VS-T40HF..., VS-T70HF..., VS-T85HF..., VS-T110HF... Series Power Rectifiers Diodes (T-Modules), 40 A to 110 A

Similar documents
Power Rectifier Diodes (T-Modules), 40 A to 110 A

Power Rectifier Diodes (T-Modules), 2200 V, 20 A

Standard Recovery Diodes (Stud Version), 12 A

Standard Recovery Diodes (Stud Version), 300 A

Standard Recovery Diodes, 400 A

Standard Recovery Diodes, (Stud Version), 300 A

Standard Recovery Diodes (Stud Version), 400 A

Single phase bridge. (Power Modules), 25 A / 35 A

Standard Recovery Diodes, (Stud Version), 400 A

Single phase bridge. (Power Modules), 25 A/35 A

Standard Diodes (Super MAGN-A-PAK Power Modules), 600 A

VS-85HF(R), VS-86HF(R), VS-87HF(R), VS-88HF(R) Series Standard Recovery Diodes, (Stud Version), 85 A

Three phase bridge. (Power Module), 200 A

Standard Recovery Diodes, (Stud Version), 200 A

Standard Recovery Diodes (Stud Version), 150 A

VS-VSKD91.., VS-VSKC91.., VS-VSKJ91.., VS-VSKE91.. ADD-A-PAK Gen 7 Power Modules Standard Diodes, 100 A

Standard Recovery Diodes, (Stud Version), 85 A

Standard Recovery Diodes, Generation 2 DO-5 (DO-203AB) (Stud Version), 80 A

Standard Recovery Diodes Generation 2 DO-5 (DO-203AB) (Stud Version), 95 A

Single phase bridge. (Power Modules), 25 A, 35 A

Three Phase Bridge (Power Modules), 25 A to 35 A

Standard Recovery Diodes, (Stud Version), 40 A

Standard Recovery Diodes (Stud Version), 70 A

Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 80 A

Power Modules, Passivated Assembled Circuit Elements, 40 A

VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series Power Silicon Rectifier Diodes, (Stud Version), 35 A, 40 A, 60 A

Three Phase Bridge, 160 A (Power Modules)

Three Phase Bridge (Power Modules), 25 A to 35 A

VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series Power Silicon Rectifier Diodes, (Stud Version), 35 A, 40 A, 60 A

Three Phase Bridge, 300 A (Power Modules)

Power Modules, Passivated Assembled Circuit Elements, 25 A

Single Phase Bridge Rectifier, 2 A

Standard Recovery Diodes (Stud Version), 150 A

VS-VSKD91.., VS-VSKC91.., VS-VSKJ91.., VS-VSKE91.. Series ADD-A-PAK Generation VII Power Modules Standard Diodes, 100 A

Three Phase Bridge, 130 A to 160 A (Power Modules)

Standard Recovery Diodes, (Hockey PUK Version), 800 A

Fast Recovery Diodes (Stud Version), 40 A, 70 A, 85 A

High Voltage, Input Rectifier Diode, 20 A

HEXFRED Ultrafast Diodes, 100 A (INT-A-PAK Power Modules)

Fast Recovery Diodes (Stud Version), 6 A, 12 A, 16 A

Single Phase Bridge (Power Modules), 25/35 A

Standard Recovery Diodes, (Stud Version), 85 A

Thyristor/Thyristor (MAGN-A-PAK Power Modules), 320 A

Insulated Single Phase Hyperfast Bridge (Power Modules), 60 A

Three Phase Bridge (Power Modules), 25/35 A

Standard Recovery Diodes (Stud Version), 150 A

Standard Recovery Diodes (Stud Version), 150 A

Standard Recovery Diodes, (Hockey PUK Version), 2100 A

Single Phase Rectifier Bridge, 1.2 A

HEXFRED Ultrafast Diodes, 300 A (INT-A-PAK Power Modules)

High Voltage, Input Rectifier Diode, 10 A

Thyristor / Diode (Super MAGN-A-PAK Power Modules), 570 A

Input Rectifier Diode, 80 A

Single Phase Rectifier Bridge, 1.9 A

Medium Power Silicon Rectifier Diodes, (Stud Version), 12 A

FRED Pt Gen 4 Single Ultrafast Diode, 500 A (INT-A-PAK Power Modules)

HEXFRED Ultrafast Diodes, 300 A (INT-A-PAK Power Modules)

Fast Recovery Diodes (Stud Version), 6 A, 12 A, 16 A

Three Phase Bridge (Power Module), 45 A to 100 A

Single Phase Rectifier Bridge, 2 A

Phase Control Thyristors (Stud Version), 330 A

Three Phase Bridge (Power Modules), 25/35 A

Standard Recovery Diodes, (Hockey PUK Version), 3000 A

Input Rectifier Diode, 60 A

Phase Control Thyristors (Stud Version), 110 A

Fast Recovery Diodes (Hockey PUK Version), 920 A, 1050 A

HEXFRED Ultrafast Soft Recovery Diode, 220 A

AAP Gen 7 (TO-240AA) Power Modules Schottky Rectifier, 200 A

High Performance Schottky Rectifier, 240 A

Thyristor/Thyristor, 150 A (INT-A-PAK Power Module)

Inverter Grade Thyristors (Stud Version), 85 A

Single Phase Rectifier Bridge, 3 A, 6 A

HEXFRED Ultrafast Soft Recovery Diode, 140 A

Phase Control Thyristors (Stud Version), 300 A

AAP Gen 7 (TO-240AA) Power Modules Thyristor/Thyristor, 105 A

SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A, 250 A

Medium Power Phase Control Thyristors (Stud Version), 16 A

High Voltage Surface Mountable Input Rectifier Diode, 8 A

VS-VSKT91.., VS-VSKH91.., VS-VSKL91.., VS-VSKN91.. Series

Standard Recovery Diodes, (Hockey PUK Version), 3800 A

Three Phase Bridge (Power Modules), 90/110 A

Phase Control Thyristor RMS SCRs, 25 A, 35 A

High Performance Schottky Rectifier, 100 A

VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series Thyristor High Voltage, Phase Control SCR, 70 A

Medium Power Phase Control Thyristors (Stud Version), 50 A

Insulated Gen 2 Schottky Rectifier Module, 300 A

Insulated Ultrafast Rectifier Module, 280 A

Three Phase AC Switch (Power Modules), 50 A to 100 A

Single Phase Rectifier Bridge, 1.2 A

Surface Mount Fast Soft Recovery Rectifier Diode, 10 A

Single Phase Rectifier Bridge, 2 A

Insulated Ultrafast Rectifier Module, 230 A

Glass Passivated Junction Plastic Rectifier

Phase Control Thyristors (Stud Version), 110 A

Ultrafast Soft Recovery Diode, 150 A FRED Pt

FEATURES. Package. PARAMETER SYMBOL PB4006 PB4008 PB4010 UNIT Maximum repetitive peak reverse voltage V RRM V

Insulated Ultrafast Rectifier Module, 280 A

Glass Passivated Ultrafast Plastic Rectifier

Phase Control Thyristors (Hockey PUK Version), 1745 A

High Performance Schottky Rectifier, 100 A

Transcription:

Power Rectifiers Diodes (T-Modules), A to A FEATURES Electrically isolated base plate D-55 (T-module) Types up to V RRM 35 V RMS isolating voltage Simplified mechanical designs, rapid assembly High surge capability Large creepage distances UL E78996 approved Designed and qualified for industrial level Material categorization: for definitions of compliance please see /doc?99912 PRODUCT SUMMARY I F(AV) Type V RRM Package Circuit A to A Modules - Diode, High Voltage V to V D-55 (T-module) Single diode DESCRIPTION / APPLICATIONS These series of T-modules use standard recovery power rectifier diodes. The semiconductors are electrically isolated from the metal base, allowing common heatsink and compact assembly to be built. Applications include power supplies, battery charges, welders, motor controls and general industrial current rectification. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS THF THF T85HF THF UNITS 85 A I F(AV) T C 85 85 85 85 C I F(RMS) 63 134 173 A 5 Hz 5 I FSM A Hz 125 2 I 2 t 5 Hz 163 7 14 5 5 Hz 645 13 5 18 A 2 s I 2 t 16 3 148 4 3 A 2 s V RRM to V T J - to + C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-THF... VS-THF... VS-T85HF... VS-THF... VOLTAGE CODE V RRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V V RSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 3 5 1 I RRM MAXIMUM AT T J = 25 C μa Revision: 29-Sep-15 1 Document Number: 93587 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?

FORWARD CONDUCTION VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS THF THF T85HF THF Maximum average forward 85 A I F(AV) 1 conduction, half sine wave current at case temperature 85 85 85 85 C Maximum RMS forward current I F(RMS) 63 134 173 A t = ms No voltage 5 Maximum peak, one-cycle t = 8.3 ms reapplied 125 2 forward, non-repetitive surge I FSM A t = ms % V current RRM Sinusoidal 4 145 t = 8.3 ms reapplied half wave, 5 5 17 t = ms No voltage initial T J = 163 7 14 5 5 reapplied T J maximum Maximum I 2 t for fusing I 2 t = 8.3 ms 645 13 5 18 t A 2 s t = ms % V RRM 1 5 5 14 5 t = 8.3 ms reapplied 5 45 9 13 Maximum I 2 t for fusing I 2 t t =.1 ms to ms, no voltage reapplied 16 3 148 4 3 A 2 s Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance V F(TO)1 (16.7 % x x I F(AV) < I < x I F(AV) ), T J maximum.66.76.68.68 V F(TO)2 (I > x I F(AV) ), T J maximum.84.95..86 r f1 (16.7 % x x I F(AV) < I < x I F(AV) ), T J maximum 4.3 2.4 1.76 1.56 r f2 (I > x I F(AV) ), T J maximum 3.1 1.7 1.8 1.12 1.3 1.35 1.27 1.35 V Maximum forward voltage drop V FM t p = μs square pulse I FM = x I F(AV), T J = 25 C, Average power = V F(TO) x I F(AV) + r f x (I F(RMS) ) 2 V m BLOCKING PARAMETER SYMBOL TEST CONDITIONS THF THF T85HF THF UNITS Maximum peak reverse leakage current I RRM T J = C 15 15 ma 5 Hz, circuit to base, all terminals shorted RMS isolation voltage V ISOL T J = 25 C, t = 1 s 35 35 35 35 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction operating and storage temperature range Maximum thermal resistance, junction to case per junction Maximum thermal resistance, case to heatsink Mounting torque, to heatsink ± % VALUES THF THF T85HF THF T J, T Stg - to + C R thjc operation 1.36.69.62.47 R thcs Mounting surface smooth, flat and greased Non-lubricated M3.5 mounting screws (1) 1.3 ± % terminals threads M5 screw terminals 3 ± % Nm Approximate weight See dimensions - link at the end of datasheet 54 g Case style D-55 (T-module) Note (1) A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the compound.2 UNITS K/W Revision: 29-Sep-15 2 Document Number: 93587 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?

R CONDUCTION PER JUNCTION SINUSOIDAL CONDUCTION AT T J MAXIMUM RECTANGULAR CONDUCTION AT T J MAXIMUM DEVICES 1 1 THF....12.14.18.27.46.9.15..28.46 THF....9.11.14..35.7.11.15.21.35 T85HF....8.9.12.18.31.6..13.19.31 THF....5.7.9.14.23.5.8..15.24 Note Table shows the increment of thermal resistance R thjc when devices operate at different conduction angles than UNITS K/W THF.. Serie s R () = 1.36 K/W thjc 1 3 5 THF.. Serie s R thjc () = 1.36 K/W 1 3 5 Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 45 35 3 25 15 5 1 RMS Limit THF.. Serie s T = C J 1.5 K/W 5 15 25 3 35 25 5 75 125 Maximum Allowable Ambient Temperature ( C) 2 K/ W 3 K/W 5 K/W 7 K/W K/W 1 K/W Fig. 3 - Forward Power Loss Characteristics R =.5 K/W - Delta R Revision: 29-Sep-15 3 Document Number: 93587 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?

5 3 1 RMSLimit THF.. Series T = C J 1.5 K/W 2 K/W 5 K/W K/ W 3 5 25 5 75 125 1 K/W 3 K/W 7 K/W R =.5 K/ W - Delta R Maximum Allowable Ambient Temperature ( C) Fig. 4 - Forward Power Loss Characteristics 55 5 45 35 3 25 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J = C @ Hz.83 s @ 5 Hz. s THF.. Serie s 1 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current THF.. Serie s R thjc () =.69 K/ W 1 3 5 Fig. 7 - Current Ratings Characteristics Maximum Non Repetitive Surge Current 55 Versus Pulse Train Duration. Initial T J= C 5 No Voltage Reapplied 45 Rated V RRM Reapplied 35 3 25 THF.. Serie s.1.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current THF.. Serie s R thjc () =.69 K/ W 1 Fig. 8 - Current Ratings Characteristics Revision: 29-Sep-15 4 Document Number: 93587 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?

5 3 1 RMS Lim it THF.. Serie s T = C J 1 K/ W 1.5 K/W 2 K/ W 3 K/W 5 K/W 7 K/ W R =.3 K/ W - Delta R 3 5 25 5 75 125 Maximum Allowable Ambient Temperature ( C).7 K/W.5 K/W Fig. 9 - Forward Power Loss Characteristics 1 RMS Limit THF.. Series T = C J.5K/ W.7K/W 25 5 75 125 1K/ W 1.5K/W 2K/W 3K/W 5K/W.3K/W R =.2 K/ W - Delta R Maximum Allowable Ambient Temperature ( C) Fig. - Forward Power Loss Characteristics 1 5 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J= C @ Hz.83 s @ 5 Hz. s THF.. Series 3 1 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 11 - Maximum Non-Repetitive Surge Current Maximum Non Repetitive Surge Current 1 Versus Pulse Train Duration. Initial T J = C No Voltage Reapplied Rated V RRM Reapplied 5 3 THF.. Series.1.1 1 Pulse Train Duration (s) Fig. 12 - Maximum Non-Repetitive Surge Current Revision: 29-Sep-15 5 Document Number: 93587 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?

T85HF.. Series R thjc () =.62 K/W 1 3 5 T85HF.. Se rie s R thjc () =.62 K/ W 1 Fig. 13 - Current Ratings Characteristics Fig. 14 - Current Ratings Characteristics 5 3 1 RM S Limit T85HF.. Serie s T = C J 1 K/ W 1.5 K/ W 2 K/ W 3 K/ W R =.2 K/ W - Delta R 3 5 25 5 75 125 Maximum Allowable Ambient Temperature ( C).7 K/W 5 K/ W 7 K/ W.5 K/W.3 K/W Fig. 15 - Forward Power Loss Characteristics 1 RMSLimit T85HF.. Serie s T = C J.5K/ W.7K/ W 1K/ W 25 5 75 125 Maximum Allowable Ambient Temperature ( C).3K/W 1.5K/W 2K/W 3K/ W 5K/ W R =.2 K/ W - Delta R Fig. 16 - Forward Power Loss Characteristics Revision: 29-Sep-15 6 Document Number: 93587 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?

At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J= C @ Hz.83 s @ 5 Hz. s T85HF.. Serie s 1 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 17 - Maximum Non-Repetitive Surge Current THF.. Series R thjc () =.47 K/W 1 Fig. 19 - Current Ratings Characteristics Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial T J = C No Voltage Reapplied Rated V RRM Reapplied T85HF.. Serie s.1.1 1 Pulse Train Duration (s) Fig. 18 - Maximum Non-Repetitive Surge Current THF.. Serie s R thjc () =.47 K/ W 1 1 1 Fig. - Current Ratings Characteristics 1 RMS Limit 5 3 THF.. Series T J = C 25 5 75 125 Maximum Allowable Ambient Temperature ( C).7 K/ W 1 K/W 1.5 K/ W 2 K/W 3 K/ W 5 K/ W.5 K/W.3 K/W R =.2 K/ W - Delta R Fig. 21 - Forward Power Loss Characteristics Revision: 29-Sep-15 7 Document Number: 93587 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?

1 1 1 RMS Limit THF.. Series T = C J R =.2 K/W - Delta R.3 K/W.5 K/ W.7 K/ W 1 K/ W 1.5 K/ W 2 K/ W 3 K/ W 5 K/ W 1 1 25 5 75 125 Maximum Allowable Ambient Temperature ( C) Fig. 22 - Forward Power Loss Characteristics At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J= C @ Hz.83 s @ 5 Hz. s THF.. Se ries 1 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 23 - Maximum Non-Repetitive Surge Current Instantaneous Forward Current (A) T = 25 C J T = C J THF.. Serie s 1.5 1 1.5 2 2.5 3 3.5 4 Instantaneous Forward Voltage (V) Fig. 25 - Forward Voltage Drop Characteristics Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial T J = C No Voltage Reapplied Rated V RRM Reapplied THF.. Serie s.1.1 1 Pulse Train Duration (s) Fig. 24 - Maximum Non-Repetitive Surge Current Instantaneous Forward Current (A) T J= 25 C T J= C THF.. Series 1.5 1 1.5 2 2.5 3 Instantaneous Forward Voltage (V) Fig. 26 - Forward Voltage Drop Characteristics Revision: 29-Sep-15 8 Document Number: 93587 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?

Instantaneous Forward Current (A) T = 25 C J T = C J T85HF.. Series Instantaneous Forward Current (A) T = 25 C J T J= C THF.. Serie s 1 2 3 4 5.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Instantaneous Forward Voltage (V) Instantaneous Forward Voltage (V) Fig. 27 - Forward Voltage Drop Characteristics Fig. 28 - Forward Voltage Drop Characteristics Transient Thermal Impedance Z thjc (K/W) Ste a d y Sta t e Va lue : R thjc = 1.36 K/ W THF.. Serie s R thjc =.69 K/ W THF.. Series 1 R thjc =.62 K/ W R thjc =.47 K/ W ( Operation) T85HF.. Serie s THF.. Series.1.1.1.1.1.1 1 Square Wave Pulse Duration (s) Fig. 29 - Thermal Impedance Z thjc Characteristics ORDERING INFORMATION TABLE Device code VS- T HF 1 2 3 4 5 1 - product 2 - Module type 3 - Current rating 4 - Circuit configuration (see Circuit Configuration table) 5 - Voltage code x = V RRM CIRCUIT CONFIGURATION CIRCUIT DESCRIPTION CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING Single diode HF + - Dimensions LINKS TO RELATED DOCUMENTS /doc?95313 Revision: 29-Sep-15 9 Document Number: 93587 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?

Outline Dimensions D-55 T-Module Diode Standard and Fast Recovery DIMENSIONS in millimeters (inches) 25 ± 1 23.5 (.93) 3 (.12) 41 (1.61) MAX. 11 (.43) 18 (.71) + 27 (1.6) 15 (.59) 3.9 (.15) 8 (.31) - M5 3 (1.18) Document Number: 95313 For technical questions, contact: indmodules@vishay.com Revision: 1-Jul-8 1

Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 13-Jun-16 1 Document Number: