General escription These N-Channel enhancement mode power field effect transistors are using trench MO technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. BV RON I 30V 6m 20A Features 30V, 20A, R(ON)=6mΩ@VG = 0V Improved dv/dt capability Fast switching Green evice Available OP8 Pin Configuration Applications Notebook Load witch LE applications Hand-Held evice G G Absolute Maximum Ratings Tc=25 unless otherwise noted ymbol Parameter Rating Units V rain-ource Voltage 30 V V G Gate-ource Voltage ±20 V I rain Current Continuous (T C=25 ) 20 A rain Current Continuous (T C=00 ) 2.6 A I M rain Current Pulsed 80 A P Power issipation (T C=25 ) 5.4 W Power issipation erate above 25 0.043 W/ T TG torage Temperature Range -55 to 50 T J Operating Junction Temperature Range -55 to 50 Thermal Characteristics ymbol Parameter Typ. Max. Unit R θja Thermal Resistance Junction to ambient --- 85 /W R θjc Thermal Resistance Junction to Case --- 23 /W
Electrical Characteristics (T J =25, unless otherwise noted) Off Characteristics ymbol Parameter Conditions Min. Typ. Max. Unit BV rain-ource Breakdown Voltage V G=0V, I =250uA 30 --- --- V BV / T J BV Temperature Coefficient Reference to 25, I =ma --- 0.04 --- V/ I V =30V, V G=0V, T J=25 --- --- ua rain-ource Leakage Current V =24V, V G=0V, T J=25 --- --- 0 ua I G Gate-ource Leakage Current V G=±20V, V =0V --- --- ±00 na On Characteristics R (ON) tatic rain-ource On-Resistance V G=0V, I =0A --- 5 6 m V G=4.5V, I =5A --- 6.5 9 m V G(th) Gate Threshold Voltage V G=V, I =250uA.2.6 2.5 V V G(th) V G(th) Temperature Coefficient --- -4 --- mv/ gfs Forward Transconductance V =0V, I =0A --- 8 --- ynamic and switching Characteristics Q g Total Gate Charge 2, 3 ---. 22 Q gs Gate-ource Charge 2, 3 V =5V, V G=4.5V, I =20A ---.85 3.7 nc Q gd Gate-rain Charge 2, 3 --- 6.8 3 T d(on) Turn-On elay Time 2, 3 --- 7.5 5 T r Rise Time 2, 3 V =5V, V G=0V, R G=3.3 --- 4.5 28 T d(off) Turn-Off elay Time 2, 3 I =5A --- 35.2 60 ns T f Fall Time 2, 3 --- 9.6 9 C iss Input Capacitance --- 60 900 C oss Output Capacitance V =25V, V G=0V, F=MHz --- 200 400 pf C rss Reverse Transfer Capacitance --- 80 360 R g Gate resistance V G=0V, V =0V, F=MHz --- 2.5 5 rain-ource iode Characteristics and Maximum Ratings ymbol Parameter Conditions Min. Typ. Max. Unit I Continuous ource Current V G=V =0V, Force Current --- --- 20 A I M Pulsed ource Current --- --- 40 A V iode Forward Voltage V G=0V, I =A, T J=25 --- --- V Note :. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed, pulse width 300us, duty cycle 2%. 3. Essentially independent of operating temperature. 2
I, Continuous rain Current (A) Normalized On Resistance (m ) T C, Case Temperature ( ) Fig. Continuous rain Current vs. T C T J, Junction Temperature ( ) Fig.2 Normalized RON vs. T J Normalized Gate Threshold Voltage (V) T J, Junction Temperature ( ) Fig.3 Normalized V th vs. T J VG, Gate to ource Voltage (V) Qg, Gate Charge (nc) Fig.4 Gate Charge Waveform Normalized Thermal Response (RθJC) I, Continuous rain Current (A) quare Wave Pulse uration (s) Fig.5 Normalized Transient Impedance V, rain to ource Voltage (V) Fig.6 Maximum afe Operation Area 3
V 90% EA= 2 L x I A 2 x BV BV -V BV V 0% I A V G T d(on) T r T d(off) T f T on T off V G Fig.7 witching Time Waveform Fig.8 EA Waveform 4
OP8 PACKAGE INFORMATION ymbol imensions In Millimeters imensions In Inches MAX MIN MAX MIN A.750.350 0.069 0.053 A 0.250 0.00 0.00 0.004 A2.500.300 0.059 0.05 b 0.490 0.350 0.09 0.04 C 0.260 0.90 0.00 0.007 5.00 4.700 0.20 0.85 E 4.00 3.700 0.6 0.46 E 6.200 5.800 0.244 0.228 e.27bc 0.05BC L 0.900 0.400 0.035 0.06 θ 8 0 8 0 5