September 7, 2006 MS3897A CCD Image Sensor Imager Process Review For comments, questions, or more information about this report, or for any additional technical needs concerning semiconductor technology, please call Sales at Chipworks. 3685 Richmond Road, Suite 500, Ottawa, ON K2H 5B7, Canada Tel: 613.829.0414 Fax: 613.829.0515 www.chipworks.com
Imager Process Review Table of Contents 1 Overview 1.1 List of Figures 1.2 List of Tables 1.3 Company Profile 1.4 Introduction 1.5 Device Summary 1.6 Process Summary 2 Device Overview 2.1 Package and Die Identification 2.2 Die Features 3 Process Analysis 3.1 General Device Structure 3.2 Dielectrics 3.3 Metallization 3.4 Vias and Contacts 3.5 Peripheral Transistors and Poly 3.6 Isolation 3.7 Wells and Substrate 4 Pixel Analysis 4.1 Pixel Overview 4.2 Pixel Plan View Analysis 4.3 Pixel Cross-Sectional Analysis (Diagonal) 4.4 Color Filters and Microlenses 5 Materials Analysis 5.1 TEM-EDS Analysis of Metals and Dielectrics 6 Critical Dimensions 6.1 Package and Die 6.2 Process 6.3 Pixel Array 7 References Report Evaluation
Overview 1-1 1 Overview 1.1 List of Figures 2 Device Overview 2.1.1 FinePix F30 Camera 2.1.2 FinePix F30 Product Identification 2.1.3 FinePix F30 Main Board and Image Sensor Assembly 2.1.4 Image Sensor & Lens Assembly Front 2.1.5 Image Sensor & Lens Assembly Side 2.1.6 Image Sensor & Lens Assembly Back 2.1.7 Image Sensor & Lens Assembly Plan View X-Ray 2.1.8 Image Sensor & Lens Assembly Side View X-Ray 2.1.9 CCD Image Sensor Assembly Top 2.1.10 CCD Image Sensor Assembly Bottom 2.1.11 JAPAN MS3897A Top 2.1.12 MS3897A Bottom 2.1.13 MS3897A Plan View X-Ray 2.1.14 MS3897A Die Photograph Color Filters and Microlenses Removed 2.1.15 MS3897A Die Photograph Analysis Sites 2.1.16 Die Markings 2.2.1 Die Corner A 2.2.2 Die Corner B 2.2.3 Die Corner C 2.2.4 Die Corner D 2.2.5 Minimum Pitch Bond Pads 2.2.6 Bond Pad Dimensions 2.2.7 Test Structure A 2.2.8 Test Structure B 2.2.9 Test Structure C 2.2.10 Test Structure D 2.2.11 Test Structure E 2.2.12 Test Structure F 2.2.13 Test Structure G 3 Process Analysis 3.1.1 MS3897A - Pixel Array General Structure 3.1.2 Die Edge 3.1.3 Edge of Bond Pad 3.2.1 Passivation TEM 3.2.2 Passivation 3.2.3 IMD 3.2.4 PMD 3.3.1 Minimum Pitch Metal 2 3.3.2 Metal 2 Thickness 3.3.3 Minimum Pitch Metal 1 (Pixel Array)
Overview 1-2 3.4.1 Minimum Pitch Vias 3.4.2 Minimum Pitch Contacts to Poly 3.4.3 Minimum Pitch Contacts to Diffusion 3.4.4 Minimum Width Contact 3.5.1 Minimum Poly Dimensions Pixel Array 3.5.2 Dielectrics Beneath Poly 2 TEM, Pixel Array 3.5.3 Detail of Dielectrics Beneath Poly 2 TEM, Pixel Array 3.5.4 Interpoly Dielectric and Buffer Oxide 3.5.5 Minimum Pitch Poly 3.5.6 Amplifier Schematic 3.5.7 Output Amplifier Overview 3.5.8 T1 and Reset Transistors Plan View 3.5.9 T1 Transistor Gate Length Cross Section View 3.5.10 Reset Transistor Gate Length Cross Section View 3.5.11 T2 Transistor Plan View 3.5.12 T3 Transistor Plan View 3.5.13 T4 Transistor Plan View 3.5.14 T5 Transistor Plan View 3.5.15 Detail of T5 Transistor Plan View 3.5.16 T6 Transistor Plan View 3.5.17 T7 and T8 Transistors Plan View 3.5.18 Detail of T8 Transistor 3.6.1 Edge of FOX 3.6.2 Minimum Width LOCOS 3.7.1 SRP Profile of N-epi 3.7.2 SRP Profile Peripheral P-well 3.7.3 SRP Profile of Peripheral P-well Detail 3.7.4 SRP Profile of Pixel Array Well Structure 4 Pixel Analysis 4.2.1 Silicon Nitride Microlens 4.2.2 Tungsten Light Shield 4.2.3 Array Corner Dark and Active Pixels 4.2.4 Detail of Pixel Aperture 4.2.5 Pixel at Poly 4.2.6 Bevel Sample SCM of CCD Array 4.2.7 Substrate Sample SCM of CCD Array 4.3.1 Pixel at Poly Planes of Cross-Sectioning 4.3.2 CCD Pixel Overview Diagonal Cross Section 4.3.3 Pixel Aperture Diagonal Cross Section (TEM) 4.3.4 Pixel Aperture Diagonal Cross Section (SEM) 4.3.5 Pixel N-Photocathode and P-pinning Layer SCM 4.3.6 Poly 1 Control Line Transfer Site 4.3.7 Poly 1 Control Line Transfer Site
Overview 1-3 4.4.1 Edge of Array Color Filters and Microlenses 4.4.2 Microlens Radius of Curvature 4.4.3 Organic Microlens Profile Perspective View AFM 4.4.4 Organic Microlens Profile Plan View AFM 4.4.5 Organic Microlens Height AFM Line Scan 4.4.6 Red and Green Color Filters 4.4.7 Blue and Green Color Filters 5 Materials Analysis 5.1.1 TEM-EDS Spectrum of Metal 1 Body 5.1.2 TEM-EDS Spectrum of Metal 1 Barrier 5.1.3 TEM-EDS Spectrum of Passivation 2 and Passivation 3 5.1.4 TEM-EDS Spectrum of Passivation 1 5.1.5 TEM-EDS Spectrum of IMD 2 5.1.6 TEM-EDS Spectrum of IMD 1
Overview 1-4 1.2 List of Tables 1 Overview 1.5.1 MS3897A Device Summary 1.6.1 MS3897A CIS Process Summary 2 Device Overview 2.1.1 Package and Die Dimensions 2.2.1 Bond Pad Dimensions 3 Process Analysis 3.2.1 Dielectric Thicknesses 3.3.1 Metallization Vertical Dimensions 3.3.2 Minimum Metallization Horizontal Dimensions 3.4.1 Via and Contact Dimensions 3.5.1 Peripheral Transistor and Polycide Dimensions 3.5.2 Output Amplifier Transistor Gate Dimensions 3.6.1 LOCOS Observed Critical Dimensions 4 Pixel Analysis 4.1.1 Pixel Array Horizontal Dimensions 4.1.2 Pixel Array Vertical Dimensions 6 Critical Dimensions 6.1.1 Package and Die Dimensions 6.1.2 Bond Pad Dimensions 6.2.1 Dielectric Thicknesses 6.2.2 Metallization Vertical Dimensions 6.2.3 Minimum Metallization Horizontal Dimensions 6.2.4 Via and Contact Dimensions 6.2.5 Peripheral Transistor and Polycide Dimensions 6.2.6 Output Amplifier Transistor Gate Dimensions 6.2.7 LOCOS Observed Critical Dimensions 6.3.1 Pixel Array Horizontal Dimensions 6.3.2 Pixel Array Vertical Dimensions
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