High Voltage, Input Rectifier Diode, 80 A

Similar documents
High Voltage, Input Rectifier Diode, 80 A

High Voltage Input Rectifier Diode, 60 A

High Voltage Input Rectifier Diode, 65 A

Fast Soft Recovery Rectifier Diode, 30 A

High Voltage Input Rectifier Diode, 60 A

High Voltage Surface Mountable Input Rectifier Diode, 8 A

Fast Soft Recovery Rectifier Diode, 40 A

Fast Soft Recovery Rectifier Diode, 30 A

Fast Soft Recovery Rectifier Diode, 60 A

Fast Soft Recovery Rectifier Diode, 60 A

Fast Soft Recovery Rectifier Diode, 80 A

Hyperfast Rectifier, 30 A FRED Pt

Ultrafast Soft Recovery Diode, 30 A FRED Pt Gen 4

Schottky Rectifier, 2 x 15 A

Schottky Rectifier, 2 x 20 A

Schottky Rectifier, 2 x 40 A

High Voltage, Input Rectifier Diode, 20 A

High Performance Schottky Rectifier, 65 A

High Performance Schottky Rectifier, 2 x 40 A

Fast Soft Recovery Rectifier Diode, 60 A

High Performance Schottky Rectifier, 5.5 A

Fast Soft Recovery Rectifier Diode, 20 A

High Performance Schottky Rectifier, 2 x 6 A

Thyristor High Voltage, Phase Control SCR, 30 A

Ultrafast Rectifier, FRED Pt, 2 x 30 A

Hyperfast Rectifier, 30 A FRED Pt

High Voltage Surface Mount Input Rectifier Diode, 20 A

High Performance Schottky Rectifier, 2 x 3.5 A

High Voltage, Input Rectifier Diode, 10 A

Thyristor High Voltage, Phase Control SCR, 40 A

Schottky Rectifier, 5.5 A

Schottky Rectifier, 5.5 A

VS-10ETS08S-M3, VS-10ETS10S-M3, VS-10ETS12S-M3 Series High Voltage Surface Mount Input Rectifier Diode, 10 A

High Performance Schottky Rectifier, 2 x 6 A

HEXFRED Ultrafast Soft Recovery Diode, 16 A

High Voltage Surface Mount Input Rectifier Diode, 25 A

Schottky Rectifier, 2 x 20 A

Thyristor High Voltage, Phase Control SCR, 40 A

HEXFRED Ultrafast Soft Recovery Diode, 30 A

HEXFRED Ultrafast Soft Recovery Diode, 2 x 15 A

Hyperfast Rectifier, 15 A FRED Pt

High Voltage Phase Control Thyristor, 12 A

Thyristor High Voltage, Phase Control SCR, 25 A

Schottky Rectifier, 2 x 30 A

Thyristor High Voltage, Phase Control SCR, 16 A

Schottky Rectifier, 10 A

HEXFRED Ultrafast Soft Recovery Diode, 15 A

Schottky Rectifier, 2 x 30 A

HEXFRED Ultrafast Soft Recovery Diode, 25 A

HEXFRED Ultrafast Soft Recovery Diode, 2 x 8 A

Ultrafast Rectifier, FRED Pt, 2 x 30 A

High Performance Schottky Rectifier, 2 x 20 A

High Performance Schottky Rectifier, 6 A

High Voltage Surface Mount Input Rectifier Diode, 20 A

Schottky Rectifier, 2 x 3.5 A

High Voltage Surface Mount Input Rectifier Diode, 20 A

VS-MBR20...CTPbF Series, VS-MBR20...CT-N3 Series Schottky Rectifier, 2 x 10 A

High Voltage, Input Rectifier Diode, 20 A

Schottky Rectifier, 2 x 15 A

VS-HFA06TB120-M3. HEXFRED, Ultrafast Soft Recovery Diode, 6 A. Vishay Semiconductors. FEATURES

Thyristor High Voltage, Phase Control SCR, 25 A

HEXFRED Ultrafast Soft Recovery Diode, 2 x 8 A

High Performance Schottky Rectifier, 16 A

High Voltage, Input Rectifier Diode, 40 A

Single phase bridge. (Power Modules), 25 A/35 A

High Voltage, Input Rectifier Diode, 10 A

Hyperfast Rectifier, 30 A FRED Pt

Fast Soft Recovery Rectifier Diode, 20 A

HEXFRED, Ultrafast Soft Recovery Diode, 15 A

High Performance Schottky Rectifier, 10 A

Schottky Rectifier, 16 A

Thyristor High Voltage Surface Mount Phase Control SCR, 10 A

Surface Mount Fast Soft Recovery Rectifier Diode, 10 A

Single Phase Bridge Rectifier, 2 A

High Performance Schottky Rectifier, 10 A

HEXFRED Ultrafast Soft Recovery Diode, 2 x 15 A

Hyperfast Rectifier, 15 A FRED Pt

High Voltage Surface Mountable Input Rectifier Diode, 8 A

High Performance Schottky Rectifier, 20 A

High Performance Schottky Rectifier, 16 A

Surface Mount Fast Soft Recovery Rectifier Diode, 10 A

High Performance Schottky Rectifier, 2 x 8 A

High Performance Schottky Rectifier, 2 x 20 A

Standard Recovery Diodes, 400 A

Standard Recovery Diodes (Stud Version), 12 A

Single phase bridge. (Power Modules), 25 A, 35 A

High Performance Schottky Rectifier, 6 A

High Performance Schottky Rectifier, 2 x 20 A

High Performance Schottky Rectifier, 15 A

Power Rectifier Diodes (T-Modules), 2200 V, 20 A

High Performance Schottky Rectifier, 2 x 10 A

Thyristor Surface Mount, Phase Control SCR, 16 A

Ultrafast Rectifier, 8 A FRED Pt

VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series Thyristor High Voltage, Phase Control SCR, 70 A

Input Rectifier Diode, 80 A

Standard Recovery Diodes Generation 2 DO-5 (DO-203AB) (Stud Version), 95 A

Single Phase Bridge Rectifier, 2 A

Standard Recovery Diodes, Generation 2 DO-5 (DO-203AB) (Stud Version), 80 A

High Performance Schottky Rectifier, 2 x 20 A

Input Rectifier Diode, 60 A

Transcription:

VS-8PS..PbF Series, VS-8PS..-M3 Series High Voltage, Input Rectifier Diode, 8 Base cathode + 2 FETURES Very low forward voltage drop 5 max. operating junction temperature Glass passivated pellet chip junction TO-247 2 3 3 node - - node Designed and qualified according to JEDE -JESD 47 Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 vailable PRODUT SUMMRY Package TO-247 I F(V) 8 V R 8 V to 2 V V F at I F.7 V I FSM 5 T J max. 5 Diode variation Single die PPLITIONS Input rectification switches and output rectifiers which are available in identical package outlines DESRIPTION High voltage rectifiers optimized for very low forward voltage drop with moderate leakage. These devices are intended for use in main rectification (single or three phase bridge). MJOR RTINGS ND HRTERISTIS SYMBOL HRTERISTIS VLUES UNITS I F(V) Sinusoidal waveform 8 V RRM Range 8/2 V I FSM 5 V F 8, T J = 25.7 V T J -4 to +5 VOLTGE RTINGS PRT NUMBER V RRM, MXIMUM PEK REVERSE VOLTGE V V RSM, MXIMUM NON-REPETITIVE PEK REVERSE VOLTGE V VS-8PS8PbF, VS-8PS8-M3 8 9 VS-8PS2PbF, VS-8PS2-M3 2 3 I RRM T 5 m.5 BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST ONDITIONS VLUES UNITS Maximum average forward current I F(V) T =, 8 conduction half sine wave 8 Maximum peak one cycle ms sine pulse, rated V RRM applied 45 I FSM non-repetitive surge current ms sine pulse, no voltage reapplied 5 ms sine pulse, rated V RRM applied 5 Maximum I 2 t for fusing I 2 t ms sine pulse, no voltage reapplied 4 2 s Maximum I 2 t for fusing I 2 t t =. ms to ms, no voltage reapplied 4 2 s Revision: -Feb-6 Document Number: 93794 RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?9

VS-8PS..PbF Series, VS-8PS..-M3 Series ELETRIL SPEIFITIONS PRMETER SYMBOL TEST ONDITIONS VLUES UNITS Maximum forward voltage drop V FM 8, T J = 25.7 V Forward slope resistance r t 3.7 m T J = 5 Threshold voltage V F(TO).73 V T J = 25. Maximum reverse leakage current I RM V R = Rated V RRM T J = 5.5 m THERML - MEHNIL SPEIFITIONS PRMETER SYMBOL TEST ONDITIONS VLUES UNITS Maximum junction and storage temperature range T J, T Stg -4 to 5 Maximum thermal resistance, junction to case R thj D operation.35 Maximum thermal resistance, junction to ambient Typical thermal resistance, case to heatsink pproximate weight Mounting torque Marking device R thj 4 R ths Mounting surface, flat, smooth and greased.2 /W 6 g.2 oz. minimum 6 (5) kgf cm maximum 2 () (lbf in) ase style TO-247 (JEDE) 8PS8 8PS2 Maximum llowable ase Temperture ( ) 5 4 3 2 9 8 3 R thj (D) =.35 K/W 6 onduction angle 9 2 8 2 3 4 5 6 7 8 9 Maximum llowable ase Temperature ( ) 5 4 3 2 9 3 2 6 4 9 R thj (D) =.35 K/W 6 2 8 onduction period 8 D 2 4 verage Forward urrent () verage Forward urrent () Fig. - urrent Rating haracteristics Fig. 2 - urrent Rating haracteristics Revision: -Feb-6 2 Document Number: 93794 RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?9

VS-8PS..PbF Series, VS-8PS..-M3 Series Maximum verage Forward Power Loss (W) 2 8 6 4 2 8 2 9 6 3 RMS limit onduction angle T J = 5 Peak Half Sine Wave Forward urrent () 6 4 2 8 6 t any rated load condition and with rated V RRM applied following surge. Initial T J = 5 at 6 Hz.83 s at 5 Hz. s 2 3 4 5 6 7 8 9 verage Forward urrent () Fig. 3 - Forward Power Loss haracteristics 4 Number of Equal mplitude Half ycle urrent Pulse (N) Fig. 5 - Maximum Non-Repetitive Surge urrent Maximum verage Forward Power Loss (W) 6 4 2 8 6 4 2 D 8 2 9 6 3 RMS limit onduction period T J = 5 Peak Half Sine Wave Forward urrent () 6 4 2 8 6 4 Maximum non-repetitive surge current versus pulse train duration. Initial T J = 5 No voltage reapplied Rated V rrm reapplied 2 4 6 8 2 4 2.. verage Forward urrent () Pulse Train Duration (s) Fig. 4 - Forward Power Loss haracteristics Fig. 6 - Maximum Non-Repetitive Surge urrent Instantaneous Forward urrent () T J = 25 T J = 5.5..5 2. 2.5 3. 3.5 4. Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop haracteristics Revision: -Feb-6 3 Document Number: 93794 RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?9

VS-8PS..PbF Series, VS-8PS..-M3 Series Z thj - Transient Thermal Impedance ( /W). Single pulse D =.5 D =.33 D =.25 D =.7 D =.8 Steady state value (D operation)..... Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance Z thj haracteristics ORDERING INFORMTION TBLE Device code VS- 8 P S 2 PbF 2 3 4 5 6 2 3 4 5 - product - urrent rating (8 = 8 ) - ircuit configuration: = single diode, 3 pins - Package: P = TO-247 - Type of silicon: S = standard recovery rectifier 8 = 8 V 6 - Voltage ratings 2 = 2 V 7 - Environmental digit: PbF = lead (Pb)-free and RoHS-compliant -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER T/R MINIMUM ORDER QUNTITY PKGING DESRIPTION VS-8PS8PbF 25 5 ntistatic plastic tubes VS-8PS8-M3 25 5 ntistatic plastic tubes VS-8PS2PbF 25 5 ntistatic plastic tubes VS-8PS2-M3 25 5 ntistatic plastic tubes Dimensions Part marking information SPIE model LINKS TO RELTED DOUMENTS TO-247 modified PbF TO-247 modified -M3 www.vishay.com/doc?95542 www.vishay.com/doc?95226 www.vishay.com/doc?957 www.vishay.com/doc?9555 Revision: -Feb-6 4 Document Number: 93794 RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?9

TO-247-5 mils L/F Outline Dimensions DIMENSIONS in millimeters and inches B (2) R/2 Q (3) E S 2 K M D B M (6) Φ P (Datum B) D2 Φ P 2 x R (2) D D (4) 2 3 D Thermal pad 4 (5) L L See view B (4) E. M D B M 2 x b2 3 x b. M M b4 2 x e View - Plating (b, b3, b5) Base metal DDE E (c) c (b, b2, b4) (4) Section -, D - D, E - E View B SYMBOL MILLIMETERS INHES MILLIMETERS INHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES 4.65 5.3.83.29 D2.5.35.2.53 2.2 2.59.87.2 E 5.29 5.87.62.625 3 2.7.37.46.54 E 3.46 -.53 - b.99.4.39.55 e 5.46 BS.25 BS b.99.35.39.53 K.254. b2.65 2.39.65.94 L 4.2 6..559.634 b3.65 2.34.65.92 L 3.7 4.29.46.69 b4 2.59 3.43.2.35 P 3.56 3.66.4.44 b5 2.59 3.38.2.33 P - 7.39 -.29 c.38.89.5.35 Q 5.3 5.69.29.224 c.38.84.5.33 R 4.52 5.49.78.26 D 9.7 2.7.776.85 3 S 5.5 BS.27 BS D 3.8 -.55-4 Notes () Dimensioning and tolerancing per SME Y4.5M-994 (2) ontour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed.27 mm (.5") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D and E (5) Lead finish uncontrolled in L (6) P to have a maximum draft angle of.5 to the top of the part with a maximum hole diameter of 3.9 mm (.54") (7) Outline conforms to JEDE outline TO-247 with exception of dimension c and Q Revision: 2-pr-7 Document Number: 95542 RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T www.vishay.com/doc?9

Legal Disclaimer Notice Vishay Disclaimer LL PRODUT, PRODUT SPEIFITIONS ND DT RE SUBJET TO HNGE WITHOUT NOTIE TO IMPROVE RELIBILITY, FUNTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. ll operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. ustomers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 27 VISHY INTERTEHNOLOGY, IN. LL RIGHTS RESERVED Revision: 8-Feb-7 Document Number: 9