FCD5N-F5 N-Channel SuperFET MOSFET V,. A,. Ω Features V,.A, typ. R ds(on) =mω@v GS =V Ultra Low Gate Charge (Typ. Q g = nc) UIS Capability RoHS Compliant Qualified to AEC Q Applications Automotive On Board Charger Automotive DC/DC Converter for HEV Description G S D-PAK TO-5 (TO-5) D G D S SuperFETTM is ON Semiconductor proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is suitable for various automotive DC/DC power conversion. MOSFET Maximum Ratings T J = 5 C unless otherwise noted. Symbol Parameter Ratings Units V DSS Drain-to-Source Voltage V V GS Gate-to-Source Voltage ±3 V Drain Current - Continuous (V I GS =) (Note ) T C = 5 C. D Pulsed Drain Current T C = 5 C See Figure E AS Single Pulse Avalanche Energy (Note ) 9 mj P D Power Dissipation 5 W Derate Above 5 o C.5 W/ o C T J, T STG Operating and Storage Temperature -55 to + 5 o C R θjc Thermal Resistance, Junction to Case.3 o C/W R θja Maximum Thermal Resistance, Junction to Ambient (Note ) 3 o C/W Notes: : Starting T J = 5 C, L = mh, I AS =.A, V DD = V during inductor charging and V DD = V during time in avalanche. : R θja is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design, while R θja is determined by the board design. The maximum rating presented here is based on mounting on a in pad of oz copper. A Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FCD5N FCD5N-F5 D-PAK(TO-5) 3 mm 5units 5 Semiconductor Components Industries, LLC. August-7, Rev. Publication Order Number: FCD5N-F5/D
Electrical Characteristics T J = 5 C unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics B VDSS Drain-to-Source Breakdown Voltage I D = 5μA, V GS = V - - V I DSS Drain-to-Source Leakage Current On Characteristics Dynamic Characteristics V DS = V, T J = 5 o C - - μa V GS = V T J = 5 o C (Note ) - - μa I GSS Gate-to-Source Leakage Current V GS = ±3V - - ± na V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = 5μA 3. - 5. V R DS(on) Drain to Source On Resistance I D =.A, V GS = V T J = 5 o C -.. Ω T J = 5 o C (Note ) -.5 3. Ω C iss Input Capacitance - 57 - pf V DS = 5V, V GS = V, C oss Output Capacitance - - pf f = MHz C rss Reverse Transfer Capacitance - - pf R g Gate Resistance f = MHz -.9 - Ω Q g(tot) Total Gate Charge V GS = to V V DD = V - nc Q g(th) Threshold Gate Charge V GS = to V I D =.A - - nc Q gs Gate-to-Source Gate Charge - 3. - nc Q gd Gate-to-Drain Miller Charge - 7. - nc Switching Characteristics t on Turn-On Time - - ns t d(on) Turn-On Delay - - ns t r Rise Time V DD = 3V, I D =.A, - 9 - ns t d(off) Turn-Off Delay V GS = V, R GEN = 5Ω - - ns t f Fall Time - 3 - ns t off Turn-Off Time - - 7 ns Drain-Source Diode Characteristics V SD Source-to-Drain Diode Voltage I SD =.A, V GS = V - -.5 V t rr Reverse-Recovery Time V DD = V, I F =.A, - 9 5 ns Q rr Reverse-Recovery Charge di SD /dt = A/μs -.7. μc Note: : The maximum value is specified by design at T J = 5 C. Product is not tested to this condition in production.
Typical Characteristics POWER DISSIPATION MULTIPLIER...... 5 5 75 5 5 T C, CASE TEMPERATURE( o C) Figure. Normalized Power Dissipation vs. Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC. DUTY CYCLE - DESCENDING ORDER D =.5...5.. SINGLE PULSE CURRENT LIMITED BY PACKAGE V GS = V 5 5 75 5 5 75 T C, CASE TEMPERATURE( o C) Figure. Maximum Continuous Drain Current vs. Case Temperature P DM t t NOTES: DUTY FACTOR: D = t /t PEAK T J = P DM x Z θja x R θja + T C FCD5N3F5 N-Channel SuperFET MOSFET. -5 - -3 - - t, RECTANGULAR PULSE DURATION(s) Figure 3. Normalized Maximum Transient Thermal Impedance IDM, PEAK CURRENT (A) V GS = V T C = 5 o C FOR TEMPERATURES ABOVE 5 o C DERATE PEAK CURRENT AS FOLLOWS: I = I 5 - T C 5 SINGLE PULSE -5 - -3 - - t, RECTANGULAR PULSE DURATION(s) Figure. Peak Current Capability 3
Typical Characteristics.. Figure 5. OPERATION IN THIS AREA MAY BE LIMITED BY rds(on) SINGLE PULSE TJ = MAX RATED TC = 5 o C us us ms ms ms VGS, GATE TO SOURCE VOLTAGE(V) Q g, GATE CHARGE(nC) Forward Bias Safe Operating Area Figure. Gate Charge vs. Gate to Source Voltage PULSE DURATION = μs DUTY CYCLE =.5% MAX V DD = V T J = 5 o C T J = 5 o C T J = -55 o C IS, REVERSE DRAIN CURRENT (A) ID =.A V GS = V T J = 5 o C V DD =3V V DD = V T J = 5 o C V DD = 3V 3 5 7 9 V GS, GATE TO SOURCE VOLTAGE (V) Figure 7. Transfer Characteristics Figure....... V SD, BODY DIODE FORWARD VOLTAGE (V) Forward Diode Characteristics μs PULSE WIDTH Tj=5 o C V GS 5V Top V V 7V V 5.5V 5V Bottom 7 5 3 μs PULSE WIDTH Tj=5 o C V GS 5V Top V V 7V V 5.5V 5V Bottom Figure 9. Saturation Characteristics Figure. Saturation Characteristics
Typical Characteristics rds(on), DRAIN TO SOURCE ON-RESISTANCE (Ω) NORMALIZED GATE THRESHOLD VOLTAGE ID =.A PULSE DURATION = μs DUTY CYCLE =.5% MAX 5 3.... T J = 5 o C 5 7 9 V GS, GATE TO SOURCE VOLTAGE (V) Figure. T J = 5 o C R DSON vs. Gate Voltage V GS = V DS I D = 5μA. - - T J, JUNCTION TEMPERATURE( o C) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 3..5..5.5 PULSE DURATION = μs DUTY CYCLE =.5% MAX I D =.A V GS = V. - - T J, JUNCTION TEMPERATURE( o C) Figure. Normalized R DSON vs. Junction Temperature...9 I D = ma. - - T J, JUNCTION TEMPERATURE ( o C) Figure 3. Normalized Gate Threshold Voltage vs. Temperature Figure. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature Figure. CAPACITANCE (pf) f = MHz V GS = V C iss C oss C rss. Figure 5. Capacitance vs. Drain to Source Voltage 5
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