AUTOMOTIVE MOSFET PD 94012C Benefits HEXFET Power MOSFET l 200 C Operaing Temperature l Advanced Process Technology D V DSS = 40V l Ultra Low OnResistance l Dynamic dv/dt Rating l Fast Switching R DS(on) = 0.004Ω G l Repetitive Avalanche Allowed up to Tj Max I D = 170A l Automotive Qualified (Q1) S Description Specifically designed for Automotive applications, this HEXFET power MOSFET has a 200 C max operating temperature with a Stripe Planar design that utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this HEXFET power MOSFET are fast switching speed and improved repetitive avalanche rating. The continuing technology leadership of Internationl Rectifier provides 200 C operating temperature in a plastic package. At high ambient temperatures, the can carry up to 20% more current than similar 175 C Tj max devices in the same package outline. This makes this part ideal for existing and emerging underthehood automotive applications such as Electric Power Steering (EPS), Fuel / Water Pump Control and wide variety of other TO220AB applications. Absolute Maximum Ratings Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, @ V 170 I D @ T C = C Continuous Drain Current, @ V 120 A I DM Pulsed Drain Current 680 P D @T C = 25 C Power Dissipation 230 W Linear Derating Factor 1.3 W/ C GatetoSource Voltage ± 20 V E AS Single Pulse Avalanche Energy 670 mj I AR Avalanche Current A E AR Repetitive Avalanche Energy 23 mj dv/dt Peak Diode Recovery dv/dt ƒ 1.9 V/ns T J Operating Junction and 55 to 200 T STG Storage Temperature Range C T LEAD Lead Temperature 175 Soldering Temperature, for seconds 300 (1.6mm from case ) C Mounting torque, 632 or M3 srew lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R θjc JunctiontoCase 0.75 R θcs CasetoSink, Flat, Greased Surface 0.50 C/W R θja JunctiontoAmbient 62 www.irf.com 1 05/08/02
Electrical Characteristics @ T J = 25 C (unless otherwise specified) V (BR)DSS DraintoSource Breakdown Voltage 40 V = 0V, I D = 250µA V (BR)DSS/ T J Breakdown Voltage Temp. Coefficient 0.036 V/ C Reference to 25 C, I D = 1mA R DS(on) Static DraintoSource OnResistance 0.004 Ω = V, I D = A ( th) Gate Threshold Voltage 2.0 4.0 V DS =, I D = 250µA V 1.0 V DS =, I D = 5.0mA, T J = 200 C g fs Forward Transconductance 1 S V DS = 25V, I D = A I 20 V µa DS = 40V, = 0V DSS DraintoSource Leakage Current 250 V DS = 32V, = 0V, T J = 175 C GatetoSource Forward Leakage 200 = 20V I GSS na GatetoSource Reverse Leakage 200 = 20V Q g Total Gate Charge 170 260 I D = A Q gs GatetoSource Charge 42 63 nc V DS = 32V Q gd GatetoDrain ("Miller") Charge 39 59 = V, See Fig. 6 and 13 t d(on) TurnOn Delay Time 16 V DD = 20V t r Rise Time 120 I D = A ns t d(off) TurnOff Delay Time 73 R G = 2.5Ω t f Fall Time 37 = V,See Fig. D Between lead, L D Internal Drain Inductance 4.5 6mm (0.25in.) nh G from package L S Internal Source Inductance 7.5 and center of die contact S C iss Input Capacitance 6950 = 0V C oss Output Capacitance 1660 V DS = 25V C rss Reverse Transfer Capacitance 200 pf ƒ = 1.0MHz, See Fig. 5 C oss Output Capacitance 6250 = 0V, V DS = 1.0V, ƒ = 1.0MHz C oss Output Capacitance 1470 = 0V, V DS = 32V, ƒ = 1.0MHz C oss eff. Effective Output Capacitance 2320 = 0V, V DS = 0V to 32V SourceDrain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 170 (Body Diode) showing the A G I SM Pulsed Source Current integral reverse 680 (Body Diode) pn junction diode. S V SD Diode Forward Voltage 1.3 V T J = 25 C, I S = A, = 0V t rr Reverse Recovery Time 73 1 ns T J = 25 C, I F = A Q rr Reverse RecoveryCharge 200 300 nc di/dt = A/µs t on Forward TurnOn Time Intrinsic turnon time is negligible (turnon is dominated by L S L D ) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) Starting T J = 25 C, L = 0.13mH, = V R G = 25Ω, I AS = A. (See Figure 12) ƒ I SD A, di/dt 150A/µs, V DD V (BR)DSS, T J 200 C Pulse width 400µs; duty cycle 2%. Parameter Min. Typ. Max. Units Conditions C oss eff. is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A At the point of termination of the leads at the PCB, the temp. should be limited to 175 C. The device case temperature is allowed to be higher 2 www.irf.com
I D, DraintoSource Current (A) VGS TOP 15V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V I D, DraintoSource Current (A) VGS TOP 15V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WIDTH T J = 25 C 0.1 1 V DS, DraintoSource Voltage (V) 20µs PULSE WIDTH T J = 200 C 0.1 1 V DS, DraintoSource Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics I D, DraintoSource Current (A) T J = 25 C T J = 200 C V DS= 15V 20µs PULSE WIDTH 4.0 5.0 6.0 7.0 8.0 9.0, GatetoSource Voltage (V) R DS(on), DraintoSource On Resistance (Normalized) 2.5 I D = 170A 2.0 1.5 1.0 0.5 = V 0.0 60 40 20 0 20 40 60 80 120140160180200220 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized OnResistance Vs. Temperature www.irf.com 3
C, Capacitance (pf) 12000 VGS = 0V, f = 1MHz Ciss = Cgs Cgd, C ds SHORTED Crss = Cgd 0 Coss = Cds Cgd 8000 C iss 6000 4000 C oss 2000 C rss 0 1 V DS, DraintoSource Voltage (V), GatetoSource Voltage (V) 20 16 12 8 4 I = D A V DS = 32V V DS = 20V FOR TEST CIRCUIT SEE FIGURE 13 0 0 60 120 180 240 300 Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. DraintoSource Voltage Fig 6. Typical Gate Charge Vs. GatetoSource Voltage 0 OPERATION IN THIS AREA LIMITED BY R DS(on) I SD, Reverse Drain Current (A) T J = 200 C T J = 25 C = 0 V 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V SD,SourcetoDrain Voltage (V) I D, Drain Current (A) us us 1ms TC = 25 C TJ = 200 C Single Pulse ms 1 V DS, DraintoSource Voltage (V) Fig 7. Typical SourceDrain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com
200 LIMITED BY PACKAGE V DS R D I D, Drain Current (A) 150 50 R G Pulse Width 1 µs Duty Factor 0.1 % D.U.T. V DD V DS 90% 0 25 50 75 125 150 175 200 T, Case Temperature ( C C) Fig 9. Maximum Drain Current Vs. Case Temperature % t d(on) t r t d(off) t f 1 Thermal Response (Z thjc ) 0.1 D = 0.50 0.20 0. 0.05 PDM t1 0.02 SINGLE PULSE t2 0.01 (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thjc TC 0.01 0.00001 0.0001 0.001 0.01 0.1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, JunctiontoCase www.irf.com 5
(th) Gate threshold Voltage ( V ) R G Fig 12a. Unclamped Inductive Test Circuit I AS V DS 20V tp L D.U.T IAS 0.01Ω tp Fig 12b. Unclamped Inductive Waveforms Q G 15V V (BR)DSS DRIVER V DD A E AS, Single Pulse Avalanche Energy (mj) 1600 1200 800 400 I D TOP 40A 77A BOTTOM A 0 25 50 75 125 150 175 200 Starting T, Junction Temperature ( J C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current V Q GS Q GD 3.5 V G Charge Fig 13a. Basic Gate Charge Waveform 3.0 2.5 I D = 5.0mA Current Regulator Same Type as D.U.T. 2.0 50KΩ 12V.2µF.3µF D.U.T. V DS 1.5 3mA I G I D Current Sampling Resistors 1.0 75 50 25 0 25 50 75 125 150 175 200 T J, Temperature ( C ) Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage Vs Temperature 6 www.irf.com
Peak Diode Recovery dv/dt Test Circuit D.U.T*.. ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer. R G dv/dt controlled by R G I SD controlled by Duty Factor "D" D.U.T. Device Under Test V DD * Reverse Polarity of D.U.T for PChannel Driver Gate Drive Period P.W. D = P.W. Period [ =V ] *** D.U.T. I SD Waveform Reverse Recovery Current ReApplied Voltage Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt Inductor Curent Body Diode Ripple 5% Forward Drop [ V DD ] [ ] I SD *** = 5.0V for Logic Level and 3V Drive Devices Fig 14. For Nchannel HEXFET power MOSFETs www.irf.com 7
Package Outline TO220AB Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.3).54 (.415).29 (.405) 3.78 (.149) 3.54 (.139) A 4.69 (.18 5 ) 4.20 (.16 5 ) B 1.32 (.052) 1.22 (.048) 15.24 (.600) 14.84 (.584) 4 6.47 (.255) 6. (.240) 1 2 3 1.15 (.045) M IN LEAD ASSIGNMENTS 1 GATE 2 DRAIN 3 SOU RC E 4 DRAIN 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 3X 1.40 (.0 55 ) 1.15 (.0 45 ) 2.54 (.) 3X 0.93 (.037) 0.69 (.027) 0.36 (.014) M B A M 3X 2.92 (.115) 2.64 (.4) 0.55 (.022) 0.46 (.018) 2X NOTES: 1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M, 1 9 82. 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO 2 20 A B. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. Part Marking Information TO220AB EXAMPLE : THIS IS AN IRF W ITH ASSEMBLY LOT CODE 9B1M INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CO DE IRF 9246 9B 1M PART NUMBER DATE CODE (YYWW) YY = YEAR WW = WEEK A Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q1]market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) 25275 TAC Fax: (3) 2527903 Visit us at www.irf.com for sales contact information. 05/02 8 www.irf.com
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/