8A, 500V N-CHANNEL MOSFET 0BGENERAL DESCRIPTION SVF8N50F/T/PN/FJ is an N-channel enhancement mode power MOS field effect transistor which is produced using proprietary F-Cell TM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. BFEATURES 8A,500V,R DS(on)(typ.) =0.26Ω@V GS =0V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. Package Marking Hazardous Substance Control Packing SVF8N50F TO-220F-3L SVF8N50F Pb free Tube SVF8N50T TO-220-3L SVF8N50T Pb free Tube SVF8N50PN TO-3P 8N50 Pb free Tube SVF8N50FJ TO-220FJ-3L SVF8N50FJ Halogen free Tube http: //www.silan.com.cn Page of 0
ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted) Ratings Characteristics Symbol SVF8N50F/FJ SVF8N50T SVF8N50PN Unit Drain-Source Voltage V DS 500 V Gate-Source Voltage V GS ±30 V Drain Current T C = 25 C I D T C = 00 C Drain Current Pulsed I DM 72.0 A Power Dissipation(T C=25 C) -Derate above 25 C P D 8 54 232 240 W 0.43.86.92 W/ C Single Pulsed Avalanche Energy (Note ) E AS 502 mj Operation Junction Temperature Range T J -55~+50 C Storage Temperature Range T stg -55~+50 C A THERMAL CHARACTERISTICS Ratings Characteristics Symbol SVF8N50F/FJ SVF8N50T SVF8N50PN Unit Thermal Resistance, Junction-to-Case R θjc 2.3 0.54 0.52 C/W Thermal Resistance, Junction-to-Ambient R θja 62.5 62.5 50 C/W ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Characteristics Symbol Test conditions Min. Typ. Max. Unit Drain -Source Breakdown Voltage BV DSS V GS=0V, I D=250µA 500 -- -- V Drain-Source Leakage Current I DSS V DS=500V, V GS=0V -- --.0 µa Gate-Source Leakage Current I GSS V GS=±30V, V DS=0V -- -- ±00 na Gate Threshold Voltage V GS(th) V GS= V DS, I D=250µA 2.0 -- 4.0 V Static Drain- Source On State Resistance R DS(on) V GS=0V, I D=9.0A -- 0.26 0.3 Ω Input Capacitance C iss -- 2320 -- Output Capacitance C oss V DS=25V,V GS=0V, f=.0mhz -- 282 -- pf Reverse Transfer Capacitance C rss -- 7 -- Turn-on Delay Time t d(on) V DD=250V, I D=8.0A, -- 60 -- Turn-on Rise Time t r R G=25Ω -- 3 -- Turn-off Delay Time t d(off) -- 5 -- ns Turn-off Fall Time t f (Note 2,3) -- 75 -- Total Gate Charge Q g V DS=400V, I D=8.0A, -- 38 -- Gate-Source Charge Q gs V GS=0V -- 2 -- nc Gate-Drain Charge Q gd (Note 2,3) -- 2 -- http: //www.silan.com.cn Page 2 of 0
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Symbol Test conditions Min. Typ. Max. Unit Continuous Source Current I S Integral Reverse p-n Junction Diode in -- -- 8.0 Pulsed Source Current I SM the MOSFET -- -- 72.0 A Diode Forward Voltage V SD I S=8.0A,V GS=0V -- --.3 V Reverse Recovery Time T rr I S=8.0A,V GS=0V, -- 583 -- ns Reverse Recovery Charge Q rr di F/dt=00A/µs(Note 2) -- 7. -- µc. L=30mH, I AS=8.60A, V DD=40V, R G=25Ω, starting T J=25 C; 2. Pulse Test: Pulse width 300μs,Duty cycle 2%; 3. Essentially independent of operating temperature. http: //www.silan.com.cn Page 3 of 0
TYPICAL CHARACTERISTICS Drain Current ID(A) 00 0 Figure. On-Region Characteristics Figure 2. Transfer Characteristics Variable VGS=4.5V VGS=5V VGS=5.5V VGS=6V VGS=7V VGS=8V VGS=0V VGS=5V Drain Current ID(A) 00 0-55 C 25 C 50 C.250µS pulse test 2.T C=25 C 0. 0. 0 00 Drain-Source Voltage V DS (V) 0..250µS pulse test 2.V DS=50V 0 2 3 4 5 6 7 8 9 0 Gate-Source Voltage V GS (V) 0.29 Figure 3. On-Resitance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 00 Drain-Source On-Resistance RDS(ON)(Ω) 0.28 0.27 0.26 V GS=0V V GS=20V Note: T J=25 C Reverse Drain Current IDR(A) 0-55 C 25 C 50 C.250µS pulse test 2.V GS=0V 0.25 0 4 8 2 6 20 0. 0 0.2 0.4 0.6 0.8.0.2 Drain Current I D (A) Source-Drain Voltage V SD (V) Capasistance(pF) 5000 4500 4000 3500 3000 2500 2000 500 000 500 Figure 5. Capacitance Characteristics Ciss Coss Crss Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd. V GS=0V 2. f=mhz Gate-Source Voltage VGS(V) 2 0 8 6 4 2 Figure 6. Gate Charge Characteristics V DS=400V V DS=250V V DS=00V Note: I D=8A 0 0. 0 00 0 0 8 6 24 32 40 Drain-Source Voltage V DS (V) Total Gate Charge Qg(nC) http: //www.silan.com.cn Page 4 of 0
TYPICAL CHARACTERISTICS (continued) Drain-Source Breakdown Voltage BVDSS(Normalized).2..0 0.9 Figure 7. Breakdown Voltage Variation vs. Temperature. V GS=0V 2. I D=250µA 0.8-00 -50 0 50 00 50 200 Junction Temperature T J ( C) Drain-Source On-Resistance RDS(ON)(Normalized) 3.0 2.5 2.0.5.0 0.5 Figure 8. On-resistance Variation vs. Temperature. V GS=0V 2. I D=9.0A 0.0-00 -50 0 50 00 50 200 Junction Temperature T J ( C) 0 2 Figure 9-. Max. Safe Operating Area(SVF8N50F/FJ) 0 2 Figure 9-2. Max. Safe Operating Area(SVF8N50T) Drain Current - ID(A) 0 0 0 0 - Operation in This Area is Limited by RDS(ON) DC.TC=25 C 2.Tj=50 C 3.Single Pulse 0ms ms 00µs Drain Current - ID(A) 0 0 0 0 - Operation in This Area is Limited by RDS(ON).TC=25 C 2.Tj=50 C 3.Single Pulse DC 0ms ms 00µs 0-2 0 0 0 0 2 0 3 0-2 0 0 0 0 2 0 3 Drain Source Voltage - V DS (V) Drain Source Voltage - V DS (V) Drain Current - ID(A) 0 2 0 0 0 0 - Figure 9-3. Max. Safe Operating Area(SVF8N50PN) Operation in This Area is Limited by RDS(ON).TC=25 C 2.Tj=50 C 3.Single Pulse DC 0ms ms 00µs Drain Current - ID(A) 8 6 4 2 0 8 6 4 2 Figure 0. Maximum Drain Current vs. Case Temperature 0-2 0 0 0 0 2 0 3 0 25 50 75 00 25 50 Drain Source Voltage - V DS (V) Case Temperature T C ( C) http: //www.silan.com.cn Page 5 of 0
TYPICAL TEST CIRCUIT Gate Charge Test Circuit & Waveform 2V 200nF 50KΩ 300nF Same Type as DUT VDS VGS 0V Qg Qgs Qgd VGS DUT 3mA Charge Resistive Switching Test Circuit & Waveform VGS VDS RL VDD VDS 90% 0V RG DUT 0% VGS td(on) tr ton td(off) tf toff Unclamped Inductive Switching Test Circuit & Waveform VDS L BVDSS EAS = 2 LI AS 2 BVDSS BVDSS - VDD ID IAS 0V tp RG DUT VDD VDD ID(t) VDS(t) tp Time http: //www.silan.com.cn Page 6 of 0
PACKAGE OUTLINE TO-220F-3L UNIT: mm 4.42 4.70 2.30 2.54 2.50 2.76 0.70 0.80 0.35 0.50 5.25 5.87 5.30 5.75 9.30 9.80 9.73 0.6 2.54BCS 6.40 6.68 2.48 2.98 / / 3.00 3.8 3.05 3.30 5.02 2.80 3.0 0.90.47 0.65 6.25 6.30 0.30 0.36 7.00 3.48 3.50 3.40 3.55 3 TO-3P UNIT: mm 5.5±0.50 8.5~0.0.2~.80 9.5~2.0 Φ 3.0~3.7 39.0~4.5 3.0±0.3 2.6~3.8 2.0±0.3.2~2.0.0±0.3 0.6±0.2 5.45TYP 4.4~5.2 9.5~20.0 http: //www.silan.com.cn Page 7 of 0
PACKAGE OUTLINE(continued) TO-220-3L UNIT: mm 4.30 4.50 4.70.00.30.50.80 2.40 2.80 0.60 0.80.00.00.60 0.30 0.70 5.0 5.70 6.0 8.0 9.20 0.00 9.60 9.90 0.40 2.54BSC 6.0 6.50 7.00 2.60 3.08 3.60 3.40 3.95 3.70 3.90 2.60 3.20 TO-220FJ-3L UNIT: mm 4.42 4.70 2.30 2.54 2.50 2.76 0.55 0.70 0.35 0.50 5.25 5.87 3.97 4.47 0.58.08 9.73 0.6 2.54BCS 6.40 6.68 2.48 2.98 3.00 3.8 3.05 3.30 5.02 2.80 3.0 0.85.29 0.65 6.25 4.97.58 0.36 7.00 3.48 2.00 3.40 3.55 3 http: //www.silan.com.cn Page 8 of 0
Disclaimer : reserves the right to make changes to the information herein for the improvement of the design and performance without prior notice! Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. All semiconductor products malfunction or fail with some probability under special conditions. When using products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of such products could cause loss of body injury or damage to property. will supply the best possible product for customers! Part No.: SVF8N50F/T/PN/FJ Document Type: Datasheet Copyright: Website: http: //www.silan.com.cn Rev.: 2.. Add the package information of TO-220FJ-3L 2. Update characteristics Rev.: 2.0. Modify the package information of TO-220-3L Rev.:.9. Modify the package information of TO-220F-3L Rev.:.8. Modify the thermal characteristics Rev.:.7. Modify the ordering information Rev.:.6. Change the schematic diagram of MOS Rev.:.5. Modify TYPICAL CHARACTERISTICS Rev.:.4. Modify the values of T rr and Q rr Rev.:.3. Modify TYPICAL CHARACTERISTICS Rev.:.2. Add the package of TO-220-3L http: //www.silan.com.cn Page 9 of 0
Document Type:_Datasheet Rev.:.. Modify PACKAGE OUTLINE Rev.:.0. Original Rev.:. http: //www.silan.com.cn Page 0 of 0