STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5

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Transcription:

STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5 N-channel 650 V, 0.43 Ω typ., 9 A MDmesh V Power MOSFET in D 2 PAK, DPAK, TO-220FP, TO-220 and IPAK packages Datasheet production data Features TAB TAB Order codes STB11N65M5 STD11N65M5 STF11N65M5 STP11N65M5 STU11N65M5 Worldwide best R DS(on) * area Higher V DSS rating and high dv/dt capability Excellent switching performance 100% avalanche tested Applications V DSS @ T Jmax R DS(on) max I D 710 V < 0.48 Ω 9 A Figure 1. D 2 PAK TAB 2 1 3 TO-220 DPAK 1 2 3 TO-220FP Internal schematic diagram 2 3 1 IPAK 3 2 1 1 2 3 Switching applications Description These devices are N-channel MDmesh V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics well-known PowerMESH horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order codes Marking Package Packaging STB11N65M5 STD11N65M5 D 2 PAK DPAK Tape and reel STF11N65M5 11N65M5 TO-220FP STP11N65M5 STU11N65M5 TO-220 IPAK Tube December 2012 Doc ID 022864 Rev 2 1/25 This is information on a product in full production. www.st.com 25

Contents Contents 1 Electrical ratings............................................ 3 2 Electrical characteristics..................................... 4 2.1 Electrical characteristics (curves)............................... 6 3 Test circuits.............................................. 9 4 Package mechanical data.................................... 10 5 Packaging mechanical data.................................. 21 6 Revision history........................................... 24 2/25 Doc ID 022864 Rev 2

Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter D 2 PAK DPAK TO-220 IPAK TO-220FP Unit V GS Gate-source voltage ± 25 V I D Drain current (continuous) at T C = 25 C 9 9 (1) A I D Drain current (continuous) at T C = 100 C 5.6 5.6 (1) A (1) I DM Drain current (pulsed) 36 36 (1) A P TOT Total dissipation at T C = 25 C 85 25 W dv/dt (2) Peak diode recovery voltage slope 15 V/ns V ISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 C) 1. Limited by maximum junction temperature. 2. I SD 9 A, di/dt 400 A/µs; V DS peak < V (BR)DSS, V DD =400 V 2500 V T stg Storage temperature - 55 to 150 C T j Max. operating junction temperature 150 C Table 3. Thermal data Symbol Parameter Value D 2 PAK DPAK TO-220FP TO-220 IPAK Unit R thj-case R thj-pcb (1) R thj-amb Thermal resistance junction-case max Thermal resistance junction-pcb max Thermal resistance junctionambient max 1.47 5.0 1.47 C/W 30 50 C/W 62.5 100 C/W 1. When mounted on 1 inch² FR-4, 2 Oz copper board. Table 4. Avalanche characteristics Symbol Parameter Value Unit I AR E AS Avalanche current, repetetive or not repetetive (pulse width limited by T jmax ) Single pulse avalanche energy (starting t j =25 C, I d = I AR ; V dd =50) 2 A 130 mj Doc ID 022864 Rev 2 3/25

Electrical characteristics 2 Electrical characteristics (T C = 25 C unless otherwise specified) Table 5. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS I GSS Drain-source breakdown voltage Zero gate voltage drain current (V GS = 0) Gate-body leakage current (V DS = 0) I D = 1 ma, V GS = 0 650 V V DS = 650 V V DS = 650 V, T C =125 C 1 100 µa µa V GS = ± 25 V ± 100 na V GS(th) Gate threshold voltage V DS = V GS, I D = 250 µa 3 4 5 V R DS(on) Static drain-source on-resistance V GS = 10 V, I D = 4.5 A 0.43 0.48 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss C oss C rss (1) C o(tr) (2) C o(er) R G Q g Q gs Q gd Input capacitance Output capacitance Reverse transfer capacitance Equivalent capacitance time related Equivalent capacitance energy related Intrinsic gate resistance Total gate charge Gate-source charge Gate-drain charge V DS = 100 V, f = 1 MHz, V GS = 0 V DS = 0 to 520 V, V GS = 0-644 18 2.5 - pf pf pf - 55 - pf - 17 - pf f = 1 MHz open drain - 5 - Ω V DD = 520 V, I D = 4.5 A, V GS = 10 V (see Figure 20) - 17 4.6 8.5 - nc nc nc 1. Time related is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from 0 to 80% V DSS 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C oss when V DS increases from 0 to 80% V DSS 4/25 Doc ID 022864 Rev 2

Electrical characteristics Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(v) t r(v) t f(i) t c(off) Voltage delay time Voltage rise time Current fall time Crossing time V DD = 400 V, I D = 7.5 A, R G = 4.7 Ω, V GS = 10 V (see Figure 21 and Figure 24) - 23 10 13.5 13 - ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD I SDM (1) V SD (2) t rr Q rr I RRM t rr Q rr I RRM Source-drain current Source-drain current (pulsed) Forward on voltage I SD = 9 A, V GS = 0-1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current I SD = 9 A, di/dt = 100 A/µs V DD = 100 V (see Figure 21) I SD = 9 A, di/dt = 100 A/µs V DD = 100 V, T j = 150 C (see Figure 21) - - - 232 2 17.5 328 2.8 17 9 36 A A ns µc A ns µc A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 022864 Rev 2 5/25

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for DPAK and IPAK Figure 3. Thermal impedance DPAK and IPAK ID (A) AM15398v1 10 1 0.1 Operation in this area is Limited by max RDS(on) Tj=150 C Tc=25 C Single pulse 0.01 0.1 1 10 100 VDS(V) 10µs 100µs 1ms 10ms Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP ID (A) AM15399v1 10 1 0.1 Operation in this area is Limited by max RDS(on) Tj=150 C Tc=25 C Single pulse 0.01 0.1 1 10 100 VDS(V) 10µs 100µs 1ms 10ms Figure 6. Safe operating area for TO-220 and D 2 PAK Figure 7. Thermal impedance for TO-220 and D 2 PAK ID (A) AM15400v1 10 1 0.1 Operation in this area is Limited by max RDS(on) Tj=150 C Tc=25 C Single pulse 0.01 0.1 1 10 100 VDS(V) 10µs 100µs 1ms 10ms 6/25 Doc ID 022864 Rev 2

Electrical characteristics Figure 8. Output characteristics Figure 9. Transfer characteristics ID (A) 16 14 12 VGS=10V 8V 7V AM15401v1 ID (A) 16 14 12 VDS=25V AM15402v1 10 10 8 8 6 6 4 4 2 6V 0 0 5 10 15 20 25 VDS(V) 2 0 3 4 5 6 7 8 9 VGS(V) Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance VGS (V) 12 VDD=520V ID=4.5A AM15403v1 VDS (V) 500 RDS(on) (Ω) 0.55 VGS=10V AM15404v1 10 400 0.5 8 6 300 0.45 0.4 4 200 0.35 2 100 0.3 0 0 0 5 10 15 20 Qg(nC) 0.25 0 1 2 3 4 5 6 7 8 ID(A) Figure 12. Capacitance variations Figure 13. Output capacitance stored energy C (pf) AM15405v1 Eoss (µj) 3.5 AM15406v1 1000 Ciss 3 2.5 100 2 1.5 10 Coss 1 Crss 1 0.1 1 10 100 VDS(V) 0.5 0 0 200 400 600 VDS(V) Doc ID 022864 Rev 2 7/25

Electrical characteristics Figure 14. Normalized on-resistance vs temperature Figure 15. Normalized gate threshold voltage vs temperature RDS(on) (norm) VGS = 10 V 2.1 ID = 4.5 A AM05460v1 VGS(th) (norm) 1.10 VDS = VGS ID = 250 µa AM05459v1 1.9 1.7 1.00 1.5 1.3 0.90 1.1 0.9 0.80 0.7 0.5-50 -25 0 25 50 75 100 TJ( C) 0.70-50 -25 0 25 50 75 100 TJ( C) Figure 16. Drain-source diode forward characteristics Figure 17. Normalized B VDSS vs temperature AM05461v1 VSD (V) TJ=-50 C 1.2 1.0 0.8 TJ=25 C 0.6 TJ=150 C 0.4 0.2 0 0 10 20 30 40 50 ISD(A) AM10399v1 VDS (norm) 1.08 ID = 1mA 1.06 1.04 1.02 1.00 0.98 0.96 0.94 0.92-50 -25 0 25 50 75 100 TJ( C) Figure 18. Switching losses vs gate resistance (1) E(μJ) 100 VDD=400V VGS=10V ID=6A Eon AM15407v1 80 60 40 20 Eoff 0 0 5 10 15 20 25 30 35 40 45 RG(Ω) 1. Eon including reverse recovery of a SiC diode 8/25 Doc ID 022864 Rev 2

Test circuits 3 Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit Figure 21. Test circuit for inductive load switching and diode recovery times Figure 22. Unclamped inductive load test circuit Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform Id Concept waveform for Inductive Load Turn-off 90%Vds 90%Id Vgs Tdelay-off 90%Vgs on Vgs(I(t)) 10%Vds 10%Id Vds Trise Tfall Tcross -over AM05540v2 Doc ID 022864 Rev 2 9/25

Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/25 Doc ID 022864 Rev 2

Package mechanical data Table 9. Dim. D²PAK (TO-263) mechanical data mm Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 10.40 E1 8.50 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R 0.4 V2 0 8 Doc ID 022864 Rev 2 11/25

Package mechanical data Figure 25. D²PAK (TO-263) drawing 0079457_T Figure 26. D²PAK footprint (a) 16.90 12.20 5.08 1.60 9.75 3.50 Footprint a. All dimension are in millimeters 12/25 Doc ID 022864 Rev 2

Package mechanical data Table 10. Dim. DPAK (TO-252) mechanical data mm Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 5.10 E 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 0.80 L4 0.60 1 R 0.20 V2 0 8 Doc ID 022864 Rev 2 13/25

Package mechanical data Figure 27. DPAK (TO-252) drawing 0068772_I Figure 28. DPAK footprint (b) 6.7 1.8 3 1.6 6.7 2.3 2.3 1.6 AM08850v1 b. All dimensions are in millimeters 14/25 Doc ID 022864 Rev 2

Package mechanical data Table 11. Dim. TO-220FP mechanical data mm Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Doc ID 022864 Rev 2 15/25

Package mechanical data Figure 29. TO-220FP drawing 7012510_Rev_K_B 16/25 Doc ID 022864 Rev 2

Package mechanical data Table 12. Dim. TO-220 type A mechanical data mm Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 P 3.75 3.85 Q 2.65 2.95 Doc ID 022864 Rev 2 17/25

Package mechanical data Figure 30. TO-220 type A drawing 0015988_typeA_Rev_S 18/25 Doc ID 022864 Rev 2

Package mechanical data Table 13. IPAK (TO-251) mechanical data mm. DIM min. typ. max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 B5 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e 2.28 e1 4.40 4.60 H 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 1.00 V1 10 Doc ID 022864 Rev 2 19/25

Package mechanical data Figure 31. IPAK (TO-251) drawing 0068771_J 20/25 Doc ID 022864 Rev 2

Packaging mechanical data 5 Packaging mechanical data Table 14. DPAK (TO-252) tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A0 6.8 7 A 330 B0 10.4 10.6 B 1.5 B1 12.1 C 12.8 13.2 D 1.5 1.6 D 20.2 D1 1.5 G 16.4 18.4 E 1.65 1.85 N 50 F 7.4 7.6 T 22.4 K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 Doc ID 022864 Rev 2 21/25

Packaging mechanical data Table 15. D²PAK (TO-263) tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A0 10.5 10.7 A 330 B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 13.2 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 26.4 F 11.4 11.6 N 100 K0 4.8 5.0 T 30.4 P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 22/25 Doc ID 022864 Rev 2

Packaging mechanical data Figure 32. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T Top cover tape P0 D P2 E K0 B0 F W A0 P1 D1 User direction of feed R User direction of feed Bending radius AM08852v2 Figure 33. Reel REEL DIMENSIONS T 40mm min. Access hole At sl ot location B D C A N Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 Doc ID 022864 Rev 2 23/25

Revision history 6 Revision history Table 16. Document revision history Date Revision Changes 23-Feb-2012 1 First release. 03-Dec-2012 2 Minor text changes in cover page Added IPAK packages Added Section 2.1: Electrical characteristics (curves) Updated Section 5: Packaging mechanical data Modified: note 2 on Table 2 Updated: mechanical data for TO-220FP package 24/25 Doc ID 022864 Rev 2

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