N-channel SiC power MOSFET Datasheet V DSS R DS(on) (Typ.) I D P D 2V 4m 55A 262W Outline TO-247N () (2) (3) Inner circuit Features (2) ) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel () (3) * () Gate (2) Drain (3) Source * Body Diode 5) Simple to drive Packaging specifications 6) Pb-free lead plating ; RoHS compliant Packing Tube Reel size (mm) - Application Solar inverters DC/DC converters Switch mode power supplies Induction heating Motor drives Type Tape width (mm) - Basic ordering unit (pcs) 3 Taping code Marking C Absolute maximum ratings (T a = 25 C) Parameter Drain - Source voltage Symbol Value Unit V DSS 2 V Continuous drain current T c = 25 C T c = C I D * I D * 55 A 39 A drain current I D,pulse *2 37 A Gate - Source voltage V GSS 4 to 22 V Junction temperature T j 75 C Range of storage temperature T stg 55 to 75 C /3 26.6 - Rev.B
Thermal resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal resistance, junction - case R thjc -.44.57 C/W Electrical characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Drain - Source breakdown voltage V (BR)DSS V GS = V, I D = ma 2 - - V Zero gate voltage drain current I DSS V DS = 2V, V GS = V T j = 25 C - T j = 5 C - 2 - A Gate - Source leakage current I GSS V GS = 22V, V DS = V - - na Gate - Source leakage current I GSS V GS = 4V, V DS = V - - na Gate threshold voltage V GS (th) V DS = V, I D = ma 2.7-5.6 V Static drain - source on - state resistance R DS(on) V GS = 8V, I D = 2A T j = 25 C - 4 52 T j = 25 C - 6 - m Gate input resistance R G f = MHz, open drain - 7-2/3 26.6 - Rev.B
Electrical characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Transconductance g fs V DS = V, I D = 2A - 8.3 - S Input capacitance C iss V GS = V - 337 - Output capacitance C oss V DS = 8V - 76 - pf Reverse transfer capacitance C rss f = MHz - 27 - Effective output capacitance, energy related C o(er) V GS = V V DS = V to 6V - 22 - pf Turn - on delay time t d(on) Rise time t r Turn - off delay time t d(off) Fall time t f V DD = 4V, I D = 8A - 2 - V GS = 8V/V - 39 - R L = 22-49 - R G = - 24 - ns V DD = 6V, I D =2A Turn - on switching loss E on V GS = 8V/V R G = L=25 H *E Turn - off switching loss E on includes diode off reverse recovery - 283 - - 8 - J Gate Charge characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Total gate charge Q g Gate - Source charge Q gs V DD = 6V - 7 - I D = 2A - 22 - nc Gate - Drain charge Q gd V GS = 8V - 4 - Gate plateau voltage V (plateau) V DD = 6V, I D = 2A - 9.6 - V * Limited only by maximum temperature allowed. *2 PW s, Duty cycle % 3/3 26.6 - Rev.B
Body diode electrical characteristics (Source-Drain) (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Inverse diode continuous, forward current I S * Tc = 25 C - - 55 A Inverse diode direct current, pulsed I SM *2 - - 37 A Forward voltage V SD V GS = V, I S = 2A - 3.2 - V Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm I F = 2A, V R = 6V di/dt = A/ s - 25 - ns - 5 - nc - 9 - A 4/3 26.6 - Rev.B
Electrical characteristic curves Fig. Power Dissipation Derating Curve 3 Fig.2 Maximum Safe Operating Area Operation in this area is limited by R DS(on) Power Dissipation : P D [W] 25 2 5 5 5 5 2 P W = ms Single Pulse P W = ms P W = ms P W = s.. Junction Temperature : T j [ C] Transient Thermal Resistance : R th [K/W] Fig.3 Typical Transient Thermal Resistance vs. Pulse Width.. Single Pulse..... Pulse Width : P W [s] 5/3 26.6 - Rev.B
Electrical characteristic curves Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II) 5 4 3 2 8V 6V 4V 2V 2V V V GS = 8V 25 2 5 5 8V 6V 4V 2V 2V V V GS = 8V 2 4 6 8 2 3 4 5 Fig.6 T j = 5 C Typical Output Characteristics(I) 5 4 3 2 2V 8V 6V 4V 2V V V GS = 8V Fig.7 T j = 5 C Typical Output Characteristics(II) 25 2 5 2V 2V 4V 6V 8V V V GS = 8V T a = 5ºC 2 4 6 8 5 T a = 5ºC 2 3 4 5 6/3 26.6 - Rev.B
Electrical characteristic curves Fig.8 Typical Transfer Characteristics (I) Fig.9 Typical Transfer Characteristics (II) 5. V DS = V T a = 5ºC T a = 75ºC T a = 25ºC 4 3 2 V DS = V T a = 5ºC T a = 75ºC T a = 25ºC. 2 4 6 8 2 4 6 8 2 2 4 6 8 2 4 6 8 2 Gate - Source Voltage : V GS [V] Gate - Source Voltage : V GS [V] Gate Threshold Voltage : V GS(th) [V] Fig. Gate Threshold Voltage vs. Junction Temperature 6 5 4 3 2 V DS = V I D = ma -5 5 5 2 Junction Temperature : T j [ C] Fig. Transconductance vs. Drain Current Transconductance : g fs [S] V DS = V T a = 5ºC T a = 75ºC T a = 25ºC.. 7/3 26.6 - Rev.B
Electrical characteristic curves Static Drain - Source On-State Resistance : R DS(on) [ ] Fig.2 Static Drain - Source On - State Resistance vs. Gate Source Voltage.6.4.2..8.6.4.2 I D = 2A I D = 37A 6 8 2 4 6 8 2 22 Gate - Source Voltage : V GS [V] Static Drain - Source On-State Resistance : R DS(on) [ ] Fig.3 Static Drain - Source On - State Resistance vs. Junction Temperature.6.4.2..8.6.4.2 V GS = 8V I D = 37A I D = 2A -5 5 5 2 Junction Temperature : T j [ºC] Fig.4 Static Drain - Source On - State Resistance vs. Drain Current Static Drain - Source On-State Resistance : R DS(on) [ ].. V GS = 8V T a = 5ºC T a = 75ºC T a = 25ºC 8/3 26.6 - Rev.B
Electrical characteristic curves Capacitance : C [pf] Switching Time : t [ns] Fig.5 Typical Capacitance vs. Drain - Source Voltage Fig.7 Switching Characteristics. f = MHz V GS = V t d(off) t f t r t d(on) C rss C oss C iss V DD = 4V V GS = 8V R G = Gate - Source Voltage : V GS [V] Coss Stored Energy : E OSS [ J] 4 3 2 Fig.6 Coss Stored Energy 2 4 6 8 Fig.8 Dynamic Input Characteristics 2 5 5 V DD = 6V I D = 2A. 2 3 4 5 6 7 8 9 Total Gate Charge : Q g [nc] 9/3 26.6 - Rev.B
Electrical characteristic curves Switching Energy : E [ J] Fig.9 Typical Switching Loss vs. Drain - Source Voltage 5 45 4 35 3 25 2 5 5 I D =2A V GS = 8V/V R G = L=25 H E on E off Switching Energy : E [ J] 8 6 4 2 8 6 4 2 Fig.2 Typical Switching Loss vs. Drain Current V DD =6V V GS = 8V/V R G = L=25 H E on E off 2 4 6 8 2 3 4 5 6 Fig.2 Typical Switching Loss vs. External Gate Resistance 8 Switching Energy : E [ J] 6 4 2 8 6 4 V DD =6V I D =2A V GS = 8V/V L=25 H E on E off 2 5 5 2 25 3 External Gate Resistance : R G [ ] /3 26.6 - Rev.B
Electrical characteristic curves Inverse Diode Forward Current : I S [A] Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage.. V GS = V T a = 5ºC T a = 75ºC T a = 25ºC 2 3 4 5 6 7 8 Source - Drain Voltage : V SD [V] Fig.23 Reverse Recovery Time vs.inverse Diode Forward Current Reverse Recovery Time : t rr [ns] di / dt = A / us V R = 6V V GS = V Inverse Diode Forward Current : I S [A] /3 26.6 - Rev.B
Measurement circuits Fig.- Switching Time Measurement Circuit Fig.-2 Switching Waveforms Fig.2- Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3- Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms E on = I D V DS E off = I D V DS Same type device as D.U.T. V DS I rr V surge D.U.T. I D I D Fig.4- Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform D.U.T. 2/3 26.6 - Rev.B
Dimensions TO-247 3/3 26.6 - Rev.B
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