PD - 97390 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l Lead-Free HEXFET Power MOSFET V DSS R DS(on) max Qg (typ.) 30V 8.7m:@ = V 7.6nC D S D G TO-220AB G D S Gate Drain Source Absolute Maximum Ratings V DS I D @ T C = 25 C I D @ T C = C I DM P D @T C = 25 C P D @T C = C T J T STG Drain-to-Source Voltage Gate-to-Source Voltage Parameter Continuous Drain Current, @ V Continuous Drain Current, @ V Pulsed Drain Current c Maximum Power Dissipation g Maximum Power Dissipation g Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for seconds Mounting torque, 6-32 or M3 screw Max. 30 ± 20 62 44 250 65 33 0.43-55 to 75 300 (.6mm from case) lbxin (.Nxm) Units V A W W/ C C Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case g 2.3 R θcs Case-to-Sink, Flat Greased Surface 0.5 C/W R θja Junction-to-Ambient f 62 Notes through are on page 9 www.irf.com 4/22/09
Static @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units BV DSS Drain-to-Source Breakdown Voltage 30 V = 0V, I D = 250μA ΔΒV DSS /ΔT J Breakdown Voltage Temp. Coefficient 2 mv/ C Reference to 25 C, I D = ma R DS(on) Static Drain-to-Source On-Resistance 6.5 8.7 mω = V, I D = 3A e 3. 6 = 4.5V, I D = 25A e (th) Gate Threshold Voltage.35.80 2.35 V V DS =, I D = 25μA Δ(th) /ΔT J Gate Threshold Voltage Coefficient -7.0 mv/ C I DSS Drain-to-Source Leakage Current.0 μa V DS = 24V, = 0V 50 V DS = 24V, = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage na = 20V Gate-to-Source Reverse Leakage - = -20V gfs Forward Transconductance 35 S V DS = 5V, I D = 25A Q g Total Gate Charge 7.6 3 Q gs Pre-Vth Gate-to-Source Charge.9 V DS = 5V Q gs2 Post-Vth Gate-to-Source Charge.2 nc = 4.5V Q gd Gate-to-Drain Charge 3.4 I D = 25A Q godr Gate Charge Overdrive 2.0 See Fig. 6 Q sw Switch Charge (Q gs2 Q gd ) 4.6 Q oss Output Charge 7.9 nc V DS = 5V, = 0V R G Gate Resistance 2.3 3.8 Ω t d(on) Turn-On Delay Time 9. V DD = 5V, = 4.5Ve t r Rise Time 93 I D = 25A t d(off) Turn-Off Delay Time 9.0 ns R G =.8Ω t f Fall Time 7 See Fig. 4 C iss Input Capacitance 77 = 0V C oss Output Capacitance 360 pf V DS = 5V C rss Reverse Transfer Capacitance ƒ =.0MHz Avalanche Characteristics Parameter Typ. Max. Units E AS Single Pulse Avalanche Energyd 98 mj I AR Avalanche Currentc 25 A Diode Characteristics Parameter Min. Typ. Max. Units I S Continuous Source Current 62 (Body Diode) A I SM Pulsed Source Current 250 (Body Diode)c V SD Diode Forward Voltage.0 V t rr Reverse Recovery Time 6 24 ns Q rr Reverse Recovery Charge 4 2 nc MOSFET symbol showing the integral reverse Conditions Conditions p-n junction diode. T J = 25 C, I S = 25A, = 0V e T J = 25 C, I F = 25A, V DD = 5V di/dt = 200A/μs e 2 www.irf.com
I D, Drain-to-Source Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) VGS TOP V 9.0V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V VGS TOP V 9.0V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V 3.0V 3.0V 60μs PULSE WIDTH Tj = 25 C 0. 60μs PULSE WIDTH Tj = 75 C 0. V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 I D = 25A = V.5 T J = 75 C T J = 25 C.0 V DS = 5V 60μs PULSE WIDTH 0. 0.0 2.0 4.0 6.0 8.0, Gate-to-Source Voltage (V) 0.5-60 -40-20 0 20 40 60 80 20 40 60 80 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature www.irf.com 3
I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) C, Capacitance (pf), Gate-to-Source Voltage (V) 0 = 0V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd Ciss 4 2 I D = 25A V DS = 24V V DS = 5V Coss 8 Crss 6 4 2 V DS, Drain-to-Source Voltage (V) 0 0 4 8 2 6 20 24 28 Q G Total Gate Charge (nc) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS (on) T J = 75 C μsec msec msec T J = 25 C = 0V 0. 0.2 0.4 0.6 0.8.0.2.4.6.8 V SD, Source-to-Drain Voltage (V) T C = 25 C T J = 75 C Single Pulse 0. 0. V DS, Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com
I D, Drain Current (A) (th) Gate threshold Voltage (V) 80 60 2.5 2.0 I D =.0mA I D = 250μA I D = 25μA 40.5 20.0 0 25 50 75 25 50 75 T C, CaseTemperature ( C) 0.5-75 -50-25 0 25 50 75 25 50 75 T J, Temperature ( C ) Fig 9. Maximum Drain Current vs. Case Temperature Fig. Threshold Voltage vs. Temperature D = 0.50 Thermal Response ( Z thjc ) 0. 0.0 0.00 0.20 0. 0.05 0.02 0.0 SINGLE PULSE ( THERMAL RESPONSE ) τj τj τ τ Ci= τi/ri Ci i/ri R R 2 R 3 R R 2 R 3 τ 2 τ 3 τ 2 τ 3 E-006 E-005 0.000 0.00 0.0 0. t, Rectangular Pulse Duration (sec) R4 R4 τ4 τ4 τc τ Ri ( C/W) τι (sec) 0.003454 3.68748 0.7246 7.2E-05 0.78632 0.00227.36828 0.00778 Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc Tc Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5
R DS(on), Drain-to -Source On Resistance (mω) E AS, Single Pulse Avalanche Energy (mj) 32 400 28 24 I D = 3A 300 I D TOP 5.4A A BOTTOM 25A 20 200 6 2 T J = 25 C 8 4 T J = 25 C 2 4 6 8, Gate -to -Source Voltage (V) 0 25 50 75 25 50 75 Starting T J, Junction Temperature ( C) Fig 2. On-Resistance vs. Gate Voltage Fig 3a. Maximum Avalanche Energy vs. Drain Current 5V tp V (BR)DSS V DS L DRIVER R G 20V tp D.U.T IAS 0.0Ω - V DD A Fig 3b. Unclamped Inductive Test Circuit I AS Fig 3c. Unclamped Inductive Waveforms V DS R D D.U.T. V DS 90% R G - V DD Pulse Width µs Duty Factor 0. % % t d(on) t r t d(off) t f Fig 4a. Switching Time Test Circuit Fig 4b. Switching Time Waveforms 6 www.irf.com
- D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period =V V DD * R G dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * = 5V for Logic Level Devices Fig 5. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs Current Regulator Same Type as D.U.T. Id Vds 2V.2μF 50KΩ.3μF Vgs D.U.T. V - DS Vgs(th) 3mA I G I D Current Sampling Resistors Qgodr Qgd Qgs2 Qgs Fig 6a. Gate Charge Test Circuit Fig 6b. Gate Charge Waveform www.irf.com 7
TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com
TO-220AB Part Marking Information EXAMPLE: T HIS IS AN IRF LOT CODE 789 AS SEMBLED ON WW 9, 2000 IN THE ASSEMBLY LINE "C" Note: "P" in assembly line position indicates "Lead - Free" INTERNATIONAL RECTIFIER LOGO AS S E MB LY LOT CODE PART NUMBER DAT E CODE YEAR 0 = 2000 WEEK 9 LINE C Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 0.32mH, R G = 25Ω, I AS = 25A. ƒ Pulse width 400μs; duty cycle 2%. When mounted on " square PCB (FR-4 or G- Material). For recommended footprint and soldering techniques refer to application note #AN-994. R θ is measured at T J approximately 90 C. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) 252-75 TAC Fax: (3) 252-7903 Visit us at www.irf.com for sales contact information.04/2009 www.irf.com 9