FDD35H Dual N & P-Channel PowerTrench MOSFET N-Channel: V, 3.9A, mω P-Channel: -V, -9.A, 9mΩ Features Q: N-Channel Max r DS(on) = mω at V GS = V, I D =.3A Max r DS(on) = mω at V GS = V, I D =.A : P-Channel Max r DS(on) = 9mΩ at V GS = -V, I D = -.A Max r DS(on) = mω at V GS = -.5V, I D = -.A % UIL Tested RoHS Compliant D/D General Description These dual N and P- Channel enhancement mode Power MOSFETs are produced using ON Semiconductor s advanced PowerTrench process that has been especially tailored minimize on -state resistance and yet maintain superior switching performance. Applications Inverter H-Bridge D D to G S Dual DPAK L G S G S N-Channel G S P-Channel MOSFET Maximum Ratings T C = 5 C unless otherwise noted Symbol Parameter Q Units V DS Drain to Source Voltage - V V GS Gate to Source Voltage ± ± V Drain Current - Continuous T C = 5 C 3.9-9. I D - Continuous T A = 5 C.3 -. Thermal Characteristics - Pulsed - Power Dissipation for Single Operation T C = 5 C (Note ) 35 3 P D T A = 5 C (Note a) 3. T A = 5 C (Note b).3 E AS Single Pulse Avalanche Energy (Note 3) 37 5 mj T J, T STG Operating and Storage Junction Temperature Range -55 to +5 C A W R θjc Thermal Resistance, Junction to Case, Single Operation for Q (Note ) 3.5 R θjc Thermal Resistance, Junction to Case, Single Operation for (Note ) 3.9 Package Marking and Ordering Information C/W Device Marking Device Package Reel Size Tape Width Quantity FDD35H FDD35H TO-5-L 3 mm 5 units Semiconductor Components Industries, LLC. October-7, Rev. Publication Order Number: FDD35H/D
Electrical Characteristics T J = 5 C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Off Characteristics BV DSS BV DSS T J I DSS On Characteristics Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Dynamic Characteristics I D =5µA, V GS = V I D = -5µA, V GS = V I D = 5µA, referenced to 5 C I D = -5µA, referenced to 5 C V DS = V, V GS = V V DS = -V, V GS = V I GSS Gate to Source Leakage Current V GS = ±V, V DS = V V GS(th) V GS(th) T J r DS(on) g FS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance V GS = V DS, I D = 5µA V GS = V DS, I D = -5µA I D = 5µA, referenced to 5 C I D = -5µA, referenced to 5 C V GS = V, I D =.3A V GS =.V, I D =.A V GS = V, I D =.3A, T J = 5 C V GS = -V, I D = -.A V GS = -.5V, I D = -.A V GS = -V, I D = -.A, T J = 5 C V DD = V, I D =.3A V DD = -5V, I D = -.A C iss Input Capacitance Q V DS = V, V GS = V, f = MHZ C oss C rss Output Capacitance Reverse Transfer Capacitance R g Gate Resistance f = MHz V DS = -V, V GS = V, f = MHZ Q Q Q Q Q Q Q Q Q Q Q Q -. -. -7. -. -.7. 7 53 59 5. 5 5 7 5.7 7. mv - ± ±. -3. 5 9 3 75 7 mv/ C V µa / C na na V mω S pf pf pf Ω Switching Characteristics t d(on) Turn-On Delay Time Q V DD = V, I D =.3A, t r Rise Time V GS = V, R GEN = Ω t d(off) t f Turn-Off Delay Time Fall Time V DD = -V, I D = -.A, V GS = -V, R GEN = Ω Q g(tot) Q gs Total Gate Charge Gate to Source Charge Q V GS = V, V DD = V, I D =.3A Q gd Gate to Drain Miller Charge V GS = -V, V DD = -V, I D = -.A Q Q Q Q Q Q Q 7 3 5 5 3.3.9 3..9 3 9 ns ns ns ns nc nc nc
Electrical Characteristics T J = 5 C unless otherwise noted Drain-Source Diode Characteristics V SD Source to Drain Diode Forward Voltage V GS = V, I S =.A (Note ) V GS = V, I S = -.A (Note ) t rr Reverse Recovery Time Q I F =.3A, di/dt = A/s Q rr Reverse Recovery Charge I F = -.A, di/dt = A/s Notes: Symbol Parameter Test Conditions Type Min Typ Max Units. R θja is determined with the device mounted on a in pad oz copper pad on a.5 x.5 in. board of FR- material. R θjc is guaranteed by design while R θca is determined by the user's board design. Q a. C/W when mounted on a in pad of oz copper Scale : on letter size paper a. C/W when mounted on a in pad of oz copper Q Q Q. -. 9 3 3. -. 5 b. 9 C/W when mounted on a minimum pad of oz copper b. 9 C/W when mounted on a minimum pad of oz copper V ns nc Scale : on letter size paper. Pulse Test: Pulse Width < 3µs, Duty cycle <.%. 3. Starting T J = 5 C, N-ch: L = 3mH, I AS = 5A, V DD = V, V GS = V; P-ch: L = 3mH, I AS = -A, V DD = -V, V GS = -V. 3
Typical Characteristics (Q N-Channel) T J = 5 C unless otherwise noted ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 5 5 3......... Figure. V GS = V I D =.3A V GS = V V GS = V V GS =.5V PULSE DURATION = Xµs DUTY CYCLE = X%MAX V DS, DRAIN TO SOURCE VOLTAGE (V) V GS = V V GS = 3.5V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE.5 5 5 On Region Characteristics Figure. Normalized On-Resistance vs Drain Current and Gate Voltage. -75-5 -5 5 5 75 5 5 T J, JUNCTION TEMPERATURE ( o C) rds(on), DRAIN TO SOURCE ON-RESISTANCE (mω). 3.5 3..5..5. 3 V GS = 3.5V V GS = V I D, DRAIN CURRENT(A) I D =.3A PULSE DURATION = µs DUTY CYCLE =.5%MAX V GS =.5V T J = 5 o C T J = 5 o C V GS = V V GS = V PULSE DURATION = µs DUTY CYCLE =.5%MAX V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure. On-Resistance vs Gate to Source Voltage I D, DRAIN CURRENT (A) 5 5 PULSE DURATION = µs DUTY CYCLE =.5%MAX V DS = 5V T J = 5 o C T J = -55 o C T J = 5 o C IS, REVERSE DRAIN CURRENT (A).. V GS = V T J = 5 o C T J = 5 o C T J = -55 o C 3 5 V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics........ V SD, BODY DIODE FORWARD VOLTAGE (V) Figure. Source to Drain Diode Forward Voltage vs Source Current
Typical Characteristics (Q N-Channel) T J = 5 C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) IAS, AVALANCHE CURRENT(A) I D =.3A Figure 7. 5 3 V DD = 3V V DD = V V DD = 5V Q g, GATE CHARGE(nC). V DS, DRAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure. Capacitance vs Drain to Source Voltage T J = 5 o C T J = 5 o C.. t AV, TIME IN AVALANCHE(ms) CAPACITANCE (pf) I D, DRAIN CURRENT (A) 5 9 3 f = MHz V GS = V R θjc = 3.5 o C/W V GS = V V GS = V C iss C oss C rss 5 5 75 5 5 T C, CASE TEMPERATURE ( o C) Figure 9. Unclamped Inductive Switching Capability Figure. Maximum Continuous Drain Current vs Case Temperature ID, DRAIN CURRENT (A) 5 THIS AREA IS LIMITED BY r DS(on) ms T J = MAX RATED ms. R θjc = 3.5 o C/W ms T C = 5 o C DC.5.5 V DS, DRAIN to SOURCE VOLTAGE (V) Figure. Forward Bias Safe Operating Area us P(PK), PEAK TRANSIENT POWER (W) 5 3 V GS = V R θjc = 3.5 o C/W T C = 5 o C - -5 - -3 - - t, PULSE WIDTH (sec) Figure. Single Pulse Maximum Power Dissipation 5
Typical Characteristics (Q N-Channel) T J = 5 C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, Z θjc NORMALIZED THERMAL IMPEDANCE, Z θja.. DUTY CYCLE-DESCENDING ORDER D =.5...5.. R θjc = 3.5 o C/W. - -5 - -3 - -.. DUTY CYCLE-DESCENDING ORDER D =.5...5.. t, RECTANGULAR PULSE DURATION (sec) Figure 3. Transient Thermal Response Curve R θja = 9 o C/W (Note b) P DM t t NOTES: DUTY FACTOR: D = t /t PEAK T J = P DM x Z θjc x R θjc + T C P DM t t NOTES: DUTY FACTOR: D = t /t PEAK T J = P DM x Z θja x R θja + T A. - -3 - - t, RECTANGULAR PULSE DURATION (sec) Figure. Transient Thermal Response Curve
Typical Characteristics ( P-Channel) T J = 5 C unless otherwise noted -ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE V GS = -V V GS = -.5V V GS = -3.5V PULSE DURATION = µs DUTY CYCLE =.5%MAX V GS = -3V V GS = -.5V 3 5 -V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 5. On- Region Characteristics........ I D = -.A V GS = -V. -75-5 -5 5 5 75 5 5 T J, JUNCTION TEMPERATURE ( o C) Figure 7. Normalized On-Resistance vs Junction Temperature NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rds(on), DRAIN TO.5..5. V GS = -.5V V GS = -3V PULSE DURATION = µs DUTY CYCLE =.5%MAX V GS = -3.5V.5 -I D, DRAIN CURRENT(A) V GS = -.5V V GS = -V Figure. Normalized on-resistance vs Drain Current and Gate Voltage SOURCE ON-RESISTANCE (mω) 5 3 I D = -.A PULSE DURATION = µs DUTY CYCLE =.5%MAX T J = 5 o C T J = 5 o C -V GS, GATE TO SOURCE VOLTAGE (V) Figure. On-Resistance vs Gate to Source Voltage -ID, DRAIN CURRENT (A) PULSE DURATION = µs DUTY CYCLE =.5%MAX V DS = -5V T J = 5 o C T J = 5 o C T J = -55 o C 3 5 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 9. Transfer Characteristics -IS, REVERSE DRAIN CURRENT (A).. V GS = V T J = 5 o C T J = 5 o C T J = -55 o C........ -V SD, BODY DIODE FORWARD VOLTAGE (V) Figure. Source to Drain Diode Forward Voltage vs Source Current 7
Typical Characteristics ( P-Channel)T J = 5 C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) -IAS, AVALANCHE CURRENT(A) I D = -.A V DD = -3V V DD = -V V DD = -5V 3 Q g, GATE CHARGE(nC) Figure. Gate Charge Characteristics T J = 5 o C T J = 5 o C. t AV, TIME IN AVALANCHE(ms) CAPACITANCE (pf) -I D, DRAIN CURRENT (A) f = MHz V GS = V C iss C oss C rss. -V DS, DRAIN TO SOURCE VOLTAGE (V) Figure. Capacitance vs Drain to Source Voltage R θjc = 3.9 o C/W V GS = -.5V V GS = -V 5 5 75 5 5 T C, CASE TEMPERATURE ( o C) Figure 3. Unclamped Inductive Switching Capability Figure. Maximum Continuous Drain Current vs Case Temperature -ID, DRAIN CURRENT (A)..5 THIS AREA IS LIMITED BY r ds(on) T J = MAX RATED R θjc = 3.9 o C/W T C = 5 o C -V DS, DRAIN to SOURCE VOLTAGE (V) Figure 5. Forward Bias Safe Operating Area us ms ms ms DC P(PK), PEAK TRANSIENT POWER (W) V GS = -V FOR TEMPERATURES ABOVE 5 o C DERATE PEAK CURRENT AS FOLLOWS: X T I = I x 5 R θjc = ------------------- 3.9 o C/W 5 T X = 5 o C - -5 - -3 - - t, PULSE WIDTH (s) Figure. Single Pulse Maximum Power Dissipation
Typical Characteristics ( P-Channel)T J = 5 C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, Z θjc NORMALIZED THERMAL IMPEDANCE, Z θja.. DUTY CYCLE-DESCENDING ORDER D =.5...5.. R θjc = 3.9 o C/W. - -5 - -3 - -.. DUTY CYCLE-DESCENDING ORDER D =.5...5.. t, RECTANGULAR PULSE DURATION (s) Figure 7. Transient Thermal Response Curve R θja = 9 o C/W (Note b) P DM t t NOTES: DUTY FACTOR: D = t /t PEAK T J = P DM x Z θjc x R θjc + T C P DM t t NOTES: DUTY FACTOR: D = t /t PEAK T J = P DM x Z θja x R θja + T A. - -3 - - t, RECTANGULAR PULSE DURATION (sec) Figure. Transient Thermal Response Curve 9
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 95 E. 3nd Pkwy, Aurora, Colorado USA Phone: 33 75 75 or 3 3 Toll Free USA/Canada Fax: 33 75 7 or 3 37 Toll Free USA/Canada Email: orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: 955 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 33 79 9 Japan Customer Focus Center Phone: 3 57 5 ON Semiconductor Website: Order Literature: http:///orderlit For additional information, please contact your local Sales Representative