PD -96265B V DS 25 V IRFH5250PbF HEXFET Power MOSFET R DS(on) max (@V GS = 0V).5 mω Q g (typical) 52 nc R G (typical).3 Ω I D (@T mb = 25 C) h A PQFN 5X6 mm Applications OR-ing MOSFET for 2V (typical) Bus in-rush Current Battery Operated DC Motor Inverter MOSFET Features and Benefits Features Benefits Low RDSon (<.5 mω) Lower Conduction Losses Low Thermal Resistance to PCB (<0.8 C/W) Enable better thermal dissipation % Rg tested Increased Reliability Low Profile (<0.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL, Industrial Qualification Increased Reliability Orderable part number Package Type Standard Pack Form Quantity IRFH5250TRPBF PQFN 5mm x 6mm Tape and Reel 4000 IRFH5250TR2PBF PQFN 5mm x 6mm Tape and Reel 400 Note Absolute Maximum Ratings V DS V GS Drain-to-Source Voltage Gate-to-Source Voltage Parameter Max. 25 ± 20 Units V I D @ T A = 25 C I D @ T A = 70 C I D @ T mb = 25 C I D @ T mb = C I DM P D @T A = 25 C P D @T mb = 25 C T J T STG Continuous Drain Current, V GS @ 0V Continuous Drain Current, V GS @ 0V Continuous Drain Current, V GS @ 0V Continuous Drain Current, V GS @ 0V Pulsed Drain Current c Power Dissipation g Power Dissipation g Linear Derating Factor g Operating Junction and Storage Temperature Range 45 3 h h 400 3.6 60 0.029-55 to 50 A W W/ C C Notes through are on page 8 www.irf.com 09/2/2
IRFH5250PbF Static @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 25 V V GS = 0V, I D = 250μA ΔΒV DSS /ΔT J Breakdown Voltage Temp. Coefficient 0.02 V/ C Reference to 25 C, I D = ma R DS(on) Static Drain-to-Source On-Resistance 0.9.5 V GS = 0V, e mω.4.75 V GS = 4.5V, e V GS(th) Gate Threshold Voltage.35.80 2.35 V V DS = V GS, I D = 50μA ΔV GS(th) Gate Threshold Voltage Coefficient -6.3 mv/ C I DSS I GSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage 5.0 Gate-to-Source Reverse Leakage 50 - μa na gfs Forward Transconductance 8 S Q g Total Gate Charge 0 nc Q g Total Gate Charge 52 78 Q gs Pre-Vth Gate-to-Source Charge 3 Q gs2 Post-Vth Gate-to-Source Charge 7.8 Q gd Gate-to-Drain Charge 7 nc Q godr Gate Charge Overdrive 5 Q sw Switch Charge (Q gs2 Q gd ) 25 Q oss Output Charge 36 nc R G Gate Resistance.3 Ω t d(on) Turn-On Delay Time 28 t r Rise Time 46 t d(off) Turn-Off Delay Time 30 ns t f Fall Time 9 C iss Input Capacitance 774 C oss Output Capacitance 758 pf C rss Reverse Transfer Capacitance 828 Avalanche Characteristics Parameter Typ. Max. Units E AS Single Pulse Avalanche Energy d 468 mj I AR Avalanche Current c 50 A Diode Characteristics V DS = 20V, V GS = 0V V DS = 20V, V GS = 0V, T J = 25 C V GS = 20V V GS = -20V V DS = 3V, V GS = 0V, V DS = 3V, V DS = 3V V GS = 4.5V V DS = 6V, V GS = 0V V DD = 3V, V GS = 4.5V R G =.8Ω V GS = 0V V DS = 3V ƒ =.0MHz I S I SM V SD Diode Forward Voltage.0 V t rr Reverse Recovery Time 37 56 ns Q rr Reverse Recovery Charge 68 02 nc t on Parameter Min. Typ. Max. Units Continuous Source Current h (Body Diode) A Pulsed Source Current 400 (Body Diode)Ãc Forward Turn-On Time Time is dominated by parasitic Inductance Conditions MOSFET symbol showing the integral reverse p-n junction diode. T J = 25 C, I S = 50A, V GS = 0V e T J = 25 C, I F = 50A, V DD = 3V di/dt = 200A/μs eã G D S Thermal Resistance Parameter Typ. Max. Units R θj-mb Junction-to-Mounting Base 0.5 0.8 R θjc (Top) Junction-to-Case f 5 C/W R θja Junction-to-Ambient g 35 R θja (<0s) Junction-to-Ambient g 2 2 www.irf.com
C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRFH5250PbF 0 VGS TOP 0V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V BOTTOM 2.7V 0 VGS TOP 0V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V BOTTOM 2.7V 0 2.7V 2.7V 60μs PULSE WIDTH Tj = 25 C 0. 0 V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics 60μs PULSE WIDTH Tj = 50 C 0 0. 0 V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 0.6.4 V GS = 0V 0 0. T J = 50 C T J = 25 C V DS = 5V 60μs PULSE WIDTH.5 2 2.5 3 3.5 4 4.5 5 V GS, Gate-to-Source Voltage (V).2.0 0.8 0.6-60 -40-20 0 20 40 60 80 20 40 60 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 000 00 V GS = 0V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd C iss 4.0 2.0 0.0 8.0 V DS = 20V V DS = 3V C oss 6.0 0 C rss 4.0 2.0 0.0 0 0 20 40 60 80 20 40 V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage www.irf.com 3
V GS(th), I D, Drain Current (A) Gate threshold Voltage (V) I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) IRFH5250PbF 0 00 OPERATION IN THIS AREA LIMITED BY R DS (on) 0 0 T J = 50 C μsec msec T J = 25 C V GS = 0V 0. 0.2 0.4 0.6 0.8.0.2.4.6 V SD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 350 0 3.0 Limited by Package Tc = 25 C Tj = 50 C Single Pulse 0msec DC 0. 0. 0 V DS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 300 Limited By Package 2.5 250 200 2.0 50.5 50 0 25 50 75 25 50 T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case (Bottom) Temperature.0 I D =.0A ID =.0mA ID = 500μA ID = 50μA 0.5-75 -50-25 0 25 50 75 25 50 T J, Temperature ( C ) Fig 0. Threshold Voltage Vs. Temperature D = 0.50 0. 0.20 0.0 0.05 0.0 0.02 0.0 Thermal Response ( Z thjc ) C/W 0.00 SINGLE PULSE ( THERMAL RESPONSE ) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc Tc 0.000 E-006 E-005 0.000 0.00 0.0 0. t, Rectangular Pulse Duration (sec) Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 4 www.irf.com
R DS(on), Drain-to -Source On Resistance (m Ω) Avalanche Current (A) E AS, Single Pulse Avalanche Energy (mj) IRFH5250PbF 4 2000 3 800 600 400 I D TOP 8A 24A BOTTOM 50A 2 T J = 25 C 200 0 800 T J = 25 C 600 400 0 2 4 6 8 0 2 4 6 8 20 V GS, Gate -to -Source Voltage (V) 200 0 25 50 75 25 50 Starting T J, Junction Temperature ( C) Fig 2. On-Resistance vs. Gate Voltage Fig 3. Maximum Avalanche Energy vs. Drain Current 0 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔTj = 25 C and Tstart =25 C (Single Pulse) 0 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ j = 25 C and Tstart = 25 C..0E-06.0E-05.0E-04.0E-03.0E-02.0E-0 tav (sec) Fig 4. Typical Avalanch Current vs. Pulsewidth www.irf.com 5
IRFH5250PbF - D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =0V V DD * R G dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 5. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs V (BR)DSS 5V tp V DS L DRIVER R G 20V tp D.U.T IAS 0.0Ω - V DD A I AS Fig 6a. Unclamped Inductive Test Circuit Fig 6b. Unclamped Inductive Waveforms R G V GS V DS R D D.U.T. - V DD V DS 90% V0V GS Pulse Width µs Duty Factor 0. 0% V GS t d(on) t r t d(off) t f Fig 7a. Switching Time Test Circuit Fig 7b. Switching Time Waveforms Vds Id Vgs 0 K DUT L VCC Vgs(th) Qgs Qgs2 Qgd Qgodr Fig 8a. Gate Charge Test Circuit Fig 8b. Gate Charge Waveform 6 www.irf.com
IRFH5250PbF PQFN 5x6 Outline "B" Package Details For footprint and stencil design recommendations, please refer to application note AN-54 at http://www.irf.com/technical-info/appnotes/an-54.pdf PQFN 5x6 Outline "B" Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN IDENTIFIER XXXX XYWWX XXXXX PART NUMBER ( 4 or 5 digits ) MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 7
IRFH5250PbF PQFN 5x6 Outline "B" Tape and Reel Qualification information Qualification level Moisture Sensitivity Level RoHS compliant Industrial (per JEDEC JES D47F guidelines ) MS L PQFN 5mm x 6mm (per JE DEC J-S T D-020D ) Yes Qualification standards can be found at International Rectifier s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 0.37mH, R G = 25Ω, I AS = 50A. ƒ Pulse width 400μs; duty cycle 2%. R θ is measured at T J of approximately 90 C. When mounted on inch square 2 oz copper pad on.5x.5 in. board of FR-4 material. Calculated continuous current based on maximum allowable junction temperature. Package is limited to A by production test capability Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 0N.Sepulveda blvd, El Segundo, California 90245, USA Tel: (30) 252-705 TAC Fax: (30) 252-7903 Visit us at www.irf.com for sales contact information.09/202 8 www.irf.com