FC65P Single P-Channel, Logic Level, PowerTrench TM MOSFET General escription This P-Channel Logic Level MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and C/C conversion. Features - A, - V. =.5 Ω @ V GS = - V =.75 Ω @ V GS = -.5 V. Low gate charge (nc typical). High performance trench technology for extremely low. SuperSOT TM -6 package: small footprint (7% smaller than standard SO-); low profile (mm thick). SOT- SuperSOT TM -6 SuperSOT TM - SO- SOT- SOIC-6 S.65 6 5 TM SuperSOT -6 pin G Absolute Maximum Ratings T A = 5 C unless otherwise note Symbol Parameter Ratings Units V SS rain-source Voltage - V V GSS Gate-Source Voltage - Continuous ± V I rain Current - Continuous (Note a) - A - Pulsed - P Maximum Power issipation (Note a).6 W (Note b),t STG Operating and Storage Temperature Range -55 to 5 C THERMAL CHARACTERISTICS R θja Thermal Resistance, Junction-to-Ambient (Note a) 7 C/W R θjc Thermal Resistance, Junction-to-Case (Note ) C/W 999 Semiconductor Components, Industries, LLC. October-7, Rev. Publication Order Number: FC65P/
ELECTRICAL CHARACTERISTICS (T A = 5 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BV SS rain-source Breakdown Voltage V GS = V, I = -5 µa - V BV SS / Breakdown Voltage Temp. Coefficient I = -5 µa, Referenced to 5 o C - mv/ o C I SS Zero Gate Voltage rain Current V S = - V, V GS = V - µa = 55 o C - µa I GSSF Gate - Body Leakage, Forward V GS = V, V S = V na I GSSR Gate - Body Leakage, Reverse V GS = - V, V S = V - na ON CHARACTERISTICS (Note ) V GS(th) Gate Threshold Voltage V S = V GS, I = -5 µa - -.7 - V V GS(th) / Gate Threshold VoltageTemp.Coefficient I = -5 µa, Referenced to 5 o C. mv/ o C Static rain-source On-Resistance V GS = - V, I = -. A..5 Ω = 5 o C.5. V GS = -.5 V, I = -. A.6.75 I (on) On-State rain Current V GS = - V, V S = -5 V - A g FS Forward Transconductance V S = -5V, I = - A 9 S YNAMIC CHARACTERISTICS C iss Input Capacitance V S = -5 V, V GS = V, 75 pf C oss Output Capacitance f =. MHz pf C rss Reverse Transfer Capacitance pf SWITCHING CHARACTERISTICS (Note ) t (on) Turn - On elay Time V = -5 V, I = - A, ns t r Turn - On Rise Time V GS = - V, R GEN = 6 Ω 5 ns t (off) Turn - Off elay Time ns t f Turn - Off Fall Time 6 7 ns Q g Total Gate Charge V S = -5 V, I = -. A, nc Q gs Gate-Source Charge V GS = -5 V. nc Q gd Gate-rain Charge nc RAIN-SOURCE IOE CHARACTERISTICS I S Continuous Source iode Current -. A V S rain-source iode Forward Voltage V GS = V, I S = -. A (Note ) -.76 -. V Notes:. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. a. 7 o C/W when mounted on a in pad of oz Cu on FR- board. b. 56 o C/W when mounted on a minimum pad of oz Cu on FR- board.. Pulse Test: Pulse Width < µs, uty Cycle <.%.
S Typical Electrical Characteristics - I, RAIN-SOURCE CURRENT (A) 6 V GS= -V -6.V -.5V -.V -.5V -.V R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE..6.. V GS = -. V -.5V -5.V -6.V -.V -.V -V S, RAIN-SOURCE VOLTAGE (V) 6 - I, RAIN CURRENT (A) Figure. On-Region Characteristics. Figure. On-Resistance Variation with rain Current and Gate Voltage., NORMALIZE RAIN-SOURCE ON-RESISTANCE.6.. I = -A V GS= -V.6-5 -5 5 5 75 5 5, JUNCTION TEMPERATURE ( C), ON-RESISTANCE (OHM).6... T = 5 C J T = 5 C J I = -A 6 -V GS, GATE TO SOURCE VOLTAGE (V) Figure. On-Resistance Variation with Temperature. Figure. On-Resistance Variation with Gate-to-Source Voltage. - I, RAIN CURRENT (A) 6 V = -5V S T = -55 C J 5 C 5 C -I, REVERSE RAIN CURRENT (A)... V GS= V T = 5 C J 5 C -55 C 5 6 -V GS, GATE TO SOURCE VOLTAGE (V)....6.. -V S, BOY IOE FORWAR VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body iode Forward Voltage Variation with Source Current and Temperature.
Typical Electrical Characteristics (continued) -V GS, GATE-SOURCE VOLTAGE (V) 6 I = -A V = -5V S -5V -V CAPACITANCE (pf) f = MHz V GS = V C iss C oss C rss 6 9 5 Q g, GATE CHARGE (nc).. 7 5 -V S, RAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure. Capacitance Characteristics. -I, RAIN CURRENT (A)... RS(ON) LIMIT V GS = -V SINGLE PULSE R θja = 56 C/W T A = 5 C....5 5 5 s C ms ms ms -V S, RAIN-SOURCE VOLTAGE (V) us POWER (W) 5.. SINGLE PULSE TIME (SEC) SINGLE PULSE R θja=56 C/W T A = 5 C Figure 9. Maximum Safe Operating Area. Figure. Single Pulse Maximum Power issipation. r(t), NORMALIZE EFFECTIVE TRANSIENT THERMAL RESISTANCE.5...5...5 =.5...5.. Single Pulse..... t, TIME (sec) P(pk) R θja (t) = r(t) * R θja R θja = 56 C/W t t - T A = P * R θja (t) uty Cycle, = t / t Figure. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note b. Transient thermal response will change depending on the circuit board design.
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