N-Channel.5V Specified PowerTrench TM MOSFET General Description This N-Channel.5V specified MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Applications DC/DC converter Load switch Features.7 A, V. R DS(ON) =.7 Ω @ V GS =.5 V R DS(ON) =. Ω @ V GS =.5 V. Low gate charge (3.5nC typical). High performance trench technology for extremely low R DS(ON). High power and current handling capability. D D S TM SuperSOT -3 G G S Absolute Maximum Ratings T A = 5 C unless otherwise noted Symbol Parameter Ratings Units V DSS Drain-Source Voltage V V GSS Gate-Source Voltage ± V I D Drain Current - Continuous (Note a).7 A - Pulsed P D Power Dissipation for Single Operation (Note a).5 W (Note b).6 T J, T stg Operating and Storage Junction Temperature Range -55 to +5 C Thermal Characteristics R θ JA Thermal Resistance, Junction-to-Ambient (Note a) 5 C/W R θ JC Thermal Resistance, Junction-to-Case (Note ) 75 C/W Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity 335 7 mm 3 units 999 Semiconductor Components Industries, LLC. October-7, Rev. 3 Publication Order Number: /D
Electrical Characteristics T A = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain-Source Breakdown Voltage V GS = V, I D = 5 µa V BVDSS T J Breakdown Voltage Temperature Coefficient I D = 5 µa,referenced to 5 C mv/ C I DSS Zero Gate Voltage Drain Current V DS = 6 V, V GS = V µa I GSSF Gate-Body Leakage Current, V GS = V, V DS = V na Forward I GSSR Gate-Body Leakage Current, Reverse V GS = - V, V DS = V - na On Characteristics (Note ) V GS(th) Gate Threshold Voltage V DS = V GS, I D = 5 µa..9.5 V VGS(th) Gate Threshold Voltage I D = 5 µa,referenced to 5 C -3 mv/ C T J Temperature Coefficient R DS(ON) Static Drain-Source V GS =.5 V, I D =.7 A.55.7 Ω On-Resistance V GS =.5 V, I D =.7 A,T J = 5 C V GS =.5 V, I D =.5 A.79.7.. I D(on) On-State Drain Current V GS =.5 V, V DS = 5 V A g FS Forward Transconductance V DS = 5 V, I D =.5 A 7 S Dynamic Characteristics C iss Input Capacitance V DS = V, V GS = V, 3 pf C oss Output Capacitance f =. MHz pf Reverse Transfer Capacitance pf C rss Switching Characteristics (Note ) t d(on) Turn-On Delay Time V DD = V, I D = A, 5 5 ns t r Turn-On Rise Time V GS =.5 V, R GEN = 6 Ω.5 7 ns t d(off) Turn-Off Delay Time ns t f Turn-Off Fall Time 3 ns Q g Total Gate Charge V DS = V, I D =.7 A, 3.5 5 nc Q gs Gate-Source Charge V GS =.5 V,.55 nc Gate-Drain Charge.95 nc Q gd Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current. A V SD Drain-Source Diode Forward Voltage V GS = V, I S =. A (Note ).7. V Notes: : R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a) 5 C/W when mounted on a. in Pad of oz. Cu. Scale : on letter size paper : Pulse Test: Pulse Width 3 µs, Duty Cycle.% b) 7 C/W when mounted on a minimum pad.
Typical Characteristics V GS =.5V 3.V.5V 3.5V 6.V.5V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE...6.. V GS =.V.5V 3.V 3.5V.V.5V.5.5.5 3 V DS, DRAIN TO SOURCE VOLTAGE (V). 6 Figure. On-Region Characteristics. Figure. On-Resistance Variation with Drain Current and Gate Voltage. R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE.6... I D =.7A V GS =.5V R DS(ON), ON-RESISTANCE (OHM)...6... T A = 5 o C T A = 5 o C I D =.5A.6-5 -5 5 5 75 5 5 T J, JUNCTION TEMPERATURE ( o C) 3 5 V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure. On-Resistance Variation with Gate-to-Source Voltage. V DS = 5V T A = -55 o C 5 o C 5 o C V GS = V 6 I S, REVERSE DRAIN CURRENT (A)... T A = 5 o C 5 o C -55 o C 3 V GS, GATE TO SOURCE VOLTAGE (V)....6... V SD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 3
Typical Characteristics (continued) V GS, GATE-SOURCE VOLTAGE (V) 5 I D =.7A V DS = 5V V 5V 3.5.5.5 3 3.5 Q g, GATE CHARGE (nc) CAPACITANCE (pf) 5 3 C ISS C OSS C RSS 6 V DS, DRAIN TO SOURCE VOLTAGE (V) f = MHz V GS = V Figure 7. Gate Charge Characteristics. Figure. Capacitance Characteristics.. R DS(ON) LIMIT V GS =.5V SINGLE PULSE R θja = 7 o C/W T A = 5 o C ms ms s s DC ms POWER (W) 6 SINGLE PULSE R θja=7 o C/W TA=5 o C.. V DS, DRAIN-SOURCE VOLTAGE (V).... SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE.5...5...5. D =.5...5.. Single Pulse..... 3 t, TIME (sec) P(pk) R θja (t) = r(t) * R θja R θja = 7 C/W t t T J - T A = P * R θja (t) Duty Cycle, D = t /t Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note b. Transient themal response will change depending on the circuit board design.
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 95 E. 3nd Pkwy, Aurora, Colorado USA Phone: 33 675 75 or 3 36 Toll Free USA/Canada Fax: 33 675 76 or 3 367 Toll Free USA/Canada Email: orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: 955 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 33 79 9 Japan Customer Focus Center Phone: 3 57 5 ON Semiconductor Website: Order Literature: http:///orderlit For additional information, please contact your local Sales Representative