FMA908PZ Single P-Channel PowerTrench MOSFET -2 V, -2 A, 2.5 mω Features Max r S(on) = 2.5 mω at V GS = -4.5 V, I = -2 A Max r S(on) = 8 mω at V GS = -2.5 V, I = -0 A Max r S(on) = 28 mω at V GS = -.8 V, I = -8 A Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm HBM ES protection level > 2.8 kv typical (Note 3) Free from halogenated compounds and antimony oxides RoHS Compliant rain Pin G Source General escription February 204 This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener diode protection against ES. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. Bottom rain Contact FMA908PZ Single P-Channel PowerTrench MOSFET S MicroFET 2X2 (Bottom View) G S MOSFET Maximum Ratings T A = 25 C unless otherwise noted Symbol Parameter Ratings Units V S rain to Source Voltage -2 V V GS Gate to Source Voltage ±8 V rain Curre -Continuous T A = 25 C (Note a) -2 I -Pulsed -40 A Power issipation T A = 25 C (Note a) 2.4 P Power issipation T A = 25 C (Note b) 0.9 W T J, T STG Operating and Storage Junction Temperature Range -55 to +50 C Thermal Characteristics R θja Thermal Resistance, Junction to Ambient (Note a) 52 R θja Thermal Resistance, Junction to Ambient (Note b) 45 Package Marking and Ordering Information C/W evice Marking evice Package Reel Size Tape Width Quantity 908 FMA908PZ MicroFET 2X2 7 2 mm 3000 units FMA908PZ Rev.E3
Electrical Characteristics T J = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV SS rain to Source Breakdown Voltage I = -250 μa, V GS = 0 V -2 V ΔBV SS Breakdown Voltage Temperature ΔT J Coefficient I = -250 μa, referenced to 25 C -0 mv/ C I SS Zero Gate Voltage rain Current V S = -9.6 V, V GS = 0 V - μa I GSS Gate to Source Leakage Current V GS = ±8 V, V S = 0 V ±0 μa On Characteristics V GS(th) Gate to Source Threshold Voltage V GS = V S, I = -250 μa -0.4-0.6 - V ΔV GS(th) ΔT J Gate to Source Threshold Voltage Temperature Coefficient ynamic Characteristics Switching Characteristics I = -250 μa, referenced to 25 C 2.8 mv/ C V GS = -4.5 V, I = -2 A 0 2.5 V GS = -2.5 V, I = -0 A 3 8 r S(on) Static rain to Source On Resistance V GS = -.8 V, I = -8 A 8 28 mω V GS = -4.5 V, I = -2 A, T J = 25 C 3 6 g FS Forward Transconductance V = -5 V, I = -2 A 63 S C iss Input Capacitance 2638 3957 pf V S = -6 V, V GS = 0 V, C oss Output Capacitance 649 974 pf f = MHz C rss Reverse Transfer Capacitance 602 903 pf t d(on) Turn-On elay Time 2 ns t V = -6 V, I = -2 A, r Rise Time 2 23 ns V GS = -4.5 V, R GEN = 6 Ω t d(off) Turn-Off elay Time 3 223 ns t f Fall Time 7 2 ns Q g Total Gate Charge V GS = -4.5 V, V = -6 V, 24 34 nc Q gs Gate to Source Charge I = -2 A 3.4 nc Q gd Gate to rain Miller Charge 5.3 nc FMA908PZ Single P-Channel PowerTrench MOSFET rain-source iode Characteristics V V S Source to rain iode Forward Voltage GS = 0 V, I S = -2 A (Note 2) -0.6 -.2 V V GS = 0 V, I S = -2 A (Note 2) -0.8 -.2 V t rr Reverse Recovery Time 26 42 ns I F = -2 A, di/dt = 00 A/μs Q rr Reverse Recovery Charge 8.5 7 nc NOTES:. R θja is determined with the device mounted on a in 2 pad 2 oz copper pad on a.5 x.5 in. board of FR-4 material. R θjc is guaranteed by design while R θca is determined by the user's board design. a. 52 C/W when mounted on a in 2 pad of 2 oz copper. b. 45 C/W when mounted on a minimum pad of 2 oz copper. SS SF S F G SS SF S F G 2. Pulse Test: Pulse Width < 300 μs, uty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ES. No gate overvoltage rating is implied. FMA908PZ Rev.E3 2
Typical Characteristics T J = 25 C unless otherwise noted -I, RAIN CURRENT (A) NORMALIZE RAIN TO SOURCE ON-RESISTANCE 40 30 20 0 V GS = -.5 V PULSE URATION = 80 μs UTY CYCLE = 0.5% MAX 0 0.0 0.5.0.5 2.0 -V S, RAIN TO SOURCE VOLTAGE (V) Figure..4.3.2..0 0.9 0.8 I = -2A V GS = -4.5V V GS = -.8 V V GS = -4.5 V V GS = -3 V V GS = -2.5 V NORMALIZE RAIN TO SOURCE ON-RESISTANCE 0 0 0 20 30 40 -I, RAIN CURRENT (A) On-Region Characteristics Figure 2. Normalized On- Resistance vs rain Current and Gate Voltage 0.7-75 -50-25 0 25 50 75 00 25 50 T J, JUNCTION TEMPERATURE ( o C) rs(on), RAIN TO SOURCE ON-RESISTANCE (mω) 60 40 20 3 2 V GS = -.5 V V GS = -.8 V PULSE URATION = 80 μs UTY CYCLE = 0.5% MAX V GS = -2.5 V T J = 25 o C T J = 25 o C I = -2 A V GS = -3 V V GS = -4.5 V PULSE URATION = 80 μs UTY CYCLE = 0.5% MAX 0.0.5 2.0 2.5 3.0 3.5 4.0 4.5 -V GS, GATE TO SOURCE VOLTAGE (V) FMA908PZ Single P-Channel PowerTrench MOSFET Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage -I, RAIN CURRENT (A) 40 30 20 0 PULSE URATION = 80 μs UTY CYCLE = 0.5% MAX V S = -5 V T J = 50 o C T J = 25 o C T J = -55 o C -IS, REVERSE RAIN CURRENT (A) 00 0 0. 0.0 V GS = 0 V T J = 50 o C T J = 25 o C T J = -55 o C 0 0.0 0.5.0.5 2.0 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics 0.00 0.0 0.4 0.8.2 -V S, BOY IOE FORWAR VOLTAGE (V) Figure 6. Source to rain iode Forward Voltage vs Source Current FMA908PZ Rev.E3 3
Typical Characteristics T J = 25 C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE (V) -Ig, GATE LEAKAGE CURRENT (A) 4.5 3.0.5 I = -2A 0.0 0 5 0 5 20 25 Q g, GATE CHARGE (nc) Figure 7. 0-3 V S = 0 V 0-4 0-5 0-6 0-7 0-8 0-9 V = -6V V = -4V V = -8V 300 0. 0 20 -V S, RAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs rain to Source Voltage T J = 25 o C T J = 25 o C 0-0 0 5 0 5 -V GS, GATE TO SOURCE VOLTAGE (V) CAPACITANCE (pf) -I, RAIN CURRENT (A) 5000 000 60 0 f = MHz V GS = 0 V C iss C oss C rss ms 0 ms THIS AREA IS LIMITE BY r S(on) 00 ms SINGLE PULSE s 0. T 0 s J = MAX RATE R θja = 45 o C/W C CURVE BENT TO T A = 25 o C MEASURE ATA 0.0 0.0 0. 0 50 -V S, RAIN to SOURCE VOLTAGE (V) FMA908PZ Single P-Channel PowerTrench MOSFET Figure 9. Gate Leakage Current vs Gate to Source Voltage Figure 0. Gate Leakage Current vs Gate to Source Voltage P (PK), PEAK TRANSIENT POWER (W) 00 0 0. 0-3 0-2 0-0 00 000 t, PULSE WITH (sec) Figure. Single Pulse Maximum Power issipation SINGLE PULSE R θja = 45 o C/W T A = 25 o C FMA908PZ Rev.E3 4
Typical Characteristics T J = 25 C unless otherwise noted NORMALIZE THERMAL IMPEANCE, Z θja 2 0. UTY CYCLE-ESCENING ORER = 0.5 0.2 0. 0.05 0.02 0.0 SINGLE PULSE R θja = 45 o C/W (Note b) 0.0 0-3 0-2 0-0 00 000 t, RECTANGULAR PULSE URATION (sec) Figure 2. Junction-to-Ambient Transient Thermal Response Curve P M t t 2 NOTES: UTY FACTOR: = t /t 2 PEAK T J = P M x Z θja x R θja + T A FMA908PZ Single P-Channel PowerTrench MOSFET FMA908PZ Rev.E3 5
2X 0.05 C 2.05 A B.00 6 5 4 (0.20) (0.45) 2.05.05 0.66 2.30.35 PIN # LOCATION TOP VIEW 2X 0.05 C 0.475(6X) 2 3 0.65 0.40 (6X) 0.8 ±0.05 0.0 C 0.08 C 0.025±.025 PIN # IENT SEATING PLANE 0.265±0.065 (6X) (0.50) SIE VIEW 2 3 6 4 0.20±0.05 2.05±0.05 0.90±0.0 (0.200) 4X NOTES: 0.65 7 8 5.30 C (0.5) (0.50) (0.30) 0.6±0.05.00±0.05 2.05±0.05 0.30±0.05(6X) 0.0 C A B 0.05 C RECOMMENE LAN PATTERN Pin # Function rain 2 rain 3 Gate 4 Source 5 rain 6 rain 7 rain 8 Source A. PACKAGE OES NOT CONFORM TO ANY JEEC STANAR. B. IMENSIONS ARE IN MILLIMETERS. C. IMENSIONS AN TOLERANCES PER ASME Y4.5M, 2009.. LAN PATTERN RECOMMENATION IS EXISTING INUSTRY LAN PATTERN. E. RAWING FILENAME: MKT-FMA908Prev. F. REFERENCE RAWING NO : MKT-MLP06Prev. BOTTOM VIEW
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