FMS7 N-Channel UltraFET Trench MOSFET 5V, A, mω Features Max r S(on) = mω at V GS = V, I =.8A Max r S(on) = mω at V GS = V, I =.7A Low Miller Charge Optimized efficiency at high frequencies RoHS Compliant Pin S S S G General escription February 7 UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for r S(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency C to C converters. Application C - C Conversion tm 5 G S 7 S Power 5 (Bottom view) 8 S MOSFET Maximum Ratings T A = 5 C unless otherwise noted Symbol Parameter Ratings Units V S rain to Source Voltage 5 V V GS Gate to Source Voltage ± V I -Continuous T A = 5 C (Note a).8 A rain Current -Continuous (Silicon limited) T C = 5 C -Pulsed Power issipation T P C = 5 C 78 Power issipation T A = 5 C (Note a).5 W T J, T STG Operating and Storage Junction Temperature Range -55 to +5 C Thermal Characteristics R θjc Thermal Resistance, Junction to Case. R θja Thermal Resistance, Junction to Ambient (Note a) 5 Package Marking and Ordering Information C/W evice Marking evice Package Reel Size Tape Width Quantity FMS7 FMS7 Power 5 mm units 7 Fairchild Semiconductor Corporation FMS7 Rev.C
Electrical Characteristics T J = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV SS rain to Source Breakdown Voltage I = 5µA, V GS = V 5 V BV SS Breakdown Voltage Temperature I T J Coefficient = 5µA, referenced to 5 C 5 mv/ C I SS Zero Gate Voltage rain Current V S = V, µa I GSS Gate to Source Leakage Current V GS = ±V, V GS = V ± na On Characteristics (Note ) V GS(th) Gate to Source Threshold Voltage V GS = V S, I = 5µA V V GS(th) T J r S(on) Gate to Source Threshold Voltage Temperature Coefficient rain to Source On Resistance I = 5µA, referenced to 5 C - mv/ C V GS = V, I =.8A 5 V GS = V, I =.7A V GS = V, I =.8A T J = 5 C 7 58 g FS Forward Transconductance V S = V, I =.8A S ynamic Characteristics C iss Input Capacitance 775 5 pf V S = V, V GS = V, C oss Output Capacitance 8 pf f = MHz C rss Reverse Transfer Capacitance 5 pf R g Gate Resistance f = MHz.9 Ω mω Switching Characteristics t d(on) Turn-On elay Time ns V = 5V, I =.8A t r Rise Time ns V GS = V, R GEN = Ω t d(off) Turn-Off elay Time 58 ns t f Fall Time ns Q g(tot) Total Gate Charge at V V GS = V to V V = 5V nc Q gs Gate to Source Gate Charge I =.8A 7 nc Q gd Gate to rain Miller Charge 9 nc rain-source iode Characteristics V S Source to rain iode Forward Voltage V GS = V, I S =.8A (Note ).75. V t rr Reverse Recovery Time 79 9 ns I F =.8A, di/dt = A/µs Q rr Reverse Recovery Charge nc Notes: : R θja is determined with the device mounted on a in pad oz copper pad on a.5 x.5 in. board of FR- material. R θjc is guaranteed by design while R θca is determined by the user's board design. a. 5 C/W when mounted on a in pad of oz copper b. 5 C/W when mounted on a minimum pad of oz copper : Pulse Test: Pulse Width < µs, uty cycle <.%. FMS7 Rev.C
Typical Characteristics T J = 5 C unless otherwise noted I, RAIN CURRENT (A) NORMALIZE RAIN TO SOURCE ON-RESISTANCE 5 5 5 PULSE URATION = 8µs UTY CYCLE =.5%MAX 5 V S, RAIN TO SOURCE VOLTAGE (V)....8.....8. Figure. I =.8A V GS = V V GS = V V GS = V V GS = 5V V GS =.5V NORMALIZE RAIN TO SOURCE ON-RESISTANCE.8 5 5 5 I, RAIN CURRENT(A) On Region Characteristics Figure. Normalized On-Resistance vs rain Current and Gate Voltage. -75-5 -5 5 5 75 5 5 T J, JUNCTION TEMPERATURE ( o C) Figure. Normalized On Resistance vs Junction Temperature rs(on), RAIN TO SOURCE ON-RESISTANCE (mω)...8.... Figure. V GS =.5V I = 7A PULSE URATION = 8µs UTY CYCLE =.5%MAX V GS = 5V V GS = V V GS = V PULSE URATION = 8µs UTY CYCLE =.5%MAX T J = 5 o C T J = 5 o C 8 8 V GS, GATE TO SOURCE VOLTAGE (V) On-Resistance vs Gate to Source Voltage I, RAIN CURRENT (A) 8 PULSE URATION = 8µs UTY CYCLE =.5%MAX T J = 5 o C T J = -55 o C T J = 5 o C 5 V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics IS, REVERSE RAIN CURRENT (A) V GS = V. T J = -55 o C T J = 5 o C T J = 5 o C. E-.....8.. V S, BOY IOE FORWAR VOLTAGE (V) Figure. Source to rain iode Forward Voltage vs Source Current FMS7 Rev.C
Typical Characteristics T J = 5 C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) IAS, AVALANCHE CURRENT(A) 8 8 Q g, GATE CHARGE(nC) Figure 7. V =75V V = 75V V = 5V C rss f = MHz V GS = V. V S, RAIN TO SOURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs rain to Source Voltage T J = 5 o C.. t AV, TIME IN AVALANCHE(ms) T J = 5 o C Figure 9. Unclamped Inductive Switching Capability.5 CAPACITANCE (pf) I, RAIN CURRENT (A) 5 9 R θjc =. o C/W V GS = V C iss V GS = V C oss 5 5 75 5 5 T C, CASE TEMPERATURE ( o C) Figure. Maximum Continuous rain Current vs Case Temperature I, RAIN CURRENT (A).. Figure. Forward Bias Safe Operating Area us ms ms ms OPERATION IN THIS SINGLE PULSE s AREA MAY BE T J = MAX RATE C LIMITE BY r S(on) T A = 5 o C E-. V S, RAIN-SOURCE VOLTAGE (V) P(PK), PEAK TRANSIENT POWER (W) V GS = V SINGLE PULSE FOR TEMPERATURES ABOVE 5 o C ERATE PEAK CURRENT AS FOLLOWS: 5 T A I = I 5 ---------------------- 5 T A = 5 o C. - - - t, PULSE WITH (s) Figure. Single Pulse Maximum Power issipation FMS7 Rev.C
Typical Characteristics T J = 5 C unless otherwise noted NORMALIZE THERMAL IMPEANCE, Z θja. E- UTY CYCLE-ESCENING ORER. =.5...5.. SINGLE PULSE E- - - - t, RECTANGULAR PULSE URATION (s) Figure. Transient Thermal Response Curve P M t t NOTES: UTY FACTOR: = t /t PEAK T J = P M x Z θja x R θja + T A FMS7 Rev.C 5
FMS7 Rev.C
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