Power MOSFET 6 V,.7 m, 93 A, Single N Channel Features Small Footprint (x6 mm) for Compact esign Low R S(on) to Minimize Conduction Losses Low Q G and Capacitance to Minimize river Losses WF Wettable Flank Option for Enhanced Optical Inspection AEC Q Qualified and PPAP Capable These evices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant V (BR)SS R S(ON) MAX I MAX.7 m @ V 6 V 93 A 6.3 m @. V MAXIMUM RATINGS (T J = C unless otherwise noted) Parameter Symbol Value Unit rain to Source Voltage V SS 6 V Gate to Source Voltage V GS ± V Continuous rain Current R JC (Notes, 3) Power issipation R JC (Note ) Continuous rain Current R JA (Notes,, 3) Power issipation R JA (Notes & ) Steady State Steady State T C = C I 93 A T C = C 6 T C = C P 79 W T C = C T A = C I A T A = C T A = C P 3.7 W T A = C.8 Pulsed rain Current T A = C, t p = s I M 7 A Operating Junction and Storage Temperature T J, T stg to +7 Source Current (Body iode) I S A Single Pulse rain to Source Avalanche Energy (I L(pk) = A) Lead Temperature for Soldering Purposes (/8 from case for s) C E AS 8 mj T L 6 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction to Case Steady State R JC.9 C/W Junction to Ambient Steady State (Note ) R JA. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.. Surface mounted on FR board using a 6 mm, oz. Cu pad. 3. Maximum current for pulses as long as second is higher but is dependent on pulse duration and duty cycle. G () FN (SO 8FL) CASE 88AA STYLE (,6) S (,,3) N CHANNEL MOSFET S S S G MARKING IAGRAM XXXXXX AYWZZ XXXXXX = C66L XXXXXX = () or XXXXXX = 66LWF XXXXXX = (WF) A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability ORERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page of this data sheet. Semiconductor Components Industries, LLC, 6 March, 8 Rev. 6 Publication Order Number: /
ELECTRICAL CHARACTERISTICS (T J = C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS rain to Source Breakdown Voltage V (BR)SS V GS = V, I = A 6 V rain to Source Breakdown Voltage Temperature Coefficient V (BR)SS / T J. mv/ C Zero Gate Voltage rain Current I SS V GS = V, V S = 6 V T J = C T J = C Gate to Source Leakage Current I GSS V S = V, V GS = ±6 V ± na ON CHARACTERISTICS (Note ) Gate Threshold Voltage V GS(TH) V GS = V S, I = 8 A.. V Threshold Temperature Coefficient V GS(TH) /T J.9 mv/ C rain to Source On Resistance R S(on) V GS = V I = A 3.8.7 V GS =. V I = A. 6.3 Forward Transconductance g FS V S = V, I = A S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C ISS 6 Output Capacitance C OSS V GS = V, f = MHz, V S = V 9 Reverse Transfer Capacitance C RSS 7 Total Gate Charge Q G(TOT) V GS =. V, V S = 3 V; I = A.7 Total Gate Charge Q G(TOT) V GS = V, V S = 3 V; I = A 33.7 Threshold Gate Charge Q G(TH). Gate to Source Charge Q GS.6 Gate to rain Charge Q G V GS =. V, V S = 3 V; I = A. Plateau Voltage V GP.8 V SWITCHING CHARACTERISTICS (Note ) Turn On elay Time t d(on) Rise Time t r V GS =. V, V S = 3 V,.9 Turn Off elay Time t d(off) I = A, R G =. 3.6 Fall Time t f. RAIN SOURCE IOE CHARACTERISTICS Forward iode Voltage V S VGS = V, I S = A Reverse Recovery Time t RR. T J = C.88. T J = C.78 Charge Time t a V GS = V, dis/dt = A/ s,.8 ischarge Time t b I S = A. Reverse Recovery Charge Q RR 3 nc. Pulse Test: pulse width 3 s, duty cycle %.. Switching characteristics are independent of operating junction temperatures. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions..9 A m pf nc ns V ns
TYPICAL CHARACTERISTICS I, RAIN CURRENT (A) 8 6 V to. V 3.8 V 3.6 V 3. V 3. V 3. V.8 V I, RAIN CURRENT (A) 8 6 T J = C T J = C T J = C..... 3...... 3. 3.. V S, RAIN TO SOURCE VOLTAGE (V) V GS, GATE TO SOURCE VOLTAGE (V) Figure. On Region Characteristics Figure. Transfer Characteristics R S(on), RAIN TO SOURCE RESISTANCE ( ).8.7.6...3 3 6 V GS, GATE VOLTAGE (V) Figure 3. On Resistance vs. Gate to Source Voltage 7 T J = C I = A 8 9 R S(on), RAIN TO SOURCE RESISTANCE ( ).7.6...3 T J = C 3 7 V GS =. V V GS = V I, RAIN CURRENT (A) 3 Figure. On Resistance vs. rain Current and Gate Voltage 9 R S(on), NORMALIZE RAIN TO SOURCE RESISTANCE.9.7..3..9.7 V GS = V I = A 7 7 T J, JUNCTION TEMPERATURE ( C) Figure. On Resistance Variation with Temperature I SS, LEAKAGE (na),, T J = C T J = 8 C V S, RAIN TO SOURCE VOLTAGE (V) Figure 6. rain to Source Leakage Current vs. Voltage 3 3
TYPICAL CHARACTERISTICS C, CAPACITANCE (pf) 6 8 C ISS C OSS C RSS 3 V GS = V T J = C f = MHz 6 V GS, GATE TO SOURCE VOLTAGE (V) 8 6 Q GS Q G 8 6 Q T V S = 3 V T J = C I = A 8 3 3 V S, RAIN TO SOURCE VOLTAGE (V) V S, RAIN TO SOURCE VOLTAGE (V) Q G, TOTAL GATE CHARGE (nc) Figure 7. Capacitance Variation Figure 8. Gate to Source and rain to Source Voltage vs. Total Charge t, TIME (ns) V GS =. V V = 3 V I = A t d(off) t f t r t d(on) I S, SOURCE CURRENT (A) 3 3 T J = C T J = C T J = C.3...6.7.8.9. R G, GATE RESISTANCE ( ) V S, SOURCE TO RAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure. iode Forward Voltage vs. Current T C = C V GS V. ms I S (A) dc ms ms. ms I PEAK (A) T J(initial) = C T J(initial) = C. R S(on) Limit Thermal Limit Package Limit. E E 3 E V S (V) TIME IN AVALANCHE (s) Figure. Safe Operating Area Figure. I PEAK vs. Time in Avalanche
% uty Cycle R JA(t) ( C/W) % % % % % 6 mm, oz., Cu Single Layer Pad... Single Pulse..... PULSE TIME (sec) Figure 3. Thermal Characteristics EVICE ORERING INFORMATION evice Marking Package Shipping TG C66L FN (Pb Free) / Tape & Reel WFTG 66LWF FN (Pb Free, Wettable Flanks) T3G C66L FN (Pb Free) WFT3G 66LWF FN (Pb Free, Wettable Flanks) AFTG C66L FN (Pb Free) WFAFTG 66LWF FN (Pb Free, Wettable Flanks) / Tape & Reel / Tape & Reel / Tape & Reel / Tape & Reel / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BR8/.
MECHANICAL CASE OUTLINE PACKAGE IMENSIONS SCALE :. C. C 8X b. C A B. c L PIN (EXPOSE PA) G E 3 TOP VIEW SIE VIEW BOTTOM VIEW X e/ e K A E. C A L B E X ETAIL A. C c FN x6,.7p (SO 8FL) CASE 88AA ISSUE N ETAIL A X RECOMMENE SOLERING FOOTPRINT* M X.9.6 X.3 X.7 A C SEATING PLANE 3..3 IM MIN NOM A.9. A. b.33. c.3.8..7.9 3.8. E 6. E.7.9 E 3. 3.6 e.7 BSC G..7 K..3 L..7 L. REF M 3. 3. ATE JUN 8 NOTES:. IMENSIONING AN TOLERANCING PER ASME Y.M, 99.. CONTROLLING IMENSION: MILLIMETER. 3. IMENSION AN E O NOT INCLUE MOL FLASH PROTRUSIONS OR GATE BURRS. MILLIMETERS 3.8 GENERIC MARKING IAGRAM* XXXXXX AYWZZ MAX....33..3.. 6. 6.3 6. 3.8.7..7 XXXXXX = Specific evice Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb Free indicator, G or microdot, may or may not be present. Some products may not follow the Generic Marking. STYLE : PIN. SOURCE. SOURCE 3. SOURCE. GATE. RAIN OCUMENT NUMBER: STYLE : X PIN. ANOE.9. ANOE 3. ANOE. NO CONNECT. CATHOE.96 X. X.7 ESCRIPTION:.33.7 PITCH IMENSIONS: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLERRM/. Electronic versions are uncontrolled except when accessed directly from the ocument Repository. 98AON36 Printed versions are uncontrolled except when stamped CONTROLLE COPY in red. FN x6,.7p (SO 8FL) PAGE OF ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. Semiconductor Components Industries, LLC, 8
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