Optocoupler, Phototransistor Output, High Temperature Features Extra low coupling capacity - typical.2 pf High Common Mode Rejection Low temperature coefficient of CTR CTR offered in 9 groups Reinforced Isolation provides circuit protection against electrical shock (Safety Class II) Lead-free component Component in accordance to RoHS 22/95/EC and WEEE 22/96/EC 797_ C E 4 3 2 A C C V D E e3 Pb Pb-free Agency Approvals UL577, File No. E76222 System Code U, Double Protection CSA 22.2 bulletin 5A, Double Protection BSI: EN 665:22, EN 695:2 Certificate No. 78 and 742 DIN EN 6747-5-2 (VDE884) DIN EN 6747-5-5 pending FIMKO Applications Switch-mode power supplies Line receiver Computer peripheral interface Microprocessor system interface Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): For appl. class I - IV at mains voltage 3 V For appl. class I - III at mains voltage 6 V according to DIN EN 6747-5-2(VDE884)/ DIN EN 6747-5-5 pending, table 2. Description The TCET. consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Isolation materials according to UL94-VO Pollution degree 2 (DIN/VDE / resp. IEC 6664) Climatic classification 55//2 (IEC 668 part ) Rated impulse voltage (transient overvoltage) V IOTM = 8 kv peak Isolation test voltage (partial discharge test voltage) V pd =.6 kv Rated isolation voltage (RMS includes DC) V IOWM = 6 V RMS (848 V peak) Rated recurring peak voltage (repetitive) V IORM = 6 V RMS Thickness through insulation.75 mm Internal creepage distance > 4 mm Creepage current resistance according to VDE 33/ IEC 2 Comparative Tracking Index: CTI 75 VDE Standards These couplers perform safety functions according to the following equipment standards: DIN EN 6747-5-2(VDE884)/ DIN EN 6747-5-5 pending Optocoupler for electrical safety requirements IEC 695/EN 695 Office machines (applied for reinforced isolation for mains voltage 4 VRMS) VDE 84 Telecommunication apparatus and data processing IEC 665 Safety for mains-operated electronic and related household apparatus
Order Information Part TCET TCET TCET2 TCET3 TCET4 TCET5 TCET6 TCET7 TCET8 TCET9 TCETG TCETG TCET2G TCET3G TCET4G TCET5G TCET6G TCET7G TCET8G TCET9G Remarks CTR 5-6 %, DIP-4 CTR 4-8 %, DIP-4 CTR 63-25 %, DIP-4 CTR - 2 %, DIP-4 CTR 6-32 %, DIP-4 CTR 5-5 %, DIP-4 CTR - 3 %, DIP-4 CTR 8-6 %, DIP-4 CTR 3-26 %, DIP-4 CTR 2-4 %, DIP-4 CTR 5-6 %, DIP-4 CTR 4-8 %, DIP-4 CTR 63-25 %, DIP-4 CTR - 2 %, DIP-4 CTR 6-32 %, DIP-4 CTR 5-5 %, DIP-4 CTR - 3 %, DIP-4 CTR 8-6 %, DIP-4 CTR 3-26 %, DIP-4 CTR 2-4 %, DIP-4 G = Leadform.6 mm; G is not marked on the body Absolute Maximum Ratings T amb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Test condition Symbol Value Unit Reverse voltage V R 6 V Forward current I F 6 ma Forward surge current t p µs I FSM.5 A Power dissipation P diss mw Junction temperature T j 25 C Output Parameter Test condition Symbol Value Unit Collector emitter voltage V CEO 7 V Emitter collector voltage V ECO 7 V Collector current I C 5 ma Collector peak current t p /T =.5, t p ms I CM ma Power dissipation P diss 5 mw Junction temperature T j 25 C 2
Coupler Parameter Test condition Symbol Value Unit Isolation test voltage (RMS) t = min V ISO 5 V RMS Total power dissipation P tot 25 mw Operating ambient temperature T amb - 4 to + C range Storage temperature range T stg - 55 to + 25 C Soldering temperature 2 mm from case t s T sld 26 C Electrical Characteristics T amb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Forward voltage I F = 5 ma V F.25.6 V Junction capacitance V R = V, f = MHz C j 5 pf Output Collector emitter voltage I C = ma V CEO 7 V Emitter collector voltage I E = µa V ECO 7 V Collector-emitter cut-off current V CE = 2 V, I f =, E = I CEO na Coupler Collector emitter saturation I F = ma, I C = ma V CEsat.3 V voltage Cut-off frequency V CE = 5 V, I F = ma, R L = Ω f c khz Coupling capacitance f = MHz C k.3 pf 3
Current Transfer Ratio Parameter Test condition Part Symbol Min Typ. Max Unit I C /I F V CE = 5 V, I F = ma TCET CTR 3 3 % TCETG TCET2 CTR 22 45 % TCET2G TCET3 CTR 34 7 % TCET3G TCET4 TCET4G CTR 56 9 % V CE = 5 V, I F = 5 ma TCET CTR 5 6 % TCETG TCET5 CTR 5 5 % TCET5G TCET6 CTR 3 % TCET6G TCET7 CTR 8 6 % TCET7G TCET8 CTR 3 26 % TCET8G TCET9 CTR 2 4 % TCET9G V CE = 5 V, I F = ma TCET CTR 4 8 % TCETG TCET2 CTR 63 25 % TCET2G TCET3 CTR 2 % TCET3G TCET4 TCET4G CTR 6 32 % Maximum Safety Ratings (according to DIN EN 6747-5-2(VDE884)/ DIN EN 6747-5-5 pending) see figure This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. Input Forward current I F 3 ma Output Power dissipation P diss 265 mw Coupler Rated impulse voltage V IOTM 8 kv Safety temperature T si 5 C 4
Insulation Rated Parameters Partial discharge test voltage - %, t test = s V pd.6 kv Routine test Partial discharge test voltage - Lot test (sample test) t Tr = 6 s, t test = s, (see figure 2) V IOTM 8 kv V pd.3 kv Insulation resistance V IO = 5 V R IO 2 Ω V IO = 5 V, T amb = C R IO Ω V IO = 5 V, T amb = 5 C R IO 9 Ω (construction test only) P tot Total Power Dissipation ( mw ) 94 982 3 25 Phototransistor Psi ( mw ) 2 5 5 IR-Diode Isi ( ma ) 25 5 75 25 T si Safety Temperature ( C ) 5 V IOTM 393 V Pd V IOWM V IORM t t, t 2 = to s t 3, t 4 = s t test = s t stres = 2 s t Tr = 6 s t 3 t test t 4 t 2 t stres t Figure. Derating diagram Figure 2. Test pulse diagram for sample test according to DIN EN 6747-5-2(VDE884)/ DIN EN 6747-; IEC6747 5
Switching Characteristics Delay time V S = 5 V, I C = 2 ma, R L = Ω t d 3. µs Rise time V S = 5 V, I C = 2 ma, R L = Ω t r 3. µs Turn-on time V S = 5 V, I C = 2 ma, R L = Ω t on 6. µs Storage time V S = 5 V, I C = 2 ma, R L = Ω t s.3 µs Fall time V S = 5 V, I C = 2 ma, R L = Ω t f 4.7 µs Turn-off time V S = 5 V, I C = 2 ma, R L = Ω t off 5. µs Turn-on time V S = 5 V, I F = ma, R L = kω t on 9. µs (see figure 4) Turn-off time V S = 5 V, I F = ma, R L = kω (see figure 4) t off. µs I F 96 698 95 84 I F R G = 5 t p T =. t p = 5 s I F 5 + 5 V I C = 2 ma; adjusted through input amplitude Channel I Channel II Oscilloscope R L = M C L = 2 pf I C % 9% % t p t d t r t on (= t d +t r ) t p t r t d t on pulse duration delay time rise time turn-on time t s t f t off t s t f t off (= t s +t f ) t t storage time fall time turn-off time Figure 3. Test circuit, non-saturated operation Figure 5. Switching Times I F I F =ma +5V I C R G =5Ω t p T =. t p =5µ s 5 Ω kω Channel I Channel II Oscilloscope R L MΩ C L 2 pf 95 843 Figure 4. Test circuit, saturated operation 6
Typical Characteristics (Tamb = 25 C unless otherwise specified) P tot Total Power Dissipation ( mw) 3 Coupled device 25 2 Phototransistor 5 IR-diode 5 4 8 2 96 7 T amb Ambient Temperature( C ) Figure 6. Total Power Dissipation vs. Ambient Temperature I CEO - Collector Dark Current, with open Base ( na ) 95 26 V CE =2V I F = 25 5 75 T amb - Ambient Temperature ( C ) Figure 9. Collector Dark Current vs. Ambient Temperature I F - Forward Current ( ma ) I Collector Current ( ma ) C. V CE =5V..2.4.6.8..2.4.6.8 2. 96 862 V F - Forward Voltage (V) 95 27.. I F Forward Current ( ma ) Figure 7. Forward Current vs. Forward Voltage Figure. Collector Current vs. Forward Current CTR rel Relative Current Transfer Ratio 95 25 2..5..5 25 25 5 V CE =5V I F =5mA T amb Ambient Temperature ( C ) Figure 8. Relative Current Transfer Ratio vs. Ambient Temperature 75 I Collector Current ( ma) C 95 985 I F =5mA.. 2mA ma 5mA 2mA ma V CE Collector Emitter Voltage (V) Figure. Collector Current vs. Collector Emitter Voltage 7
V CEsat Collector Emitter Saturation Voltage (V)..8.6.4.2 CTR=5% % 2% t on / t off Turn on / Turn off Time ( µ s ) 5 4 3 2 Saturated Operation V S =5V R L =k Ω 5 5 t off t on 2 95 28 I C Collector Current ( ma ) 95 3 I F Forward Current ( ma ) Figure 2. Collector Emitter Saturation Voltage vs. Collector Current Figure 5. Turn on / off Time vs. Forward Current CTR Current Transfer Ratio ( % ) V CE =5V 95 29. I F Forward Current ( ma ) Figure 3. Current Transfer Ratio vs. Forward Current t on / t off Turn on / Turn off Time ( µ s ) 95 3 8 6 4 2 t on t off Non Saturated Operation V S =5V R L = Ω 2 4 6 I C Collector Current ( ma ) Figure 4. Turn on / off Time vs. Collector Current 8
Package Dimensions in mm 4789 Package Dimensions in mm 4792 9
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