Spec.No.IGBT-SP-162 R1 P1 Silicon N-channel IGBT 33V F version FEATURES Soft switching behavior, low switching loss & low conduction loss : Soft low-injection punch-through Advanced Trench High conductivity IGBT. Low driving power due to low input capacitance with trench MOS gate. Low noise recovery: Ultra soft fast recovery diode. High Current rate Package. Low Rth(j-c) & low stray inductance. RoHS ABSOLUTE MAXIMUM RATINGS (Tc=25 o C) Item Symbol Unit Collector Emitter Voltage VCES V 3,3 Gate Emitter Voltage VGES V 2 Collector Current DC IC 1,8 A 1ms ICRM 3,6 Forward Current DC IF 1,8 A 1ms IFRM 3,6 Junction Temperature Tj o C -5 ~ +15 Storage Temperature Tstg o C -5 ~ +15 Isolation Voltage VISO VRMS 1,2(AC 1 minute) Screw Torque Terminals (M4/M8) - 2/1 (1) N m Mounting (M6) - 6 (2) Notes: (1) Recommended Value 1.8.2/9 1N m ELECTRICAL CHARACTERISTICS (2) Recommended Value 5.5.5N m Item Symbol Unit Min. Typ. Max. Test Conditions Collector Emitter Cut-Off Current ICES ma - -.6 VCE=3,3V, VGE=V, Tj=25 o C - 4 1 VCE=3,3V, VGE=V, Gate Emitter Leakage Current IGES na -5 - +5 VGE= 2V, VCE=V, Tj=25 o C Collector Emitter Saturation Voltage VCEsat V 2.5 2.85 3.5 IC=18A, VGE=15V, Gate Emitter Threshold Voltage VGE(th) V 5.5 6.5 7.5 VCE=1V, IC=18mA, Tj=25 o C Input Capacitance Cies nf - 132 - VCE=1V, VGE=V, f=1khz, Tj=25 o C Internal Gate Resistance rg Ω - 1.3 - VCE=1V, VGE=V, f=1khz, Tj=25 o C Rise Time tr -.3 - VCC=1,8V, Ic=18A Switching Times Turn On Time ton - 1.1 - Ls=1nH s Fall Time tf - 1.8 - RG(on/off)=4.7Ω/5.6Ω (3) Turn Off Time toff - 4. - VGE= 15V, Peak Forward Voltage Drop VF V 2.2 2.6 2.9 IF=18A, VGE=V, Reverse Recovery Time trr s -.7 - VCC=1,8V, IF=18A, Ls =1nH Turn On Loss Eon J/P - 3.7 - VCC=1,8V, Ic=18A, Ls =1nH Turn Off Loss Eoff J/P - 3.3 - Reverse Recovery Loss Err J/P - 2.4 - Short Circuit Pulse Width tsc s 1 - - RG(on/off)=4.7Ω/5.6Ω (3) VGE= 15V, VCC=22V,Ls=13nH RG(on/off)=4.7/56Ω,VGE= 15V, Stray inductance module LSCE nh - 12 - Thermal Impedance IGBT Rth(j-c) - -.75 K/W Junction to case FWD Rth(j-c) - -.125 Contact Thermal Impedance Rth(c-f) K/W -.5 - Case to fin I 2 t value I 2 t ka 2 s 1 - - Tj,start=15 o C, 1ms, VR=V, half-sinewave Notes: (3) RG value is a test condition value for evaluation, not recommended value. Please, determine the suitable RG value by measuring switching behaviors. * Please contact our representatives at order. * For improvement, specifications are subject to change without notice. * For actual application, please confirm this spec sheet is the newest revision. * ELECTRICAL CHARACTERISTIC values according to IEC 6747 2 IEC 6747 9
Forward Curent, IF (A) Spec.No.IGBT-SP-162 R1 P2 STATIC CHARACTERISTICS 36 Tj=25 o C VGE=15V 13V 36 VGE=15V 13V 11V 11V 24 24 18 18 12 9V 12 9V 6 6 7V 2 4 6 Collector to Emitter Voltage, VCE(V) Collector Current vs.collector to Emitter Voltage 7V 2 4 6 Collector to Emitter Voltage, VCE(V) Collector Current vs.collector to Emitter Voltage 36 VGE=15V 13V 36 VGE=V Tj=25 o C 24 11V 24 18 18 12 9V 12 6 6 7V 2 4 6 Collector to Emitter Voltage, VCE(V) Collector Current vs.collector to Emitter Voltage 1 2 3 4 5 Forward Voltage, VF(V) Forward Voltage of free-wheeling diode
Reverse Recovery Loss, Err (J/pulse) Turn-on Loss, Eon (J/pulse) Turn-off Loss, Eoff (J/pulse) Spec.No.IGBT-SP-162 R1 P3 DYNAMIC CHARACTERISTICS 1 1 9 8 Vcc=18V RG(on)=4.7Ω VG=±15V Ls=1nH Inductive Load 9 8 Vcc=18V RG(off)=5.6Ω VG=±15V Ls=1nH Inductive Load 7 7 6 6 5 5 4 4 3 2 y = 2E-7x 2 +.16x +.2825(Tj=15 ) 3 2 y = 6E-8x 2 +.15x +.2995(Tj=15 ) 1 y = 2E-7x 2 +.14x +.2538(Tj=125 ) 1 y = 6E-8x 2 +.14x +.28(Tj=125 ) 6 1,2 1,8 2,4 3, 3,6 Turn-on Loss vs.collector Current 6 1,2 1,8 2,4 3, 3,6 Turn-off Loss vs.collector Current 5 4 Vcc=18V RG(on)=4.7Ω VG=±15V Ls=1nH Inductive Load 3 2 1 y = -2E-7x 2 +.14x +.5581(Tj=15 ) y = -2E-7x 2 +.12x +.4839(Tj=125 ) 6 1,2 1,8 2,4 3, 3,6 Collector Current, IF (-Ic) (A) Recovery Loss vs.collector Current
Spec.No.IGBT-SP-162 R1 P4
Collector Current, IC (A) IR (A) Cies, Coes, Cres (nf) Capacitance vs. Collector to Emitter Voltage 1 Tj=25 o C f=1khz QG-VGE CURVE 15 1 Spec.No.IGBT-SP-162 R1 P5 Conditions:Ls=8nH, VCC=18V, Ls=1nH, VCC=18V, IC=18A,VGE=+/-15V, Tj=25 o C 1 Cies 5 VGE (V) 1 Coes -5 Cres -1 1.1 1. 1. 1. Collector to Emitter Voltage, VCE (V) Capacitance vs. Collector to Emitter Voltage -15-8 -6-4 -2 2 4 6 8 QG ( C) QG-VGE curve Safe Operating Area 4 35 4 35 Vcc 22V, IF 36A, di/dt 11kA/us, -5 o C Tj 15 o C, Ls 1nH, on pulse width 1us 25 25 Pmax=3.6MW 2 IC( to be turned off ) VCE( spike Voltage ) Ic Vce 2 Definition of RBSOA waveform t 15 15 1 5 Vcc 22V, IC 36A, RG 5.6W, VGE=±15V, -5 o C Tj 15 o C, Ls 1nH on pulse width 1 s 1 5 5 1 15 2 25 35 5 1 15 2 25 35 Collector to Emitter Voltage, VCE (V) *Defined as auxiliary terminal VR (V) (Measured at auxiliary terminal) *Defined as auxiliary terminal Reverse bias safe operation area(rbsoa) Reverse recovery safe operation area(rrsoa)
Transient thermal impedance : Zth(j-c) (K/W) TRANSIENT THERMAL IMPEDANCE.1 Maximum Spec.No.IGBT-SP-162 R1 P6.1 FWD IGBT.1.1.1.1.1 1 1 Curve approximation model Time : t(s) Transient Thermal Impedance Curve ( Zth[n]*(1-exp(-t/ th[n]))) n 1 2 3 4 Unit th[n].3.3.1.3 sec Zth[n,IGBT] 1.52E-3 8.82E-4 4.6E-3 5.3E-4 K/W Zth[n,Diode] 2.36E-3 1.69E-3 6.99E-3 1.47E-3 K/W
Spec.No.IGBT-SP-162 R1 P7 OUTLINE DRAWINGS Unit in mm 16 8 Weight : 155 (g) Fig.1 Outline Drawings C C C C G E E E E Fig.2 Circuit diagram
Spec.No.IGBT-SP-162 R1 P8 HITACHI POWER SEMICONDUCTORS Notices 1. The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact Hitachi sales department for the latest version of this data sheets. 2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3. In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users fail-safe precautions or other arrangement. Or consult Hitachi s sales department staff. 4. In no event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user s units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets. 5. In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 6. No license is granted by this data sheets under any patents or other rights of any third party or Hitachi Power Semiconductor Device, Ltd. 7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part, without the expressed written permission of Hitachi Power Semiconductor Device, Ltd. 8. The products (technologies) described in this data sheets are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety not are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. For inquiries relating to the products, please contact nearest overseas representatives that is located Inquiry portion on the top page of a home page. Hitachi power semiconductor home page address http://www.hitachi-power-semiconductor-device.co.jp/en/