FDBL86363-F85 N-Channel PowerTrench MOSFET 8 V, 4 A,. mω Features Typical R DS(on) =.5 mω at V GS = V, I D = 8 A Typical Q g(tot) = 3 nc at V GS = V, I D = 8 A UIS Capability RoHS Compliant Qualified to AEC Q Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator Primary Switch for V Systems G D S MOSFET Maximum Ratings T J = 5 C unless otherwise noted. Symbol Parameter Ratings Units V DSS Drain-to-Source Voltage 8 V V GS Gate-to-Source Voltage ± V Drain Current - Continuous (V I GS =) (Note ) T C = 5 C 4 D Pulsed Drain Current T C = 5 C See Figure 4 E AS Single Pulse Avalanche Energy (Note ) 5 mj P D Power Dissipation 357 W Derate Above 5 o C.38 W/ o C T J, T STG Operating and Storage Temperature -55 to + 75 o C R θjc Thermal Resistance, Junction to Case.4 o C/W R θja Maximum Thermal Resistance, Junction to Ambient (Note 3) 43 o C/W A Notes: : Current is limited by silicon. : Starting T J = 5 C, L =.5mH, I AS = 64A, V DD = 8V during inductor charging and V DD = V during time in avalanche. 3: R θja is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design, while R θja is determined by the board design. The maximum rating presented here is based on mounting on a in pad of oz copper. Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDBL86363 FDBL86363-F85 MO-99A - - - 5 Semiconductor Components Industries, LLC. August-7, Rev. Publication Order Number: FDBL86363-F85/D
Electrical Characteristics T J = 5 C unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics B VDSS Drain-to-Source Breakdown Voltage I D = 5μA, V GS = V 8 - - V I DSS Drain-to-Source Leakage Current On Characteristics Dynamic Characteristics V DS = 8V, T J = 5 o C - - μa V GS = V T J = 75 o C (Note 4) - - ma I GSS Gate-to-Source Leakage Current V GS = ±V - - ± na V GS(th) Gate to Source Threshold Voltage V GS = V DS, I D = 5μA. 3. 4. V R DS(on) Drain to Source On Resistance I D = 8A, V GS = V T J = 5 o C -.5. mω T J = 75 o C (Note 4) - 3. 4. mω C iss Input Capacitance - - pf V DS = 4V, V GS = V, C oss Output Capacitance - 54 - pf f = MHz C rss Reverse Transfer Capacitance - 7 - pf R g Gate Resistance f = MHz -.8 - Ω Q g(tot) Total Gate Charge at V V GS = to V V DD = 64V - 3 69 nc Q g(th) Threshold Gate Charge V GS = to V I D = 8A - 8 7 nc Q gs Gate-to-Source Gate Charge - 47 - nc Q gd Gate-to-Drain Miller Charge - 4 - nc Switching Characteristics t on Turn-On Time - - 33 ns t d(on) Turn-On Delay - 39 - ns t r Rise Time V DD = 4V, I D = 8A, - 63 - ns t d(off) Turn-Off Delay V GS = V, R GEN = 6Ω - 6 - ns t f Fall Time - 33 - ns t off Turn-Off Time - - 4 ns Drain-Source Diode Characteristics V SD Source-to-Drain Diode Voltage I SD =8A, V GS = V - -.5 V I SD = 4A, V GS = V - -. V t rr Reverse-Recovery Time I F = 8A, di SD /dt = A/μs, - 83 8 ns Q rr Reverse-Recovery Charge V DD =64V - 8 53 nc Note: 4: The maximum value is specified by design at T J = 75 C. Product is not tested to this condition in production.
Typical Characteristics POWER DISSIPATION MULTIPLIER...8.6.4.. 5 5 75 5 5 75 T C, CASE TEMPERATURE( o C) Figure. Normalized Power Dissipation vs. Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC. DUTY CYCLE - DESCENDING ORDER D =.5...5.. SINGLE PULSE ID, DRAIN CURRENT (A) 8 4 7 CURRENT LIMITED BY SILICON V GS = V 5 5 75 5 5 75 T C, CASE TEMPERATURE( o C) Figure. Maximum Continuous Drain Current vs. Case Temperature P DM t t NOTES: DUTY FACTOR: D = t /t PEAK T J = P DM x Z θja x R θja + T C. -5-4 -3 - - Figure 3. t, RECTANGULAR PULSE DURATION(s) Normalized Maximum Transient Thermal Impedance I DM, PEAK CURRENT (A) V GS = V T C = 5 o C FOR TEMPERATURES ABOVE 5 o C DERATE PEAK CURRENT AS FOLLOWS: I = I 75 - T C 5 SINGLE PULSE -5-4 -3 - - t, RECTANGULAR PULSE DURATION(s) Figure 4. Peak Current Capability 3
Typical Characteristics ms SINGLE PULSE TJ = MAX RATED ms TC = 5 o C ms.. 5 Figure 5. 3 5 5 5 OPERATION IN THIS AREA MAY BE LIMITED BY rds(on) us Forward Bias Safe Operating Area PULSE DURATION = 8μs DUTY CYCLE =.5% MAX V DD = 5V T J = 5 o C T J = 75 o C T J = -55 o C I AS, AVALANCHE CURRENT (A) If R = t AV = (L)(I AS )/(.3*RATED BV DSS - V DD ) If R t AV = (L/R)ln[(I AS *R)/(.3*RATED BV DSS - V DD ) +] STARTING T J = 5 o C STARTING T J = 5 o C... t AV, TIME IN AVALANCHE (ms) NOTE: Refer to ON Semiconductor Application Notes AN754 and AN755 Figure 6. Unclamped Inductive Switching Capability IS, REVERSE DRAIN CURRENT (A) 4 V GS = V T J = 75 o C T J = 5 o C 3 4 5 6 7 8 V GS, GATE TO SOURCE VOLTAGE (V)....4.6.8.. V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics 3 5 5 5 V GS 5V Top V 8V 7V 6V 5.5V 5V Bottom 8μs PULSE WIDTH Tj=5 o C 3 5 5 5 V GS 5V Top V 8V 7V 6V 5.5V 5V Bottom 8μs PULSE WIDTH Tj=75 o C 3 4 5 3 4 5 Figure 9. Saturation Characteristics Figure. Saturation Characteristics 4
Typical Characteristics r DS(on), DRAIN TO SOURCE ON-RESISTANCE (mω) NORMALIZED GATE THRESHOLD VOLTAGE 5 4 3 I D = 8A T J = 75 o C 4 6 8 V GS, GATE TO SOURCE VOLTAGE (V).5..9.6.3 Figure. PULSE DURATION = 8μs DUTY CYCLE =.5% MAX T J = 5 o C R DSON vs. Gate Voltage V GS = VDS I D = 5μA. -8-4 4 8 6 T J, JUNCTION TEMPERATURE( o C) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE.4..6..8 PULSE DURATION = 8μs DUTY CYCLE =.5% MAX I D = 8A V GS = V.4-8 -4 4 8 6 T J, JUNCTION TEMPERATURE( o C) Figure. Normalized R DSON vs. Junction Temperature..5..95 I D = 5mA.9-8 -4 4 8 6 T J, JUNCTION TEMPERATURE ( o C) Figure 3. Normalized Gate Threshold Voltage vs. Temperature Figure 4. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature CAPACITANCE (pf) f = MHz V GS = V C iss C oss C rss. V GS, GATE TO SOURCE VOLTAGE(V) 8 6 4 ID = 8A V DD = 3V 4V 48V 3 6 9 5 Q g, GATE CHARGE(nC) Figure 5. Capacitance vs. Drain to Source Voltage Figure 6. Gate Charge vs. Gate to Source Voltage 5
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