Power MOFET PRODUCT UMMRY (V) 60 R D(on) (Ω) V G = 10 V 0.009 Q g (Max.) (nc) 190 Q gs (nc) 55 Q gd (nc) 90 Configuration ingle TO-27C G D ORDERING INFORMTION Package Lead (Pb)-free npb G D N-Channel MOFET FETURE Dynamic dv/dt Rating Repetitive valanche Rated Ultra Low On- Resistance Very Low Thermal Resistance Isolated Central Mounting Hole 175 C Operating Temperature Fast witching Compliant to RoH Directive 2002/95/EC vailable RoH* COMPLINT DECRIPTION Third generation Power MOFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-27C package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220B devices. The TO-27C is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications. TO-27C IRFP06PbF ihfp06-e3 IRFP06 ihfp06 BOLUTE MXIMUM RTING (T C = 25 C, unless otherwise noted) PRMETER YMBOL LIMIT UNIT Drain-ource Voltage 60 Gate-ource Voltage V G ± 20 V Continuous Drain Current e V G at 10 V T C = 25 C 70 I D T C = 100 C 70 Pulsed Drain Current a I DM 520 Linear Derating Factor 2.0 W/ C ingle Pulse valanche Energy b E 1000 mj Repetitive valanche Current a I R 70 Repetitive valanche Energy a E R 30 mj Maximum Power Dissipation T C = 25 C P D 300 W Peak Diode Recovery dv/dt c dv/dt.5 V/ns Operating Junction and torage Temperature Range T J, T stg - 55 to 175 oldering Recommendations (Peak Temperature) d for 10 s 300 C Mounting Torque 6-32 or M3 screw 10 lbf in 1.1 N m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. V DD = 25 V, starting T J = 25 C, L = 69 μh, R g = 25 Ω, I = 130 (see fig. 12). c. I D 130, di/dt 300 /μs, V DD, T J 175 C. d. 1.6 mm from case. e. Current limited by the package (die current = 130 ). * Pb containing terminations are not RoH compliant, exemptions may apply Document Number: 91201 www.vishay.com 11-07-Rev. C, 1-Mar-11 1
THERML REITNCE RTING PRMETER YMBOL TYP. MX. UNIT Maximum Junction-to-mbient R thj - 0 Case-to-ink, Flat, Greased urface R thc 0.2 - C/W Maximum Junction-to-Case (Drain) R thjc - 0.50 PECIFICTION (T J = 25 C, unless otherwise noted) PRMETER YMBOL TET CONDITION MIN. TYP. MX. UNIT tatic Drain-ource Breakdown Voltage V G = 0 V, I D = 250 μ 60 - - V Temperature Coefficient Δ /T J Reference to 25 C, I D = 1 m - 0.08 - V/ C Gate-ource Threshold Voltage V G(th) = V G, I D = 250 μ 2.0 -.0 V Gate-ource Leakage I G V G = ± 20 V - - ± 100 n = 60 V, V G = 0 V - - 25 Zero Gate Voltage Drain Current I D = 8 V, V G = 0 V, T J = 150 C - - 250 μ Drain-ource On-tate Resistance R D(on) V G = 10 V I D = 78 b - - 0.009 Ω Forward Transconductance g fs = 25 V, I D = 78 b 38 - - Dynamic Input Capacitance C iss V G = 0 V, - 700 - Output Capacitance C oss = 25 V, - 3200 - pf Reverse Transfer Capacitance C rss f = 1.0 MHz, see fig. 5-50 - Total Gate Charge Q g - - 190 Gate-ource Charge Q gs I V G = 10 V D = 130, = 8 V, see fig. 6 and 13 b - - 55 nc Gate-Drain Charge Q gd - - 90 Turn-On Delay Time t d(on) - 21 - Rise Time t r V DD = 30 V, I D = 130, - 190 - Turn-Off Delay Time t d(off) R g =.3 Ω, R D = 0.22 Ω, see fig. 10 b - 110 - ns Fall Time t f - 190 - D Internal Drain Inductance L Between lead, D - 5.0-6 mm (0.25") from package and center of nh G Internal ource Inductance L die contact - 13 - Drain-ource Body Diode Characteristics Continuous ource-drain Diode Current I MOFET symbol - - 70 c D showing the integral reverse Pulsed Diode Forward Current a G I M p - n junction diode - - 520 Body Diode Voltage V D T J = 25 C, I = 130, V G = 0 V b - - 3.0 V Body Diode Reverse Recovery Time t rr - 160 250 T J = 25 C, I F = 130, di/dt = 100 /μs b ns Body Diode Reverse Recovery Charge Q rr - 0.9 1.7 μc Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by L and L D ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. c. Current limited by the package (die current = 130 ). www.vishay.com Document Number: 91201 2 11-07-Rev. C, 1-Mar-11
TYPICL CHRCTERITIC (25 C, unless otherwise noted) Fig. 1 - Typical Output Characteristics, T C = 25 C Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics, T C = 175 C Fig. - Normalized On-Resistance vs. Temperature Document Number: 91201 www.vishay.com 11-07-Rev. C, 1-Mar-11 3
Fig. 5 - Typical Capacitance vs. Drain-to-ource Voltage Fig. 7 - Typical ource-drain Diode Forward Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-ource Voltage Fig. 8 - Maximum afe Operating rea www.vishay.com Document Number: 91201 11-07-Rev. C, 1-Mar-11
R D R G V G D.U.T. - V DD 10 V Pulse width 1 µs Duty factor 0.1 % Fig. 10a - witching Time Test Circuit 90 % 10 % V G t d(on) t r t d(off) t f Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - witching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91201 www.vishay.com 11-07-Rev. C, 1-Mar-11 5
Vary t p to obtain required I R G L D.U.T. I - V DD t p V DD 10 V t p 0.01 Ω I Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum valanche Energy vs. Drain Current Current regulator ame type as D.U.T. 10 V Q G 12 V 0.2 µf 50 kω 0.3 µf Q G Q GD D.U.T. V - D V G V G Charge Fig. 13a - Basic Gate Charge Waveform 3 m Fig. 13b - Gate Charge Test Circuit I G I D Current sampling resistors www.vishay.com Document Number: 91201 6 11-07-Rev. C, 1-Mar-11
Peak Diode Recovery dv/dt Test Circuit D.U.T. - Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer - - R g dv/dt controlled by R g Driver same type as D.U.T. I D controlled by duty factor D D.U.T. - device under test - V DD Driver gate drive P.W. Period D = P.W. Period V G = 10 V a D.U.T. l D waveform Reverse recovery current Body diode forward current di/dt D.U.T. waveform Diode recovery dv/dt V DD Re-applied voltage Inductor current Body diode forward drop Ripple 5 % I D Note a. V G = 5 V for logic level devices Fig. 1 - For N-Channel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for ilicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91201. Document Number: 91201 www.vishay.com 11-07-Rev. C, 1-Mar-11 7
www.vishay.com TO-27C (High Voltage) Package Information 3 B R/2 Q E E/2 2 7 ØP (Datum B) Ø k M D B M ØP1 D2 2 x R (2) D D1 1 2 3 D Thermal pad 5 L1 C 2 x b2 3 x b 0.10 M C M b Lead ssignments 1. Gate 2. Drain 3. ource. Drain 2 x e L ee view B 1 C DDE (b, b2, b) () ection C - C, D - D, E - E MILLIMETER INCHE MILLIMETER INCHE DIM. MIN. MX. MIN. MX. DIM. MIN. MX. MIN. MX..58 5.31 0.180 0.209 D2 0.51 1.30 0.020 0.051 1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 2 1.17 2.9 0.06 0.098 E1 13.72-0.50 - b 0.99 1.0 0.039 0.055 e 5.6 BC 0.215 BC b1 0.99 1.35 0.039 0.053 Ø k 0.25 0.010 b2 1.53 2.39 0.060 0.09 L 1.20 16.25 0.559 0.60 b3 1.65 2.37 0.065 0.093 L1 3.71.29 0.16 0.169 b 2.2 3.3 0.095 0.135 N 7.62 BC 0.300 BC b5 2.59 3.38 0.102 0.133 Ø P 3.51 3.66 0.138 0.1 c 0.38 0.86 0.015 0.03 Ø P1-7.39-0.291 c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.22 D 19.71 20.82 0.776 0.820 R.52 5.9 0.178 0.216 D1 13.08-0.515-5.51 BC 0.217 BC ECN: X13-0103-Rev. D, 01-Jul-13 DWG: 5971 Notes 1. Dimensioning and tolerancing per ME Y1.5M-199. 2. Contour of slot optional. 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body.. Thermal pad contour optional with dimensions D1 and E1. 5. Lead finish uncontrolled in L1. 6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.15"). 7. Outline conforms to JEDEC outline TO-27 with exception of dimension c. 8. Xian and Mingxin actually photo. E View B C C Planting (c) E1 0.01 M D B M View - (b1, b3, b5) Base metal c1 Revision: 01-Jul-13 1 Document Number: 91360 For technical questions, contact: hvm@vishay.com THI DOCUMENT I UBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCT DECRIBED HEREIN ND THI DOCUMENT RE UBJECT TO PECIFIC DICLIMER, ET FORTH T www.vishay.com/doc?91000
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