AOTF9A6L 6V, 2A αmos5 TM Power Transistor General Description Proprietary αmos5 TM technology Low R DS(ON) Optimized switching parameters for better EMI performance Enhanced body diode for robustness and fast reverse recovery Product Summary V DS @ T j,max 7V 8A I DM R DS(ON),max <.9Ω Q g,typ E oss @ 4V 34nC 4.3mJ Applications SMPS with PFC, Flyback and LLC topologies Micro inverter with DC/AC inverter topology % UIS Tested % R g Tested TO22F D G AOTF9A6L G D S S Orderable Part Number AOTF9A6L Package Type TO22F Green Form Tube Minimum Order Quantity Absolute Maximum Ratings T A =25 C unless otherwise noted Parameter DrainSource Voltage GateSource Voltage Symbol V DS V GS Continuous Drain T C =25 C 2* I D Current T C = C 2* A Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G I DM I AR E AR E AS 8 5 2.5 4 A mj mj MOSFET dv/dt ruggedness dv/dt Peak diode recovery dv/dt 2 V/ns Power Dissipation B T C =25 C 32 W P D Derate above 25 C.25 W/ C Junction and Storage Temperature Range T J, T STG 55 to 5 C Maximum lead temperature for soldering purpose, /8" from case for 5 seconds 3 C T L AOTF9A6L 6 ±2 Units V V Thermal Characteristics Parameter Maximum JunctiontoAmbient A,D Maximum JunctiontoCase Symbol R qja R qjc * Drain current limited by maximum junction temperature. AOTF9A6L 65 3.9 Units C/W C/W Rev.2.: July 27 www.aosmd.com Page of 6
Electrical Characteristics (T J =25 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS DrainSource Breakdown Voltage I D =25μA, V GS =V, T J =25 C 6 I D =25μA, V GS =V, T J =5 C 7 V BV DSS Breakdown Voltage Temperature / TJ Coefficient I D =25μA, V GS =V.59 V/ o C I DSS Zero Gate Voltage Drain Current V DS =6V, V GS =V V DS =48V, T J =25 C ma I GSS GateBody leakage current V DS =V, V GS =±2V ± na V GS(th) Gate Threshold Voltage V DS =5V, I D =25mA 3.2 3.8 4.4 V R DS(ON) g FS V SD I S I SM C iss C oss C o(er) C o(tr) C rss R g Q g Q gs Q gd t D(on) t r t D(off) t f t rr I rm Q rr Static DrainSource OnResistance Forward Transconductance Diode Forward Voltage Maximum BodyDiode Continuous Current Maximum BodyDiode Pulsed Current C DYNAMIC PARAMETERS Input Capacitance Output Capacitance Effective output capacitance, energy related H Effective output capacitance, time related I Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate Drain Charge TurnOn DelayTime TurnOn Rise Time TurnOff DelayTime TurnOff Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge V GS =V, I D =7.6A V DS =V, I D =A I S =A,V GS =V V GS =V, V DS =V, f=mhz V GS =V, V DS = to 48V, f=mhz V GS =V, V DS =V, f=mhz f=mhz V GS =V, V DS =48V, I D =A V GS =V, V DS =4V, I D =A, R G =25W Peak Reverse Recovery Current I F =A, di/dt=a/ms, V DS =4V.7.9 Ω 6 S.85.2 V 2 A 8 A 935 pf 55 pf 49 pf 23 pf.25 pf 4.6 Ω 34 nc 2 nc 8.7 nc 49 ns 28 ns 5 ns 7 ns 265 ns 23 A 3.6 mc A. The value of R qja is measured with the device in a still air environment with T A =25 C. B. The power dissipation P D is based on T J(MAX) =5 C, using junctiontocase thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =5 C, Ratings are based on low frequency and duty cycles to keep initial T J =25 C. D. The R qja is the sum of the thermal impedance from junction to case R qjc and case to ambient. E. The static characteristics in Figures to 6 are obtained using <3ms pulses, duty cycle.5% max. F. These curves are based on the junctiontocase thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =5 C. The SOA curve provides a single pulse rating. G. L=6mH, I AS =3.7A, V DD =5V, R G =25Ω, Starting T J =25 C. H. C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from to 8% V (BR)DSS. I. C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V (BR)DSS. APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.: July 27 www.aosmd.com Page 2 of 6
BV DSS (Normalized) I S (A) R DS(ON) (W) Normalized OnResistance I D (A) I D (A) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 35 3 25 V 8V 7V V DS =V 2 5 6.5V 25 C 55 C 5 6V V GS =5.5V 25 C 4 8 2 6 2. 2 4 6 8 Figure : OnRegion Characteristics V GS (Volts) Figure 2: Transfer Characteristics.35 3.3 2.5.25 V GS =V 2 V GS =V I D =7.6A.2.5.5..5.5 5 5 2 25.3 I D (A) Figure 3: OnResistance vs. Drain Current and Gate Voltage E2 5 5 5 2 Temperature ( C) Figure 4: OnResistance vs. Junction Temperature.2 E. E.9 E E2 25 C 25 C.8 E3.7 5 5 5 2 T J ( C) Figure 5: Break Down vs. Junction Temparature E4..2.4.6.8. V SD (Volts) Figure 6: BodyDiode Characteristics Rev.2.: July 27 www.aosmd.com Page 3 of 6
I D (Amps) Eoss (uj) Current rating I D (A) V GS (Volts) Capacitance (pf) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 2 V DS =48V I D =A C iss 9 C oss 6 C rss 3 2 3 4 5 6 Q g (nc) Figure 7: GateCharge Characteristics 2 3 4 5 6 25 Figure 8: Capacitance Characteristics 8 2 6 5 4 E oss 2 5 2 3 4 5 6 Figure 9: Coss stored Energy 25 5 75 25 5 T CASE ( C) Figure : Current Derating (Note F). R DS(ON) limited T J(Max) =5 C T C =25 C DC ms ms ms ms.s. Figure : Maximum Forward Biased Safe Operating Area for AOTF9A6L (Note F) s Rev.2.: July 27 www.aosmd.com Page 4 of 6
Z qjc Normalized Transient Thermal Resistance TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS D=T on /T T J,PK =T C P DM.Z qjc.r qjc R qjc =3.9 C/W In descending order D=.5,.3,.,.5,.2,., single pulse. P DM. Single Pulse T on T. E5.... Pulse Width (s) Figure 2: Normalized Maximum Transient Thermal Impedance for AOTF9A6L (Note F) Rev.2.: July 27 www.aosmd.com Page 5 of 6
Gate Charge Test Circuit & Waveform Qg V Qgs Qgd Ig RL Resistive Switching Test Circuit & Waveforms Charge Rg 9% % td(on) t r t d(off) t f t on t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L E = /2 LI AR 2 AR BV DSS Rg Id Id I AR Diode Recovery Test Circuit & Waveforms Q = Idt rr Ig Isd L Isd I F di/dt I RM t rr Rev.2.: July 27 www.aosmd.com Page 6 of 6