Scheme I Sample. : Second : Basic. Electronics : 70. Marks. Time: 3 Hrs. 2] b) State any. e) State any. Figure Definition.

Similar documents
UNIT I PN JUNCTION DEVICES


F.Y. Diploma : Sem. II [DE/EJ/IE/IS/EE/MU/ET/EN/EX] Basic Electronics

Scheme - G. Sample Test Paper-I

FREQUENTLY ASKED QUESTIONS

Lesson Plan. Electronics 1-Total 51 Hours

Downloaded from Downloaded from

I E I C since I B is very small

II/IV B. TECH. DEGREE EXAMINATIONS, NOVEMBER Second Semester EC/EE ELECTRONIC CIRCUIT ANALYSIS. Time : Three Hours Max.

SYLLABUS OSMANIA UNIVERSITY (HYDERABAD)


SUMMER 13 EXAMINATION Subject Code: Model Answer Page No: / N

Reg. No. : Question Paper Code : B.E./B.Tech. DEGREE EXAMINATION, NOVEMBER/DECEMBER Second Semester

R a) Draw and explain VI characteristics of Si & Ge diode. (8M) b) Explain the operation of SCR & its characteristics (8M)

GUJARAT TECHNOLOGICAL UNIVERSITY BE - SEMESTER III EXAMINATION SUMMER 2013

DHANALAKSHMI COLLEGE OF ENGINEERING DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING EC6202 ELECTRONIC DEVICES AND CIRCUITS

MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified)

SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS. Class XII : PHYSICS WORKSHEET

Roll No. B.Tech. SEM I (CS-11, 12; ME-11, 12, 13, & 14) MID SEMESTER EXAMINATION, ELECTRONICS ENGINEERING (EEC-101)

MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified) Subject Code: Model Answer Page No: 1/

Code No: R Set No. 1

MODEL ANSWER SUMMER 17 EXAMINATION 17319

Basic Electronics Important questions

10. Output Stages and Power Supplies. 10. Output Stages and Power Supplies TLT-8016 Basic Analog Circuits 2005/2006 1

Diodes (non-linear devices)

Hours / 100 Marks Seat No.

EC6202-ELECTRONIC DEVICES AND CIRCUITS YEAR/SEM: II/III UNIT 1 TWO MARKS. 1. Define diffusion current.

IENGINEERS-CONSULTANTS QUESTION BANK SERIES ELECTRONICS ENGINEERING 1 YEAR UPTU ELECTRONICS ENGINEERING EC 101 UNIT 3 (JFET AND MOSFET)

DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING

MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified) MODEL ANSWER

Lesson Plan. Week Theory Practical Lecture Day. Topic (including assignment / test) Day. Thevenin s theorem, Norton s theorem

F.Y. Diploma : Sem. II [CO/CD/CM/CW/IF] Basic Electronics

IENGINEERS- CONSULTANTS QUESTION BANK SERIES ELECTRONICS ENGINEERING 1 YEAR UPTU

INSTITUTE OF AERONAUTICAL ENGINEERING (Autonomous) Dundigal, Hyderabad

Chapter 8. Field Effect Transistor

SRM INSTITUTE OF SCIENCE AND TECHNOLOGY (DEEMED UNIVERSITY)

OBJECTIVE TYPE QUESTIONS

VALLIAMMAI ENGINEERING COLLEGE SRM Nagar, Kattankulathur

Government of Karnataka Department of Technical Education Board of Technical Examinations, Bengaluru

Three Terminal Devices

SETH JAI PARKASH POLYTECHNIC, DAMLA

Scheme Q.1 Attempt any SIX of following: 12-Total Marks a) Draw symbol NPN and PNP transistor. 2 M Ans: Symbol Of NPN and PNP BJT (1M each)

Q1 A) Attempt any six: i) Draw the neat symbol of N-channel and P-channel FET

Analog Electronics. Electronic Devices, 9th edition Thomas L. Floyd Pearson Education. Upper Saddle River, NJ, All rights reserved.

VALLIAMMAI ENGINEERING COLLEGE

UNIVERSITY OF NAIROBI COLLEGE OF BIOLOGICAL AND PHYSICAL SCIENCES FACULTY OF SCIENCE SPH 307 INTRODUCTORY ELECTRONICS

WINTER 14 EXAMINATION. Model Answer. 1) The answers should be examined by key words and not as word-to-word as given in the

FET. FET (field-effect transistor) JFET. Prepared by Engr. JP Timola Reference: Electronic Devices by Floyd

EDC UNIT IV- Transistor and FET Characteristics EDC Lesson 9- ", Raj Kamal, 1

Shankersinh Vaghela Bapu Institute of Technology INDEX

2 MARKS EE2203 ELECTRONIC DEVICES AND CIRCUITS UNIT 1

QUESTION BANK SUBJECT: ELECTRONIC DEVICES AND CIRCUITS

QUESTION BANK EC6201 ELECTRONIC DEVICES UNIT I SEMICONDUCTOR DIODE PART A. It has two types. 1. Intrinsic semiconductor 2. Extrinsic semiconductor.

UNIT I - TRANSISTOR BIAS STABILITY

EC8351-ELECTRON DEVICES AND CIRCUITS TWO MARK QUESTIONS AND ANSWERS UNIT-I PN JUNCTION DEVICES

UNIT I Introduction to DC & AC circuits

ITT Technical Institute. ET215 Devices 1. Chapter

ITT Technical Institute. ET215 Devices 1. Unit 7 Chapter 4, Sections

SIDDHARTH GROUP OF INSTITUTIONS :: PUTTUR Siddharth Nagar, Narayanavanam Road QUESTION BANK (DESCRIPTIVE) PART - A

Summary. Electronics II Lecture 5(b): Metal-Oxide Si FET MOSFET. A/Lectr. Khalid Shakir Dept. Of Electrical Engineering

THE METAL-SEMICONDUCTOR CONTACT

ELECTRONIC DEVICES AND CIRCUITS 2 Mark Questions Solved UNIT 1

Electronics I Circuit Drawings. Robert R. Krchnavek Rowan University Spring, 2018

Paper-1 (Circuit Analysis) UNIT-I

Field Effect Transistors (npn)

(A) im (B) im (C)0.5 im (D) im.

Chapter 2. Diodes & Applications

Electronics I ELEC 311/1 BB. Final August 14, hours 6

EE70 - Intro. Electronics

Scheme Q.1 Attempt any SIX of following 12-Total Marks 1 A) Draw symbol of P-N diode, Zener diode. 2 M Ans: P-N diode

MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified) Summer 2016 EXAMINATIONS.

LESSON PLAN. Sub Code & Name: ME2255 Electronics and Microprocessors Unit : I Branch : ME Semester: IV UNIT I SEMICONDUCTORS AND RECTIFIERS 9

Practical Manual. Deptt.of Electronics &Communication Engg. (ECE)

Course Number Section. Electronics I ELEC 311 BB Examination Date Time # of pages. Final August 12, 2005 Three hours 3 Instructor

CHAPTER 8 FIELD EFFECT TRANSISTOR (FETs)

Lecture 3: Transistors

FET(Field Effect Transistor)

Subject Code: Model Answer Page No: / N

L MOSFETS, IDENTIFICATION, CURVES. PAGE 1. I. Review of JFET (DRAW symbol for n-channel type, with grounded source)

EC6202- ELECTRONIC DEVICES AND CIRCUITS UNIT TEST-1 EXPECTED QUESTIONS

PART-A UNIT I Introduction to DC & AC circuits

Summer 2015 Examination. 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme.

Electronic Circuits II - Revision

Federal Urdu University of Arts, Science & Technology Islamabad Pakistan THIRD SEMESTER ELECTRONICS - II BASIC ELECTRICAL & ELECTRONICS LAB

1 Attempt any TEN: 20- Total Marks. a Define electronics. Give examples of active components. 2M

EC6202- ELECTRONIC DEVICES AND CIRCUITS TWO MARK QUESTIONS AND ANSWERS UNIT- 1 PN JUNCTION DEVICES

Sheet 2 Diodes. ECE335: Electronic Engineering Fall Ain Shams University Faculty of Engineering. Problem (1) Draw the

Diodes and Applications

ITT Technical Institute. ET215 Devices 1. Unit 8 Chapter 4, Sections

Chapter 6: Field-Effect Transistors

2) The larger the ripple voltage, the better the filter. 2) 3) Clamping circuits use capacitors and diodes to add a dc level to a waveform.

PESIT BANGALORE SOUTH CAMPUS BASIC ELECTRONICS

INSTITUTE OF AERONAUTICAL ENGINEERING (Autonomous) Dundigal, Hyderabad

UNIT-VI FIELD EFFECT TRANSISTOR. 1. Explain about the Field Effect Transistor and also mention types of FET s.

Difference between BJTs and FETs. Junction Field Effect Transistors (JFET)

MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified)

Phy 335, Unit 4 Transistors and transistor circuits (part one)

UNIT 3: FIELD EFFECT TRANSISTORS

EIE209 Basic Electronics. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: T ransistor devices

Field - Effect Transistor

Transcription:

Program Name Program Code Semester Course Title Scheme I Sample Question Paper : Diploma in Electronics Program Group : DE/EJ/IE/IS/ET/EN/EX : Second : Basic Electronics : 70 22216 Time: 3 Hrs. Instructions: (1) All questions are compulsory. (2) Illustrate your answers with neat sketches wherever necessary. (3) Figures to the right indicate full marks. (4) Assume suitable data if necessary. (5) Preferably, write the answers in sequential order. Q.1) Attempt any FIVE of the following. a) Name the components of following symbols: 10 1] 2] b) State any two application of FET. c) State type of transistor configuration for obtaining highest current gain. d) Sketch the symbol of P-Channel and N-Channel Enhancement type MOSFET. e) State any two limitations of Zener diode regulator. f) Define: Load regulation and Line regulation. g) Identify the type of diode for the given V-I characteristics shown in figure 1: Figure 1 Q.2) Attempt any THREE of the following. 12 a) Sketch the block diagram of Regulated DC power supply, explain working of each block with input and output waveforms. b) Sketch fixed bias and self bias BJT biasing circuit. c) Differentiate Zener breakdown and Avalanche breakdown on basiss of: 1. Definition 2. Breakdown characteristics d) Explain the thermal runaway phenomenon for BJT 1

Q.3) Attempt any THREE of the following. 12 a) Sketch input and output characteristics of CE configuration. Label various regions on characteristics. b) Explain the working of negative clipper with circuit diagram. c) A JFET has a drain current of 5mA.If I DSS = 10mA and V GS(off) = -6V.Find the value of i) V GS ii) V p d) Explain working of Zener as a voltage regulator with circuit diagram. Q.4) Attempt any THREE of the following. 12 a) Define the following parameters of rectifier:- 1. Peak Inverse Voltage (PIV) 2. Ripple factor 3. Efficiency 4. Transformer Utilization Factor. b) Describe operation of voltage divider biasing with circuit diagram. c) Compare CB and CC configuration of transistor with respect to 1. Voltage Gain 2. Input output terminals 3. Input Impedance 4. Output Impedance d) Calculate input impedance of JFET if reverse gate source voltage of 15V and gate current is 10 3 ua e) Sketch the block diagram of Regulated DC power supply, explain working of each block with output waveforms. Q.5) Attempt any TWO of the following. 12 a) Justify for FET amplification factor depends on its transconductance b) Explain the working of bridge rectifier connected with capacitor filter, sketch circuit diagram and output waveforms with respect to ac signal input, c) Compare LED and photo diode on basis of: 1. Function 2. Symbol 3. Construction Q.6) Attempt any TWO of the following. 12 a) Compare P-N Junction diode and Zener diode on following parameters: 1. Doping Level 2. Breakdown voltage 3. Applications b) Draw the circuit diagram of CE amplifier, explain its working with input and output characteristics. c) Identify the given circuits in figure 2 and draw input and output waveforms for following circuits : Figure 2 2

Program Name Program Code Semester Course Title Scheme I Sample Test Paper - I : Diploma in Electronics Program Group : DE/EJ/IE/IS/ET/EN/EX : Second : Basic Electronics : 20 22216 Time: 1 Hour Instructions: 1. All questions are compulsory 2. Illustrate your answers with neat sketches wherever necessary 3. Figures to the right indicate full marks 4. Assume suitable data if necessary 5. Preferably, write the answers in sequential order Q.1 Attempt any FOUR. a) Define the following terms of PN junction diode: 1. Knee voltage 2. Dynamic resistance. b) State any two types of rectifier circuit. c) Explain the function of capacitor in filter circuit. d) Sketch the characteristics of Zener diode. e) Compare LED and Photo diode on basis : 1. functionn 2. symbol f) State the function of Clipper circuit. 08 Q.2 Attempt any THREE. 12 a) Draw the output waveform Vo at the output of figure 1for the given input waveform. a)input waveform b) Circuit diagram Figure 1 b) Name the component of symbols given in Figure 2: (a) (b) (c) Figure 2 (d) c) Explain the working principle of LED with neat diagram d) Compare Half wave rectifier and Centre tapped full wave rectifier on the basis of following parameter: 3

i. No.of diodes ii. Ripple factor iii. PIV iv. TUF e) Describe the working of Positive Clamper with circuit diagram and waveforms. f) Explain the energy band diagram for conductors, insulator, and semiconductors. 4

Program Name Program Code Semester Course Title Scheme I Sample Test Paper -II : Diploma in Electronics Program Group : DE/EJ/IE/IS/ET/EN/EX : Second : Basic Electronics : 20 22216 Time: 1 Hour Instructions: 1. All questions are compulsory 2. Illustrate your answers with neat sketches wherever necessary 3. Figures to the right indicate full marks 4. Assume suitable data if necessary 5. Preferably, write the answers in sequential order Q.1 Attempt any FOUR. 08 a) State the need of biasing for BJT. b) State any two advantages of Transistorized series regulator. c) Sketch the output waveform at point A and,b of figure 1. Figure 1 d) Sketch the circuit diagram of fixed bias. e) Explain working of transistorized shunt voltage regulator with diagram. f) Draw the symbols of :p channel MOSFET and n channel MOSFET Q.2 Attempt any THREE. (12 ) a) Identify the circuit given in figure 2 and explain its working. Figure 2 b) Explain working of n-channel JFET with diagram. 5

c) Identify given circuit and explain its working. Figure 3 d) Draw the output characteristics of CE configuration, label its different region. e) Identify circuit given in figure 4 and draw input and output waveforms for following circuits: Figure 4 f. Compare CB with CE, configuration of transistor on the basis of: i. Input current, ii. output current, iii. Application iv. Output voltage 6