2A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION 65CF/M/MJ/D/NF is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell TM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES 2A,650V, R DS(on)(typ.) =4.3 @V GS =10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. Package Marking Hazardous Substance Control Packing 65CF TO-220F-3L 65CF Halogen free Tube 65CM TO-251D-3L 65C Halogen free Tube 65CMJ TO-251J-3L 65C Halogen free Tube 65CD TO-252-2L 65CD Halogen free Tube 65CDTR TO-252-2L 65CD Halogen free Tape & Reel 65CNF TO-126F-3L 65CNF Pb free Tube http: //www.silan.com.cn Page 1 of 10
ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted) Characteristics Symbol 65CF 65CM/D Ratings 65CMJ 65CNF Drain-Source Voltage V DS 650 V Gate-Source Voltage V GS ±30 V Drain Current T C=25 C I D 2.0 T C=100 C 1.3 Drain Current Pulsed I DM 8.0 A Power Dissipation(T C=25 C) -Derate above 25 C P D Unit 25 35 38 16 W 0.20 0.28 0.30 0.13 W/ C Single Pulsed Avalanche Energy(Note 1) E AS 108 mj Operation Junction Temperature Range T J -55~+150 C Storage Temperature Range T stg -55~+150 C A THERMAL CHARACTERISTICS Characteristics Symbol 65CF 65CM/D Ratings 65CMJ 65CNF Thermal Resistance, Junction-to-Case R θjc 5.0 3.57 3.29 7.81 C/W Thermal Resistance, Junction-to-Ambient R θja 62.5 62.0 62.0 62.5 C/W Unit ELECTRICAL CHARACTERISTICS (Tc=25 C unless otherwise noted) Characteristics Symbol Test conditions Min. Typ. Max. Unit Drain -Source Breakdown Voltage BV DSS V GS=0V, I D=250µA 650 -- -- V Drain-Source Leakage Current I DSS V DS=650V, V GS=0V -- -- 1.0 µa Gate-Source Leakage Current I GSS V GS=±30V, V DS=0V -- -- ±100 na Gate Threshold Voltage V GS(th) V GS= V DS, I D=250µA 2.0 -- 4.0 V Static Drain- Source On State Resistance R DS(on) V GS=10V, I D=1.0A -- 4.3 5 Input Capacitance C iss -- 255 -- V DS=25V, V GS=0V, Output Capacitance C oss -- 34 -- f=1.0mhz Reverse Transfer Capacitance C rss -- 2.2 -- pf Turn-on Delay Time t d(on) V DD=325V, R G=25Ω, -- 8.4 -- Turn-on Rise Time t r I D=2.0A -- 20.4 -- Turn-off Delay Time t d(off) -- 15.1 -- ns Turn-off Fall Time t f (Note 2,3) -- 24 -- Total Gate Charge Q g V DS=520V, I D=2.0A, -- 8.2 -- Gate-Source Charge Q gs V GS=10V -- 2.72 -- nc Gate-Drain Charge Q gd (Note 2,3) -- 3.37 -- http: //www.silan.com.cn Page 2 of 10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Symbol Test conditions Min. Typ. Max. Unit Continuous Source Current I S Integral Reverse P-N Junction -- -- 2.0 Pulsed Source Current I SM Diode in the MOSFET -- -- 8.0 A Diode Forward Voltage V SD I S=2.0A,V GS=0V -- -- 1.4 V Reverse Recovery Time T rr I S=2.0A,V GS=0V, -- 372 -- ns Reverse Recovery Charge Q rr di F/dt=100A/µS -- 0.99 -- µc 1. L=30mH, I AS=2.5A, V DD=100V, R G=25, starting TB JB=25 C; 2. Pulse Test: Pulse width 300μs,Duty cycle 2%; 3. Essentially independent of operating temperature. TYPICAL CHARACTERISTICS http: //www.silan.com.cn Page 3 of 10
TYPICAL CHARACTERISTICS(continued) Capacitance (pf) 500 450 400 350 300 250 200 150 100 50 Figure 5. Capacitance Characteristics Ciss Coss Crss Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd 1. V GS=0V 2. f=1mhz Gate-Source Voltage VGS(V) 12 10 8 6 4 2 Figure 6. Gate Charge Characteristics V DS=520V V DS=325V V DS=130V Note: I D=2.0A 0 0.1 1 10 100 0 0 2 4 6 8 10 Drain-Source Voltage V DS (V) Total Gate Charge Qg(nC) Drain-Source Breakdown Voltage (Normalized) BVDSS 1.2 1.1 1.0 0.9 Figure 7. Breakdown Voltage Variation vs. Temperature 1. V GS=0V 2. I D=250µA 0.8-100 -50 0 50 100 150 200 Junction Temperature T J ( C) Drain-Source On-Resistance (Normalized) RDS(ON) 3.0 2.5 2.0 1.5 1.0 0.5 Figure 8. On-resistance vs. Temperature 1. V GS=10V 2. I D=1.0A 0.0-100 -50 0 50 100 150 200 Junction Temperature T J ( C) 10 1 Figure 9-1. Max. Safe Operating Area(65CF) 10 1 Figure 9-2. Max. Safe Operating Area(65CM/D) 0.1ms 0.1ms Drain Current - ID(A) 10 0 10-1 10-2 Operation in this area is limited by RDS(ON) 1.T C=25 C 2.T j=150 C 3.R DS(ON) [MAX]=5Ω 1ms 10ms 100ms 10 0 10 1 10 2 10 3 DC Drain Current - ID(A) 10 0 10-1 10-2 Operation in this area is limited by RDS(ON) 1.T C=25 C 2.T j=150 C 3.R DS(ON) [MAX]=5Ω 1ms 10ms 100ms 10 0 10 1 10 2 10 3 DC Drain-Source Voltage - V DS (V) Drain-Source Voltage - V DS (V) http: //www.silan.com.cn Page 4 of 10
TYPICAL CHARACTERISTICS(continued) http: //www.silan.com.cn Page 5 of 10
TYPICAL TEST CIRCUIT Gate Charge Test Circuit & Waveform 12V 200nF 50KΩ 300nF Same Type as DUT VDS VGS 10V Qg Qgs Qgd VGS DUT 3mA Charge Resistive Switching Test Circuit & Waveform VGS VDS RL VDD VDS 90% 10V RG DUT 10% VGS td(on) tr ton td(off) tf toff Unclamped Inductive Switching Test Circuit & Waveform VDS L BVDSS EAS = 1 2 LI AS 2 BVDSS BVDSS - VDD ID IAS 10V tp RG DUT VDD VDD ID(t) VDS(t) tp Time http: //www.silan.com.cn Page 6 of 10
PACKAGE OUTLINE TO-126F-3L UNIT: mm 3.20±0.10 3.80±0.10 8.00±0.20 φ3.05±0.10 15.00±0.50 1.90 11.00±0.20 1.27 0.76±0.10 4.60±0.20 2.30±0.20 0.50±0.10 2.00±0.10 TO-220F-3L UNIT: mm http: //www.silan.com.cn Page 7 of 10
PACKAGE OUTLINE(continued) TO-251D-3L UNIT: mm E SYMBOL MIN NOM MAX A b b2 b3 c2 D 2.20 0.66 0.72 5.10 0.46 6.00 2.30 --- --- 5.33 --- 6.10 2.40 0.86 0.90 5.46 0.60 6.20 E e H L1 L2 6.50 6.60 6.70 2.186 2.286 2.386 10.40 10.70 11.00 3.50 REF 0.508 BSC TO-251J-3L UNIT: mm http: //www.silan.com.cn Page 8 of 10
PACKAGE OUTLINE(continued) TO-252-2L UNIT: mm L4 Disclaimer : Silan reserves the right to make changes to the information herein for the improvement of the design and performance without prior notice! Customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. All semiconductor products malfunction or fail with some probability under special conditions. When using Silan products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of such Silan products could cause loss of body injury or damage to property. Silan will supply the best possible product for customers! http: //www.silan.com.cn Page 9 of 10
Part No.: 65CF/M/MJ/D/NF Document Type: Datasheet Copyright: Website: http: //www.silan.com.cn Rev.: 1.6 1. Delete the package outline of TO-220F-3L(2) Rev.: 1.5 1. Update the package outline of TO-251J-3L Rev.: 1.4 1. Modify the ordering information 2. Modify the package outline of TO-251D-3L Rev.: 1.3 1. Modify the package information of TO-220F-3L and TO-252-2L 2. Modify the ordering information 3. Modify the electrical characteristics, C iss, C oss, C rss, t d(on), t r, t d(off), t f, Q g, Q gs, Q gd 4. Modify the Source-Drain diode ratings and characteristics, T rr, Q rr 5. Modify the figure 5, figure 6 Rev.: 1.2 1. Add the package of TO-126F-3L Rev.: 1.1 1. Modify the thermal characteristics Rev.: 1.0 1. First release http: //www.silan.com.cn Page 10 of 10