine 45 C t 8,3 ms; (6 Hz), sine t ms; (5 Hz), sine t 8,3 ms; (6 Hz), sine J 5 C 5 C J J min. 8.55..6.5.6.8.38.3.9 8.3 7.87 Unit µ m K/W ²s ²s ²s ²s J pf P SM max. surge reverse dissipation t p µs J 5 C kw. 6 IXYS all rights reserved 64a
DX8N Package atings Symbol Definition Conditions min. typ. max. Unit I MS MS current per terminal 5 J virtual junction temperature -4 5 C op operation temperature -4 5 C Weight M D M dspp/pp dspb/pb stg storage temperature -4 5 C ISOL mounting torque. terminal torque. creepage distance on surface striking distance through air isolation voltage t second t minute terminal to terminal terminal to backside 5/6 Hz, MS; I ISOL m.5 3. 8.6 6.8 3 5 3.5.5 g Nm Nm mm mm Logo Product Marking Part No. XXXXX Zyyww abcd ssembly Line DateCode ssembly Code Part description D X 8 N Diode valanche ectifier (up to 8) Current ating [] nti-parallel legs everse oltage [] Ordering Standard Ordering Number Marking on Product Delivery Mode Quantity Code No. DX8N DX8N ube 5766 Similar Part Package oltage class DX8N 8 DMX6N 6 DMX6N 6 Equivalent Circuits for Simulation * on die level 5 C I ectifier J max threshold voltage.8 max slope resistance *. mω 6 IXYS all rights reserved 64a
DX8N Outlines 3 4 6 IXYS all rights reserved 64a
DX8N ectifier 8 6 4 I F [] 8 6 4 J 5 C 5 C J 5 C,4,8,,6 F [] Fig. Forward current versus voltage drop per diode I FSM 4 [] 8 6 J 5 C 5 Hz, 8% M J 45 C,,, t [s] 5 I t 4 [ s] 3 J 45 C J 5 C 3 4 5 6 7 8 9 t [ms] Fig. Surge overload current Fig. 3 I t versus time per diode 8 5 P tot 9 [W] 6 dc.5.4.33.7.8 thh :. K/W.4 K/W.6 K/W.8 K/W. K/W. K/W 4 6 I F()M [] 8 dc.5.4.33.7.8 3 4 4 6 8 I F()M 5 5 75 5 5 75 [ ] amb [ C] Fig. 4 Power dissipation vs. direct output current & ambient temperature 5 5 75 5 5 C [ C] Fig. 5 Max. forward current versus case temperature,4,3 Z thjc, [K/W],, t [ms] Fig. 6 ransient thermal impedance junction to case Constants for Z thjc calculation: i thi (K/W) t i (s).5..7. 3.48.7 4.8.6 5.. 6 IXYS all rights reserved 64a