N-Channel 6 V (D-S), 75 C MOSFET, Logic Level SUD23N6-3L PRODUCT SUMMARY V DS (V) r DS(on) (Ω) I D (A) a.3 at V GS = V 23 6.45 at V GS = 4.5 V 9.5 FEATURES TrenchFET Power MOSFET 75 C Junction Temperature Available RoHS* COMPLIANT TO-252 D G D Top View S Drain Connected to Tab Ordering Information: SUD23N6-3L SUD23N6-3L-E3 (Lead (Pb)-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T C = 25 C, unless otherwise noted Parameter Symbol Limit Unit Gate-Source Voltage V GS ± 2 V Continuous Drain Current (T J = 75 C) b T C = 25 C 23 I D T C = C 6.5 Pulsed Drain Current I DM 5 A Continuous Source Current (Diode Conduction) I S 23 Avalanche Current I AS 2 Single Avalanche Energy (Duty Cycle %) L =. mh E AS 2 mj Maximum Power Dissipation T C = 25 C P D T A = 25 C 3 a W Operating Junction and Storage Temperature Range T J, T stg - 55 to 75 C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient a t sec 8 22 R thja Steady State 4 5 C/W Maximum Junction-to-Case R thjc 3.2 4 Notes: a. Surface Mounted on " x " FR4 board, t sec. * Pb containing terminations are not RoHS compliant, exemptions may apply. S-766-Rev. C, 6-Aug-7
SUD23N6-3L SPECIFICATIONS T J = 25 C, unless otherwise noted Parameter Symbol Test Conditions Min Typ a Max Unit Static Drain-Source Breakdown Voltage V (BR)DSS V GS = V, I D = 25 µa 6 V Gate Threshold Voltage V GS(th) V DS = V GS, I D = 25 µa. 2. 3. Gate-Body Leakage I GSS V DS = V, V GS = ± 2 V ± na Zero Gate Voltage Drain Current I DSS V DS = 6 V, V GS = V, T J = 25 C 5 µa V DS = 6 V, V GS = V V DS = 6 V, V GS = V, T J = 75 C 25 On-State Drain Current b I D(on) V DS = 5 V, V GS = V 5 A Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width 3 µs, duty cycle 2 %. c. Independent of operating temperature. V GS = V, I D = 5 A.25.3 V GS = V, I D = 5 A, T J = 25 C Drain-Source On-State Resistance b.55 r DS(on) Ω V GS = V, I D = 5 A, T J = 75 C.69 V GS = 4.5 V, I D = A.37.45 Forward Transconductance b g fs V DS = 5 V, I D = 5 A 2 S Dynamic a Input Capacitance C iss V GS = V, V DS = 25 V, f = MHz 67 Total Gate Charge c Q g Output Capacitance C oss 4 pf Reverse Transfer Capacitance C rss 6 7 Gate-Source Charge c Q gs V DS = 3 V, V GS = V, I D = 23 A 3 nc Gate-Drain Charge c Q gd 3 Turn-On Delay Time c t d(on) 8 5 Rise Time c t r V DD = 3 V, R L =.3 Ω 5 25 Turn-Off Delay Time c t d(off) I D 23 A, V GEN = V, R g = 2.5 Ω 3 45 ns Fall Time c t f 25 4 Source-Drain Diode Ratings and Characteristics (T C = 25 C) Pulsed Current I SM 5 A Diode Forward Voltage V SD I F = 5 A, V GS = V..5 V Reverse Recovery Time t rr I F = 5 A, di/dt = A/µs 3 6 ns Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 S-766-Rev. C, 6-Aug-7
SUD23N6-3L TYPICAL CHARACTERISTICS 25 C unless noted 5 5 V GS = thru 6 V 5 V 4 4 - Drain Current (A) 3 2 4 V - Drain Current (A) 3 2 I D I D T C = 25 C 3 V 2 4 6 8 V DS - Drain-to-Source Voltage (V) Output Characteristics 25 C - 55 C 2 3 4 5 6 V GS - Gate-to-Source Voltage (V) Transfer Characteristics 32. T C = - 55 C - Transconductance (S) g fs 24 6 8 25 C 25 C - On-Resistance (Ω) rds(on).8.6.4.2 V GS = 4.5 V V GS = V 5 5 2 25 Transconductance. 2 3 4 5 On-Resistance vs. Drain Current C - Capacitance (pf) 8 6 4 2 C oss C iss - Gate-to-Source Voltage (V) V GS 8 6 4 2 V DS = 3 V I D = 23 A C rss 2 3 4 5 6 V DS - Drain-to-Source Voltage (V) Capacitance 2 4 6 8 2 Q g - Total Gate Charge (nc) Gate Charge S-766-Rev. C, 6-Aug-7 3
SUD23N6-3L TYPICAL CHARACTERISTICS 25 C unless noted 2.5 2. V GS = V I D = 5 A r DS ( on) - On-Resistance (Normalized).5..5 - Source Current (A) I S T J = 5 C T J = 25 C. - 5-25 25 5 75 25 5 75 T J - Junction T emperature ( C) On-Resistance vs. Junction Temperature.3.6.9.2.5 V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 4 S-766-Rev. C, 6-Aug-7
SUD23N6-3L THERMAL RATINGS 25 *r DS(on) Limited µs 2 µs 5 5 T C = 25 C Single Pulse ms ms ms dc 25 5 75 25 5 75 T A - Ambient Temperature ( C) Maximum Drain Current vs. Ambient Temperature.. V DS - Drain-to-Source Voltage (V) *V GS > minimum V GS at which r DS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance. Duty Cycle =.5.2..5.2 Single Pulse. - 4-3 - 2 - Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http:///ppg?7245. S-766-Rev. C, 6-Aug-7 5
Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 9 Revision: 8-Jul-8