Power MOSFET TO27C S G D NChannel MOSFET PRODUCT SUMMRY (V) at T J max. 56 R DS(on) () = V.27 Q g max. (nc) 76 Q gs (nc) 2 Q gd (nc) 3 Configuration Single G D S FETURES Low figureofmerit R on x Q g % avalanche tested High peak current capability dv/dt ruggedness vailable Improved T rr /Q rr Improved gate charge High power dissipations capability Material categorization: for definitions of compliance please see /doc?9992 ORDERING INFORMTION Package Lead (Pb)free Lead (Pb)free and halogenfree TO27C E3 GE3 BSOLUTE MXIMUM RTINGS (T C = 25 C, unless otherwise noted) PRMETER SYMBOL LIMIT UNIT Drainsource voltage 5 V Gatesource voltage ± 3 Continuous drain current (T J = 5 C) a at V T C = 25 C I D T C = C Pulsed drain current b I DM 8 Linear derating factor.8 W/ C Single pulse avalanche energy c E S 36 mj Maximum power dissipation P D 25 W Reverse diode dv/dt d dv/dt 5 V/ns Operating junction and storage temperature range T J, T stg 55 to 5 Soldering recommendations (peak temperature) d For s 3 C Notes a. Limited by maximum junction temperature b. Repetitive rating; pulse width limited by maximum junction temperature c. V DD = 5 V, starting T J = 25 C, L = 2.5 mh, R g = 25, I S = 7 d. I SD 8, di/dt 38 /μs, V DD, T J 5 C e..6 mm from case THERML RESISTNCE RTINGS PRMETER SYMBOL TYP. MX. UNIT Maximum junctiontoambient R thj C/W Maximum junctiontocase (drain) R thjc.5 S7726Rev. D, Nov7 Document Number: 9382 THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?9
SPECIFICTIONS (T J = 25 C, unless otherwise noted) PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNIT Static Drainsource breakdown voltage = V, I D = 25 μ 5 V temperature coefficient /T J Reference to 25 C, I D = m.7 V/ C Gatesource threshold voltage (N) (th) =, I D = 25 μ 3. 5. V Gatesource leakage I GSS = ± 3 V ± n = 5 V, = V 25 Zero gate voltage drain current I DSS = V, = V, T J = 25 C 25 μ Drainsource onstate resistance R DS(on) = V I D =.225.27 Forward transconductance g fs = 5 V, I D = 6. S Dynamic Input capacitance C iss VGS = V, 25 292 Output capacitance C oss = 25 V, 3 36 pf Reverse transfer capacitance C rss f = MHz 26 32 Total gate charge Q g 65 76 Gatesource charge Q gs = V I D = 8, = V 2 nc Gatedrain charge Q gd 29 Turnon delay time t d(on) 8 Rise time t r 27 V DD = 25 V, I D = 8, R g = 9. Turnoff delay time t d(off) 32 ns Fall time t f Gate input resistance R g f = MHz, open drain. DrainSource Body Diode Characteristics MOSFET symbol D Continuous sourcedrain diode current I S showing the integral reverse G Pulsed diode forward current I SM p n junction diode S 8 Diode forward voltage V SD T J = 25 C, I S = 8, = V.5 V Reverse recovery time t rr 53 ns T J = 25 C, I F = I S, Reverse recovery charge Q rr di/dt = /μs, V 6.7 μc R = 35 V Reverse recovery current I RRM 3 S7726Rev. D, Nov7 2 Document Number: 9382 THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?9
TYPICL CHRCTERISTICS (25 C, unless otherwise noted) I D, Drain Current () 7 6 5 3 Top Bottom 5 V V 3 V 2 V V V 9. V 8. V 7. V 6. V 5. V T J = 25 C 7. V 6 2 8 2 3 R DS(on), DraintoSource On Resistance (Normalized) 3 I D = 7 2.5 2.5 = V.5 6 6 8 6, DraintoSource Voltage (V) T J, Junction Temperature ( C) Fig. Fig. Typical Output Characteristics, T C = 25 C Fig. Normalized OnResistance vs. Temperature I D, Drain Current () 3 Top Bottom 5 V V 3 V 2 V V V 9. V 8. V 7. V 6. V 5. V T J = 5 C 7. V Capacitance (pf) 5 3 2 = V, f = MHz C iss = C gs C gd, C ds Shorted C rss = C gd C oss = C ds C gd C iss C oss 6 2 8 2 3, DraintoSource Voltage (V) Fig. 2 Typical Output Characteristics, T C = 5 C C rss, DraintoSource Voltage (V) Fig. 5 Typical Capacitance vs. DraintoSource Voltage I D, Drain Current (). T J = 5 C T J = 25 C, GatetoSource Voltage (V) 6 2 8 I D = 7 = V = 25 V = V. 5 6 7 8 9, GatetoSource Voltage (V) Fig. 3 Typical Transfer Characteristics 3 6 9 Q G, Total Gate Charge (nc) Fig. 6 Typical Gate Charge vs. GatetoSource Voltage S7726Rev. D, Nov7 3 Document Number: 9382 THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?9
I SD, Reverse Drain Current () T J = 5 C T J = 25 C = V..2.5.8.. I D, Drain Current () Operation in this area limited by R DS(on) T C = 25 C T J = 5 C Single Pulse µs ms ms. V SD, SourcetoDrain Voltage (V), DraintoSource Voltage (V) Fig. 7 Typical SourceDrain Diode Forward Voltage Fig. 8 Maximum Safe Operating rea I D, Drain Current () 5 5 25 5 75 25 5 T C, Case Temperature ( C) Fig. 9 Maximum Drain Current vs. Case Temperature Normalized Effective Transient Thermal Impedance. Duty Cycle =.5.2..5.2 Single Pulse. 3 2. Pulse Time (s) Fig. Normalized Thermal Transient Impedance, JunctiontoCase (TO27) S7726Rev. D, Nov7 Document Number: 9382 THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?9
R D D.U.T. V Q G R g V DD Q GS Q GD V Pulse width µs Duty factor. % Fig. Switching Time Test Circuit V G Charge Fig. 5 Basic Gate Charge Waveform 9 % Current regulator Same type as D.U.T. 5 kω % t d(on) t r t d(off) t f 2 V.2 µf.3 µf D.U.T. V DS Fig. 2 Switching Time Waveforms 3 m L I G I D Current sampling resistors Vary t p to obtain required I S Fig. 6 Gate Charge Test Circuit R g I S D.U.T V DD V t p. Ω Fig. 3 Unclamped Inductive Test Circuit t p V DD I S Fig. Unclamped Inductive Waveforms S7726Rev. D, Nov7 5 Document Number: 9382 THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?9
Peak Diode Recovery dv/dt Test Circuit D.U.T. Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer R g dv/dt controlled by R g Driver same type as D.U.T. I SD controlled by duty factor D D.U.T. device under test V DD Driver gate drive P.W. Period D = P.W. Period = V a D.U.T. l SD waveform Reverse recovery current Body diode forward current di/dt D.U.T. waveform Diode recovery dv/dt V DD Reapplied voltage Inductor current Body diode forward drop Ripple 5 % I SD Note a. = 5 V for logic level devices Fig. 7 For NChannel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?9382. S7726Rev. D, Nov7 6 Document Number: 9382 THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?9
TO27C (High Voltage) Package Information 3 B R/2 Q E E/2 S 2 7 ØP (Datum B) Ø k M D B M ØP D2 2 x R (2) D D 2 3 D Thermal pad 5 L C 2 x b2 3 x b. M C M b Lead ssignments. Gate 2. Drain 3. Source. Drain 2 x e L See view B C DDE (b, b2, b) () Section C C, D D, E E MILLIMETERS INCHES MILLIMETERS INCHES DIM. MIN. MX. MIN. MX. DIM. MIN. MX. MIN. MX..58 5.3.8.9 D2.5.3..5 2.2 2.59.87.2 E 5.29 5.87.62.625 2.7 2.9.6.98 E 3.72.5 b.99..39.55 e 5.6 BSC.25 BSC b.99.35.39.53 Ø k.25. b2.53 2.39.6.9 L. 6.25.559.6 b3.65 2.37.65.93 L 3.7.29.6.69 b 2.2 3.3.95.35 N 7.62 BSC.3 BSC b5 2.59 3.38.2.33 Ø P 3.5 3.66.38. c.38.86.5.3 Ø P 7.39.29 c.38.76.5.3 Q 5.3 5.69.9.22 D 9.7.82.776.8 R.52 5.9.78.26 D 3.8.55 S 5.5 BSC.27 BSC ECN: X33Rev. D, Jul3 DWG: 597 Notes. Dimensioning and tolerancing per SME Y.5M99. 2. Contour of slot optional. 3. Dimension D and E do not include mold flash. Mold flash shall not exceed.27 mm (.5") per side. These dimensions are measured at the outermost extremes of the plastic body.. Thermal pad contour optional with dimensions D and E. 5. Lead finish uncontrolled in L. 6. Ø P to have a maximum draft angle of.5 to the top of the part with a maximum hole diameter of 3.9 mm (.5"). 7. Outline conforms to JEDEC outline TO27 with exception of dimension c. 8. Xian and Mingxin actually photo. E View B C C Planting (c) E. M D B M View (b, b3, b5) Base metal c Revision: Jul3 Document Number: 936 THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?9
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