P-Channel Enhanement Mode MOSFET Features -4V/-74A, R DS(ON) = 8mΩ (max.) @ V GS =-2V R DS(ON) = 9.4mΩ (max.) @ V GS =-1V R DS(ON) = 15mΩ (max.) @ V GS =-4.5V HBM ESD apability level of 8KV typial 1% UIS + R g Tested Reliable and Rugged Lead Free and Green Devies Available (RoHS Compliant) Note : The diode onneted between the gate and soure serves only as protetion against ESD. No gate overvoltage rating is implied. Pin Desription D S G Top View of TO-252-2 D G Appliations Power Management in LCD TV Inverter. Ordering and Marking Information S P-Channel MOSFET SM427PS Assembly Material Handling Code Temperature Range Pakage Code Pakage Code U:TO-252-2 Operating Juntion Temperature Range o C:-55 to 15 C Handling Code TR:Tape & Reel Assembly Material G:Halogen and Lead Free Devie SM427PS U: SM427PS XXXXX XXXXX - Lot Code Note : SINOPOWER lead-free produts ontain molding ompounds/die attah materials and 1% matte tin plate termination finish; whih are fully ompliant with RoHS. SINOPOWER lead-free produts meet or exeed the leadfree requirements of IPC/JEDEC J-STD-2D for MSL lassifiation at lead-free peak reflow temperature. SINOPOWER defines Green to mean lead-free (RoHS ompliant) and halogen free (Br or Cl does not exeed 9ppm by weight in homogeneous material and total of Br and Cl does not exeed 15ppm by weight). SINOPOWER reserves the right to make hanges to improve reliability or manufaturability without notie, and advise ustomers to obtain the latest version of relevant information to verify before plaing orders. 1
Absolute Maximum Ratings Symbol Parameter Rating Unit V DSS Drain-Soure Voltage -4 V GSS Gate-Soure Voltage ±25 a I D a I DP I D I DP I S b I AS Continuous Drain Current (V GS =-1V) T A =25 C -2 T A =7 C -16 3µs Pulsed Drain Current Tested T A =25 C -81 Continuous Drain Current (V GS =-1V) T C =25 C -74 T C =1 C -47 3µs Pulsed Drain Current Tested T C =25 C -298 Diode Continuous Forward Current -37 Avalanhe Current, Single pulse L=.5mH -25 V A E AS b Avalanhe Energy, Single pulse L=.5mH 156 mj T J Maximum Juntion Temperature 15 T STG Storage Temperature Range -55 to 15 P D a P D R θja a R θjc Maximum Power Dissipation Maximum Power Dissipation Thermal Resistane-Juntion to Ambient T A =25 C 6.3 T A =7 C 4. T C =25 C 83 T C =1 C 33 t 1s 2 Steady State 6 Thermal Resistane-Juntion to Case Steady State 1.5 Note a:surfae Mounted on 1in 2 pad area, t 1se. R θja steady state t = 999s. Note b:uis tested and pulse width limited by maximum juntion temperature 15 o C (initial temperature Tj=25 o C). Note :The power dissipation P D is based on T J(MAX) = 15 o C, and it is useful for reduing juntion-to-ase thermal resistane (R θjc) when additional heat sink is used. C W C/W 2
Eletrial Charateristis (T A = 25 C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Stati Charateristis BV DSS Drain-Soure Breakdown Voltage V GS =V, I DS =-25µA -4 - - V I DSS Zero Gate Voltage Drain Current V DS =-32V, V GS =V - - -1 T J =85 C - - -3 V GS(th) Gate Threshold Voltage V DS =V GS, I DS =-25µA -1.5-2 -2.5 V I GSS Gate Leakage Current V GS =±2V, V DS =V - - ±1 µa R DS(ON) d Drain-Soure On-state Resistane Diode Charateristis V SD d V GS =-2V, I DS =-25A - 6.6 8 V GS =-1V, I DS =-25A - 7.5 9.4 V GS =-4.5V, I DS =-15A - 11 15 Diode Forward Voltage I SD =-1A, V GS =V - -.75-1 V t rr Reverse Reovery Time - 23 - ns I SD =-25A, dl SD /dt=1a/µs Q rr Reverse Reovery Charge - 1 - nc Dynami Charateristis e R G Gate Resistane V GS =V,V DS =V,F=1MHz - 3.8 7.6 Ω C iss Input Capaitane V GS =V, - 278 3614 C oss Output Capaitane V DS =-2V, - 426 - C rss Reverse Transfer Capaitane Frequeny=1.MHz - 331 - t d(on) Turn-on Delay Time - 17 31 t V DD =-2V, R L r Turn-on Rise Time =2Ω, - 14 25 I DS =-1A, V GEN =-1V, t d(off) Turn-off Delay Time R G =6Ω - 59 16 t f Turn-off Fall Time - 22 4 Gate Charge Charateristis e Q g Total Gate Charge - 59 83 Q gs Gate-Soure Charge V DS =-2V, V GS =-1V, I DS =-25A - 8 - Q gd Gate-Drain Charge - 16 - Note d:pulse test; pulse width 3µs, duty yle 2%. Note e:guaranteed by design, not subjet to prodution testing. µa mω pf ns nc 3
Typial Operating Charateristis Power Dissipation Drain Current 9 9 75 75 P tot - Power (W) 6 45 3 -I D - Drain Current (A) 6 45 3 15 15 T C =25 o C 2 4 6 8 1 12 14 16 T C =25 o C,V G =-1V 2 4 6 8 1 12 14 16 T j - Juntion Temperature ( C) T j - Juntion Temperature ( C) Safe Operation Area Thermal Transient Impedane 8 3 -I D - Drain Current (A) 1 1µs 1 1ms 1ms 1 DC T C =25 o C.1.1 1 1 1 Rds(on) Limit Normalized Transient Thermal Resistane 1 Duty =.5.2.1.1.5.2.1.1 1E-3 Single Pulse R θjc :1.5 o C/W 1E-4 1E-6 1E-5 1E-4 1E-3.1.1.5 -V DS - Drain - Soure Voltage (V) Square Wave Pulse Duration (se) 4
Typial Operating Charateristis (Cont.) Output Charateristis Drain-Soure On Resistane 18 V GS =-6,-7,-8,-9,-1,-2V 21 -I D - Drain Current (A) 15 12 9 6 3-5V -4.5V -4V -3.5V -3V R DS(ON) - On - Resistane (mω) 18 15 12 9 6 3 V GS =-4.5V V GS =-1V V GS =-2V 1 2 3 4 5 3 6 9 12 15 -V DS - Drain - Soure Voltage (V) -I D - Drain Current (A) Gate-Soure On Resistane Gate Threshold Voltage 36 I DS =-25A 1.6 I DS =-25µA R DS(ON) - On - Resistane (mω) 3 24 18 12 6 Normalized Threshold Voltage (V) 1.4 1.2 1..8.6.4 2 4 6 8 1 12 14 16 18 2.2-5 -25 25 5 75 1 125 15 -V GS - Gate - Soure Voltage (V) T j - Juntion Temperature ( C) 5
Typial Operating Charateristis (Cont.) Drain-Soure On Resistane Soure-Drain Diode Forward 1.8 1.6 V GS = -1V I DS = -25A 1 Normalized On Resistane 1.4 1.2 1..8 -I S - Soure Current (A) 1 1 T j =15 o C T j =25 o C.6 R ON @T j =25 o C: 7.5mΩ.4-5 -25 25 5 75 1 125 15.1..2.4.6.8 1. 1.2 1.4 T j - Juntion Temperature ( C) -V SD - Soure - Drain Voltage (V) Capaitane Gate Charge 45 4 Frequeny=1MHz 1 9 V DS =-2V I DS =-25A C - Capaitane (pf) 35 3 25 2 15 1 Ciss 5 Coss Crss 8 16 24 32 4 -V GS - Gate-Soure Voltage (V) 8 7 6 5 4 3 2 1 1 2 3 4 5 6 -V DS - Drain - Soure Voltage (V) Q G - Gate Charge (nc) 6
Avalanhe Test Ciruit and Waveforms VDS L tav DUT EAS RG VDD VDD tp IL.1W IAS VDS tp VDSX(SUS) Swithing Time Test Ciruit and Waveforms VDS RG VGS DUT RD VDD VGS 1% td(on) tr td(off) tf tp 9% VDS 7
Dislaimer Sinopower Semiondutor, In. (hereinafter Sinopower ) has been making great efforts to development high quality and better performane produts to satisfy all ustomers needs. However, a produt may fail to meet ustomer s expetation or malfuntion for various situations. All information whih is shown in the datasheet is based on Sinopower s researh and development result, therefore, Sinopower shall reserve the right to adjust the ontent and monitor the prodution. In order to unify the quality and performane, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basially follow the rule for eah produt, different proesses may ause slightly different results. The tehnial information speified herein is intended only to show the typial funtions of and examples of appliation iruits for the produts. Sinopower does not grant ustomers expliitly or impliitly, any liense to use or exerise intelletual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of suh tehnial information. The produts are not designed or manufatured to be used with any equipment, devie or system whih requires an extremely high level of reliability, suh as the failure or malfuntion of whih any may result in a diret threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the produts for the above speial purposes. If a produt is intended to use for any suh speial purpose, suh as vehile, military, or medial ontroller relevant appliations, please ontat Sinopower sales representative before purhasing. 8
Pakage Information E b3 A 2 E1 L4 D L3 H D1 b e SEE VIEW A GAUGE PLANE L SEATING PLANE.25 VIEW A A1 S TO-252-2 Y M B MILLIMETERS INCHES O L MIN. MAX. MIN. MAX. A 2.18 2.39.86.94 A1 b3 2 D D1 E.13 b.5.89 E1 e H L L3-4.95 5.46.46.61.46.89 5.33 4.57 6.35 6.73 3.81 9.4.9 2.29 BSC 6.22 6. 6. 1.78 L4-1.2 Note : Follow JEDEC TO-252..2.35.195.215.18.24.18.21 1.41.37.18.236.25.265.15.35.9 BSC.5.35.245.236.41.7.89 2.3.35.8.4 8 8 - - RECOMMENDED LAND PATTERN 6.25 MIN. 6.8 MIN. 6.6 3 MIN. 2.286 1.5 MIN. 4.572 UNIT: mm 9
Carrier Tape & Reel Dimensions OD P P2 P1 A d H A W F E1 OD1 B A T B K B A SECTION A-A SECTION B-B T1 Appliation A H T1 C d D W E1 F TO-252-2 33.±2. 5 MIN. 16.4+2. -. 13.+.5 -.2 1.5 MIN. 2.2 MIN. 16.±.3 1.75±.1 7.5±.5 P P1 P2 D D1 T A B K 4.±.1 8.±.1 2.±.5 1.5+.1 -. 1.5 MIN..6+. -.4 6.8±.2 1.4±.2 2.5±.2 (mm) 1
Taping Diretion Information TO-252-2 USER DIRECTION OF FEED Classifiation Profile 11
Classifiation Reflow Profiles Profile Feature Sn-Pb Euteti Assembly Pb-Free Assembly Preheat & Soak Temperature min (T smin ) Temperature max (T smax ) Time (T smin to T smax ) (t s ) 1 C 15 C 6-12 seonds 15 C 2 C 6-12 seonds Average ramp-up rate (T smax to T P ) 3 C/seond max. 3 C/seond max. Liquidous temperature (T L ) Time at liquidous (t L ) Peak pakage (T p )* body Temperature Time (t P )** within 5 C of the speified lassifiation temperature (T ) 183 C 6-15 seonds 217 C 6-15 seonds See Classifiation Temp in table 1 See Classifiation Temp in table 2 2** seonds 3** seonds Average ramp-down rate (T p to T smax ) 6 C/seond max. 6 C/seond max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. * Tolerane for peak profile Temperature (T p ) is defined as a supplier minimum and a user maximum. ** Tolerane for time at peak profile temperature (t p ) is defined as a supplier minimum and a user maximum. Table 1. SnPb Euteti Proess Classifiation Temperatures (T) Pakage Thikness Volume mm 3 <35 Table 2. Pb-free Proess Classifiation Temperatures (T) Volume mm 3 35 <2.5 mm 235 C 22 C 2.5 mm 22 C 22 C Pakage Thikness Volume mm 3 <35 Volume mm 3 35-2 Volume mm 3 >2 <1.6 mm 26 C 26 C 26 C 1.6 mm 2.5 mm 26 C 25 C 245 C 2.5 mm 25 C 245 C 245 C Reliability Test Program Test item Method Desription SOLDERABILITY JESD-22, B12 5 Se, 245 C HTRB JESD-22, A18 1 Hrs, 8% of VDS max @ Tjmax HTGB JESD-22, A18 1 Hrs, 1% of VGS max @ Tjmax PCT JESD-22, A12 168 Hrs, 1%RH, 2atm, 121 C TCT JESD-22, A14 5 Cyles, -65 C~15 C Customer Servie Sinopower Semiondutor, In. 5F, No. 6, Dusing 1St Rd., Hsinhu Siene Park, Hsinhu, 378, Taiwan TEL: 886-3-5635818 Fax: 886-3-56358 12