Thermally-Enhanced High Power RF GaN on SiC HEMT W, 48 V, 34 36 MHz Description The is a -watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficency, and a themally-enhanced package with earless flange. Peak/Average Ratio, (db) 24 8 4 Single-carrier WCDMA Drive-up V GS(PEAK) = -5.5 V, ƒ = 36 MHz, 3GPP WCDMA signal, PAR = 1 db, 3.84 MHz BW Efficiency PAR @.1% CCDF - -4-6 gtra362fc_g1 32 37 42 47 52 Average Output Power (dbm) 6 4 Package H-37248C-4 Features GaN on SiC HEMT technology Input matched Asymmetrical Doherty design - Main: = 85 W Typ - Peak: = 115 W Typ Typical Pulsed CW performance, 35 MHz, 48 V, combined outputs - Output power at = W - Efficiency = 6% - =.5 db Capable of handling 1:1 VSWR @5 V, 3 W (WCDMA) output power Human Body Model Class 1A, (per ANSI/ESDA/JEDEC JS-1) Low thermal resistance Pb-free and RoHS compliant RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty production test fixture) V DD = 48 V, I DQ = 11 ma, P OUT = 29 W avg, V GS(peak) = V GS @I DQ = 14 ma 2. V, ƒ = 36 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 1 db @.1% CCDF Characteristic Symbol Min Typ Max Unit Linear G ps.5 13.5 db Drain Efficiency hd 38 42 % Adjacent Channel Power Ratio ACPR 29 26 dbc Output PAR @.1% CCDF OPAR 7 7.7 db All published data at T CASE = 25 C unless otherwise indicated ESD: Electrostatic discharge sensitive device observe handling precautions! Rev. 4.1, 19-1-3 46 Silicon Drive Durham, NC 2773 www.wolfspeed.com
2 DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage V GS = 8 V, I D = 1 ma V (BR)DSS 15 V Drain-source Leakage Current V GS = 8 V, V DS = 1 V I DSS 5 ma Gate Threshold Voltage (main) V DS = 1 V, I D = 1.8 ma V GS(th) 3.8 3. 2.3 V (peak) V DS = 1 V, I D = 14.4 ma V GS(th) 3.8 3. 2.3 V Recommended Operating Conditions Parameter Conditions Symbol Min Typ Max Unit Operating Voltage V DD 5 V Gate Quiescent Voltage V DS = 48 V, I D = 11 ma V GS(Q) 3. V Absolute Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage V DSS 5 V Gate-source Voltage V GS 1 to +2 V Gate Current (main) I G 1.8 ma Gate Current (peak) I G 14.4 ma Drain Current (main) I D 4.1 A Drain Current (peak) I D 5.4 A Junction Temperature T J 225 C Storage Temperature Range T STG 65 to +15 C Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated within the operating voltage range (V DD ) specified above. Thermal Chracteristics Parameter Symbol Value Unit Thermal Resistance (main, T CASE = 7 C, 53 W DC) R qjc 2.8 C/W Ordering Information Type and Version Order Code Package Shipping V1 R -V1-R H-37248C-4 Tape & Reel, 5 pcs V1 R2 -V1-R2 H-37248C-4 Tape & Reel, 25 pcs Rev. 4.1, 19-1-3 46 Silicon Drive Durham, NC 2773 www.wolfspeed.com
3 Typical Performance (data taken in test fixture) -1 Single-carrier WCDMA Drive-up V GS(PEAK) = -5.5 V, ƒ = 36 MHz, 3GPP WCDMA signal, PAR = 1 db, BW = 3.84 MHz 6 Single-carrier WCDMA Broadband Performance V GS(PEAK) = -5.5 V, P OUT = 44.6 dbm, 3GPP WCDMA signal, PAR = 1 db 6 ACP Up & Low (dbc) - -3-4 -5-6 ACPU ACPL Efficiency -7 32 37 42 47 52 Average Output Power (dbm) 5 4 3 1 (db) 18 14 Efficiency 5 4 3 1 31 33 35 37 39 gtra362fc_g2 gtra362fc_g3 1 Frequency (MHz) ACPL & ACP Up (dbc) -1-15 - -25-3 -35 Single-carrier WCDMA Broadband Performance V GS(PEAK) = -5.5 V, P OUT = 44.6 dbm, 3GPP WCDMA signal, PAR = 1 db ACPU ACPL -1-15 - -25-3 IRL -4-35 31 33 35 37 39 Frequency (MHz) -5 Return Loss (db) (db) 18 17 15 14 13 CW Performance Small Signal & Input Return Loss V GSPEAK = -5.5 V 33 34 35 36 37 Frequency (MHz) ptra9368pv_g4 gtra362fc_g7 - IRL -4-6 -8-1 - -14 Input Return Loss (db) Rev. 4.1, 19-1-3 46 Silicon Drive Durham, NC 2773 www.wolfspeed.com
4 Typical Performance (cont.) Pulse CW Performance V GS(PEAK) = -5.5 V Pulse CW Performance at various V DD I DQ(MAIN) = 11 ma, V GS(PEAK) = -5.5 V, ƒ = 36 MHz 17 7 17 7 6 6 (db) 15 14 13 34MHz 35MHz 11 36MHz 34MHz Eff 1 35MHz Eff 1 36MHz Eff gtra362fc_g5 33 37 41 45 49 53 57 Output Power (dbm) 5 4 3 (db) 15 14 13 44V 48V 52V 11 44V Eff 1 48V Eff 1 52V Eff gtra362fc_g6 33 37 41 45 49 53 57 Output Power (dbm) 5 4 3 Load Pull Performance Main Side Load Pull Performance Pulsed CW signal: 1 µs, 1% duty cycle, 48 V, I DQ = 11 ma, class AB Freq [MHz] Zs ZL Max Output Power [db] [dbm] hd [%] ZL Max Drain Efficiency [db] [dbm] 34 21+j11 8.9-j7.7 15.5 51.31 135 7. 5.2-j6.6.7 5.1 12 76.5 35 14+j4 9.6-j9.2 15.3 51.23 133 68.6 4.9-j6.9.6 49.6 91 77.7 36 11+j 1.1-j1.4 15.1 51.33 136 68.1 5.5-j8.2.4 5. 1 77.9 Peak Side Load Pull Performance Pulsed CW signal: 1 µs, 1% duty cycle, 48 V, I DQ = 14 ma, class AB Freq [MHz] Zs ZL Max Output Power [db] [dbm] hd [%] ZL Max Drain Efficiency [db] [dbm] 34 3+j8 6.8-j9.8 15.1 52.23 7 61.1 4.4-j7.1.8 51.6 7 69. 35 21+j3.5 8.-j1 14.9 52. 6 61.3 5.4-j6.3.2 5.9 3 68. 36 17-j.8 9.1-j9 14.7 52.4 6.8 5.3-j7.3.2 5.72 118 66. hd [%] hd [%] Rev. 4.1, 19-1-3 46 Silicon Drive Durham, NC 2773 www.wolfspeed.com
G TRA 36 2FC _ C D_ 8-14 - 18 5 Reference Circuit, 34 36 MHz VGS(MAIN) C21 VDD C14 C13 C12 C11 C7 C8 C9 RO435, MIL C6 R14 C16 C15 R11 C1 C2 C4 _OUT_2A RO435, MIL RF_IN C111 U1 R13 C11 C17 C211 C3 C5 RF_OUT C18 C19 R12 C2 _IN_2A C213 VDD C115 C114 C1 C113 C214 C215 C2 VGS(PEAK) Reference circuit assembly diagram (not to scale) Reference Circuit Assembly DUT V1 Test Fixture Part No. LTA/ V1 PCB Rogers 435,.58 mm [. ] thick, 2 oz. copper, ε r = 3.66, ƒ = 34 36 MHz Find Gerber files for this test fixture on the Wolfspeed Web site at www.wolfspeed.com/rf Rev. 4.1, 19-1-3 46 Silicon Drive Durham, NC 2773 www.wolfspeed.com
H-37248-4_pd_1-1- 6 Reference Circuit (cont.) Components Information Component Description Manufacturer P/N Input C11, C16, C11, C111, Capacitor, pf ATC ATC8A1JT25T C1 C12, C113 Capacitor, 1 µf TDK Corporation C4532X7R2A15M23KA C13, C114 Capacitor, 1 V, 1 µf TDK Corporation C575X7S2A16M23KB C14, C115 Capacitor, 1 µf Panasonic Electronic Components EEE-FP1H11AP C15 Capacitor,.7 pf ATC ATC8AR7CT25T C17 Capacitor,.5 pf ATC ATC8AR5CT25T C18 Capacitor, 1.5 pf ATC ATC8A1R5CT25T C19 Capacitor,.9 pf ATC ATC8AR9CT25T R11, R12 Resistor, 5.6 ohms Panasonic Electronic Components ERJ-8RQJ5R6V R13 Resistor, 1 ohms Panasonic Electronic Components ERJ-3GEYJ1V R14 Resistor, 5 ohms Richardson CA5Z4 U1 Hybrid coupler Anaren XC35P-3S Output C1, C2 Capacitor,.7 pf ATC ATC8AR7CT25T C3, C211, C2 Capacitor,.3 pf ATC ATC8AR3CT25T C4, C5, C6, C213 Capacitor, pf ATC ATC8A1JT25T C7, C214 Capacitor, 1 µf TDK Corporation C4532X7R2A15M23KA C8, C9, C215, C2 Capacitor, 1 V, 1 µf TDK Corporation C575X7S2A16M23KB C21 Capacitor, 2 µf Panasonic Electronic Components ECA-2AHG221 Pinout Diagram (top view) Main Peak S D1 D2 Pin D1 D2 G1 G2 S Description Drain Device 1 (Main) Drain Device 2 (Peak) Gate Device 1 (Main) Gate Device 2 (Peak) Source (flange) G1 G2 Rev. 4.1, 19-1-3 46 Silicon Drive Durham, NC 2773 www.wolfspeed.com
C6665-A4-C446-1-27 : h-37248c-4_po_11-2- 7 Package Outline Specifications Package H-37248C-4 45 X 2.72 [.17] (8.89 [.35]) LC (5.8 [.]) 4.83±.51 [.19±.] D1 D2 9.78 [.385] C L (19.43 [.765]) R.51 +.38.13 R. +.15.5 G1 G2 3.81 [.15].7 [.5] 3.78±.25 [.149±.1] 19.81±. [.78±.8] 1.2 [.4] SPH 1.57 [.62] S C L.57 [.81] Diagram Notes unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994 2. Primary dimensions are mm, alternate dimensions are inches 3. All tolerances ±.7 [.5] 4. Pins: D1, D2 drain, G1, G2 gate, S source (flange) 5. Lead thickness:.13 ±.5 [.5 ±.2] 6. Gold plating thickness: 1.14 ±.38 micron [45 ± 15 microinch] Rev. 4.1, 19-1-3 46 Silicon Drive Durham, NC 2773 www.wolfspeed.com
8 Revision History Revision Date Data Sheet Type Page Subjects (major changes since last revision) 1-7-14 Advance All Data Sheet reflects advance specification for product development 2 17-7-21 Advance All Revised Features and Target RF Characteristics Includes Package 3 18-4-3 Preliminary All Data Sheet reflects preliminary specification 4 18-8-15 Production All Data Sheet reflects released product specification 4.1 19-1-3 Production 1 Added ESD rating For more information, please contact: 46 Silicon Drive Durham, North Carolina, USA 2773 www.wolfspeed.com/rf Sales Contact RFSales@wolfspeed.com RF Product Marketing Contact RFMarketing@wolfspeed.com 919.47.78 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Typical parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.. Copyright 18 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed and the Wolfspeed logo are trademarks of Cree, Inc. Rev. 4.1, 19-1-3 www.wolfspeed.com