Power MOSFET PRODUCT SUMMARY V DS (V) 600 R DS(on) ( ) V GS = V 0.75 Q g (Max.) (nc) 49 Q gs (nc) 3 Q gd (nc) 20 Configuration Single G D 2 PAK (TO-263) D S Note a. See device orientation. G N-Channel MOSFET Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. ). b. Starting T J = 25 C, L = 6.8 mh, R g = 25, I AS = 9.2 A (see fig. 2). c. I SD 9.2 A, di/dt 50 A/μs, V DD V DS, T J 50 C. d..6 mm from case. D S FEATURES Halogen-free According to IEC 6249-2-2 Definition Low Gate Charge Q g results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Compliant to RoHS Directive 2002/95/EC APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching APPLICABLE OFF LINE SMPS TOPOLOGIES Active Clamped Forward Main Switch ORDERING INFORMATION Package D 2 PAK (TO-263) D 2 PAK (TO-263) D 2 PAK (TO-263) Lead (Pb)-free and Halogen-free SiHFS9N60A-GE3 SiHFS9N60ATRR-GE3 a SiHFS9N60ATRL-GE3 a Lead (Pb)-free SnPb IRFS9N60APbF IRFS9N60ATRRPbF a IRFS9N60ATRLPbF a SiHFS9N60A-E3 SiHFS9N60ATR-E3 a SiHFS9N60ATL-E3 a IRFS9N60A IRFS9N60ATRR a IRFS9N60ATRL a SiHFS9N60A SiHFS9N60ATR a SiHFS9N60ATL a ABSOLUTE MAXIMUM RATINGS (T C = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 600 V Gate-Source Voltage V GS ± 30 Continuous Drain Current V GS at V T C = 25 C 9.2 I D T C = C 5.8 A Pulsed Drain Current a I DM 37 Linear Derating Factor.3 W/ C Single Pulse Avalanche Energy b E AS 290 mj Repetitive Avalanche Current a I AR 9.2 A Repetitive Avalanche Energy a E AR 7 mj Maximum Power Dissipation T C = 25 C P D 70 W Peak Diode Recovery dv/dt c dv/dt 5.0 V/ns Operating Junction and Storage Temperature Range T J, T stg - 55 to 50 Soldering Recommendations (Peak Temperature) for s 300 d C * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 9287 www.vishay.com S-2433-Rev. B, 25-Oct-
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient R thja - 40 C/W Maximum Junction-to-Case (Drain) R thjc - 0.75 SPECIFICATIONS (T J = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V DS V GS = 0 V, I D = 250 μa 600 - - V V DS Temperature Coefficient V DS /T J Reference to 25 C, I D = ma - 0.66 - V/ C Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = 250 μa 2.0-4.0 V Gate-Source Leakage I GSS V GS = ± 30 V - - ± na V DS = 600 V, V GS = 0 V - - 25 Zero Gate Voltage Drain Current I DSS V DS = 480 V, V GS = 0 V, T J = 25 C - - 250 μa Drain-Source On-State Resistance R DS(on) V GS = V I D = 5.5 A b - - 0.75 Forward Transconductance g fs V DS = 25 V, I D = 3. A 5.5 - - S Dynamic Input Capacitance C iss V GS = 0 V, - 400 - Output Capacitance C oss V DS = 25 V, - 80 - f =.0 MHz, see fig. 5 Reverse Transfer Capacitance C rss - 7. - pf V DS =.0 V, f =.0 MHz - 957 - Output Capacitance C oss V GS = 0 V V DS = 480 V, f =.0 MHz - 49 - Effective Output Capacitance C oss eff. V DS = 0 V to 480 V c - 96 - Total Gate Charge Q g - - 49 Gate-Source Charge Q gs I V GS = V D = 9.2 A, V DS = 400 V see fig. 6 and 3 b - - 3 nc Gate-Drain Charge Q gd - - 20 Turn-On Delay Time t d(on) - 3 - Rise Time t r V DD = 300 V, I D = 9.2 A - 25 - R g = 9., R D = 35.5 Turn-Off Delay Time t d(off) see fig. b - 30 - ns Fall Time t f - 22 - Drain-Source Body Diode Characteristics MOSFET symbol Continuous Source-Drain Diode Current I S showing the - - 9.2 D integral reverse A G Pulsed Diode Forward Current a I SM p - n junction diode - - 37 Body Diode Voltage V SD T J = 25 C, I S = 9.2 A, V GS = 0 V b - -.5 V Body Diode Reverse t rr - 530 800 ns Recovery Time T J = 25 C, I F = 9.2 A, di/dt = A/μs b Body Diode Reverse Recovery Charge Q rr - 3.0 4.4 μc Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by L S and L D ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. ). b. Pulse width 300 μs; duty cycle 2 %. c. C oss eff. is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80 % V DS. S www.vishay.com Document Number: 9287 2 S-2433-Rev. B, 25-Oct-
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) I D, Drain-to-Source Current (A) VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.7V 4.7V I D, Drain-to-Source Current (A) T J = 50 C T J = 25 C 20µs PULSE WIDTH 0. T J = 25 C 0. V DS, Drain-to-Source Voltage (V) Fig. - Typical Output Characteristics V DS= 50V 20µs PULSE WIDTH 0. 4.0 5.0 6.0 7.0 8.0 9.0.0 V GS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics I D, Drain-to-Source Current (A) VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.7V 4.7V 20µs PULSE WIDTH T J = 50 C V DS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics r DS(on), Drain-to-Source On Resistance (Normalized) 3.0 2.5 2.0.5.0 0.5 I D = 9.2A V GS = V 0.0-60 -40-20 0 20 40 60 80 20 40 60 T J, Junction Temperature ( C) Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 9287 www.vishay.com S-2433-Rev. B, 25-Oct- 3
C, Capacitance (pf) 2400 2000 600 200 800 400 iss oss rss V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTED C rss = Cgd C oss = C ds Cgd I SD, Reverse Drain Current (A) T J = 50 C T J = 25 C 0 A 0 V DS, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage V GS = 0 V 0. 0.2 0.5 0.7.0.2 V SD,Source-to-Drain Voltage (V) Fig. 7 - Typical Source-Drain Diode Forward Voltage V GS, Gate-to-Source Voltage (V) 20 6 2 8 4 I = D 9.2A V DS = 480V V DS = 300V V DS = 20V FOR TEST CIRCUIT SEE FIGURE 3 0 0 20 30 40 50 Q G, Total Gate Charge (nc) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage I D, Drain Current (A) 0 OPERATION IN THIS AREA LIMITED BY R DS(on) us us ms ms TC = 25 C TJ = 50 C Single Pulse 0. 0 00 V DS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area www.vishay.com Document Number: 9287 4 S-2433-Rev. B, 25-Oct-
.0 V DS R D I D, Drain Current (A) 8.0 6.0 4.0 2.0 R g V GS V Pulse width µs Duty factor 0. % D.U.T. - V DD Fig. a - Switching Time Test Circuit V DS 90 % 0.0 25 50 75 25 50 T C, Case Temperature ( C) Fig. 9 - Maximum Drain Current vs. Case Temperature % V GS t d(on) t r t d(off) t f Fig. b - Switching Time Waveforms Thermal Response (Z thjc ) 0. D = 0.50 0.20 0. 0.05 t 0.02 SINGLE PULSE t2 0.0 (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 0.0 2. Peak T J = P DM x Z thjc TC 0.0000 0.000 0.00 0.0 0. t, Rectangular Pulse Duration (sec) PDM Fig. - Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 V V DS t p V DS L Driver R g 20 V t p D.U.T I AS 0.0 Ω - V DD A I AS Fig. 2a - Unclamped Inductive Test Circuit Fig. 2b - Unclamped Inductive Waveforms Document Number: 9287 www.vishay.com S-2433-Rev. B, 25-Oct- 5
E AS, Single Pulse Avalanche Energy (mj) 600 500 400 300 200 TOP BOTTOM I D 4.A 5.8A 9.2A 0 25 50 75 25 50 Starting T, Junction Temperature ( J C) Fig. 2c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. V Q G 2 V 0.2 µf 50 kω 0.3 µf Q GS Q GD D.U.T. V - DS V G V GS Charge Fig. 3a - Basic Gate Charge Waveform 3 ma Fig. 3b - Gate Charge Test Circuit I G I D Current sampling resistors www.vishay.com Document Number: 9287 6 S-2433-Rev. B, 25-Oct-
Peak Diode Recovery dv/dt Test Circuit D.U.T. - Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer - - R g dv/dt controlled by R g Driver same type as D.U.T. I SD controlled by duty factor D D.U.T. - device under test - V DD Driver gate drive P.W. Period D = P.W. Period V GS = V a D.U.T. l SD waveform Reverse recovery current Body diode forward current di/dt D.U.T. V DS waveform Diode recovery dv/dt V DD Re-applied voltage Inductor current Body diode forward drop Ripple 5 % I SD Note a. V GS = 5 V for logic level devices Fig. 4 - For N-Channel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?9287. Document Number: 9287 www.vishay.com S-2433-Rev. B, 25-Oct- 7
Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 90 www.vishay.com Revision: -Mar-