Silicon N-channel IGBT V F version Spec.No.IGBT-SP-8 R8 P FEATURES Soft switching behavior, low switching loss & low conduction loss : Soft low-injection punch-through Advanced Trench High conductivity IGBT. Low driving power due to low input capacitance with trench MOS gate. Low noise recovery: Ultra soft fast recovery diode. High Current rate Package. Low Rth(j-c) & low stray inductance. RoHS High thermal fatigue durability: (delta Tc=7K, N,cycles) ABSOLUTE MAXIMUM RATINGS (Tc= o C) Item Symbol Unit Collector Emitter Voltage V CES V, Gate Emitter Voltage V GES V Collector Current DC I C,8 A ms I CRM,6 Forward Current DC I F,8 A ms I FRM,6 Junction Temperature T j o C - ~ + Storage Temperature T stg o C - ~ + Isolation Voltage V ISO V RMS 6,(AC minute) Screw Torque Terminals (M/M8) - / () N m Mounting (M6) - 6 () Notes: () Recommended Value.8./ + -N m ELECTRICAL CHARACTERISTICS () Recommended Value..N m Item Symbol Unit Min. Typ. Max. Test Conditions Collector Emitter Cut-Off Current I CES ma - -.6 - o C V CE=,V, V GE=V, Tj= o C V CE=,V, V GE=V, Tj= Gate Emitter Leakage Current I GES na - - + V GE= V, V CE=V, Tj= o C Collector Emitter Saturation Voltage V CEsat V..8. I C=8A, V GE=V, Tj= o C Gate Emitter Threshold Voltage V GE(th) V. 6. 7. V CE=V, I C=8mA, Tj= o C Input Capacitance C ies nf - - V CE=V, V GE=V, f=khz, Tj= o C Internal Gate Resistance r g Ω -. - V CE=V, V GE=V, f=khz, Tj= o C Rise Time t r -. - V CC=,8V, Ic=8A Switching Times Turn On Time t on -. - Ls=8nH s Fall Time t f -.8 - R G(on/off)=.7Ω/.6Ω () Turn Off Time t off -. - V GE= V, Tj= o C Peak Forward Voltage Drop V F V..6.9 IF=8A, V GE=V, Tj= o C Reverse Recovery Time t rr s -.7 - V CC=,8V, IF=8A, Ls =8nH Tj= o C Turn On Loss E on J/P -.7 - V CC=,8V, Ic=8A, Ls =8nH Turn Off Loss E off J/P -. - Reverse Recovery Loss E rr J/P -. - Stray inductance module L SCE nh - 7 - R G(on/off)=.7Ω/.6Ω () V GE= V, Tj= o C Thermal Impedance IGBT Rth(j-c) - -.67 K/W Junction to case FWD Rth(j-c) - -. Contact Thermal Impedance Rth(c-f) K/W -. - Case to fin I t value I t ka s - - T j, start= o C, ms, V R=V, half-sinewave Notes: () R G value is a test condition value for evaluation, not recommended value. Please, determine the suitable R G value by measuring switching behaviors. * Please contact our representatives at order. * For improvement, specifications are subject to change without notice. * For actual application, please confirm this spec sheet is the newest revision. * ELECTRICAL CHARACTERISTIC values according to IEC 677 IEC 677 9
Forward Curent, IF (A) Collector Current, Ic (A) Collector Current, Ic (A) Spec.No.IGBT-SP-8 R8 P STATIC CHARACTERISTICS 6 Tc= o C VGE=V V Typical 6 VGE=V Typical V V V 8 8 9V 9V 6 6 7V 6 Collector to Emitter Voltage, VCE(V) Collector Current vs.collector to Emitter Voltage 7V 6 Collector to Emitter Voltage, VCE(V) Collector Current vs.collector to Emitter Voltage 6 Typical VGE=V Tj= o C Tj= o C 8 6 Forward Voltage, VF(V) Forward Voltage of free-wheeling diode
Reverse Recovery Loss, Err (J/pulse) Switching time, ton,tr,toff,tf,trr (us) Turn-on Loss, Eon (J/pulse) Turn-off Loss, Eoff (J/pulse) Spec.No.IGBT-SP-8 R8 P DYNAMIC CHARACTERISTICS 9 8 Vcc=8V RG(on)=.7Ω Ls=8nH 9 8 Vcc=8V RG(off)=.6Ω Ls=8nH 7 7 6 6 6,,8,,,6 Collector Current, Ic (A) Turn-on Loss vs.collector Current 6,,8,,,6 Collector Current, Ic (A) Turn-off Loss vs.collector Current Vcc=8V RG(on)=.7Ω Ls=8nH Vcc=8V RG(on/off)=.7Ω/.6Ω Ls=8nH toff ton tf trr 6,,8,,,6 Collector Current, IF (-Ic) (A) Recovery Loss vs.collector Current tr 6,,8,,,6 Collector Current, IC,IF (A) Switching time vs.collector Current
Reverse Recovery Loss, Err (J/pulse) Turn-on Loss, Eon (J/pulse) Turn-off Loss, Eoff (J/pulse) Spec.No.IGBT-SP-8 R8 P 9 8 Vcc=8V IC=8A Ls=8nH Vcc=8V IC=8A Ls=8nH 7 6 Gate Resistance, RG (Ω) Turn-on Loss vs.gate Resistance Gate Resistance, RG (Ω) Turn-off Loss vs.gate Resistance Vcc=8V IC=8A Ls=8nH Gate Resistance, RG (Ω) Recovery Loss vs.gate Resistance
Collector Current, IC (A) IR (A) Cies, Coes, Cres (nf) VGE (V) Capacitance vs. Collector to Emitter Voltage Tj= o C f=khz QG-VGE CURVE Conditions:Ls=8nH, VCC=8V, IC=8A,VGE=+/-V, Tj= o C Spec.No.IGBT-SP-8 R8 P Cies Coes - Cres -.... Collector to Emitter Voltage, VCE (V) Capacitance vs. Collector to Emitter Voltage - -8-6 - - 6 8 QG ( C) QG-VGE curve Safe Operating Area Vcc V, IC 6A, RG(off).6, VGE=±V, - o C Tj o C, Ls 8nH, on pulse width us Vcc V, IF 6A, di/dt ka/us, - o C Tj o C, Ls 8nH, on pulse width us Pmax=.6MW IC( to be turned off ) Ic VCE( spike Voltage ) Vce Definition of RBSOA waveform t Collector to Emitter Voltage, VCE (V) *Defined as auxiliary terminal VR (V) (Measured at auxiliary terminal) *Defined as auxiliary terminal Reverse bias safe operation area(rbsoa) Reverse recovery safe operation area(rrsoa)
Transient thermal impedance : Zth(j-c) (K/W) TRANSIENT THERMAL IMPEDANCE Spec.No.IGBT-SP-8 R8 P6. Maximum. FWD IGBT..... Time : t(s) Curve approximation model Transient Thermal Impedance Curve ( Zth[n]*(-exp(-t/ th[n]))) n Unit th[n].... sec Zth[n,IGBT].6E- 7.88E-.E-.9E- K/W Zth[n,Diode].6E-.6E- 6.7E-.E- K/W
Spec.No.IGBT-SP-8 R8 P7 OUTLINE DRAWINGS Unit in mm Label Weight :,g Fig. Outline Drawings C C C C G E E E E Fig. Circuit diagram
Spec.No.IGBT-SP-8 R8 P8 HITACHI POWER SEMICONDUCTORS Notices. The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact Hitachi sales department for the latest version of this data sheets.. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use.. In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users fail-safe precautions or other arrangement. Or consult Hitachi s sales department staff.. In no event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user s units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets.. In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 6. No license is granted by this data sheets under any patents or other rights of any third party or Hitachi Power Semiconductor Device, Ltd. 7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part, without the expressed written permission of Hitachi Power Semiconductor Device, Ltd. 8. The products (technologies) described in this data sheets are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety not are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. For inquiries relating to the products, please contact nearest overseas representatives that is located Inquiry portion on the top page of a home page. Hitachi power semiconductor home page address http://www.hitachi-power-semiconductor-device.co.jp/en/