Advance Technical Information High Voltage Power MOSFETs S I D25 R DS(on) = 45V = ma 75Ω N-Channel Enhancement Mode TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings S = 25 C to 5 C 45 V V DGR = 25 C to 5 C, R GS = MΩ 45 V S Continuous ± V M Transient ±3 V I D25 = 25 C ma I DM = 25 C, Pulse Width Limited by M ma P D = 25 C 3 W - 55... +5 C M 5 C T stg - 55... +5 C T L.6mm (.62 in.) from Case for s C T SOLD Plastic Body for seconds 2 C F C Mounting Force (TO-263)..65 / 22..4.6 N/lb Weight TO-263 2.5 g TO-268 4. g TO-268 (IXTT) Features G S D (Tab) D (Tab) G = Gate D = Drain S = Source Tab = Drain High Blocking Voltage High Voltage Packages Advantages ( (th) =, I D = 25μA 4. 6.5 V I GSS = ±V, = V ± na I DSS = 3.6kV, = V 5 μa = 4.5kV μa = 3.6kV = C 25 μa Easy to Mount Space Savings High Power Density Applications High Voltage Power Supplies Capacitor Discharge Applications Pulse Circuits Laser and X-Ray Generation Systems R DS(on) = V, I D = ma, Note 75 Ω DS498(/2)
( g fs = V, I D = 3mA, Note ms C iss 256 pf C oss = V, = 25V, f = MHz 9 pf C rss 5.5 pf R Gi Gate Input Resistance 76 Ω t d(on) Resistive Switching Times 7 ns t r 48 ns = V, = 5V, I D =.5 I D25 t d(off) 28 ns R t G = Ω (External) f 43 ns Q g(on).4 nc Q gs = V, = kv, I D =.5 I D25 3.4 nc Q gd 5. nc R thjc. C/W TO-263 (VHV) Outline PIN: - Gate 2 - Source 3 - Drain Source-Drain Diode ( I S = V ma I SM Repetitive, Pulse Width Limited by M ma V SD I F = I S, = V, Note.5 V TO-268 (VHV) Outline t rr I F = ma, -di/dt = 5A/μs, V R = V.6 μs Note:. Pulse test, t μs, duty cycle, d 2%. PIN: - Gate 2 - Source 3 - Drain ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,93,844 5,49,96 5,237,48 6,62,665 6,4,65 B 6,683,344 6,727,585 7,5,734 B2 7,57,338B2 by one or moreof the following U.S. patents: 4,8,72 5,7,58 5,63,37 5,38,25 6,259,23 B 6,534,343 6,7,5 B2 6,759,692 7,63,975 B2 4,88,6 5,34,796 5,87,7 5,486,75 6,36,728 B 6,583,55 6,7,463 6,77,478 B2 7,7,537
Fig.. Output Characteristics @ = 25ºC = V 9V 35 Fig. 2. Extended Output Characteristics @ = 25ºC = V 9V 25 5 5 - Volts 5 5 25 35 - Volts Fig. 3. Output Characteristics @ = 25ºC = V RDS(on) - Normalized 2.6 2.2.8.4. Fig. 4. R DS(on) Normalized to I D = ma Value vs. Junction Temperature = V I D = ma I D = ma 5V 5 5 25 35 - Volts.6.2-5 -25 25 5 75 25 5 - Degrees Centigrade 2.4 Fig. 5. R DS(on) Normalized to I D = ma Value vs. Drain Current 2 Fig. 6. Maximum Drain Current vs. Case Temperature 2.2 = V = 25ºC RDS(on) - Normalized 2..8.6.4.2. = 25ºC.8 5 5 25 35 I D - MilliAmperes -5-25 25 5 75 25 5 - Degrees Centigrade
Fig. 7. Input Admittance Fig. 8. Transconductance 25 5 = - ºC 5 = 25ºC 25ºC - ºC g f s - MilliSiemens 25ºC 25ºC 5 4.5 5. 5.5 6. 6.5 7. 7.5 - Volts 5 5 25 I D - MilliAmperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig.. Gate Charge 5 9 8 = V I D = ma I G = ma IS - MilliAmperes = 25ºC VGS - Volts 7 6 5 4 3 = 25ºC 2..2.3.4.5.6.7.8.9..2 V SD - Volts 2 3 4 5 6 7 8 9 Q G - NanoCoulombs, f = MHz Fig.. Capacitance Fig. 2. Maximum Transient Thermal Impedance Capacitance - PicoFarads C iss C oss Z(th)JC - ºC / W.. C rss 5 5 25 3 35 - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions...... Pulse Width - Seconds
, Fig. 3. Forward-Bias Safe Operating Area @ = 25ºC, Fig. 4. Forward-Bias Safe Operating Area @ = 75ºC R DS(on) Limit ms R DS(on) Limit ms ms = 5ºC = 25ºC Single Pulse,, - Volts DC ms = 5ºC ms = 75ºC Single Pulse DC ms,, - Volts IXYS REF: T_2N45(H5)-3-2-A