MM5110 Digital-Micro-Switch 100W SPST Product Specification Features: DC to > 6 GHz Frequency Range 100 Watt (50 dbm) Maximum Power Low On-State Insertion Loss < 0.2 db @ 3 GHz -15 db Off-State Isolation @ 3 GHz Ultra Low On-State Resistance < 0.3 Ω Maximum voltage (AC or DC): +200V on RF input < 10 µsec On/Off Switching Time Stable Switch Resistance up to +85ºC Hermetic 7mm x 7mm x 1.8mm CLCC Package Applications: Scientific and Medical Automated Test Systems Wireless Infrastructure Industrial Automation Defense and Aerospace Functional Diagram: Description: The MM-5110 is a high power 100W SPST micro-mechanical switch offered by Menlo Microsystems that has developed a new MetalMEMS fabrication process and applied it to DC and wideband RF/microwave switch applications. This innovative process technology has enabled robust and highly reliable switches capable of withstanding 200 volts at more than 1A using only picoamps of switch current during operation. The switch contacts provide very low on-state resistance and high off-state isolation from DC to 6 GHz with > 1B cold switching cycles at operating temperatures up to 85ºC. An external supply +80 VDC bias source for the switch driver is required. Page 1 Doc.Rev 5110.A 2016-02-25
Operating Characteristics Absolute Maximum Ratings Exceeding the maximum ratings as listed in Table 1 may reduce the reliability of the device or cause permanent damage. Operation of the MEMS switch should be restricted to the limits indicated in Table 2 recommended operating conditions listed below. Electrostatic Discharge (ESD) Safeguards When handling this MEMS switch, observe the same precautions as with any other ESD sensitive devices. Even though this MEMS switch device is protected from ESD damage. Precautions must be taken to avoid exceeding the ratings specified in Table 1.0 below. Susceptibility to Latch-Up This MEMS switch device is generally not susceptible to switch latch-up conditions which can occur in some semiconductor switch devices used in RF/microwave applications. Table 1 Maximum Ratings Parameter Minimum Maximum Unit High Voltage Bias Supply, VBB 80 100 Volt RF/Microwave Input Power (1) 100 / 50 W / dbm Operating Frequency Range (2) DC 6 GHz Switch Rating Voltage 200 V (DC) Switch Rating Current 1A A (DC) Operating Temperature Range -40 +85 C ESD Voltage All Pins (3) 250 Volt Storage Temperature Range -70 +150 ºC Notes: 1) All parameters must be within recommended operating conditions. Maximum DC and RF power can only be applied during the on-state condition. No hot switching. 2) For RF/microwave applications high frequency performance can be improved by external matching. 3) Machine model JEDEC Standard JESD22 A115. Page 2 Doc.Rev 5110.A 2016-02-25
Detailed Electrical Characteristics Table 2 Recommended Operating Conditions Parameter Minimum Typical Maximum Unit Frequency Range DC 6 GHz Power per Channel Continuous 100 / 50 W / dbm Insertion Loss @ 3 GHz 0.16 db Return Loss @ 3 GHz 37 db On-Off Isolation @ 3 GHz 21 db Switch Rated Voltage 200 VDC Third-Order Intercept (IP3) >85 dbm Second-Order Intercept (IP2) >85 dbm Switching Time 10 µsec Full Cycle Frequency 20 KHz Switch Operations 10 9 Cycles Steady State Current 1500 ma Hot Switching Current 10 ma Peak pulse current (< 1 msec) 3000 ma Leakage current @ 200 Volts < 25 pa On-State Resistance 0.3 0.5 mω High Voltage Gate Bias (VBB) 75 80 100 VDC Operating Temperature Range -40 +85 ºC Page 3 Doc.Rev 5110.A 2016-02-25
Metal MEMS 6-Channel SPST Switch Typical Performance Characteristics Figure 1 Insertion Loss to 6GHz Figure 2 isolation to 6GHz Figure 3 Transient Carry Current vs Time (T=25ºC) Figure 4 Leakage Current vs Voltage (Off-State) Page 4 Doc.Rev 5110.A 2016-02-25
Metal MEMS 100W SPST Switch 44-Lead Ceramic LCC Figure 15 Pinout Configuration (Top View) Table 3 Detailed Pin Description Pin # Function Description Pin # Function Description 1-9 GND Package Ground 36 N/C N/C 10 N/C Do Not Connect 37 N/C N/C 11-15 GND Package Ground 38 GND Package Ground 16 RF IN RF Input (Beam) 39 N/C N/C 17 GND Package Ground 40 GND Package Ground 18 N/C N/C 41 RF OUT RF Output (Contact) 19 N/C N/C 42-44 GND Package Ground 20 GND Package Ground 21 Gate Ext Gate Supply 22-35 GND Package Ground Page 5 Doc.Rev 5110.A 2016-02-25