20V 3.2 A N-Channel MOSFET 20V 3.2 A N-Channel MOSFET Features Low on-resistance R DS(ON) = 60 mω (Typ.) @ V GS = 4.5V, ID = 3.2A High current drive I D = 3.2 ma Low gate drive 8V Low threshold 1.0 V (Typ.) Fast switching speed Turn-on delay 7 ns Turn-off delay 15 ns Low Power Consumption Operating temperature -55 ~150 o C Applications Switching power supply Power amplifier Motor Control Power Converter Power Switch Available Package SOT-23 RoHS compliance General Description The is a miniature surface mount N-channel enhancement mode MOSFET with low R DS(ON). And fast switching speed. This makes it ideal for use in space sensitive, high efficiency power management applications. Typical applications are DC-to-DC converters and power management in portable and battery-powered products such as portable multimedia player, PDA and cordless phones. Marking Diagram and Pin Assignment N-Channel Enhancement Mode MOSFET SOT-23 Package Ordering Information Device Reel Size Quantity per Rail CS9N2302S1LT1 7 inches 3000 units CS9N2302S1LT3 13 inches 10000 units Pb-Free package 8mm tape width Top View and Marking Page 1
Absolute Maximum Ratings ( T a = 25 C unless otherwise specified) Parameter Symbol Maximum Units Drain-Source Voltage V DS 20 V Gate-Source Voltage V GS ± 8 V Drain Current Continuous I D 3.2 A Drain Current Pulsed 2 I DM 10 A Maximum Power Dissipation 1 P D 550 mw Operating Junction and Storage Temperature T J, T stg -55 ~ 150 C NOTE 1: Pulse Test : Pulse width 300 s, Duty Cycle 2% NOTE 2: Guaranteed by design, not subject to production NOTE 3: Maximum ratings are for design aid only, not subject to production testing. Maximum ratings are those values beyond w hich can damage device. Thermal Characteristics (T a = 25 C unless otherwise specified) Parameter Symbol Maximum Units Thermal Resistance, Junction-to-Ambient R JA 115 o C/W Electrical Characteristics ( T a = 25 C unless otherwise Specified) Parameter Symbol Condition Min Typ Max Units Drain-Source Breakdown Voltage BV DS V GS = 0V, I D = 10 A 20 V Zero Gate Voltage Drain Current I DS V DS = 16V, V GS = 0V 1 A Gate-Body Leakage I GS V GS = ±8V, V DS = 0V 100 na Gate Threshold Voltage V th V GS = V DS, I D = 50 A 0.4 0.75 1.2 V Drain-Source On-State Resistance R DS(ON) V GS = 4.5V, I D = 3.6A 50 85 V GS = 2.5V, I D = 3.1A 65 115 m On-State Drain Current I D(ON) V DS = 5V, V GS = 2.5V 4 A Forward Tran conductance g FS V DS = 5V, I D = 3.6A 2 7.7 1.4 S Diode Forward Voltage V SD V GS = 0V, I D = 1.1A 0.6 0.8 1.15 V Input Capacitance C ISS V DS = 10V 450 Output Capacitance C OSS V GS = 0V f = 1.0MHz 70 Reverse Transfer Capacitance C RSS 43 Turn-on Delay Time t D(ON) Rise Time Turn-off Delay Time t r t D(OFF) V DD = 5V I D = 3.6A V GS = 4.5V R GS = 6Ω R L = 2.8 80 60 Fall Time t f 25 15 pf ns Page 2
Typical Performance Characteristics Page 3
Package information Page 4
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