Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE GRADE V DSS R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) 24V 0.8m 1.0m 429A 240A Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications. S (Pin 2, 3, 5, 6, 7) G (Pin 1) D 2 Pak 7 Pin G D S Gate Drain Source Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity D 2 Pak 7 Pin Tube 50 Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25 C, unless otherwise specified. Symbol Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, V GS @ V (Silicon Limited) 429 I D @ T C = C Continuous Drain Current, V GS @ V (Silicon Limited) 303 I D @ T C = 25 C Continuous Drain Current, V GS @ V (Package Limited) 240 A I DM Pulsed Drain Current 1640 P D @T C = 25 C Maximum Power Dissipation 300 W Linear Derating Factor 2.0 W/ C V GS Gate-to-Source Voltage ± 20 V E AS Single Pulse Avalanche Energy (Thermally Limited) 230 mj I AR Avalanche Current See Fig.14,15, 18a, 18b A E AR Repetitive Avalanche Energy mj dv/dt Peak Diode Recovery 1.6 V/ns T J Operating Junction and -55 to + 175 T STG Storage Temperature Range C Soldering Temperature, for seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 0.50 R JA Junction-to-Ambient 40 C/W HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-9-30
Static @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 24 V V GS = 0V, I D = 250µA V (BR)DSS / T J Breakdown Voltage Temp. Coefficient 0.023 V/ C Reference to 25 C, I D = 5mA R DS(on) Static Drain-to-Source On-Resistance 0.80 1.0 m V GS = V, I D = 160A V GS(th) Gate Threshold Voltage 2.0 4.0 V V DS = V GS, I D = 250µA gfs Forward Trans conductance 190 S V DS = 15V, I D = 160A R G Gate Resistance 3.0 I DSS Drain-to-Source Leakage Current 20 V DS =24V, V GS = 0V µa 250 V DS =19V,V GS = 0V,T J =125 C Gate-to-Source Forward Leakage 200 V GS = 20V I GSS na Gate-to-Source Reverse Leakage -200 V GS = -20V Dynamic Electrical Characteristics @ T J = 25 C (unless otherwise specified) Q g Total Gate Charge 180 252 I D = 75A Q gs Gate-to-Source Charge 47 V DS = 12V nc Q gd Gate-to-Drain Charge 58 V GS = V Q sync Total Gate Charge Sync. (Q g - Q gd ) 122 t d(on) Turn-On Delay Time 19 V DD = 16V t r Rise Time 240 I D = 160A ns t d(off) Turn-Off Delay Time 86 R G = 2.7 t f Fall Time 93 V GS = V C iss Input Capacitance 7700 V GS = 0V C oss Output Capacitance 3380 V DS = 19V C rss Reverse Transfer Capacitance 1930 pf ƒ = 1.0MHz, See Fig. 5 C oss eff.(er) Effective Output Capacitance (Energy Related) 4780 V GS = 0V, V DS = 0V to 19V C oss eff.(tr) Effective Output Capacitance (Time Related) 4970 V GS = 0V, V DS = 0V to 19V Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I S 429 (Body Diode) showing the A Pulsed Source Current integral reverse I SM 1640 (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.3 V T J = 25 C,I S = 160A,V GS = 0V t rr Reverse Recovery Time 71 7 T J = 25 C V DD = 20V ns 74 1 T J = 125 C I F = 160A, Q rr Reverse Recovery Charge 83 120 T J = 25 C di/dt = A/µs nc 92 140 T J = 125 C I RRM Reverse Recovery Current 2.0 A T J = 25 C t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D ) Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 240A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. Repetitive rating; pulse width limited by max. junction temperature. Limited by T Jmax, starting T J = 25 C, L = 0.018mH, R G = 25, I AS = 160A, V GS =V. Part not recommended for use above this value. I SD 160A, di/dt 600A/µs, V DD V (BR)DSS, T J 175 C. Pulse width 400µs; duty cycle 2%. C oss eff. (TR) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. C oss eff. (ER) is a fixed capacitance that gives the same energy as C oss while V DS is rising from 0 to 80% V DSS. When mounted on 1" square PCB (FR-4 or G- Material). For recommended footprint and soldering techniques refer to application note #AN-994 R is measured at T J approximately 90 C. 2 2015-9-30
C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) VGS TOP 15V V 8.0V 6.0V 5.5V 5.0V 4.8V BOTTOM 4.5V VGS TOP 15V V 8.0V 6.0V 5.5V 5.0V 4.8V BOTTOM 4.5V 4.5V 4.5V 60µs PULSE WIDTH Tj = 25 C 0.1 1 V DS, Drain-to-Source Voltage (V) 60µs PULSE WIDTH Tj = 175 C 0.1 1 V DS, Drain-to-Source Voltage (V) Fig. 1 Typical Output Characteristics Fig. 2 Typical Output Characteristics 1.8 1.6 I D = 160A V GS = V T J = 175 C 1.4 1 0.1 T J = 25 C V DS = 15V 60µs PULSE WIDTH 2 3 4 5 6 7 8 9 V GS, Gate-to-Source Voltage (V) 1.2 1.0 0.8 0.6-60 -40-20 0 20 40 60 80 120140160180 T J, Junction Temperature ( C) 00 Fig. 3 Typical Transfer Characteristics V GS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd Fig. 4 Normalized On-Resistance vs. Temperature 12.0 I D = 75A.0 V DS = 19V V DS = 12V 8.0 0 C iss C oss 6.0 C rss 4.0 2.0 1 V DS, Drain-to-Source Voltage (V) 0.0 0 50 150 200 Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 3 2015-9-30
Energy (µj) V (BR)DSS, I D, Drain Current (A) Drain-to-Source Breakdown Voltage (V) I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) 0 OPERATION IN THIS AREA LIMITED BY R DS (on) T J = 175 C 1msec µsec T J = 25 C V GS = 0V 1.0 0.0 0.5 1.0 1.5 2.0 2.5 V SD, Source-to-Drain Voltage (V) 1 Tc = 25 C Tj = 175 C Single Pulse msec DC 0 1 V DS, Drain-to-Source Voltage (V) 450 400 350 Fig. 7 Typical Source-to-Drain Diode Forward Voltage Limited By Package 32 31 30 Fig 8. Maximum Safe Operating Area Id = 5mA 300 250 200 150 50 29 28 27 26 25 0 25 50 75 125 150 175 T C, Case Temperature ( C) 24-60 -40-20 0 20 40 60 80 120140160180 T J, Temperature ( C ) Fig 9. Maximum Drain Current vs. Case Temperature 1.4 1.2 1.0 E AS, Single Pulse Avalanche Energy (mj) Fig. Drain-to-Source Breakdown Voltage 900 800 700 I D TOP 45A 80A BOTTOM 160A 0.8 0.6 0.4 600 500 400 300 0.2 0.0-5 0 5 15 20 25 V DS, Drain-to-Source Voltage (V) 200 0 25 50 75 125 150 175 Starting T J, Junction Temperature ( C) Fig 11. Typical COSS Stored Energy Fig 12. Maximum Avalanche Energy vs. Drain Current 4 2015-9-30
1 D = 0.50 Thermal Response ( Z thjc ) C/W 0.1 0.01 0.20 0. 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) J J 1 1 2 2 3 3 Ci= i Ri Ci= i Ri R 1 R 2 R 3 R 1 R 2 R 3 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t 1, Rectangular Pulse Duration (sec) R 4 R 4 C C 4 4 Ri ( C/W) I (sec) 0.02070 0.0000 0.08624 0.000070 0.24491 0.001406 0.15005 0.009080 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case Avalanche Current (A) 0.05 Duty Cycle = Single Pulse 0.01 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150 C and Tstart =25 C (Single Pulse) 0. Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25 C and Tstart = 150 C. 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Avalanche Current vs. Pulse width 5 2015-9-30
V GS(th), Gate threshold Voltage (V) E AR, Avalanche Energy (mj) 250 200 150 50 TOP Single Pulse BOTTOM 1.0% Duty Cycle I D = 160A 0 25 50 75 125 150 175 Starting T J, Junction Temperature ( C) Fig 15. Maximum Avalanche Energy vs. Temperature Notes on Repetitive Avalanche Curves, Figures 14, 15: (For further info, see AN-5 at www.infineon.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 18a, 18b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25 C in Figure 13, 14). tav = Average time in avalanche. D = Duty cycle in avalanche = tav f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) P D (ave) = 1/2 ( 1.3 BV I av ) = T/ Z thjc I av = 2 T/ [1.3 BV Z th ] E AS (AR) = P D (ave) t av 4.5 4.0 3.5 3.0 2.5 2.0 I D = 250µA I D = 1.0mA I D = 1.0A 1.5 1.0-75 -50-25 0 25 50 75 125 150 175 200 T J, Temperature ( C ) Fig 16. Threshold Voltage vs. Temperature 6 2015-9-30
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs 15V tp V (BR)DSS V DS L DRIVER R G D.U.T + I AS - V DD A 20V tp 0.01 Fig 18a. Unclamped Inductive Test Circuit I AS Fig 18b. Unclamped Inductive Waveforms Fig 19a. Switching Time Test Circuit Fig 19b. Switching Time Waveforms Vds Id Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 20a. Gate Charge Test Circuit Fig 20b. Gate Charge Waveform 7 2015-9-30
D 2 Pak - 7 Pin Package Outline (Dimensions are shown in millimeters (inches)) D 2 Pak - 7 Pin Part Marking Information Part Number IR Logo AUF1324S-7P YWWA XX XX Date Code Y= Year WW= Work Week Lot Code 8 2015-9-30
Qualification Information Qualification Level Moisture Sensitivity Level Machine Model ESD Human Body Model Charged Device Model RoHS Compliant Automotive (per AEC-Q1) Comments: This part number(s) passed Automotive qualification. Infineon s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D 2 -Pak 7 Pin MSL1 Class M4 AEC-Q1-002 Class H3A AEC-Q1-001 Class C3 AEC-Q1-005 Yes Highest passing voltage. Revision History Date Updated datasheet with corporate template 9/30/2015 Corrected ordering table on page 1. Updated typo on GFS on page 2. Comments Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 9 2015-9-30