MJW3281A (NPN) MJW132A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW132A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. Features Designed for W Audio Frequency Gain Complementary: Gain Linearity from ma to 7 A h FE = 45 (Min) @ I C = 8 A Low Harmonic Distortion High Safe Operation Area 1 A/ V @ 1 Second High f T 3 MHz Typical PbFree Packages are Available* MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol Value Unit CollectorEmitter Voltage V CEO 23 Vdc CollectorBase Voltage V CBO 23 Vdc EmitterBase Voltage V EBO 5. Vdc CollectorEmitter Voltage 1.5 V V CEX 23 Vdc Collector Current Continuous Collector Current Peak (Note 1) I C 15 25 Adc Base Current Continuous I B 1.5 Adc Total Power Dissipation @ T C = 25 C Derate Above 25 C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS P D 2 1.43 W W/ C T J, T stg 65 to +1 C Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R JC.625 C/W Thermal Resistance, JunctiontoAmbient R JA 4 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < %. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 23 VOLTS 2 WATTS 1 2 ORDERING INFORMATION Device Package Shipping MJW3281A MJW3281AG 3 TO247 TO247 CASE 34L MARKING DIAGRAM MJWxxxxA AYWWG 1 BASE 3 EMITTER 2 COLLECTOR xxxx = 3281 or 132 A = Assembly Location Y = Year WW = Work Week G = PbFree Package 3 Units/Rail MJW132A TO247 3 Units/Rail MJW132AG TO247 (PbFree) TO247 (PbFree) 3 Units/Rail 3 Units/Rail Semiconductor Components Industries, LLC, 2 March, 2 Rev. 4 1 Publication Order Number: MJW3281A/D
MJW3281A (NPN) MJW132A (PNP) ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (I C = madc, I B = ) Collector Cutoff Current (V CB = 23 Vdc, I E = ) Emitter Cutoff Current (V EB = 5 Vdc, I C = ) V CEO(sus) 23 I CBO I EBO 5 Vdc Adc Adc SECOND BREAKDOWN Second Breakdown Collector with Base Forward Biased (V CE = Vdc, t = 1 s (nonrepetitive) (V CE = Vdc, t = 1 s (nonrepetitive) I S/b 4 1 Adc ON CHARACTERISTICS DC Current Gain (I C = madc, V CE = 5 Vdc) (I C = 1 Adc, V CE = 5 Vdc) (I C = 3 Adc, V CE = 5 Vdc) (I C = 5 Adc, V CE = 5 Vdc) (I C = 7 Adc, V CE = 5 Vdc) (I C = 8 Adc, V CE = 5 Vdc) (I C = 15 Adc, V CE = 5 Vdc) CollectorEmitter Saturation Voltage (I C = Adc, I B = 1 Adc) BaseEmitter On Voltage (I C = 8 Adc, V CE = 5 Vdc) DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product (I C = 1 Adc, V CE = 5 Vdc, ) Output Capacitance (V CB = Vdc, I E =, ) h FE 45 12 125 115 35 2 2 2 2 2 V CE(sat).4 2 V BE(on) 2 f T 3 C ob 6 Vdc Vdc MHz pf 2
MJW3281A (NPN) MJW132A (PNP) TYPICAL CHARACTERISTICS f, T CURRENT BANDWIDTH PRODUCT (MHz) 4 3 2 5 V Figure 1. Typical Current Gain Bandwidth Product V CE = V f, T CURRENT BANDWIDTH PRODUCT (MHz) 6 4 3 2 5 V Figure 2. Typical Current Gain Bandwidth Product V CE = V T J = C 25 C 25 C T J = C V CE = 2 V Figure 3. DC Current Gain, V CE = 2 V V CE = 2 V Figure 4. DC Current Gain, V CE = 2 V T J = C 25 C 25 C T J = C V CE = 5 V Figure 5. DC Current Gain, V CE = 5 V V CE = 5 V Figure 6. DC Current Gain, V CE = 5 V 3
MJW3281A (NPN) MJW132A (PNP) TYPICAL CHARACTERISTICS I C, COLLECTOR CURRENT (A) 45 4 35 3 25 2 15 1.5 A I B = 2 A 5. 5. 15 2 25 1 A.5 A V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Typical Output Characteristics I C, COLLECTOR CURRENT (A) 45 4 35 3 25 2 15 5. 1.5 A I B = 2 A 5. 15 2 25 1 A.5 A V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. Typical Output Characteristics 3. 2.5 SATURATION VOLTAGE (VOLTS) 2.5 2. 1.5.5 I C /I B = V BE(sat) V CE(sat) SATURATION VOLTAGE (VOLTS) 2. 1.5.5 I C /I B = V BE(sat) V CE(sat) Figure 9. Typical Saturation Voltages Figure. Typical Saturation Voltages V BE(on), BASE-EMITTER VOLTAGE (VOLTS) V CE = 5 V (DASHED) V CE = 2 V (SOLID) Figure 11. Typical BaseEmitter Voltage V BE(on), BASE-EMITTER VOLTAGE (VOLTS) V CE = 5 V (DASHED) V CE = 2 V (SOLID) Figure 12. Typical BaseEmitter Voltage 4
MJW3281A (NPN) MJW132A (PNP) 1 Sec msec msec 1 Sec msec msec V CE, COLLECTOR EMITTER (VOLTS) V CE, COLLECTOR EMITTER (VOLTS) Figure 13. Active Region Safe Operating Area There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate I C V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. Figure 14. Active Region Safe Operating Area The data of Figures 13 and 14 is based on T J(pk) = 1 C; T C is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. TYPICAL CHARACTERISTICS C ib C ib C, CAPACITANCE (pf) C ob C, CAPACITANCE (pf) C ob V R, REVERSE VOLTAGE (VOLTS) V R, REVERSE VOLTAGE (VOLTS) Figure 15. MJW132A Typical Capacitance Figure 16. MJW3281A Typical Capacitance 5
MJW3281A (NPN) MJW132A (PNP) PACKAGE DIMENSIONS TO247 CASE 34L2 ISSUE E N A K F 2 PL B U L 1 2 3 P Y W J G D 3 PL C T E H 4 Q.63 (.25) M T B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS INCHES DIM MIN MAX MIN MAX A 2.32 28.8 8.3 B 15.75 16.26.62.64 C 4.7 5.3 85.29 D 1.4.4.55 E 1.9 2.6.75.2 F 1.65 2.13.65.84 G 5.45 BSC.215 BSC H 1. 2.49.59.98 J.4.8.16.31 K 19.81 2.83.78.82 L 5.4 6.2.212.244 N 4.32 5.49 7.216 P --- 4. --- 77 Q 3.55 3.65 4 44 U 6.15 BSC.242 BSC W 2.87 3.12 13 23.25 (.) M Y Q S PowerBase is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8217 USA Phone: 336752175 or 8344386 Toll Free USA/Canada Fax: 336752176 or 83443867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 82829855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 79 29 Japan Customer Focus Center Phone: 813577338 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJW3281A/D