PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES LOW NOISE: :NF = 1.7 db TYP at f = GHz,, lc = 3 ma :NF = 1.5 db TYP at f = GHz, VCE = 3 V, lc = 3 ma HIGH GAIN: : S1E = 3.5 db TYP at f = GHz,, lc = 3 ma : S1E = 8.5 db TYP at f = GHz, VCE = 3 V, lc = ma 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE DIFFERENT BUILT-IN TRANSISTORS (: NE688, : NE685) DESCRIPTION The has two different built-in transistors for low cost amplifier and oscillator applications up to L and S band. Low noise figures, high gain, high current capability, and medium output give this device high dynamic range and excellent linearity for two-stage amplifiers. This device is also ideally suited for use in a VCO/buffer amplifier application. The thinner package style allows for higher density designs. ELECTRICAL CHARACTERISTICS (TA = 5 C) PART NUMBER PACKAGE OUTLINE TS6 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICBO Collector Cutoff Current at VCB = 5 V, IE = µa.1 IEBO Emitter Cutoff Current at VEB = 1 V, IC = µa.1 hfe DC Current Gain 1 at, IC = 3 ma 145 ft Gain Bandwidth (1) at, IC = 3 ma, f = GHz GHz 4. 4.5 ft Gain Bandwidth () at VCE = 3 V, IC = ma, f = GHz GHz 9 Cre Feedback Capacitance at VCB = 1 V, IE =, f = 1 MHz pf.75.85 S1E Insertion Power Gain (1) at, IC =3 ma, f = GHz db.5 3.5 S1E Insertion Power Gain () at VCE = 3 V, IC = ma, f = GHz db 6.5 NF Noise Figure (1) at, IC = 3 ma, f = GHz db 1.7.5 NF Noise Figure () at VCE = 3 V, IC = 7 ma, f = GHz db 1.5 ICBO Collector Cutoff Current at VCB = 5 V, IE = µa.1 IEBO Emitter Cutoff Current at VEB = 1 V, IC = µa.1 hfe DC Current Gain 1 at VCE = 3 V, IC = ma 75 15 ft Gain Bandwidth at VCE = 3 V, IC = ma, f = GHz GHz 1 Cre Feedback Capacitance at VCB = 3 V, IE =, f = 1 MHz pf.4.7 S1E Insertion Power Gain at VCE = 3 V, IC = ma, f = GHz db 7 8.5 OUTLINE DIMENSIONS (Units in mm).6 ±.1.45 NF Noise Figure at VCE = 3 V, IC = 3 ma, f = GHz db 1.5.5 Notes: 1. Pulsed measurement, pulse width 35 µs, duty cycle %.. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitances meter.. ±. 1.3 PIN CONNECTIONS 1. Collector (). Emitter () 3. Collector () 4. Base () 5. Emitter () 6. Base () Package Outline TS6 (Top View).65 1.1 ±.1 1.5 ±.1 3 4 ~.1.13 ±.5 California Eastern Laboratories 6 5 +.. -.5 (All Leads) Note: Pin 1 is the lower left most pin as the package lettering is oriented and read left to right.
ABSOLUTE MAXIMUM RATINGS 1 (TA = 5 C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V VCEO Collector to Emitter Voltage V VEBO Emitter to Base Voltage V IC Collector Current ma PT Total Power Dissipation mw TJ Junction Temperature C TSTG Storage Temperature C 9 9 6 6 3 15 15 15 15 Note: 1. Operation in excess of any one of these parameters may result in permanent damage.. When operating both devices, the power dissipation for either device should not exceed 1 mw. TYPICAL PERFORMANCE CURVES (TA = 5 C) Total Power Dissipation, PT (mw) 5 5 1..1.5. TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE elements in total Free Air when using 1 element when using elements 5 15 Ambient Temperature, TA ( C) vs. BASE TO EMITTER VOLTAGE.1 1-65 to +15 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 1. Base to Emitter Voltage, VBE (V) Base to Emitter Voltage, VBE (V) Total Power Dissipation, PT (mw) 5 4 3 elements in total Free Air when using 1 element when using elements 5 15 Ambient Temperature, TA ( C) vs. BASE TO EMITTER VOLTAGE VCE = 3 V
TYPICAL PERFORMANCE CURVES (TA = 5 C) DC Current Gain, hfe Gain Bandwidth Product, ft (GHz) vs. COLLECTOR TO EMITTER VOLTAGE 3 µa 18 µa 16 µa 14 µa µa µa 1 3 4 5 6 Collector to Emitter Voltage, VCE (V) DC CURRENT GAIN vs. 8 µa 6 µa 4 µa lb = µa.1. 1 5 5 5 GAIN BANDWIDTH PRODUCT vs. f= GHz DC Current Gain, hfe Collector to Emitter Voltage, VCE (V) DC CURRENT GAIN vs. Collector Current lc (ma) GAIN BANDWIDTH PRODUCT vs. 1 5 5 1 3 5 7 Gain Bandwidth Product, ft (GHz) vs. COLLECTOR TO EMITTER VOLTAGE 6 5 4 3 5 µa 4 µa 3 µa µa lb= µa 1 3 4 5 6 VCE = 3 V 5 V.1. 1 5 5 14 1 8 6 4 f = GHz 5 V 3 V
TYPICAL PERFORMANCE CURVES (TA = 5 C) Insertion Power Gain, S1E (db) Noise Figure, NF (db) Feedback Capacitance, Cre (pf) INSERTION POWER GAIN vs. f= GHz 5 1 3 5 7 NOISE FIGURE vs. 3 1 f = GHz f = 1 GHz 1 3 5 7 FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE f = 1 MHz 1..1 1 5 NOISE FIGURE vs. Collector to Base Voltage, VCB (V) Collector to Base Voltage, VCB (V) Insertion Power Gain, S1E (db) Noise Figure, NF (db) Feedback Capacitance, Cre (pf) 8 6 4 4 3 1.6.4.3. INSERTION POWER GAIN vs. f = GHz 5 5 5 V 3 V VCE = 3 V f = GHz 1 5 5 FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE f = 1 MHz 1 5
TYPICAL PERFORMANCE CURVES (TA = 5 C) Maximum Available Power Gain, MAG (db) Insertion Power Gain, S1E (db) Noise Figure, NF (db) 3 1.5 1 MAXIMUM AVAILABLE GAIN, INSERTION POWER GAIN vs. FREQUENCY IS1EI MAG.1 1 5 Frequency, f (GHz) NOISE FIGURE vs. FREQUENCY lc = 5 ma lc = 5 ma.1 1. Frequency, f (GHz) Maximum Available Power Gain, MAG (db) Insertion Power Gain, S1E (db) 5 15 5 MAXIMUM AVAILABLE GAIN, INSERTION POWER GAIN vs. FREQUENCY MAG IS1EI lc = 5 ma.1. 1 5 Frequency, f (GHz)
TYPICAL SCATTERING PARAMETERS VCE = 3 V, IC = 1 ma, Z = 5 Ω FREQUENCY S11 S1 S1 S..97-14.33.43 166.54.4 8.4.99-7.18..95-8.67.38 154.71.7 7.6.97-13.99.3.91-4.88.36 144.4. 6.11.9-19.89.4.87-56.75.7 134.7.13 54.3.88-5.53.83-7.7.3 15.1.15 47.5.83-9.96.6.79-84.33.16 116.71.16 4.79.78-34.5.7.75-97.41.8 8.43.17 35.6.75-37.36.8.71-9.76 1.99 1.4.17 31.8.7-4.6.9.68-1.9 1.9 93.8.18 6.89.67-43.1 1..66-133. 1.8 87.3.18 3.81.64-45.41 1..6-154.11 1.66 75.63.18 19.11.6-49.75 1.5.61 179.69 1.43 6.93.17 15.48 6-56.3 1.7.61 165.55 1.9 5.57.16 15.97 4-61.7..63 147.73 1.1 41.71.15.9-69.9.5.67 15.3.9 7.4.15 33.5-85.8 3..7 9.5.76 16.8.19 4.71-5.83 VCE = 3 V, IC = 1 ma, Z = 5 Ω FREQUENCY S11 S1 S1 S..98-5.93.43 171.79. 85.64.99-3.75..97-11.8.41 164.4.4 8.86.99-7.53.3.95-17.85.4 157.59.5 76.45.97-11..4.93-3.59.39 151.4.7 7.6.95-14.56.9-9.61.38 144.91.9 68.73.93-17.91.6.87-35.6.37 139.49. 64.78.9-1.19.7.84-41.49.34 133.87.11 61.5.87-3.71.8.81-47.4.3 18.66.1 58.6.85-6.91.9.77-53.49.3 13.1.13 55.3.8-9.5 1..73-59..6 118.6.14 5.86.78-31.5 1..65-71.5.1 8.31.16 48.61.73-35.51 1.5 4-89.53.13 94.49.17 43.8.66-41.1 1.7.47-1.9. 86.1.18 41.68.61-44.56..4 -.45 1.9 74.87.19 39.57 5-49.87.5.33-153.17 1.71 57.6.1 38.43.46-59.91 3..33 177.1 1.54 4.57.3 38.11.38-74.1
TYPICAL SCATTERING PARAMETERS VCE = 3 V, IC = 5 ma, Z = 5 Ω FREQUENCY S11 S1 S1 S..85-6.44.69 155.98.3 73.46.9-19.86..75-51. 9.61 139.4.6 61.17.79-34.91.3.64-75. 8.75 15.5.7 54.17.65-44.33.4 6-96.7 7.76 113.9.8 5.16 5-51..49-115.3 6.8 4.7.9 48.17.48-55.56.6.45-13.31 5.95 97.69. 47.13.4-59.5.7.4-143.59 5.6 91.5.11 46.84.38-61.89.8.41-155.39 4.7 86.6.11 46.85.35-64.36.9.4-165.5 4.5 81.56.1 46.6.3-66.67 1..4-174.7 3.87 77.9.13 46.83.3-68.91 1..41 169.76 3.8 69.66.14 46.94.7-73.69 1.5.43 151.58.66 59.7.16 46.31.3-8.66 1.7.45 14.1.36 53.73.18 45.59. -89.61..49 13.4.1 45.17. 44.1. -1.67.5 4 114.93 1.6 3.99.4 4.36. -15.9 3..6 3.96 1.36.18.7 36.49.1-149.97 VCE = 3 V, IC = 5 ma, Z = 5 Ω FREQUENCY S11 S1 S1 S..89-1.31.46 16.7. 81.6.96-9.77..83-3.63 9.75 149.86.3 74.55.9-17.75.3.75-34.7 9.5 138.8.4 69.69.81-3.4.4.66-44.55 8.6 19.3.6 66.77.74-7.15 7-53.3 7.96.7.6 64.98.68-9.45.6-6.4 7.7 113.73.7 63.78.6-31.18.7.43-66.51 6.64 7.3.8 63.8 8-3.3.8.37-71.94 6.8 1.84.9 6.73 5-3.89.9.33-76.6 5.57 97.19. 6.37-33.36 1..9-81.19 5.15 9.96. 6.3.49-33.76 1..3-9.41 4.45 85.71.1 61.6.45-34.67 1.5.17-6.89 3.7 76.63.14 6.8.4-36.3 1.7.15 -.69 3.33 71..16 58.93.37-38...13-145.48.9 63.46.19 57.5.33-4.74.5.15 176.33.45 51.77.3 5.54.6-48.8 3.. 153.43.1 4.65.7 47.15.17-59.19
TYPICAL SCATTERING PARAMETERS VCE = 3 V, IC = ma, Z = 5 Ω FREQUENCY S11 S1 S1 S..71-39.3 18.58 147.71.3 68.69.83-3.16. 7-73.63 15.31 17.39.5 59.38.63-48.7.3.45 -.58 1.43 11.73.6 56.68.49-57.41.4.39-14.33.8.91.7 56.7.4-63.51.36-141. 8.36 95.89.8 56.57.34-67.57.6.35-154.37 7. 9.47.9 56.86.9-71.19.7.34-165.44 6.16 85.73. 57.18.6-74.31.8.34-175.3 5.44 81.61.11 57.18.4-77.41.9.34 176.63 4.87 77.75.1 57.9. -86 1..35 169.5 4.4 74..13 56.69.1-83.81 1..37 156.83 3.7 67.77.15 55.55.19-91.34 1.5.4 14.1.98 59.4.17 53.3.17-4.99 1.7.4 134.1.63 53.75.19 51.4.16-115.48..46 14..5 46.4. 47.77.16-131.74.5 111.3 1.81 37.71.6 41.7.19-157.66 3. 8 1.61 1.51 4.93.3 36..3-177.86 VCE = 3 V, IC = ma, Z = 5 Ω FREQUENCY S11 S1 S1 S..79-18.18 17.81 156.5. 79..9-14.7..67-33.75 15.65 139.7.3 7.98.8 -.91.3 5-46.3 13.67 15.8.4 69.74.69-7.6.4.44-55.16 11.71 115.64.5 69.7.61-8.96.37-61.11.3 8..6 68.93 6-9.47.6.31-65.9 8.7.3.7 68.67-9.6.7.6-69.64 7.66 97.45.7 68.49.49-9.55.8.3-73. 6.84 93.31.8 68.6.46-9.57.9. -76.64 6.18 89.63.9 68.18.44-9.61 1..18-8.9 5.63 86.38. 67.74.43-9.6 1..14-88.4 4.8 81.1 66.68.4-9.99 1.5. -7.91 3.94 7.79.15 64.56.36-31.58 1.7.8-16.7 3.53 68.1.16 6.66.33-33.11..9-158.61 3.8 61.31.19 59.98.9-35.7.5.13 164.55.57 55.4 54.48. -4.8 3.. 146.66.1 4.11.8 48.3.14-51.14
TYPICAL SCATTERING PARAMETERS VCE = 3 V, IC = ma, Z = 5 Ω FREQUENCY S11 S1 S1 S. -6. 8.6 137.. 67.35.71-41.3..39-3.44 19.94 115.16.4 63.8.48-59.79.3.33-133 14.51 3.51.5 63.34.35-68.39.4.31-148.95 11.6 96..6 64.33.8-74.5.3-16.6 9.15 96.7 65.1.4-78.55.6.3-17.99 7.69 86.7.8 65.6.1-8.95.7.31 178.35 6.63 8.36.9 64.97.19-87.11.8.31 17.8 5.84 78.8.11 64.4.18-91.38.9.3 164.6 5.1 75.55.1 63.46.16-96.7 1..33 158.34 4.7 7.35.13 6.64.16 -.35 1..35 148.1 3.94 66.66.15 6.45.15-1.63 1.5.38 135.96 3.16 58.61.18 56.5.15-17.5 1.7.41 19.6.79 53.7. 53.77.15-138.41..44.4.38 46.54.3 49.64.17-153.87.5 8.77 1.9 35.67.7 4.37.1-174.96 3. 6. 1.61 6.9.31 35.76.6 168.73 BUILT-IN TRANSISTORS 3-pin small mini mold part No. NE6883 NE6853 The UPA836TF features the and in inverted positions. ORDERING INFORMATION PART NUMBER QUANTITY PACKAGING -T1 3 Tape & Reel
BJT NONLINEAR MODEL PARAMETERS (1) UNITS Parameters Parameters IS 3.8e-16 7e-16 MJC.48.34 BF 135.7 9 XCJC 6 NF 1 1 CJS VAF 8 15 VJS.75.75 IKF.6.19 MJS ISE 3.8e-15 7.9e-13 FC.75 NE 1.49.19 TF 11e-1 3e-1 BR 1.3 1 XTF.36 5. NR 1.1 1.8 VTF.65 4.58 VAR 3.5 1.4 ITF.61.1 IKR.6 Infinity PTF 5 ISC 3.5e-16 TR 3e-1 1e-9 NC 1.6 EG 1.11 1.11 RE.4 1.3 XTB RB 6.14 XTI 3 3 RBM 3.5 8.34 KF 1.5e-14 IRB.1.9 AF 1. 1 RC 4. CJE.796e-1.4e-1 VJE.71.81 MJE.38 CJC 49e-1.18e-1 VJC.65.75 (1) Gummel-Poon Model Parameter Units time seconds capacitance farads inductance henries resistance ohms voltage volts current amps MODEL RANGE Frequency:.1 to 3. GHz Bias: VCE = V to 5 V, IC = 1 ma to ma Date: 11/98 Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data.
SCHEMATIC Pin_1 Pin_ Pin_3 LC.5 nh C_C1E1.5 pf LE.5 nh LC.5 nh BUILT-IN TRANSISTORS 3-pin small mini mold part No. NE6883 NE6853 CCE1.19 pf LE1.65 nh C_E1C.5 pf CCB.8 pf CCE CCEPKG.7 pf C_C1B.14 pf.1 pf.15 pf CCB1.1 pf CCBPKG1 LB1 C_E1B.3 pf LE.4 nh.5 nh.95 nh LB nh.7 pf CCBPKG C_B1B.5 pf C_BE.5 pf MODEL RANGE Frequency:.1 to 3. GHz Bias: VCE = V to 5 V, IC = 1 ma to ma Date: 11/98 ORDERING INFORMATION Pin_6 Pin_5 Pin_4 PART NUMBER QUANTITY PACKAGING -T1 3 Tape & Reel LB LE.5 nh LB.5 nh The UPA836TF features the and in inverted positions. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES Headquarters 459 Patrick Henry Drive Santa Clara, CA 9554-1817 (48) 988-35 Telex 34-6393 FAX (48) 988-79 4-Hour Fax-On-Demand: 8-39-33 (U.S. and Canada only) Internet: http://www.cel.com DATA SUBJECT TO CHANGE WITHOUT NOTICE PRINTED IN USA ON RECYCLED PAPER -/99