MMIC Mixer, IIP3=15dBm, MCPH6

Similar documents
2SC5374A. RF Transistor 10V, 100mA, ft=5.2ghz, NPN Single SMCP. Features. Specifications

55GN01FA. RF Transistor 10V, 70mA, ft=5.5ghz, NPN Single SSFP. Features. Specifications

2SC5245A. RF Transistor 10V, 30mA, ft=8ghz, NPN Single MCP. Features. Specifications. : NF=1.4dB typ (f=1.5ghz) High gain

SMA3107. MMIC Amplifier, 3V, 6mA, 0.1 to 2.8GHz, MCPH6. Features. Specifications

SMA3117. MMIC Amplifiler, 5V, 22.7mA, 0.1 to 3GHz, MCPH6. Features. Specifications

Low-frequency Amplifer, high-speed switching small motor drive, muting circuit

15C01M. Bipolar Transistor 15V, 0.7A, Low VCE(sat) NPN Single MCP. Applications. Features. Specifications. Low-frequency Amplifier, muting circuit

CPH6532. Bipolar Transistor 50V, 1A, Low VCE(sat) NPN Dual CPH6. Applications. Features. Specifications

2SD1012. Bipolar Transistor 15V, 0.7A, Low VCE(sat), NPN Single SPA. Specifications. Absolute Maximum Ratings at Ta=25 C

Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers

2SD1620. Bipolar Transistor 10V, 3A, Low VCE(sat), NPN Single PCP

Large current capacitance (IC=10A) Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.)) High-speed switching (tf=25ns(typ.

SMA3109. MMIC Amplifier, 3V, 16mA, 0.1 to 3.6GHz, MCPH6. Features. Specifications. Low current. : ICC=16mA typ. Absolute Maximum Ratings at Ta=25 C

MCH4009. RF Transistor 3.5V, 40mA, ft=25ghz, NPN Single MCPH4. Features. Specifications

High-speed switching applications (switching regulator, driver circuit) Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 60 V

30A02CH. Bipolar Transistor 30V, 0.7A, Low VCE(sat) PNP Single CPH3. Applications. Features. Specifications

2SD1835. Bipolar Transistor 50V, 2A, Low VCE(sat), NPN Single NP. Applications

MCH6541. Bipolar Transistor. ( )30V, ( )3A, Low VCE(sat) Complementary Dual MCPH6

High-speed switching Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm) High allowable power dissipation

High-speed switching Ultrasmall package permitting applied sets to be small and slim (mounting height : 0.85mm) High allowable power dissipation

Collector Dissipation Tc=25 C 30 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C

(-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA. Large current capacity High-speed switching

CPH3910. N-Channel JFET 25V, 20 to 40mA, 40mS, CPH3. Applications. Features. Specifications. For AM tuner RF amplification Low noise amplifier

2SA608N/2SC536N. Bipolar Transistor. ( )50V, ( )150mA, Low VCE(sat) (PNP)NPN Single NPA-WA. Applicaitons. Features. Specifications ( ) : 2SA608N

Relay drivers, high-speed inverters, converters, and other general high-current switching applications

(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP

PIN Diode Dual series Pin Diode for VHF, UHF and AGC 50V, 50mA, rs=max 4.5Ω, MCP

Relay drivers, high-speed inverters, converters, and other general high-current switching applications

Low collector to emitter saturation voltage Large current capacity

(-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCP

500 mw When mounted on ceramic substrate (250mm 2 0.8mm) 1.3 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C

2SC5994 Bipolar Transistor 50V, 2A, Low VCE(sat), NPN Single

2SA1418/2SC3648. Bipolar Transistor. ( )160V, ( )0.7A, Low VCE(sat), (PNP)NPN Single PCP. Applicaitons Color TV audio output, inverter

Excellent Power Device Dual buffer driver for general purpose, Dual SOIC8

Low-Frequency general-purpose amplifier, impedance conversion, infrared sensor applications

Low collector-to-emitter saturation voltage Large current capacity and wide ASO

Excellent Power Device Dual inverter driver for general purpose, Dual SOIC8

NSVF6003SB6/D. RF Transistor 12 V, 150 ma, ft = 7 GHz, NPN Single

TIG067SS. N-Channel IGBT 400V, 150A, VCE(sat);3.8V Single SOIC8. Features. Specifications. TIG 067 LOT No.

Parameter Symbol Conditions Ratings Unit

Planar Ultrafast Rectifier Fast trr type, 20A, 600V, 50ns, TO-220F-2FS

SBE805. Schottky Barrier Diode 30V, 0.5A, Low IR. Features. Specifications

Low collector-to-emitter saturation voltage Fast switching speed

EMH1307. P-Channel Power MOSFET 20V, 6.5A, 26mΩ, Single EMH8. Features. Specifications. Input Capacitance Ciss=1100pF(typ.) Halogen free compliance

Fast reverse recovery time (trr max=10ns) Low switching noise Low leakage current and high reliability due to highly reliable planar structure

50V, 0.5A, Low IR, Monolithic Dual CP Common Cathode

Allowable Power Dissipation Tc=25 C 23 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C

SBT700-06RH. Schottky Barrier Diode 60V, 70A, VF; 0.66V Dual To-3PF-3L Cathode Common

MCH5541 PNP/NPN Bipolar Transistor ( )30V, ( )700mA, VCE(sat) ; ( 220)190mV (max)

ECH8663R. N-Channel Power MOSFET 30V, 8A, 20.5mΩ, Dual ECH8. Features. Specifications

3LP01SS. P-Channel Small Signal MOSFET 30V, 0.1A, 10.4Ω, Single SSFP. Features. Specifications. Low ON-resistance High-speed switching 2.

ATP114. P-Channel Power MOSFET 60V, 55A, 16mΩ, Single ATPAK. Features. Specifications. ON-resistance RDS(on)1=12mΩ(typ.) 4V drive Protection diode in

NSVF4020SG4/D. RF Transistor for Low Noise Amplifier

2SK4177. N-Channel Power MOSFET 1500V, 2A, 13Ω, TO-263-2L. Features. Specifications. ON-resistance RDS(on)=10Ω(typ.) 10V drive

Overview The LA1225MC is a Low-voltage operation (1.8V or higher) FM IF detector IC for the electronic tuning system.

ATP206. N-Channel Power MOSFET 40V, 40A, 16mΩ, Single ATPAK. Features. Specifications. Low ON-resistance 4.5V drive Halogen free compliance

NSVF5501SK RF Transistor for Low Noise Amplifier

6HP04MH. P-Channel Small Single MOSFET 60V, 370mA, 4.2Ω Single MCPH3. Features. Specifications Absolute Maximum Ratings at Ta=25 C

3LP01S. P-Channel Small Signal MOSFET 30V, 0.1A, 10.4Ω, Single SMCP. Features. Specifications. Low ON-resistance Ultrahigh-speed switching 2.

LA6581DM. Fan Motor Driver BLT Driver Single-Phase Full-Wave

Protection diode in Halogen free compliance

EMH2604. Power MOSFET 20V, 4A, 45mΩ, 20V, 3A, 85mΩ, Complementary Dual EMH8. Features. Specifications

LA1654C. Function RF amplifier, rectifier, detector, time code output, and standby circuit.

Single stage LNA for GPS Using the MCH4009 Application Note

NSVF4017SG4. RF Transistor for Low Noise Amplifier. 12 V, 100 ma, f T = 10 GHz typ.

ECH8660. Power MOSFET 30V, 4.5A, 59mΩ, 30V, 4.5A, 59mΩ, Complementary Dual ECH8. Features. Specifications

NSVJ3910SB3 N-Channel JFET 25V, 20 to 40mA, 40mS

2SJ661. P-Channel Power MOSFET 60V, 38A, 39mΩ, TO-262-3L/TO-263-2L. Features. Specifications. ON-resistance RDS(on)1=29.5mΩ(typ.

Value Parameter Symbol Conditions

Tc=25 C 3.5 W When mounted on ceramic substrate (600mm 2 0.8mm) 1.3 W Junction Temperature Tj 150 C Storage Temperature Tstg - 55 to +150 C

434MHz LNA for RKE Using the 2SC5245A Application Note

2SK3747. N-Channel Power MOSFET 1500V, 2A, 13Ω, TO-3PF-3L. Features. Specifications

LV8400V. Forward/Reverse Motor Driver. Bi-CMOS IC

High Speed Switching ESD Diode-Protected Gate C/W

NGTB20N60L2TF1G. N-Channel IGBT 600V, 20A, VCE(sat);1.45V TO-3PF-3L with Low VF Switching Diode

Value Parameter Symbol Conditions

2SK4124. N-Channel Power MOSFET 500V, 20A, 430mΩ, TO-3P-3L. Features. Specifications

CPH6354. Power MOSFET 60V, 100mΩ, 4A, Single P-Channel. Features. Specifications

LV8402V. 2ch Forward/Reverse Motor Driver. Bi-CMOS IC

Overview The LA5744MP is a separately-excited step-down switching regulator (variable type).

5LN01C. N-Channel Small Signal MOSFET 50V, 0.1A, 7.8Ω, Single CP. Features. Specifications. Low ON-resistance Ultrahigh-speed switching 2.

KSC2383 NPN Epitaxial Silicon Transistor

MCH6664. P-Channel Power MOSFET 30V, 1.5A, 325mΩ, Dual MCPH6. Features

LA4537MC. Specifications. Monolithic Linear IC Power Amplifier for 1.5V Headphone Stereos. Absolute Maximum Ratings at Ta = 25 C

LB1843V. Specifications. Monolithic Linear IC Low-saturation, current-controlled bidirectional motor driver. SSOP20 (225mil)

1.05 W epoxy board Operating temperature Topr 20 to +100 C Storage temperature Tstg 55 to +150 C

KSH122 / KSH122I NPN Silicon Darlington Transistor

BBS3002. P-Channel Power MOSFET 60V, 100A, 5.8mΩ, TO-263-2L/TO-263. Features. Specifications TO-263

2SK596S. JFET 20V, 150 to 350µA, 1.0mS, N-Channel. Features. Specifications

Built-in low voltage reset and thermal shutdown circuit Compact TSSOP-24 package

NGTB30N60L2WG. N-Channel IGBT With Low VF Switching Diode 600V, 30A, VCE(sat);1.4V

SMP3003. P-Channel Power MOSFET 75V, 100A, 8.0mΩ, TO-263-2L/TO-263. Features. Specifications TO-263

Built-in low voltage reset and thermal shutdown circuit Output ON resistance (Upper and lower total 0.27Ω; Ts=25 C, IO=1.0A)

MCH6662. Power MOSFET 20V, 160mΩ, 2A, Dual N-Channel. Features. Specifications

Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 600 V Gate-to-Source Voltage VGSS ±30 V

MCH3383. Power MOSFET 12V, 69mΩ, 3.5A, Single P-Channel

10 pf VDS=5V, VGS=0V, f=1mhz Reverse Transfer Capacitance Crss 3.0 pf Noise Figure NF VDS=5V, Rg=1kΩ, ID=1mA, f=1khz 1.5 db

This product is designed to ESD immunity < 200V*, so please take care when handling. * Machine Model

2SK4087LS-1E

MCH6331. Power MOSFET 30V, 98mΩ, 3.5A, Single P-Channel

Transcription:

Ordering number : ENA1839A MMIC Mixer, IIP3=1dBm, Gc=-0.dB@40MHz, MCPH6 http://onsemi.com Features Wide band : up to Ku band Low distortion : IIP3=20dBm (@ICC > 11mA) SMT, Ultra small package : 2.0 2.1 0.8mm High conversion gain : -0.dB (@40MHz) Low voltage available : 1.2V and above Halogen free compliance Specifications Absolute Maximum Ratings at Ta=2 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 8 V Collector-to-Emitter Voltage VCEO 6 V Emitter-to-Base Voltage VEBO 2 V Collector Current ICC 0 ma Max Power Dissipation PC 280 mw Operating Temperature Topr --40 to +8 C Storage Temperature Tstg -- to +10 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7022A-020 0.2 2.0 6 4 0.1 -TL-H Product & Package Information Package : MCPH6 JEITA, JEDEC : SC-88, SC-70-6, SOT-363 Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking 2.1 1.6 0 to 0.02 LOT No. LD LOT No. 0.2 1 2 3 0.6 0.3 TL 0.8 0.07 1 2 3 6 4 1 : Base2 2 : Collector1 3 : Collector2 4 : Emitter2 : Emitter1 6 : Base1 MCPH6 Equivalent Circuit 1 2 6 3 4 IT106 Semiconductor Components Industries, LLC, 2013 August, 2013 9012 TKIM/O0610AM TKIM TC-0000249 No. A1839-1/7

Recommended Operating Condition at Ta=2 C Ratings Parameter Symbol Conditions Unit min typ max VC1E1 1.2 3 6 V VC2E1 1.2 3 6 V Supply Voltage VC1E2 1.2 3 6 V VC2E2 1.2 3 6 V Electrical Characteristics at Ta=2 C Parameter Symbol Conditions Ratings min typ max Unit IC1B1O VC1B1=V 1 μa Collector Cutoff Current IC2B1O VC2B1=V 1 μa IC1B2O VC1B2=V 1 μa IC2B2O VC2B2=V 1 μa IE1B1O VE1B1=1V 1 μa Emitter Cutoff Current IE2B1O VE2B1=1V 1 μa IE1B2O VE1B2=1V 1 μa IE2B2O VE2B2=1V 1 μa hfe1 VC1E1=1V, IC1E1=3mA 20 120 DC Current Gain hfe2 VC2E1=1V, IC2E1=3mA 20 120 hfe3 VC1E2=1V, IC1E2=3mA 20 120 hfe4 VC2E2=1V, IC2E2=3mA 20 120 VCC=V, ICC=6mA, Conversion Gain *1 Gc f(rf)=40mhz, f(lo)=00mhz, --0. db P(RF)=--1dBm, P(LO)=--6dBm Input Intercept Point *1 IIP3 VCC=V, ICC=6mA, f(rf1)=40mhz, f(rf2)=41mhz, f(lo)=00mhz, 1 dbm P(RF1)=P(RF2)=--1dBm, P(LO)=--6dBm *1 : On evaluation board Ordering Information Device Package Shipping memo -TL-H MCPH6 3,000pcs./reel Pb Free and Halogen Free Measurement Circuit V CC RF LD IF 10kΩ VB LO IT107 No. A1839-2/7

Evaluation Board RF T1 IC T3 C4 IF C3 T2 R1 R2 V CC C1 C2 VB IC : T1 to T3 : C1 to C4 : R1 : 10kΩ R2 : 0Ω (short) LO IT108 Circuit Example (Self Bias) RF IF LD Rbias V CC LO IT109 No. A1839-3/7

10 P1dB -- ICC V CC =V f(rf)=40mhz f(lo)=00mhz 10 Gc -- ICC V CC =V f(rf)=40mhz f(lo)=00mhz P(RF)= --1dBm P1dB -- dbm 0 P(LO)= --3dBm --6dBm Gc -- db 0 P(LO)= --3dBm 0dBm --6dBm -- 0dBm -- --10 0 10 1 20 2 IT1976 2 Collector Current, I CC -- ma IIP3 -- ICC --10 0 10 1 20 2 Collector Current, I CC -- ma IT1977 IIP3 -- dbm 20 1 10 P(LO)= --6dBm --3dBm 0dBm V CC =V f(rf1)=40mhz f(rf2)=41mhz f(lo)=00mhz P(RF)= --1dBm 0 0 10 1 20 2 Collector Current, I CC -- ma IT1978 No. A1839-4/7

Embossed Taping Specification -TL-H No. A1839-/7

Outline Drawing -TL-H Land Pattern Example Mass (g) Unit 0.008 * For reference mm Unit: mm 0.4 2.1 0.6 0.6 0.6 No. A1839-6/7

ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No. A1839-7/7